Page 1
SEMICONDUCTOR TECHNICAL DATA
1
REV 6
Motorola, Inc. 1995
10/95
High–Performance Silicon–Gate CMOS
The MC74HC564 is identical in pinout to the LS564. The device inputs are
compatible with standard CMOS outputs; with pullup resistors, they are
compatible with LSTTL outputs.
This device is identical in function to the HC534A but has the flip–flop
inputs on the opposite side of the package from the outputs to facilitate PC
board layout.
Data meeting the setup time is clocked, in inverted form, to the outputs
with the rising edge of the Clock. The Output Enable input does not affect the
states of the flip–flops, but when Output Enable is high, all device outputs are
forced to the high–impedance state. Thus, data may be stored even when
the outputs are not enabled.
The HC564 is the inverting version of the HC574A.
• Output Drive Capability: 15 LSTTL Loads
• Outputs Directly Interface to CMOS, NMOS, and TTL
• Operating Voltage Range: 2 to 6 V
• Low Input Current: 1 µA
• High Noise Immunity Characteristic of CMOS Devices
• In Compliance with the Requirements Defined by JEDEC Standard
No. 7A
• Chip Complexity: 282 FETs or 70.5 Equivalent Gates
LOGIC DIAGRAM
DATA
INPUTS
D0
2 19
Q0
D1
D2
D3
D4
D5
D6
D7
CLOCK
OUTPUT
ENABLE
3
4
5
6
7
8
9
11
1
18
17
16
15
14
13
12
Q1
Q2
Q3
Q4
Q5
Q6
Q7
INVERTING
OUTPUTS
PIN 20 = V
CC
PIN 10 = GND
PIN ASSIGNMENT
D4
D2
D1
D0
OUTPUT
ENABLE
GND
D7
D6
D5
D3 5
4
3
2
1
10
9
8
7
6
14
15
16
17
18
19
20
11
12
13
Q3
Q2
Q1
Q0
V
CC
CLOCK
Q7
Q6
Q5
Q4
FUNCTION TABLE
Inputs Output
Output
Enable Clock D Q
L H L
L L H
L L,H, X No Change
H X X Z
X = don’t care
Z = high impedance
DW SUFFIX
SOIC PACKAGE
CASE 751D–04
N SUFFIX
PLASTIC PACKAGE
CASE 738–03
ORDERING INFORMATION
MC74HCXXXN
MC74HCXXXDW
Plastic
SOIC
1
20
1
20
Page 2
MC74HC564
MOTOROLA High–Speed CMOS Logic Data
DL129 — Rev 6
2
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
V
CC
DC Supply Voltage (Referenced to GND)
– 0.5 to + 7.0
V
V
in
DC Input Voltage (Referenced to GND)
– 1.5 to VCC + 1.5
V
V
out
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
I
in
DC Input Current, per Pin
± 20
mA
I
out
DC Output Current, per Pin
± 35
mA
I
CC
DC Supply Current, VCC and GND Pins
± 75
mA
P
D
Power Dissipation in Still Air Plastic DIP†
SOIC Package†
750
500
mW
T
stg
Storage Temperature
– 65 to + 150
_
C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
260
_
C
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
V
CC
DC Supply Voltage (Referenced to GND)
2.0
6.0
V
Vin, V
out
DC Input Voltage, Output Voltage (Referenced to GND)
0
V
CC
V
T
A
Operating Temperature, All Package Types
– 55
+ 125
_
C
tr, t
f
Input Rise and Fall Time VCC = 2.0 V
(Figure 1) VCC = 4.5 V
VCC = 6.0 V
0
0
0
1000
500
400
ns
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Symbol
Parameter
Test Conditions
V
CC
V
– 55 to
25_C
v
85_Cv 125_C
Unit
V
IH
Minimum High–Level Input
Voltage
V
out
= 0.1 V or VCC – 0.1 V
|I
out
| v 20 µA
2.0
4.5
6.0
1.5
3.15
4.2
1.5
3.15
4.2
1.5
3.15
4.2
V
V
IL
Maximum Low–Level Input
Voltage
V
out
