Datasheet MC74HC393AFEL, MC74HC393ADTR2, MC74HC393ADT, MC74HC393AD, MC74HC393AN Datasheet (MOTOROLA)

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Page 1
Semiconductor Components Industries, LLC, 2000
March, 2000 – Rev. 2
1 Publication Order Number:
MC74HC393A/D
MC74HC393A
Dual 4-Stage Binary Ripple Counter
High–Performance Silicon–Gate CMOS
This device consists of two independent 4–bit binary ripple counters with parallel outputs from each counter stage. A ÷ 256 counter can be obtained by cascading the two binary counters.
Internal flip–flops are triggered by high–to–low transitions of the clock input. Reset for the counters is asynchronous and active–high. State changes of the Q outputs do not occur simultaneously because of internal ripple delays. Therefore, decoded output signals are subject to decoding spikes and should not be used as clocks or as strobes except when gated with the Clock of the HC393A.
Output Drive Capability: 10 LSTTL Loads
Outputs Directly Interface to CMOS, NMOS, and TTL
Operating Voltage Range: 2 to 6 V
Low Input Current: 1 µA
High Noise Immunity Characteristic of CMOS Devices
In Compliance with the Requirements Defined by JEDEC Standard
No. 7A
Chip Complexity: 236 FETs or 59 Equivalent Gates
LOGIC DIAGRAM
Q1 Q2 Q3 Q4
CLOCK
RESET
1, 13
2, 12
3, 11 4, 10
5, 9 6, 8
PIN 14 = V
CC
PIN 7 = GND
BINARY
COUNTER
FUNCTION TABLE
Inputs
Clock Reset Outputs
XH L H L No Change L L No Change
L No Change L Advance to
Next State
Device Package Shipping
ORDERING INFORMATION
MC74HC393AN PDIP–14 2000 / Box MC74HC393AD SOIC–14
http://onsemi.com
55 / Rail
MC74HC393ADR2 SOIC–14 2500 / Reel
MARKING
DIAGRAMS
A = Assembly Location WL or L = Wafer Lot YY or Y = Year WW or W = Work Week
MC74HC393ADT TSSOP–14 96 / Rail MC74HC393ADTR2 TSSOP–14
2500 / Reel
TSSOP–14 DT SUFFIX
CASE 948G
HC
393A
ALYW
1
14
1
14
PDIP–14
N SUFFIX
CASE 646
MC74HC393AN
AWLYYWW
SOIC–14
D SUFFIX
CASE 751A
1
14
HC393A
AWLYWW
PIN ASSIGNMENT
11
12
13
14
8
9
105
4
3
2
1
7
6
Q2
b
Q1
b
RESET b
CLOCK b
V
CC
Q4
b
Q3
b
Q2
a
Q1
a
RESET a
CLOCK a
GND
Q3
a
Q4
a
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2
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
V
CC
DC Supply Voltage (Referenced to GND)
– 0.5 to + 7.0
V
V
in
DC Input Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
V
out
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
I
in
DC Input Current, per Pin
± 20
mA
I
out
DC Output Current, per Pin
± 25
mA
I
CC
DC Supply Current, VCC and GND Pins
± 50
mA
ÎÎ
Î
P
D
ОООООООООООО
Î
Power Dissipation in Still Air, Plastic DIP†
SOIC Package†
TSSOP Package†
ÎÎÎ
Î
750 500 450
Î
Î
mW
T
stg
Storage Temperature
– 65 to + 150
_
C
ÎÎ
Î
T
L
ОООООООООООО
Î
Lead Temperature, 1 mm from Case for 10 Seconds
Plastic DIP, SOIC or TSSOP Package
ÎÎÎ
Î
260
Î
Î
_
C
