Datasheet MC54HC4060AJ, MC74HC4060ADT, MC74HC4060AD Datasheet (Motorola)

Page 1

SEMICONDUCTOR TECHNICAL DATA
3–1
REV 6
Motorola, Inc. 1995
10/95
3–1
REV 1
Motorola, Inc. 1996
3/96
High–Performance Silicon–Gate CMOS
The MC54/74C4060A is identical in pinout to the standard CMOS MC14060B. The device inputs are compatible with standard CMOS out­puts; with pullup resistors, they are compatible with LSTTL outputs.
This device consists of 14 master–slave flip–flops and an oscillator with a frequency that is controlled either by a crystal or by an RC circuit connected externally. The output of each flip–flop feeds the next and the frequency at each output is half of that of the preceding one. The state of the counter advances on the negative–going edge of the Osc In. The active–high Reset is asynchronous and disables the oscillator to allow very low power consumption during stand–by operation.
State changes of the Q outputs do not occur simultaneously because of internal ripple delays. Therefore, decoded output signals are subject to decoding spikes and may have to be gated with Osc Out 2 of the HC4060A.
Output Drive Capability: 10 LSTTL Loads
Outputs Directly Interface to CMOS, NMOS, and TTL
Operating Voltage Range: 2 to 6 V
Low Input Current: 1 µA
High Noise Immunity Characteristic of CMOS Devices
In Compliance With JEDEC Standard No. 7A Requirements
Chip Complexity: 390 FETs or 97.5 Equivalent Gates
LOGIC DIAGRAM
Q4
7
Q5
5
Q6
4
Q7
6
Q8
14
Q9
13
Q10
15
Q12
1
Q13
2
Q14
3
Osc In
11
Reset
12
Pin 16 = V
CC
Pin 8 = GND
Osc Out 1 Osc Out 2
910
1516 14 13 12 11 10
21 3 4 5 6 7
V
CC
9
8
Q10 Q8 Q9 Reset Osc In
Osc
Out 1
Osc
Out 2
Q12 Q13 Q14 Q6 Q5 Q7 Q4
GND
Pinout: 16–Lead Plastic Package (Top View)

FUNCTION TABLE
Clock Reset Output State
X
L L H
No Charge
Advance to Next State
All Outputs Are Low
D SUFFIX
SOIC PACKAGE
CASE 751B–05
N SUFFIX
PLASTIC PACKAGE
CASE 648–08
1
16
1
16
J SUFFIX
CERAMIC PACKAGE
CASE 620–10
1
16
ORDERING INFORMATION
MC54HCXXXXAJ MC74HCXXXXAN MC74HCXXXXAD MC74HCXXXXADT
Ceramic Plastic SOIC TSSOP
1
16
DT SUFFIX
TSSOP PACKAGE
CASE 748C–03
Page 2
MC54/74HC4060A
MOTOROLA High–Speed CMOS Logic Data
DL129 — Rev 6
3–2
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
V
CC
DC Supply Voltage (Referenced to GND)
– 0.5 to + 7.0
V
V
in
DC Input Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
V
out
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
I
in
DC Input Current, per Pin
± 20
mA
I
out
DC Output Current, per Pin
± 25
mA
I
CC
DC Supply Current, VCC and GND Pins
± 50
mA
P
D
Power Dissipation in Still Air,Plastic or Ceramic DIP†
SOIC Package†
TSSOP Package†
750 500 450
mW
T
stg
Storage Temperature Range
– 65 to + 150
_
C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds
Plastic DIP, SOIC or TSSOP Package
Ceramic DIP
260 300
_
C
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
Ceramic DIP: – 10 mW/_C from 100_ to 125_C SOIC Package: – 7 mW/_C from 65_ to 125_C TSSOP Package: – 6.1 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
V
CC
DC Supply Voltage (Referenced to GND)
2.5*
6.0
V
Vin, V
out
DC Input Voltage, Output Voltage (Referenced to GND)
0
V
CC
V
T
A
Operating Temperature Range, All Package Types
– 55
+ 125
_
C
tr, t
f
Input Rise/Fall Time VCC = 2.0 V
(Figure 1) VCC = 4.5 V
VCC = 6.0 V
0 0 0
1000
500 400
ns
*The oscillator is guaranteed to function at 2.5 V minimum. However, parametrics are tested at