= 0.1 V or VCC – 0.1 V
|I
out
| v 20 µA
2.0
4.5
6.0
0.3
0.9
1.2
0.3
0.9
1.2
0.3
0.9
1.2
V
V
OH
Minimum High–Level Output
Voltage
Vin = VIH or V
IL
|I
out
| v 20 µA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
Vin = VIH or VIL|I
out
| v 6.0 mA
|I
out
| v 7.8 mA
4.5
6.0
3.98
5.48
3.84
5.34
3.70
5.20
V
OL
Maximum Low–Level Output
Voltage
Vin = VIH or V
IL
|I
out
| v 20 µA
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
Vin = VIH or VIL|I
out
| v 6.0 mA
|I
out
| v 7.8 mA
4.5
6.0
0.26
0.26
0.33
0.33
0.40
0.40
I
in
Maximum Input Leakage Current
Vin = VCC or GND
6.0
± 0.1
± 1.0
± 1.0
µA
I
OZ
Maximum Three–State Leakage
Current
Output in High–Impedance State
Vin = VIL or V
IH
V
out
= VCC or GND
6.0
± 0.5
± 5.0
± 10
µA
I
CC
Maximum Quiescent Supply
Current (per Package)
Vin = VCC or GND
I
out
= 0 µA
6.0
8
80
160
µA
NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance circuit. For proper operation, Vin and
V
out
should be constrained to the
range GND v (Vin or V
out
) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
Page 3
MC74HC564
High–Speed CMOS Logic Data
DL129 — Rev 6
3 MOTOROLA
AC ELECTRICAL CHARACTERISTICS (C
L
= 50 pF, Input tr = tf = 6 ns)
Guaranteed Limit
Symbol
Parameter
V
CC
V
– 55 to
25_C
v
85_Cv 125_C
Unit
f
max
Maximum Clock Frequency (50% Duty Cycle)
(Figures 1 and 4)
2.0
4.5
6.0
6.0
30
35
4.8
24
28
4.0
20
24
MHz
t
PLH
,
t
PHL
Maximum Propagation Delay, Clock to Q
(Figures 1 and 4)
2.0
4.5
6.0
175
35
30
220
44
37
265
53
45
ns
t
PLZ
,
t
PHZ
Maximum Propagation Delay, Output Enable to Q
(Figures 2 and 5)
2.0
4.5
6.0
150
30
26
190
38
33
225
45
38
ns
t
PZL
,
t
PZH
Maximum Propagation Delay, Output Enable to Q
(Figures 2 and 5)
2.0
4.5
6.0
150
30
26
190
38
33
225
45
38
ns
t
TLH
,
t
THL
Maximum Output Transition Time, Any Output
(Figures 1 and 4)
2.0
4.5
6.0
60
12
10
75
15
13
90
18
15
ns
C
in
Maximum Input Capacitance
—
10
10
10
pF
C
out
Maximum Three–State Output Capacitance
(Output in High–Impedance State)
—
15
15
15
pF
NOTES:
1. For propagation delays with loads other than 50 pF, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
2. Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
C
PD
Power Dissipation Capacitance (Per Flip–Flop)*
38
pF
*Used to determine the no–load dynamic power consumption: PD = CPD V
CC
2
f + ICC VCC. For load considerations, see Chapter 2 of the
Motorola High–Speed CMOS Data Book (DL129/D).
TIMING REQUIREMENTS (Input t
r
= tf = 6 ns)
Guaranteed Limit
Symbol
Parameter
V
CC
V
– 55 to
25_C
v
85_Cv 125_C
Unit
t
su
Minimum Setup Time, Data to Clock
(Figure 3)
2.0
4.5
6.0
100
20
17
125
25
21
150
30
26
ns
t
h
Minimum Hold Time, Clock to Data
(Figure 3)
2.0
4.5
6.0
5
5
5
5
5
5
5
5
5
ns
t
w
Minimum Pulse Width, Clock
(Figure 1)
2.0
4.5
6.0
80
16
14
100
20
17
120
24
20
ns
tr, t
f
Maximum Input Rise and Fall Times
(Figure 1)
2.0
4.5
6.0
1000
500
400
1000
500
400
1000
500
400
ns
NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
Page 4
MC74HC564
MOTOROLA High–Speed CMOS Logic Data
DL129 — Rev 6
4
SWITCHING WAVEFORMS
Figure 1.