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C TSSOP Package: – 6.1 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
ÎÎ
Max
Unit
V
CC
DC Supply Voltage (Referenced to GND)
2.0
ÎÎ
6.0
V
Vin, V
out
DC Input Voltage, Output Voltage (Referenced to GND)
0
ÎÎ
V
CC
V
T
A
Operating Temperature, All Package Types
– 55
ÎÎ
+ 125
_
C
ÎÎ
Î
tr, t
f
ООООООООООООО
Î
Input Rise and Fall Time VCC = 2.0 V
VCC = 3.0 V
(Figure 1) VCC = 4.5 V
VCC = 6.0 V
Î
Î
0 0 0 0
ÎÎ
ÎÎ
1000
600 500 400
Î
Î
ns
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
ÎÎ
Î
Symbol
ООООООО
Î
Parameter
ООООООО
Î
Test Conditions
ÎÎ
Î
V
CC V
ÎÎ
Î
– 55 to
25_C
ÎÎÎ
Î
Î
Î
v
85_C
ÎÎ
Î
v
125_C
Î
Î
Unit
ÎÎ
Î
ÎÎ
Î
V
IH
ООООООО
Î
ООООООО
Î
Minimum High–Level Input Voltage
ООООООО
Î
ООООООО
Î
V
out
= 0.1 V or VCC – 0.1 V
|I
out
| v 20 µA
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
1.5
2.1
3.15
4.2
ÎÎÎ
Î
Î
Î
Î
Î
Î
1.5
2.1
3.15
4.2
ÎÎ
Î
ÎÎ
Î
1.5
2.1
3.15
4.2
Î
Î
Î
Î
V
ÎÎ
Î
ÎÎ
Î
V
IL
ООООООО
Î
ООООООО
Î
Maximum Low–Level Input Voltage
ООООООО
Î
ООООООО
Î
V
out
= 0.1 V or VCC – 0.1 V
|I
out
| v 20 µA
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
0.5
0.9
1.35
1.80
ÎÎÎ
Î
Î
Î
Î
Î
Î
0.5
0.9
1.35
1.80
ÎÎ
Î
ÎÎ
Î
0.5
0.9
1.35
1.80
Î
Î
Î
Î
V
ÎÎ
Î
V
OH
ООООООО
Î
Minimum High–Level Output Voltage
ООООООО
Î
Vin = VIH or V
IL
|I
out
| v 20 µA
ÎÎ
Î
2.0
4.5
6.0
ÎÎ
Î
1.9
4.4
5.9
ÎÎÎ
Î
Î
Î
1.9
4.4
5.9
ÎÎ
Î
1.9
4.4
5.9
Î
Î
V
ÎÎÎОООООООÎООООООО
Î
Vin = VIH or VIL|I
out
| v 2.4 mA
|I
out
| v 4.0 mA
|I
out
| v 5.2 mA
ÎÎ
Î
3.0
4.5
6.0
ÎÎ
Î
2.48
3.98
5.48
ÎÎÎ
Î
Î
Î
2.34
3.84
5.34
ÎÎ
Î
2.20
3.70
5.20
Î
Î
This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high–impedance cir­cuit. For proper operation, Vin and V
out
should be constrained to the
range GND v (Vin or V
out
) v VCC.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open.
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DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Unit
Guaranteed Limit
V
CC
V
Test Conditions
Parameter
Symbol
Unit
v
125_C
ÎÎÎ
v
85_C
– 55 to
25_C
V
CC
V
Test Conditions
Parameter
Symbol
ÎÎ
Î
ÎÎ
Î
V
OL
ООООООО
Î
ООООООО
Î
Maximum Low–Level Output Voltage
ООООООО
Î
ООООООО
Î
Vin = VIH or V
IL
|I
out
| v 20 µA
ÎÎ
Î
ÎÎ
Î
2.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
0.1
0.1
0.1
ÎÎÎ
Î
Î
Î
Î
Î
Î
0.1
0.1
0.1
ÎÎ
Î
ÎÎ
Î
0.1
0.1
0.1
Î
Î
Î
Î
V
ÎÎÎОООООООÎООООООО
Î
Vin = VIH or VIL|I
out
| v 2.4 mA
|I
out
| v 4.0 mA
|I
out
| v 5.2 mA
ÎÎ
Î
3.0
4.5
6.0
ÎÎ
Î
0.26
0.26
0.26
ÎÎÎ
Î
Î
Î
0.33
0.33
0.33
ÎÎ
Î
0.40
0.40
0.40
Î
Î
ÎÎ
Î
I
in
ООООООО
Î
Maximum Input Leakage Current
ООООООО
Î
Vin = VCC or GND
ÎÎ
Î
6.0
ÎÎ
Î
± 0.1
ÎÎÎ
Î
Î
Î
± 1.0
ÎÎ
Î
± 1.0
Î
Î
µA
ÎÎ
Î
I
CC
ООООООО
Î
Maximum Quiescent Supply Current (per Package)
ООООООО
Î
Vin = VCC or GND I
out
= 0 µA
ÎÎ
Î
6.0
ÎÎ
Î
4
ÎÎÎ
Î
Î
40
ÎÎ
Î
160
Î
Î
µA
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book
(DL129/D).