2.0 V by driving Pin 11 with an external clock source.
DC CHARACTERISTICS (Voltages Referenced to GND)
V
Guaranteed Limit
Symbol
Parameter
Condition
V
CC V
–55 to 25°C 85°C 125°C
Unit
V
IH
Minimum High–Level Input Voltage V
out
= 0.1V or VCC –0.1V
|I
out
| 20µA
2.0
3.0
4.5
6.0
1.50
2.10
3.15
4.20
1.50
2.10
3.15
4.20
1.50
2.10
3.15
4.20
V
V
IL
Maximum Low–Level Input Voltage V
out
= 0.1V or VCC – 0.1V
|I
out
| 20µA
2.0
3.0
4.5
6.0
0.50
0.90
1.35
1.80
0.50
0.90
1.35
1.80
0.50
0.90
1.35
1.80
V
V
OH
Minimum High–Level Output Voltage (Q4–Q10, Q12–Q14)
Vin = VIH or V
IL
|I
out
| 20µA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
Vin =VIH or V
IL
|I
out
| 2.4mA
|I
out
| 4.0mA
|I
out
| 5.2mA
3.0
4.5
6.0
2.48
3.98
5.48
2.34
3.84
5.34
2.20
3.70
5.20
This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high–impedance cir­cuit. For proper operation, Vin and V
out
should be constrained to the
range GND v (Vin or V
out
) v VCC.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open.
Page 3
MC54/74HC4060A
High–Speed CMOS Logic Data DL129 — Rev 6
3–3 MOTOROLA
DC CHARACTERISTICS (Voltages Referenced to GND)
Symbol Unit
Guaranteed Limit
V
CC V
ConditionParameter
Symbol Unit≤125°C≤85°C–55 to 25°C
V
CC V
ConditionParameter
V
OL
Maximum Low–Level Output Voltage (Q4–Q10, Q12–Q14)
Vin = VIH or V
IL
|I
out
| 20µA
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
Vin = VIH or V
IL
|I
out
| 2.4mA
|I
out
| 4.0mA
|I
out
| 5.2mA
3.0
4.5
6.0
0.26
0.26
0.26
0.33
0.33
0.33
0.40
0.40
0.40
V
OH
Minimum High–Level Output Voltage (Osc Out 1, Osc Out 2)
Vin = VCC or GND |I
out
| 20µA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
Vin =VCC or GND |I
out
| 0.7mA
|I
out
| 1.0mA
|I
out
| 1.3mA
3.0
4.5
6.0
2.48
3.98
5.48
2.34
3.84
5.34
2.20
3.70
5.20
V
OL
Maximum Low–Level Output Voltage (Osc Out 1, Osc Out 2)
Vin = VCC or GND |I
out
| 20µA
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
Vin =VCC or GND |I
out
| 0.7mA
|I
out
| 1.0mA
|I
out
| 1.3mA
3.0
4.5
6.0
0.26
0.26
0.26
0.33
0.33
0.33
0.40
0.40
0.40
I
in
Maximum Input Leakage Current Vin = VCC or GND 6.0 ±0.1 ±1.0 ±1.0 µA
I
CC
Maximum Quiescent Supply Current (per Package)
Vin = VCC or GND I
out
= 0µA
6.0 4 40 160 µA
NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
AC CHARACTERISTICS (C
L
= 50 pF, Input tr = tf = 6 ns)
V
Guaranteed Limit
Symbol
Parameter
V
CC V
–55 to 25°C 85°C 125°C
Unit
f
max
Maximum Clock Frequency (50% Duty Cycle) (Figures 1 and 4)
2.0
3.0
4.5
6.0
6.0 10 30 50
9.0 14 28 45
8.0 12 25 40
MHz
t
PLH
,
t
PHL
Maximum Propagation Delay, Osc In to Q4* (Figures 1 and 4)
2.0
3.0
4.5
6.0
300 180
60 51
375 200
75 64
450 250
90 75
ns
t
PLH
,
t
PHL
Maximum Propagation Delay, Osc In to Q14* (Figures 1 and 4)
2.0
3.0
4.5
6.0
500 350 250 200
750 450 275 220
1000
600 300 250
ns
t
PHL
Maximum Propagation Delay, Reset to Any Q (Figures 2 and 4)
2.0
3.0
4.5
6.0
195
75 39 33
245 100
49 42
300 125
61 53
ns
t
PLH
,
t
PHL
Maximum Propagation Delay, Qn to Qn+1 (Figures 3 and 4)
2.0
3.0
4.5
6.0
75 60 15 13
95 75 19 16
125
95 24 20
ns
Page 4
MC54/74HC4060A
MOTOROLA High–Speed CMOS Logic Data
DL129 — Rev 6
3–4
AC CHARACTERISTICS (C
L
= 50 pF, Input tr = tf = 6 ns) – continued
V
Guaranteed Limit
Symbol
Parameter
V
CC V
–55 to 25°C 85°C 125°C
Unit
t
TLH
,
t
THL
Maximum Output Transition Time, Any Output (Figures 1 and 4)
2.0
3.0
4.5
6.0
75 27 15 13
95 32 19 16
110
36 22 19
ns
C
in
Maximum Input Capacitance 10 10 10 pF
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the Motorola High–
Speed CMOS Data Book (DL129/D).
