Datasheet MC74HC589AFL1, MC74HC589AN, MC74HC589AF, MC74HC589AFEL, MC74HC589ADT Datasheet (MOTOROLA)

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Page 1
Semiconductor Components Industries, LLC, 2000
March, 2000 – Rev. 1
1 Publication Order Number:
MC74HC589A/D
MC74HC589A
8-Bit Serial or Parallel-Input/Serial-Output Shift Register with 3-State Output
High–Performance Silicon–Gate CMOS
The MC74HC589A device consists of an 8–bit storage latch which feeds parallel data to an 8–bit shift register. Data can also be loaded serially (see Function Table). The shift register output, QH, is a three–state output, allowing this device to be used in bus–oriented systems.
The HC589A directly interfaces with the SPI serial data port on CMOS MPUs and MCUs.
Output Drive Capability: 15 LSTTL Loads
Outputs Directly Interface to CMOS, NMOS, and TTL
Operating Voltage Range: 2 to 6 V
Low Input Current: 1 µA
High Noise Immunity Characteristic of CMOS Devices
In Compliance with the Requirements Defined by JEDEC Standard
No. 7A
Chip Complexity: 526 FETs or 131.5 Equivalent Gates
LOGIC DIAGRAM
SERIAL
DATA
INPUT
14
15 1 2 3 4 5 6 7
12
11 13 10
S
A
A B C D E
F G H
LATCH CLOCK
SHIFT CLOCK
SERIAL SHIFT/
PARALLEL LOAD
OUTPUT ENABLE
PARALLEL
DATA
INPUTS
DATA
LATCH
SHIFT
REGISTER
VCC = PIN 16 GND = PIN 8
9
Q
H
SERIAL
DATA
OUTPUT
SO–16
D SUFFIX
CASE 751B
http://onsemi.com
TSSOP–16 DT SUFFIX CASE 948F
1
16
PDIP–16 N SUFFIX CASE 648
1
16
1
16
MARKING
DIAGRAMS
1
16
MC74HC589AN
AWLYYWW
1
16
HC589A
AWLYWW
A = Assembly Location WL = Wafer Lot YY = Year WW = Work Week
HC
589A
ALYW
1
16
Device Package Shipping
ORDERING INFORMATION
MC74HC589AN PDIP–16 2000 / Box MC74HC589AD SOIC–16
48 / Rail MC74HC589ADR2 SOIC–16 2500 / Reel MC74HC589ADT TSSOP–16 96 / Rail MC74HC589ADTR2 TSSOP–16
2500 / Reel
PIN ASSIGNMENT
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
LATCH CLOCK
SERIAL SHIFT/ PARALLEL LOAD
S
A
A
V
CC
Q
H
OUTPUT ENABLE
SHIFT CLOCK
E
D
C
B
GND
H
G
F
Page 2
MC74HC589A
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2
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
V
CC
DC Supply Voltage (Referenced to GND)
– 0.5 to + 7.0
V
V
in
DC Input Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
V
out
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
I
in
DC Input Current, per Pin
± 20
mA
I
out
DC Output Current, per Pin
± 35
mA
I
CC
DC Supply Current, VCC and GND Pins
± 75
mA
ÎÎ
Î
P
D
ОООООООООООО
Î
Power Dissipation in Still Air, Plastic DIP†
SOIC Package†
TSSOP Package†
ÎÎÎ
Î
750 500 450
Î
Î
mW
T
stg
Storage Temperature
– 65 to + 150
_
C
ÎÎ
Î
T
L
ОООООООООООО
Î
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP, SOIC or TSSOP Package)
ÎÎÎ
Î
260
Î
Î
_
C
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: –10 mW/_C from 65_ to 125_C
SOIC Package: –7 mW/_C from 65_ to 125_C TSSOP Package: – 6.1 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
