The MC74HC374A is identical in pinout to the LS374. The device
inputs are compatible with standard CMOS outputs; with pullup
resistors, they are compatible with LSTTL outputs.
Data meeting the setup time is clocked to the outputs with the rising
edge of the clock. The Output Enable input does not affect the states of
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MARKING
DIAGRAMS
the flip−flops, but when Output Enable is high, the outputs are forced
to the high−impedance state; thus, data may be stored even when the
outputs are not enabled.
The HC374A is identical in function to the HC574A which has the
input pins on the opposite side of the package from the output. This
0
1
PDIP−20
N SUFFIX
CASE 738
20
MC74HC374AN
AWLYYWWG
1
device is similar in function to the HC534A which has inverting
outputs.
Features
• Output Drive Capability: 15 LSTTL Loads
• Outputs Directly Interface to CMOS, NMOS, and TTL
• Operating Voltage Range: 2.0 to 6.0 V
20
20
SOIC−20
DW SUFFIX
1
CASE 751D
74HC374A
AWLYYWWG
1
• Low Input Current: 1.0 mA
• High Noise Immunity Characteristic of CMOS Devices
• In Compliance with the Requirements Defined by JEDEC Standard
No. 7A
• Chip Complexity: 266 FETs or 66.5 Equivalent Gates
• Pb−Free Packages are Available*
20
TSSOP−20
DT SUFFIX
1
CASE 948E
20
HC
374A
ALYWG
G
1
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*This package is inherently Pb−Free.
18 Units / Box
38 Units / Rail
1000 Tape & Reel
40 Units / Rail
2000 Tape & Reel
†
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2
Page 3
MC74HC374A
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
l
Î
Î
Î
ÎÎ
ÎÎ
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
ÎÎ
ÎÎ
ÎÎ
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
ÎÎ
ÎÎ
ÎÎ
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
ÎÎ
ÎÎ
Î
Î
Î
Î
Î
ÎÎ
ÎÎ
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
ÎÎ
ÎÎ
ÎÎ
Î
Î
Î
Î
Î
ÎÎ
ÎÎ
MAXIMUM RATINGS
Symbol
V
V
ÎÎ
ÎÎ
DC Supply Voltage (Referenced to GND)
CC
V
DC Input Voltage (Referenced to GND)
in
DC Output Voltage (Referenced to GND)
out
I
DC Input Current, per Pin
in
I
DC Output Current, per Pin
out
I
DC Supply Current, VCC and GND Pins
CC
P
Power Dissipation in Still Air,Plastic DIP†
D
ОООООООООООО
T
Storage Temperature
stg
T
Lead Temperature, 1 mm from Case for 10 Seconds
L
(Plastic DIP, SOIC, SSOP or TSSOP Package)
ОООООООООООО
Maximum ratings are those values beyond which device damage can occur. Maximum ratings
applied to the device are individual stress limit values (not normal operating conditions) and are
not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
TSSOP Package: − 6.1 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
Parameter
SOIC Package†
TSSOP Package†
Value
– 0.5 to + 7.0
– 0.5 to VCC + 0.5
– 0.5 to VCC + 0.5
± 20
± 35
± 75
750
500
ÎÎÎ
450
– 65 to + 150
260
ÎÎÎ
Unit
mW
Î
Î
V
V
V
mA
mA
mA
_C
_C
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance circuit. For proper operation, V
should be constrained to the
V
out
range GND v (V
in
or V
) v VCC.
out
in
and
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or V
CC
Unused outputs must be left open.
).