* For TA = 25°C and CL = 50 pF, typical propagation delay from Clock to other Q outputs may be calculated with the following equations:
VCC = 2.0 V: tP = [93.7 + 59.3 (n–1)] ns VCC = 4.5 V: tP = [30.25 + 14.6 (n–1)] ns VCC = 3.0 V: tP = [61.5+ 34.4 (n–1)] ns VCC = 6.0 V: tP = [24.4 + 12 (n–1)] ns
Typical @ 25°C, VCC = 5.0 V
C
PD
Power Dissipation Capacitance (Per Package)*
35
pF
*Used to determine the no–load dynamic power consumption: PD = CPD V
CC
2
f + ICC VCC. For load considerations, see Chapter 2 of the
Motorola High–Speed CMOS Data Book (DL129/D).
TIMING REQUIREMENTS (Input t
r
= tf = 6 ns)
V
Guaranteed Limit
Symbol
Parameter
V
CC V
–55 to 25°C 85°C 125°C
Unit
t
rec
Minimum Recovery Time, Reset Inactive to Clock (Figure 2)
2.0
3.0
4.5
6.0
100
75 20 17
125 100
25 21
150 120
30 25
ns
t
w
Minimum Pulse Width, Clock (Figure 1)
2.0
3.0
4.5
6.0
75 27 15 13
95 32 19 16
110
36 23 19
ns
t
w
Minimum Pulse Width, Reset (Figure 2)
2.0
3.0
4.5
6.0
75 27 15 13
95 32 19 16
110
36 23 19
ns
tr, t
f
Maximum Input Rise and Fall Times (Figure 1)
2.0
3.0
4.5
6.0
1000
800 500 400
1000
800 500 400
1000
800 500 400
ns
NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
Page 5
MC54/74HC4060A
High–Speed CMOS Logic Data DL129 — Rev 6
3–5 MOTOROLA
PIN DESCRIPTIONS
INPUTS
Osc In (Pin 11)
Negative–edge triggering clock input. A high–to–low tran­sition on this input advances the state of the counter. Osc In may be driven by an external clock source.
Reset (Pin 12)
Active–high reset. A high level applied to this input asynch­ronously resets the counter to its zero state (forcing all Q out­puts low) and disables the oscillator.
OUTPUTS Q4—Q10, Q12–Q14 (Pins 7, 5, 4, 6, 13, 15, 1, 2, 3)
Active–high outputs. Each Qn output divides the Clock input frequency by 2N. The user should note the Q1, Q2, Q3 and Q11 are not available as outputs.
Osc Out 1, Osc Out 2 (Pins 9, 10)
Oscillator outputs. These pins are used in conjunction with Osc In and the external components to form an oscillator (See NO TAG and NO TAG). When Osc In is being driven with an external clock source, Osc Out 1 and Osc Out 2 must be left open circuited. With the crystal oscillator configuration in Figure 6, Osc Out 2 must be left open circuited.