ÎÎ
Max
Unit
V
CC
DC Supply Voltage (Referenced to GND)
2.0
ÎÎ
6.0
V
Vin, V
out
DC Input Voltage, Output Voltage (Referenced to GND)
0
ÎÎ
V
CC
V
T
A
Operating Temperature, All Package Types
– 55
ÎÎ
+ 125
_
C
ÎÎ
Î
ÎÎ
Î
tr, t
f
ООООООООООООО
Î
ООООООООООООО
Î
Input Rise and Fall Time VCC = 2.0 V
VCC = 3.0 V
(Figure 1) VCC = 4.5 V
VCC = 6.0 V
Î
Î
Î
Î
0 0 0
ÎÎ
ÎÎ
ÎÎ
1000
TBD
500 400
Î
Î
Î
Î
ns
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Symbol
Parameter
Test Conditions
V
CC V
– 55 to
25_C
ÎÎÎ
v
85_Cv 125_C
Unit
ÎÎ
Î
ÎÎ
Î
V
IH
ООООООО
Î
ООООООО
Î
Minimum High–Level Input Voltage
ООООООО
Î
ООООООО
Î
V
out
= 0.1 V or VCC – 0.1 V
|I
out
| v 20 µA
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
1.5
2.1
3.15
4.2
ÎÎÎ
Î
Î
Î
Î
Î
Î
1.5
2.1
3.15
4.2
ÎÎ
Î
ÎÎ
Î
1.5
2.1
3.15
4.2
Î
Î
Î
Î
V
ÎÎ
Î
ÎÎ
Î
V
IL
ООООООО
Î
ООООООО
Î
Maximum Low–Level Input Voltage
ООООООО
Î
ООООООО
Î
V
out
= 0.1 V or VCC – 0.1 V
|I
out
| v 20 µA
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
0.5
0.9
1.35
1.8
ÎÎÎ
Î
Î
Î
Î
Î
Î
0.5
0.9
1.35
1.8
ÎÎ
Î
ÎÎ
Î
0.5
0.9
1.35
1.8
Î
Î
Î
Î
V
ÎÎ
Î
V
OH
ООООООО
Î
Minimum High–Level Output Voltage
ООООООО
Î
Vin = VIH or V
IL
|I
out
| v 20 µA
ÎÎ
Î
2.0
4.5
6.0
ÎÎ
Î
1.9
4.4
5.9
ÎÎÎ
Î
Î
Î
1.9
4.4
5.9
ÎÎ
Î
1.9
4.4
5.9
Î
Î
V
ÎÎÎОООООООÎООООООО
Î
Vin = VIH or VIL|I
out
| v 2.4 mA
|I
out
| v 6.0 mA
|I
out
| v 7.8 mA
ÎÎ
Î
3.0
4.5
6.0
ÎÎ
Î
2.48
3.98
5.48
ÎÎÎ
Î
Î
Î
2.34
3.84
5.34
ÎÎ
Î
2.20
3.70
5.20
Î
Î
ÎÎ
Î
V
OL
ООООООО
Î
Maximum Low–Level Output Voltage
ООООООО
Î
Vin = V
IH
|I
out
| v 20 µA
ÎÎ
Î
2.0
4.5
6.0
ÎÎ
Î
0.1
0.1
0.1
ÎÎÎ
Î
Î
Î
0.1
0.1
0.1
ÎÎ
Î
0.1
0.1
0.1
Î
Î
V
ÎÎ
Î
ÎÎ
Î
ООООООО
Î
ООООООО
Î
ООООООО
Î
ООООООО
Î
Vin = VIH or VIL|I
out
| v 2.4 mA
|I
out
| v 6.0 mA
|I
out
| v 7.8 mA
ÎÎ
Î
ÎÎ
Î
3.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
0.26
0.26
0.26
ÎÎÎ
Î
Î
Î
Î
Î
Î
0.33
0.33
0.33
ÎÎ
Î
ÎÎ
Î
0.40
0.40
0.40
Î
Î
Î
Î
I
in
Maximum Input Leakage Current
Vin = VCC or GND
6.0
± 0.1
ÎÎÎ
± 1.0
± 1.0
µA
This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high–impedance cir­cuit. For proper operation, Vin and V
out
should be constrained to the
range GND v (Vin or V
out
) v VCC.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open.
Page 3
MC74HC589A
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3
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Unit
Guaranteed Limit
V
CC
V
Test Conditions
Parameter
Symbol
Unit
v
125_C
ÎÎÎ
v
85_C
– 55 to
25_C
V
CC
V
Test Conditions
Parameter
Symbol
ÎÎ
Î
I
OZ
ООООООО
Î
Maximum Three–State Leakage Current
ООООООО
Î
Output in High–Impedance State Vin = VIL or V
IH
V
out
= VCC or GND
ÎÎ
Î
6.0
ÎÎ
Î
± 0.5
ÎÎÎ
Î
Î
Î
± 5.0
ÎÎ
Î
± 10
Î
Î
µA
ÎÎ
Î
I
CC
ООООООО
Î
Maximum Quiescent Supply Current (per Package)
ООООООО
Î
Vin = VCC or GND I
out
= 0 µA
ÎÎ
Î
6.0
ÎÎ
Î
4
ÎÎÎ
Î
Î
Î
40
ÎÎ
Î
160
Î
Î
µA
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book
(DL129/D).