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
Vin, V
T
A
tr, t
f
ÎÎ
DC Supply Voltage (Referenced to GND)
DC Input Voltage, Output Voltage (Referenced to GND)
out
Operating Temperature, All Package Types
Input Rise and Fall TimeVCC = 2.0 V
(Figure 1)V
ОООООООООООО
Parameter
CC
V
CC
= 4.5 V
= 6.0 V
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
ÎÎ
Symbo
V
ÎÎ
ÎÎ
V
ÎÎ
ÎÎ
V
OH
ÎÎ
ÎÎ
ÎÎ
V
OL
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ОООООООО
Parameter
Minimum High−Level Input Voltage
IH
ОООООООО
ОООООООО
Maximum Low−Level Input Voltage
IL
ОООООООО
ОООООООО
Minimum High−Level Output
Voltage
ОООООООО
ОООООООО
ОООООООО
Maximum Low−Level Output
ОООООООО
Voltage
ОООООООО
ОООООООО
ОООООООО
ООООООО
Test Conditions
V
= 0.1 V or VCC – 0.1 V
out
ООООООО
|I
| v 20 mA
out
ООООООО
V
= 0.1 V or VCC – 0.1 V
out
ООООООО
|I
| v 20 mA
out
ООООООО
Vin = VIH or V
|I
| v 20 mA
out
ООООООО
Vin = VIH or V
ООООООО
Vin = VIH or V
ООООООО
|I
| v 20 mA
out
ООООООО
Vin = VIH or V
ООООООО
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Min
2.0
0
– 55
0
0
Î
0
IL
IL|Iout
|I
out
|I
out
IL
IL|Iout
|I
out
|I
out
3
Max
6.0
V
CC
+ 125
1000
500
Î
400
| v 2.4 mA
| v 6.0 mA
| v 7.8 mA
| v 2.4 mA
| v 6.0 mA
| v 7.8 mA
Unit
Î
Î
V
V
2.0
Î
3.0
4.5
Î
6.0
2.0
Î
3.0
4.5
Î
6.0
2.0
4.5
Î
6.0
3.0
Î
4.5
6.0
2.0
Î
4.5
6.0
Î
3.0
4.5
Î
6.0
_C
CC
V
V
ns
Guaranteed Limit
– 55 to
25_C
1.50
ÎÎ
2.10
3.15
ÎÎ
4.20
0.50
ÎÎ
0.90
1.35
ÎÎ
1.80
1.90
4.40
ÎÎ
5.90
2.48
ÎÎ
2.98
5.48
0.10
ÎÎ
0.10
0.10
ÎÎ
0.26
0.26
ÎÎ
0.26
v 85_C
1.50
ÎÎ
2.10
3.15
ÎÎ
4.20
0.50
ÎÎ
0.90
1.35
ÎÎ
1.80
1.90
4.40
ÎÎ
5.90
2.34
ÎÎ
3.84
5.34
0.10
ÎÎ
0.10
0.10
ÎÎ
0.33
0.33
ÎÎ
0.33
v 125_C
1.50
ÎÎ
2.10
3.15
ÎÎ
4.20
0.50
ÎÎ
0.90
1.35
ÎÎ
1.80
1.90
4.40
ÎÎ
5.90
2.20
ÎÎ
3.70
5.20
0.10
ÎÎ
0.10
0.10
ÎÎ
0.40
0.40
ÎÎ
0.40
Unit
V
V
V
V
V
V
Page 4
MC74HC374A
ÎÎ
ÎÎ
ÎÎ
Î
Î
Î
Î
Î
Î
Î
ÎÎ
ÎÎ
Î
Î
Î
Î
Î
Î
Î
ÎÎ
ÎÎ
Î
Î
l
Î
Î
Î
Î
ÎÎ
ÎÎ
ÎÎ
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
ÎÎ
ÎÎ
ÎÎ
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
ÎÎ
ÎÎ
ÎÎ
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
ÎÎ
ÎÎ
ÎÎ
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
ÎÎ
ÎÎ
ÎÎ
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
ÎÎ
ÎÎ
ÎÎ
Î
Î
Î
Î
Î
ÎÎ
ÎÎ
Î
Î
Î
Î
Î
ÎÎ
ÎÎ
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
V
V
6.0
6.0
6.0
CC
CC
– 55 to
25_C
± 0.1
± 0.5
ÎÎ
4
ÎÎ
v85_C
± 1.0
± 5.0
ÎÎ
40
ÎÎ
v 125_C
± 1.0
± 10
ÎÎ
160
ÎÎ
Unit
Unit
mA
mA
mA
V
V
Symbol
Symbol
I
in
I
OZ
ÎÎ
I
CC
ÎÎ
Parameter
Parameter
Maximum Input Leakage Current
Maximum Three−State
ОООООООО
Leakage Current
Maximum Quiescent Supply
ОООООООО
Current (per Package)
Vin = VCC or GND
Output in High−Impedance State
V
V
Vin = VCC or GND
I
Test Conditions
Test Conditions
ООООООО
= VIL or V
in
= VCC or GND
out
ООООООО
= 0 mA
out
IH
Î
Î
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book
(DL129/D).