SWITCHING WAVEFORMS
t
w
t
f
Osc In
Q
V
CC
GND
90% 50% 10%
t
r
t
w
90%
50%
10%
t
PHL
1/f
MAX
t
PLH
t
TLH
t
THL
Reset
V
CC
GND
t
PHL
50%
Figure 1. Figure 2.
Q
V
CC
GND
50%
Osc In 50%
t
rec
50%
Qn
V
CC
GND
50%
Qn+1
CL*
*Includes all probe and jig capacitance
TEST
POINT
DEVICE UNDER
TEST
OUTPUT
Figure 3. Figure 4. Test Circuit
t
PLH
t
PHL
Page 6
MC54/74HC4060A
MOTOROLA High–Speed CMOS Logic Data
DL129 — Rev 6
3–6
Figure 5. Expanded Logic Diagram
C
C
R
Osc Out 2
9
Q
Q
C
C
R
Q
Q
C
CQQ
C
CQQ
C
CQQ
C
C
Q
Q4
7
Q5
5
Q12
1
Q13
2
Q14
3
Q6 = Pin 4 Q7 = Pin 6 Q8 = Pin 14 Q9 = Pin 13
Q10 = Pin 15 VCC = Pin 16 GND = Pin 8
Osc Out 1
10
Osc In
11
Reset
12
Figure 6. Oscillator Circuit Using RC Configuration
Reset
12
Osc In 11 Osc Out 1 10 Osc Out 2 9
R
tc
C
tc
R
S
For 2.0V
VCC ≤ 6.0V
10Rtc > RS > 2R
tc
400Hz
f ≤ 400Khz:
f
[
1
3 RtcC
tc
(f in Hz, Rtcin ohms, Ctcin farads)
The formula may vary for other frequencies.
Figure 7. Pierce Crystal Oscillator Circuit
Reset
12
Osc In 11 Osc Out 1 10 9 Osc Out 2
R
f
C1 C2
R1
Page 7
MC54/74HC4060A
High–Speed CMOS Logic Data DL129 — Rev 6
3–7 MOTOROLA
TABLE 1. CRYSTAL OSCILLATOR AMPLIFIER SPECIFICATIONS (T
A
= 25°C; Input = Pin 11, Output = Pin 10)
Type
Positive Reactance (Pierce)
Input Resistance, R
in
60M Minimum
Output Impedance, Z
out
(4.5V Supply) 200 (See Text)
Input Capacitance, C
in
5pF Typical
Output Capacitance, C
out
7pF Typical
Series Capacitance, C
a
5pF Typical
Open Loop Voltage Gain with Output at Full Swing, α 3Vdc Supply
4Vdc Supply 5Vdc Supply 6Vdc Supply
5.0 Expected Minimum
4.0 Expected Minimum
3.3 Expected Minimum
3.1 Expected Minimum
PIERCE CRYSTAL OSCILLATOR DESIGN
Figure 8. Equivalent Crystal Networks
R
S
LSC
S
Re Xe 212121
C
O
Value are supplied by crystal manufacturer (parallel resonant crystal).
Figure 9. Series Equivalent Crystal Load Figure 10. Parasitic Capacitances of the Amplifier
Z
load
–jX
Co
–jX
C2
R
–jX
C
–jX
Cs
jX
Ls
R
S
R
load
X
load
NOTE: C = C1 + Cin and R = R1 + R
out
. Co is considered as part of
the load. Ca and Rf typically have minimal effect below 2MHz.
C
in
C
out
C
a
Values are listed in Table 1.
Page 8
MC54/74HC4060A
MOTOROLA High–Speed CMOS Logic Data
DL129 — Rev 6
3–8
DESIGN PROCEDURES
The following procedure applies for oscillators operating below 2MHz where Z is a resistor R1. Above 2MHz, additional
impedance elements should be considered: C
out
and Ca of the amp, feedback resistor Rf, and amplifier phase shift error from
180°C.
Step 1: Calculate the equivalent series circuit of the crystal at the frequency of oscillation.
Z
e
+
*
jX
C
o
(Rs)
jX
L
s
*
jX
C
s
)
*
jX
C
o
)
Rs)
jX
L
s
*
jX
C
s
+
Re)
jX
e
Reactance jXe should be positive, indicating that the crystal is operating as an inductive reactance at the oscillation frequency. The maximum Rs for the crystal should be used in the equation.