AC ELECTRICAL CHARACTERISTICS (C
L
= 50 pF, Input tr = tf = 6 ns)
Guaranteed Limit
Symbol
Parameter
V
CC V
– 55 to
25_C
ÎÎÎ
v
85_Cv 125_C
Unit
ÎÎÎ
Î
ÎÎÎ
Î
f
max
ОООООООООООООО
Î
ОООООООООООООО
Î
Maximum Clock Frequency (50% Duty Cycle)
(Figures 2 and 8)
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
6.0
TBD
30 35
ÎÎÎ
Î
Î
Î
Î
Î
Î
4.8
TBD
24 28
ÎÎ
Î
ÎÎ
Î
4.0
TBD
20 24
Î
Î
Î
Î
MHz
ÎÎÎ
Î
ÎÎÎ
Î
t
PLH
,
t
PHL
ОООООООООООООО
Î
ОООООООООООООО
Î
Maximum Propagation Delay, Latch Clock to Q
H
(Figures 1 and 8)
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
175 100
40 30
ÎÎÎ
Î
Î
Î
Î
Î
Î
225 110
50 40
ÎÎ
Î
ÎÎ
Î
275 125
60 50
Î
Î
Î
Î
ns
ÎÎÎ
Î
t
PLH
,
t
PHL
ОООООООООООООО
Î
Maximum Propagation Delay, Shift Clock to Q
H
(Figures 2 and 8)
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
160
90 30 25
ÎÎÎ
Î
Î
Î
200 130
40 30
ÎÎ
Î
240 160
48 40
Î
Î
ns
ÎÎÎ
Î
ÎÎÎ
Î
t
PLH
,
t
PHL
ОООООООООООООО
Î
ОООООООООООООО
Î
Maximum Propagation Delay, Serial Shift/Parallel Load to Q
H
(Figures 4 and 8)
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
160
90 30 25
ÎÎÎ
Î
Î
Î
Î
Î
Î
200 130
40 30
ÎÎ
Î
ÎÎ
Î
240 160
48 40
Î
Î
Î
Î
ns
ÎÎÎ
Î
ÎÎÎ
Î
t
PLZ
,
t
PHZ
ОООООООООООООО
Î
ОООООООООООООО
Î
Maximum Propagation Delay, Output Enable to Q
H
(Figures 3 and 9)
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
150
80 27 23
ÎÎÎ
Î
Î
Î
Î
Î
Î
170 100
30 25
ÎÎ
Î
ÎÎ
Î
200 130
40 30
Î
Î
Î
Î
ns
ÎÎÎ
Î
ÎÎÎ
Î
t
PZL
,
t
PZH
ОООООООООООООО
Î
ОООООООООООООО
Î
Maximum Propagation Delay, Output Enable to Q
H
(Figures 3 and 9)
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
150
80 27 23
ÎÎÎ
Î
Î
Î
Î
Î
Î
170 100
30 25
ÎÎ
Î
ÎÎ
Î
200 130
40 30
Î
Î
Î
Î
ns
ÎÎÎ
Î
t
TLH
,
t
THL
ОООООООООООООО
Î
Maximum Output Transition Time, Any Output
(Figures 1 and 8)
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
60
TBD
12 10
ÎÎÎ
Î
Î
Î
75
TBD
15 13
ÎÎ
Î
90
TBD
18 15
Î
Î
ns
C
in
Maximum Input Capacitance
10
ÎÎÎ
10
10
pF
ÎÎÎ
Î
C
out
ОООООООООООООО
Î
Maximum Three–State Output Capacitance (Output in High–Impedance State)
ÎÎ
Î
ÎÎ
Î
15
ÎÎÎ
Î
Î
Î
15
ÎÎ
Î
15
Î
Î
pF
NOTES:
1. For propagation delays with loads other than 50 pF , see Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book (DL129/D).
2. Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
C
PD
Power Dissipation Capacitance (Per Package)*
50
pF
*Used to determine the no–load dynamic power consumption: PD = CPD V
CC
2
f + ICC VCC. For load considerations, see Chapter 2 of the
ON Semiconductor High–Speed CMOS Data Book (DL129/D).