AC ELECTRICAL CHARACTERISTICS (C
= 50 pF, Input tr = tf = 6.0 ns)
L
Guaranteed Limit
ÎÎ
ÎÎ
Symbo
f
max
ÎÎ
ÎÎ
t
PLH
t
PHL
ÎÎ
ÎÎ
t
PLZ
t
PHZ
ÎÎ
ÎÎ
t
PLZ
t
PHZ
ÎÎ
ÎÎ
t
TLH
t
THL
ÎÎ
ÎÎ
C
ÎÎ
C
out
ÎÎ
ОООООООООООООООО
ОООООООООООООООО
Parameter
Maximum Clock Frequency (50% Duty Cycle)
ОООООООООООООООО
ОООООООООООООООО
Maximum Propagation Delay, Input Clock to Q
(Figures 1 and 5)
ОООООООООООООООО
ОООООООООООООООО
Maximum Propagation Delay, Output Enable to Q
(Figures 3 and 6)
ОООООООООООООООО
ОООООООООООООООО
Maximum Propagation Delay, Output Enable to Q
(Figures 3 and 6)
ОООООООООООООООО
ОООООООООООООООО
Maximum Output Transition Time, Any Output
(Figures 1 and 5)
ОООООООООООООООО
ОООООООООООООООО
Maximum Input Capacitance
in
ОООООООООООООООО
Maximum Three−State Output Capacitance
ОООООООООООООООО
(Output in High−Impedance State)
Î
V
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
ÎÎÎÎ
ÎÎÎÎ
V
2.0
3.0
4.5
6.0
2.0
3.0
4.5
6.0
2.0
3.0
4.5
6.0
2.0
3.0
4.5
6.0
2.0
3.0
4.5
6.0
CC
– 55 to
25_C
ÎÎ
6
15
ÎÎ
30
35
ÎÎ
125
80
ÎÎ
25
21
ÎÎ
150
100
ÎÎ
30
26
ÎÎ
150
100
ÎÎ
30
26
ÎÎ
75
27
ÎÎ
15
13
ÎÎ
10
15
v 85_C
ÎÎ
5
10
ÎÎ
24
28
ÎÎ
155
110
ÎÎ
31
26
ÎÎ
190
125
ÎÎ
38
33
ÎÎ
190
125
ÎÎ
38
33
ÎÎ
95
32
ÎÎ
19
16
ÎÎ
10
ÎÎ
15
ÎÎ
v 125_C
ÎÎ
4
8
ÎÎ
20
24
ÎÎ
190
130
ÎÎ
38
32
ÎÎ
225
150
ÎÎ
45
38
ÎÎ
225
150
ÎÎ
45
38
ÎÎ
110
36
ÎÎ
22
19
ÎÎ
10
ÎÎ
15
ÎÎ
Unit
MHz
ns
ns
ns
ns
pF
pF
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).
C
Power Dissipation Capacitance (Per Enabled Output)*
PD
*Used to determine the no−load dynamic power consumption: PD = CPD V
ON Semiconductor High−Speed CMOS Data Book (DL129/D).