Step 2: Determine β, the attenuation, of the feedback network. For a closed-loop gain of 2,Aνβ = 2,β = 2/Aν where Aν is the gain
of the HC4060A amplifier.
Step 3: Determine the manufacturer’s loading capacitance. For example: A manufacturer may specify an external load capaci-
tance of 32pF at the required frequency.
Step 4: Determine the required Q of the system, and calculate R
load
, For example, a manufacturer specifies a crystal Q of
100,000. In-circuit Q is arbitrarily set at 20% below crystal Q or 80,000. Then R
load
= (2πfoLS/Q) – Rs where Ls and Rs are crystal
parameters.
Step 5: Simultaneously solve, using a computer,
b
+
XC@
X
C2
R@Re)
XC2(Xe*
XC)
( Eq 1 )(with feedback phase shift = 180°)
Xe+
XC2)
XC)
ReX
C2
R
+
X
C
load
( Eq 2 )(where the loading capacitor is an external load, not including Co)
R
load
+
RX
C
o
XC2[(XC)
XC2)(XC)
X
C
o
)*XC(XC)
X
C
o
)
XC2)]
X
2
C2(XC
)
X
C
o
)2)
R2(XC)
X
C
o
)
XC2)
2
( Eq 3 )
Here R = R
out
+ R1. R
out
is amp output resistance, R1 is Z. The C corresponding to XC is given by C = C1 + Cin.
Alternately, pick a value for R1 (i.e, let R1 = RS). Solve Equations 1 and 2 for C1 and C2. Use Equation 3 and the fact that Q =
2πfoLs/(Rs + R
load
) to find in-circuit Q. If Q is not satisfactory pick another value for R1 and repeat the procedure.
CHOOSING R1
Power is dissipated in the effective series resistance of the crystal. The drive level specified by the crystal manufacturer is the maximum stress that a crystal can withstand without damage or excessive shift in frequency. R1 limits the drive level.
To verify that the maximum dc supply voltage does not overdrive the crystal, monitor the output frequency as a func­tion of voltage at Osc Out 2 (Pin 9). The frequency should increase very slightly as the dc supply voltage is increased. An overdriven crystal will decrease in frequency or become unstable with an increase in supply voltage. The operating supply voltage must be reduced or R1 must be increased in value if the overdriven condition exists. The user should note that the oscillator start-up time is proportional to the value of R1.
SELECTING R
f
The feedback resistor, Rf, typically ranges up to 20M. R
f
determines the gain and bandwidth of the amplifier. Proper bandwidth insures oscillation at the correct frequency plus roll-off to minimize gain at undesirable frequencies, such as
the first overtone. Rf must be large enough so as to not affect the phase of the feedback network in an appreciable manner.
ACKNOWLEDGEMENTS AND RECOMMENDED
REFERENCES
The following publications were used in preparing this data sheet and are hereby acknowledged and recommended for reading:
Technical Note TN-24, Statek Corp.
Technical Note TN-7, Statek Corp.
D. Babin, “Designing Crystal Oscillators”, Machine Design, March 7, 1985.
D. Babin, “ Guidelines for C rystal Oscillator D esign”, Machine Design, April 25, 1985.
ALSO RECOMMENDED FOR READING:
E. Hafner, “The Piezoelectric Crystal Unit-Definitions and Method of Measurement”, Proc. IEEE, Vol. 57, No. 2, Feb.,
1969.