Page 4
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4
TIMING REQUIREMENTS (Input t
r
= tf = 6 ns)
Guaranteed Limit
Symbol
Parameter
V
CC V
– 55 to
25_C
ÎÎÎ
v
85_Cv 125_C
Unit
ÎÎÎ
Î
ÎÎÎ
Î
t
su
ОООООООООООООО
Î
ОООООООООООООО
Î
Minimum Setup Time, A–H to Latch Clock
(Figure 5)
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
100
TBD
20 17
ÎÎÎ
Î
Î
Î
Î
Î
Î
125
TBD
25 21
ÎÎ
Î
ÎÎ
Î
150
TBD
30 26
Î
Î
Î
Î
ns
ÎÎÎ
Î
ÎÎÎ
Î
t
su
ОООООООООООООО
Î
ОООООООООООООО
Î
Minimum Setup Time, Serial Data Input SA to Shift Clock
(Figure 6)
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
100
TBD
20 17
ÎÎÎ
Î
Î
Î
Î
Î
Î
125
TBD
25 21
ÎÎ
Î
ÎÎ
Î
150
TBD
30 26
Î
Î
Î
Î
ns
ÎÎÎ
Î
t
su
ОООООООООООООО
Î
Minimum Setup Time, Serial Shift/Parallel Load to Shift Clock
(Figure 7)
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
100
TBD
20 17
ÎÎÎ
Î
Î
Î
125
TBD
25 21
ÎÎ
Î
150
TBD
30 26
Î
Î
ns
ÎÎÎ
Î
ÎÎÎ
Î
t
h
ОООООООООООООО
Î
ОООООООООООООО
Î
Minimum Hold Time, Latch Clock to A–H
(Figure 5)
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
25
TBD
5 5
ÎÎÎ
Î
Î
Î
Î
Î
Î
30
TBD
6 6
ÎÎ
Î
ÎÎ
Î
40
TBD
8 7
Î
Î
Î
Î
ns
ÎÎÎ
Î
ÎÎÎ
Î
t
h
ОООООООООООООО
Î
ОООООООООООООО
Î
Minimum Hold Time, Shift Clock to Serial Data Input S
A
(Figure 6)
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
5 5 5 5
ÎÎÎ
Î
Î
Î
Î
Î
Î
5 5 5 5
ÎÎ
Î
ÎÎ
Î
5 5 5 5
Î
Î
Î
Î
ns
ÎÎÎ
Î
t
w
ОООООООООООООО
Î
Minimum Pulse Width, Shift Clock
(Figure 2)
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
75
TBD
15 13
ÎÎÎ
Î
Î
Î
95
TBD
19 16
ÎÎ
Î
110
TBD
23 19
Î
Î
ns
ÎÎÎ
Î
ÎÎÎ
Î
t
w
ОООООООООООООО
Î
ОООООООООООООО
Î
Minimum Pulse Width, Latch Clock
(Figure 1)
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
80
TBD
16 14
ÎÎÎ
Î
Î
Î
Î
Î
Î
100
TBD
20 17
ÎÎ
Î
ÎÎ
Î
120
TBD
24 20
Î
Î
Î
Î
ns
ÎÎÎ
Î
ÎÎÎ
Î
t
w
ОООООООООООООО
Î
ОООООООООООООО
Î
Minimum Pulse Width, Serial Shift/Parallel Load
(Figure 4)
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
80
TBD
16 14
ÎÎÎ
Î
Î
Î
Î
Î
Î
100
TBD
20 17
ÎÎ
Î
ÎÎ
Î
120
TBD
24 20
Î
Î
Î
Î
ns
ÎÎÎ
Î
ÎÎÎ
Î
tr, t
f
ОООООООООООООО
Î
ОООООООООООООО
Î
Maximum Input Rise and Fall Times
(Figure 1)
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
1000
TBD
500 400
ÎÎÎ
Î
Î
Î
Î
Î
Î
1000 TBD
500 400
ÎÎ
Î
ÎÎ
Î
1000 TBD
500 400
Î
Î
Î
Î
ns
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book
(DL129/D).