CLOCK
Q
t
r
t
f
V
CC
GND
90%
50%
10%
90%
50%
10%
t
PLH
t
PHL
t
TLH
t
THL
50%
DATA
CLOCK
V
CC
Figure 2.
VALID
GND
Figure 3.
t
w
1/f
max
V
CC
GND
t
su
t
h
50%
OUTPUT
ENABLE
Q
Q
50%
50%
50%
90%
10%
t
PZL
t
PLZ
t
PZHtPHZ
V
CC
GND
HIGH
IMPEDANCE
V
OL
V
OH
HIGH
IMPEDANCE
TEST CIRCUITS
*Includes all probe and jig capacitance
CL*
TEST POINT
DEVICE
UNDER
TEST
OUTPUT
Figure 4.
*Includes all probe and jig capacitance
CL*
TEST POINT
DEVICE
UNDER
TEST
OUTPUT
Figure 5.
CONNECT TO VCC WHEN
TESTING t
PLZ
AND t
PZL
.
CONNECT TO GND WHEN
TESTING t
PHZ
AND t
PZH
.
1 k
Ω
Page 5
MC74HC564
High–Speed CMOS Logic Data
DL129 — Rev 6
5 MOTOROLA
EXPANDED LOGIC DIAGRAM
D
C
QD0
2 19
Q0
D
C
Q
D1
3 18
Q1
D
C
Q
D2
4 17
Q2
D
C
Q
D3
5 16
Q3
D
C
QD4
6 15
Q4
D
C
Q
D5
7 14
Q5
D
C
QD6
8 13
Q6
D
C
Q
D7
9 12
Q7
11
1
CLOCK
OUTPUT
ENABLE
Page 6
MC74HC564
MOTOROLA High–Speed CMOS Logic Data
DL129 — Rev 6
6
OUTLINE DIMENSIONS
N SUFFIX
PLASTIC PACKAGE
CASE 738–03
ISSUE E
DW SUFFIX
PLASTIC SOIC PACKAGE
CASE 751D–04
ISSUE E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD
FLASH.
M
L
J
20 PL
M
B
M
0.25 (0.010) T
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 25.66 27.171.010 1.070
B 6.10 6.600.240 0.260
C 3.81 4.570.150 0.180
D 0.39 0.550.015 0.022
G 2.54 BSC0.100 BSC
J 0.21 0.380.008 0.015
K 2.80 3.550.110 0.140
L 7.62 BSC0.300 BSC
M 0 15 0 15
N 0.51 1.010.020 0.040
_ __ _
E
1.27 1.770.050 0.070
1
11
10
20
–A–
SEATING
PLANE
K
N
FG
D
20 PL
–T–
M
A
M
0.25 (0.010) T
E
B
C
F
1.27 BSC0.050 BSC
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.150
(0.006) PER SIDE.
5. DIMENSION D DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.13
(0.005) TOTAL IN EXCESS OF D DIMENSION
AT MAXIMUM MATERIAL CONDITION.
–A–
–B–
20
1
11
10
S
A
M
0.010 (0.25) B
S
T
D20X
M
B
M
0.010 (0.25)
P10X
J
F
G
18X
K
C
–T–
SEATING
PLANE
M
R
X 45
_
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A 12.65 12.95 0.499 0.510
B 7.40 7.60 0.292 0.299
C 2.35 2.65 0.093 0.104
D 0.35 0.49 0.014 0.019
F 0.50 0.90 0.020 0.035
G 1.27 BSC 0.050 BSC
J 0.25 0.32 0.010 0.012
K 0.10 0.25 0.004 0.009
M 0 7 0 7
P 10.05 10.55 0.395 0.415
R 0.25 0.75 0.010 0.029
_ _
_ _
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters can and do vary in different
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MC74HC564/D
*MC74HC564/D*
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