D. Kemper, L. Rosine, “Quartz Crystals for Frequency Control”, Electro-Technology, June, 1969.
P. J. Ottowitz, “A Guide to Crystal Selection”, Electronic Design, May, 1966.
Page 9
MC54/74HC4060A
High–Speed CMOS Logic Data DL129 — Rev 6
3–9 MOTOROLA
Clock
Reset
Q4
1 2 4 8 16 32 64 128 256 512 1024 2048 4096 8192 16384
Q5 Q6 Q7 Q8
Q9 Q10 Q12 Q13 Q14
Figure 11. Timing Diagram
Page 10
MC54/74HC4060A
MOTOROLA High–Speed CMOS Logic Data
DL129 — Rev 6
3–10
OUTLINE DIMENSIONS
J SUFFIX
CERAMIC PACKAGE
CASE 620–10
ISSUE V
N SUFFIX
PLASTIC PACKAGE
CASE 648–08
ISSUE R
19.05
6.10 —
0.39
1.40
0.21
3.18
19.93
7.49
5.08
0.50
1.65
0.38
4.31
0
°
0.51
15
°
1.01
1.27 BSC
2.54 BSC
7.62 BSC
MIN MINMAX MAX
INCHES MILLIMETERS
DIM
0.750
0.240 —
0.015
0.055
0.008
0.125
0.785
0.295
0.200
0.020
0.065
0.015
0.170
0.050 BSC
0.100 BSC
0.300 BSC
A B C D E F G J K
L M N
0
°
0.020
15
°
0.040
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL.
4. DIM F MAY NARROW TO 0.76 (0.030) WHERE THE LEAD ENTERS THE CERAMIC BODY.
1 8
916
–A
–B
C
K
N
G
E
F
D 16 PL
–T
SEATING
PLANE
M
L
J 16 PL
0.25 (0.010) T A
M
S
0.25 (0.010) T B
M
S
MIN MINMAX MAX
INCHES MILLIMETERS
DIM
A B C D
F G H
J K
L M S
18.80
6.35
3.69
0.39
1.02
0.21
2.80
7.50 0
°
0.51
19.55
6.85
4.44
0.53
1.77
0.38
3.30
7.74 10
°
1.01
0.740
0.250
0.145
0.015
0.040
0.008
0.110
0.295 0
°
0.020
0.770
0.270
0.175
0.021
0.070
0.015
0.130
0.305 10
°
0.040
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD FLASH.
5. ROUNDED CORNERS OPTIONAL.
2.54 BSC
1.27 BSC
0.100 BSC
0.050 BSC
–A
B
1 8
916
F
H
G
D
16 PL
S
C
–T
SEATING PLANE
K
J
M
L
T A0.25 (0.010)
M M
0.25 (0.010) T B A
M
S S
MIN MINMAX MAX
MILLIMETERS INCHES
DIM
A B C D F G J K M P R
9.80
3.80
1.35
0.35
0.40
0.19
0.10 0
°
5.80
0.25
10.00
4.00
1.75
0.49
1.25
0.25
0.25 7
°
6.20
0.50
0.386
0.150
0.054
0.014
0.016
0.008
0.004 0
°
0.229
0.010
0.393
0.157
0.068
0.019
0.049
0.009
0.009 7
°
0.244
0.019
1.27 BSC 0.050 BSC
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION.
1
8
916
–A
–B
D 16 PL
K
C
G
–T
SEATING
PLANE
R X 45°
M
J
F
P 8 PL
0.25 (0.010) B
M M
D SUFFIX
PLASTIC SOIC PACKAGE
CASE 751B–05
ISSUE J
Page 11
MC54/74HC4060A
High–Speed CMOS Logic Data DL129 — Rev 6
3–11 MOTOROLA
OUTLINE DIMENSIONS
DT SUFFIX
TSSOP PACKAGE
CASE 948C–03
ISSUE B
A
B
PIN 1 IDENTIFICATION
L
1 8
916
D
C
SEATING
G
H
F
M
DIMAMIN MAX MIN MAX
INCHES
––– 5.10 ––– 0.200
MILLIMETERS
B 4.30 4.50 0.169 0.177 C ––– 1.20 ––– 0047 D 0.05 0.25 0.002 0.010
F 0.45 0.55 0.018 0.022 G 0.65 BSC 0.026 BSC H 0.22 0.23 0.009 0.010
J 0.09 0.24 0.004 0.009
K 0.16 0.32 0.006 0.013
L 6.30 6.50 0.248 0.256 M 0 10 0 10
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY.
7. DIMENSIONS A AND B ARE TO BE DETERMINED AT DATUM PLANE –U–.
° ° ° °
J1 0.09 0.18 0.004 0.007 K1 0.16 0.26 0.006 0.010
K
K1
J
J1
SECTION A–A
A
A
16x REFK
0.100 (0.004)
M
0.200 (0.008)MT
PLANE
–P–
–T–
–U–
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MC54/74HC4060A/D
*MC54/74HC4060A/D*
CODELINE
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