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5
FUNCTION TABLE
Inputs Resulting Function
Operation
Output Enable
Serial Shift/
Parallel Load
Latch Clock
Shift
Clock
Serial
Input
S
A
Parallel
Inputs
A–H
Data
Latch
Contents
Shift
Register
Contents
Output
Q
H
Force output into high impedance state
H X X X X X X X Z
Load parallel data into data latch
L H L, H, X a–h a–h U U
Transfer latch contents to shift register
L L L, H, X X X U LRN SR
N
LR
H
Contents of input latch and shift register are unchanged
L H L, H, L, H, X X U U U
Load parallel data into data latch and shift register
L L X X a–h a–h a–h h
Shift serial data into shift register
L H X D X * SRA = D,
SRN SR
N+1
SRG SR
H
Load parallel data in data latch and shift serial data into shift register
L H D a–h a–h SRA = D,
SRN SR
N+1
SRG SR
H
LR = latch register contents U = remains unchanged SR = shift register contents X = don’t care a–h = data at parallel data inputs A–H Z = high impedance D = data (L, H) at serial data input S
A
* = depends on Latch Clock input
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6
SWITCHING W AVEFORMS
Figure 1. (Serial Shift/Parallel Load = L) Figure 2. (Serial Shift/Parallel Load = H)
LATCH CLOCK
Q
H
t
r
t
f
V
CC
GND
90%
50%
10%
t
PLH
t
PHL
t
TLH
t
THL
t
w
SHIFT CLOCK
Q
H
V
CC
GND
50%
50%
t
PLH
t
PHL
1/f
max
90% 50% 10%
t
w
Figure 3.
Q
H
Q
H
50%
50%
90%
10%
t
PZL
t
PLZ
t
PZHtPHZ
V
CC
GND HIGH
IMPEDANCE V
OL
V
OH
HIGH IMPEDANCE
OUTPUT
ENABLE
50%
SERIAL SHIFT/
PARALLEL LOAD
Q
H
50%
t
PLH
50%
V
CC
GND
t
PHL
50%
t
w
Figure 4.
A–H
50%
50%
LATCH CLOCK
V
CC
GND
*Includes all probe and jig capacitance
CL*
TEST POINT
DEVICE UNDER
TEST
OUTPUT
DATA VALID
t
su
t
h
S
A
50%
50%
SHIFT CLOCK
V
CC
GND
DATA VALID
t
su
t
h
SERIAL SHIFT/
PARALLEL LOAD
50%
50%
SHIFT CLOCK
V
CC
GND
t
su
Figure 5. Figure 6.
Figure 7. Figure 8. Test Circuit
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7
TEST CIRCUIT
Figure 9.
*Includes all probe and jig capacitance
CL*
TEST POINT
DEVICE
UNDER
TEST
OUTPUT
CONNECT TO VCC WHEN TESTING t
PLZ
AND t
PZL
. CONNECT TO GND WHEN TESTING t
PHZ
AND t
PZH
.
1 k
PIN DESCRIPTIONS
DATA INPUTS A, B, C, D, E, F, G, H (Pins 15, 1, 2, 3, 4, 5, 6, 7)
Parallel data inputs. Data on these inputs are stored in the
data latch on the rising edge of the Latch Clock input.
SA (Pin 14)
Serial data input. Data on this input is shifted into the shift register on the rising edge of the Shift Clock input if Serial Shift/Parallel Load is high. Data on this input is ignored when Serial Shift/Parallel Load
is low.
CONTROL INPUTS Serial Shift/Parallel Load
(Pin 13)
Shift register mode control. When a high level is applied to this pin, the shift register is allowed to serially shift data. When a low level is applied to this pin, the shift register accepts parallel data from the data latch.
Shift Clock (Pin 11)
Serial shift clock. A low–to–high transition on this input shifts data on the serial data input into the shift register and
data in stage H is shifted out QH, being replaced by the data previously stored in stage G.
Latch Clock (Pin 12)
Data latch clock. A low–to–high transition on this input
loads the parallel data on inputs A–H into the data latch.
Output Enable (Pin 10)
Active–low output enable A high level applied to this pin forces the QH output into the high impedance state. A low level enables the output. This control does not affect the state of the input latch or the shift register.
OUTPUT QH (Pin 9)
Serial data output. This pin is the output from the last stage of the shift register. This is a 3–state output.