AC ELECTRICAL CHARACTERISTICS (C
L
= 50 pF, Input tr = tf = 6 ns)
Guaranteed Limit
Symbol
Parameter
V
CC V
– 55 to
25_C
ÎÎÎ
v
85_Cv 125_C
Unit
ÎÎÎ
Î
ÎÎÎ
Î
f
max
ОООООООООООООО
Î
ОООООООООООООО
Î
Maximum Clock Frequency (50% Duty Cycle)
(Figures 1 and 3)
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
10 15 30 50
ÎÎÎ
Î
Î
Î
Î
Î
Î
9 14 28 45
ÎÎ
Î
ÎÎ
Î
8 12 25 40
Î
Î
Î
Î
MHz
ÎÎÎ
Î
ÎÎÎ
Î
t
PLH
,
t
PHL
ОООООООООООООО
Î
ОООООООООООООО
Î
Maximum Propagation Delay, Clock to Q1
(Figures 1 and 3)
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
70 40 24 20
ÎÎÎ
Î
Î
Î
Î
Î
Î
80 45 30 26
ÎÎ
Î
ÎÎ
Î
90 50 36 31
Î
Î
Î
Î
ns
ÎÎÎ
Î
ÎÎÎ
Î
t
PLH
,
t
PHL
ОООООООООООООО
Î
ОООООООООООООО
Î
Maximum Propagation Delay, Clock to Q2
(Figures 1 and 3)
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
100
56 34 20
ÎÎÎ
Î
Î
Î
Î
Î
Î
105
70 45 38
ÎÎ
Î
ÎÎ
Î
180 100
55 48
Î
Î
Î
Î
ns
ÎÎÎ
Î
ÎÎÎ
Î
t
PLH
,
t
PHL
ОООООООООООООО
Î
ОООООООООООООО
Î
Maximum Propagation Delay, Clock to Q3
(Figures 1 and 3)
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
130
80 44 37
ÎÎÎ
Î
Î
Î
Î
Î
Î
150 105
55 47
ÎÎ
Î
ÎÎ
Î
180 130
70 58
Î
Î
Î
Î
ns
ÎÎÎ
Î
ÎÎÎ
Î
t
PLH
,
t
PHL
ОООООООООООООО
Î
ОООООООООООООО
Î
Maximum Propagation Delay, Clock to Q4
(Figures 1 and 3)
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
160 110
52 44
ÎÎÎ
Î
Î
Î
Î
Î
Î
250 185
65 55
ÎÎ
Î
ÎÎ
Î
300 210
82 65
Î
Î
Î
Î
ns
ÎÎÎ
Î
ÎÎÎ
Î
t
PHL
ОООООООООООООО
Î
ОООООООООООООО
Î
Maximum Propagation Delay, Reset to any Q
(Figures 2 and 3)
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
80 48 30 26
ÎÎÎ
Î
Î
Î
Î
Î
Î
95 65 38 33
ÎÎ
Î
ÎÎ
Î
110
75 50 43
Î
Î
Î
Î
ns
ÎÎÎ
Î
ÎÎÎ
Î
t
TLH
,
t
THL
ОООООООООООООО
Î
ОООООООООООООО
Î
Maximum Output Transition Time, Any Output
(Figures 1 and 3)
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
75 27 15 13
ÎÎÎ
Î
Î
Î
Î
Î
Î
95 32 19 16
ÎÎ
Î
ÎÎ
Î
110
36 22 19
Î
Î
Î
Î
ns
C
in
Maximum Input Capacitance
10
ÎÎÎ
10
10
pF
NOTES:
1. For propagation delays with loads other than 50 pF , see Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book (DL129/D).
2. Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book (DL129/D).
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4
Typical @ 25°C, VCC = 5.0 V
C
PD
Power Dissipation Capacitance (Per Counter)*
35
pF
*Used to determine the no–load dynamic power consumption: PD = CPD V
CC
2
f + ICC VCC. For load considerations, see Chapter 2 of the
ON Semiconductor High–Speed CMOS Data Book (DL129/D).
TIMING REQUIREMENTS (Input t
r
= tf = 6 ns)
Guaranteed Limit
ÎÎÎ
Î
Symbol
ОООООООООООООО
Î
Parameter
ÎÎ
Î
V
CC V
ÎÎ
Î
– 55 to
25_C
ÎÎÎ
Î
Î
Î
v
85_C
ÎÎ
Î
v
125_C
Î
Î
Unit
ÎÎÎ
Î
ÎÎÎ
Î
t
rec
ОООООООООООООО
Î
ОООООООООООООО
Î
Minimum Recovery Time, Reset Inactive to Clock
(Figure 2)
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
25 15 10
9
ÎÎÎ
Î
Î
Î
Î
Î
Î
30 20 13 11
ÎÎ
Î
ÎÎ
Î
40 30 15 13
Î
Î
Î
Î
ns
ÎÎÎ
Î
ÎÎÎ
Î
t
w
ОООООООООООООО
Î
ОООООООООООООО
Î
Minimum Pulse Width, Clock
(Figure 1)
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
75 27 15 13
ÎÎÎ
Î
Î
Î
Î
Î
Î
95 32 19 15
ÎÎ
Î
ÎÎ
Î
110
36 22 19
Î
Î
Î
Î
ns
ÎÎÎ
Î
ÎÎÎ
Î
t
w
ОООООООООООООО
Î
ОООООООООООООО
Î
Minimum Pulse Width, Reset
(Figure 2)
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
75 27 15 13
ÎÎÎ
Î
Î
Î
Î
Î
Î
95 32 19 15
ÎÎ
Î
ÎÎ
Î
110
36 22 19
Î
Î
Î
Î
ns
ÎÎÎ
Î
ÎÎÎ
Î
tr, t
f
ОООООООООООООО
Î
ОООООООООООООО
Î
Maximum Input Rise and Fall Times
(Figure 1)
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
1000
800 500 400
ÎÎÎ
Î
Î
Î
Î
Î
Î
1000
800 500 400
ÎÎ
Î
ÎÎ
Î
1000
800 500 400
Î
Î
Î
Î
ns
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book
(DL129/D).
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PIN DESCRIPTIONS
INPUTS Clock (Pins 1, 13)
Clock input. The internal flip–flops are toggled and the counter state advances on high–to–low transitions of the clock input.
CONTROL INPUTS Reset (Pins 2, 12)
Active–high, asynchronous reset. A separate reset is provided for each counter. A high at the Reset input prevents counting and forces all four outputs low .
OUTPUTS Q1, Q2, Q3, Q4 (Pins 3, 4, 5, 6, 8, 9, 10, 11)
Parallel binary outputs Q4 is the most significant bit.
SWITCHING W AVEFORMS
t
PHL
V
CC
GND
V
CC
GND
50%
50%
50%
t
rec
CLOCK
Q
RESET
Figure 1. Figure 2.