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TIMING DIAGRAM
SHIFT CLOCK
SERIAL DATA
INPUT, S
A
OUTPUT ENABLE
SERIAL SHIFT/
PARALLEL LOAD
LATCH CLOCK
A
B
C
D
E
F
G
H
Q
H
PARALLEL
DATA
INPUTS
SERIAL SHIFT SERIAL SHIFT SERIAL SHIFT
SERIAL
SHIFT
RESET LATCH
AND SHIFT REGISTER
LOAD LATCH PARALLEL LOAD
SHIFT REGISTER
LOAD LATCH PARALLEL LOAD
SHIFT REGISTER
PARALLEL LOAD, LATCH
AND SHIFT REGISTER
HIGH IMPEDANCE
H LHH HLLHL H LLL
H
L
HH
L
L
L
L
L
L
L
L
H
L
H
L
H
H
L
H
L
L
L
L
L
L
L
H
L
L
L
L
H
H
L
H
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9
PARALLEL
DATA
INPUTS
10 14
11
13
12
15
1
2
3
4
5
6
7
OUTPUT ENABLE
S
A
SHIFT CLOCK
SERIAL SHIFT/
PARALLEL LOAD
LATCH CLOCK
A
B
C
D
E
F
G
H
STAGE A
STAGE B
STAGE C*
STAGE D*
STAGE E*
STAGE F*
STAGE G*
STAGE H
V
CC
9
Q
H
DCQ
DCQ
D
CQ
S
R
D
CQ
S
R
DCQ
D
CQ
S
R
*NOTE: Stages C thru G (not shown in detail) are identical to stages A and B above.
LOGIC DETAIL
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P ACKAGE DIMENSIONS
PDIP–16
N SUFFIX
CASE 648–08
ISSUE R
MIN MINMAX MAX
INCHES MILLIMETERS
DIM
A B C D
F G H J K L M S
18.80
6.35
3.69
0.39
1.02
0.21
2.80
7.50 0°
0.51
19.55
6.85
4.44
0.53
1.77
0.38
3.30
7.74 10°
1.01
0.740
0.250
0.145
0.015
0.040
0.008
0.110
0.295 0°
0.020
0.770
0.270
0.175
0.021
0.070
0.015
0.130
0.305 10°
0.040
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD FLASH.
5. ROUNDED CORNERS OPTIONAL.
2.54 BSC
1.27 BSC
0.100 BSC
0.050 BSC
–A
B
18
916
F
H
G
D
16 PL
S
C
–T
SEATING PLANE
K
J
M
L
TA0.25 (0.010)
M M
0.25 (0.010) T B A
M
S S
MIN MINMAX MAX
MILLIMETERS INCHES
DIM
A B C D F G J K M P R
9.80
3.80
1.35
0.35
0.40
0.19
0.10 0°
5.80
0.25
10.00
4.00
1.75
0.49
1.25
0.25
0.25 7°
6.20
0.50
0.386
0.150
0.054
0.014
0.016
0.008
0.004 0°
0.229
0.010
0.393
0.157
0.068
0.019
0.049
0.009
0.009 7°
0.244
0.019
1.27 BSC 0.050 BSC
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION.
1
8
916
–A
–B
D
16 PL
K
C
G
–T
SEATING
PLANE
R X 45°
M
J
F
P 8 PL
0.25 (0.010) B
M M
SOIC–16
D SUFFIX
CASE 751B–05
ISSUE J
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P ACKAGE DIMENSIONS
TSSOP–16
DT SUFFIX
CASE 948F–01
ISSUE O
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A 4.90 5.10 0.193 0.200 B 4.30 4.50 0.169 0.177 C ––– 1.20 ––– 0.047 D 0.05 0.15 0.002 0.006 F 0.50 0.75 0.020 0.030 G 0.65 BSC 0.026 BSC H 0.18 0.28 0.007 0.011 J 0.09 0.20 0.004 0.008
J1 0.09 0.16 0.004 0.006
K 0.19 0.30 0.007 0.012
K1 0.19 0.25 0.007 0.010
L 6.40 BSC 0.252 BSC
M 0 8 0 8
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH. PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED
0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE –W–.
____
SECTION N–N
SEATING PLANE
IDENT.
PIN 1
1
8
16
9
DETAIL E
J
J1
B
C
D
A
K
K1
H
G
DETAIL E
F
M
L
2X L/2
–U–
S
U0.15 (0.006) T
S
U0.15 (0.006) T
S
U
M
0.10 (0.004) V
S
T
0.10 (0.004)
–T–
–V–
–W–
0.25 (0.010)
16X REFK
N
N
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