Figure 3. Test Circuit
Q1
Q2
Q3
Q4
CLOCK
RESET
1, 13
2, 12
3, 11
4, 10
5, 9
6, 8
EXPANDED LOGIC DIAGRAM
*Includes all probe and jig capacitance
CL*
TEST
POINT
DEVICE UNDER
TEST
OUTPUT
CLOCK
Q
90%90% 50%
10%
t
f
t
r
V
CC
GND
t
w
1/f
max
t
PLH
t
PHL
90%
50%
10%
t
TLH
t
THL
C
DQ
t
w
Q
C
DQ
Q
C
DQ
Q
C
DQ
Q
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6
01234567891011121314150
CLOCK
RESET
Q1
Q2
Q3
Q4
TIMING DIAGRAM
COUNT SEQUENCE
Outputs
Count
Q4 Q3 Q2 Q1
0 L L L L 1 L L L H 2 L L H L 3 L L H H 4 L H L L 5 L H L H 6 L H H L 7 L H H H 8 H L L L
9 H L L H 10 H L H L 11 H L H H 12 H H L L 13 H H L H 14 H H H L 15 H H H H
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P ACKAGE DIMENSIONS
PDIP–14
N SUFFIX
CASE 646–06
ISSUE L
NOTES:
1. LEADS WITHIN 0.13 (0.005) RADIUS OF TRUE POSITION AT SEATING PLANE AT MAXIMUM MATERIAL CONDITION.
2. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL.
3. DIMENSION B DOES NOT INCLUDE MOLD FLASH.
4. ROUNDED CORNERS OPTIONAL.
17
14 8
B
A F
HG D
K
C
N
L
J
M
SEATING PLANE
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.715 0.770 18.16 19.56 B 0.240 0.260 6.10 6.60 C 0.145 0.185 3.69 4.69 D 0.015 0.021 0.38 0.53 F 0.040 0.070 1.02 1.78
G 0.100 BSC 2.54 BSC
H 0.052 0.095 1.32 2.41 J 0.008 0.015 0.20 0.38 K 0.115 0.135 2.92 3.43 L 0.300 BSC 7.62 BSC
M 0 10 0 10
N 0.015 0.039 0.39 1.01
____
SOIC–14
D SUFFIX
CASE 751A–03
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION.
–A–
–B–
G
P
7 PL
14 8
71
M
0.25 (0.010) B
M
S
B
M
0.25 (0.010) A
S
T
–T–
F
R
X 45
SEATING PLANE
D 14 PL
K
C
J
M
_
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A 8.55 8.75 0.337 0.344 B 3.80 4.00 0.150 0.157 C 1.35 1.75 0.054 0.068 D 0.35 0.49 0.014 0.019 F 0.40 1.25 0.016 0.049 G 1.27 BSC 0.050 BSC J 0.19 0.25 0.008 0.009 K 0.10 0.25 0.004 0.009 M 0 7 0 7 P 5.80 6.20 0.228 0.244 R 0.25 0.50 0.010 0.019
____
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P ACKAGE DIMENSIONS
TSSOP–14 DT SUFFIX
CASE 948G–01
ISSUE O
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A 4.90 5.10 0.193 0.200 B 4.30 4.50 0.169 0.177 C ––– 1.20 ––– 0.047 D 0.05 0.15 0.002 0.006 F 0.50 0.75 0.020 0.030 G 0.65 BSC 0.026 BSC H 0.50 0.60 0.020 0.024 J 0.09 0.20 0.004 0.008
J1 0.09 0.16 0.004 0.006
K 0.19 0.30 0.007 0.012
K1 0.19 0.25 0.007 0.010
L 6.40 BSC 0.252 BSC M 0 8 0 8
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED
0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE –W–.
____
S
U0.15 (0.006) T
2X L/2
S
U
M
0.10 (0.004) V
S
T
L
–U–
SEATING PLANE
0.10 (0.004)
–T–
SECTION N–N
DETAIL E
J
J1
K
K1
DETAIL E
F
M
–W–
0.25 (0.010)
8
14
7
1
PIN 1 IDENT.
H
G
A
D
C
B
S
U0.15 (0.006) T
–V–
14X REFK
N
N
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