CC
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4
Typical @ 25°C, VCC = 5.0 V
34
2
f + ICC VCC. For load considerations, see Chapter 2 of the
pF
Page 5
MC74HC374A
Î
Î
l
Î
Î
Î
Î
Î
Î
ÎÎ
ÎÎ
ÎÎ
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
ÎÎ
ÎÎ
ÎÎ
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
ÎÎ
ÎÎ
ÎÎ
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
ÎÎ
ÎÎ
ÎÎ
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
ÎÎ
ÎÎ
ÎÎ
TIMING REQUIREMENTS (C
ÎÎ
ÎÎ
Symbo
t
su
ÎÎ
ÎÎ
t
ÎÎ
ÎÎ
t
ÎÎ
ÎÎ
tr, t
ÎÎ
ÎÎ
ООООООООООО
ООООООООООО
Minimum Setup Time, Data to Clock
ООООООООООО
ООООООООООО
Minimum Hold Time, Clock to Data
h
ООООООООООО
ООООООООООО
Minimum Pulse Width, Clock
w
ООООООООООО
ООООООООООО
Maximum Input Rise and Fall Times
f
ООООООООООО
ООООООООООО
= 50 pF, Input tr = tf = 6.0 ns)
L
Parameter
SWITCHING WAVEFORMS
Î
Î
Figure
3
Î
Î
3
Î
Î
1
Î
Î
1
Î
Î
Î
V
Volts
Î
2.0
3.0
Î
4.5
6.0
Î
2.0
3.0
Î
4.5
6.0
Î
2.0
3.0
Î
4.5
6.0
Î
2.0
3.0
Î
4.5
6.0
Î
CC
– 55 to 25_C
Min
Max
50
40
Î
Î
10
Î
9
Î
5.0
5.0
Î
Î
5.0
5.0
Î
Î
60
23
Î
Î
12
10
Î
Î
1000
800
Î
Î
Î
500
400
Î
Guaranteed Limit
v 85_C
Min
Max
65
50
Î
Î
13
11
Î
Î
5.0
5 0
Î
Î
5.0
5.0
Î
Î
75
27
Î
Î
15
13
Î
Î
1000
800
Î
Î
Î
500
400
Î
v 125_C
Min
75
60
Î
15
13
Î
5.0
5.0
Î
5.0
5.0
Î
90
32
Î
18
15
Î
Î
Î
Max
Î
Î
Î
Î
Î
Î
1000
800
Î
500
400
Î
Unit
ns
ns
ns
ns
CLOCK
t
r
90%
50%
10%
t
W
t
90%
Q
50%
10%
1/f
max
PLH
t
TLH
Figure 1.
t
f
V
CC
GND
OUTPUT
ENABLE
50%
t
PZL
t
PLZ
V
CC
GND
HIGH
IMPEDANCE
50%
50%
t
PZHtPHZ
10%
90%
V
OL
V
OH
HIGH
IMPEDANCE
t
PHL
t
Q
Q
THL
Figure 2.
VALID
V
CC
DATA
50%
GND
CLOCK
t
su
50%
t
h
V
CC
GND
Figure 3.
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5
Page 6
MC74HC374A
TEST CIRCUITS
OUTPUT
DEVICE
UNDER
TEST
*Includes all probe and jig capacitance
Figure 4.
Clock
Output
Enable
D0
3
DQ
11
1
D1
C
2
Q0
TEST POINT
4
DQ
C
CL*
Q1
D2
5
7
DQ
TEST POINT
CONNECT TO VCC WHEN
TESTING t
CONNECT TO GND WHEN
TESTING t
PLZ
PHZ
AND t
AND t
PZL
PZH
.
.
DEVICE
UNDER
TEST
OUTPUT
*Includes all probe and jig capacitance
1 kW
CL*
Figure 5.
D3
8
DQ
C
6
Q2
D4
13
DQ
C
9
Q3
D5
14
DQ
C
12
Q4
D6
17
DQ
C
15
Q5
D7
18
DQ
C
Q6
C
16
19
Q7
Figure 6. Expanded Logic Diagram
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6
Page 7
MC74HC374A
SOIC−20
PACKAGE DIMENSIONS
PDIP−20
N SUFFIX
PLASTIC DIP PACKAGE
CASE 738−03
ISSUE E
−T−
SEATING
PLANE
−A−
20
11
B
1
10
C
L
K
M
E
FG
N
D 20 PL
0.25 (0.010)T
J
20 PL
0.25 (0.010)T
M
M
A
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DIMENSIONS D AND E DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
5. DIMENSION B DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE PROTRUSION
SHALL BE 0.13 TOTAL IN EXCESS OF B
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
MILLIMETERS
DIM MINMAX
A2.352.65
A10.100.25
B0.350.49
C0.230.32
D 12.65 12.95
E7.407.60
e1.27 BSC
H 10.05 10.55
h0.250.75
L0.500.90
q0 7
__
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7
Page 8
MC74HC374A
TSSOP−20
PACKAGE DIMENSIONS
DT SUFFIX
CASE 948E−02
ISSUE B
20X REFK
S
U0.15 (0.006) T
0.10 (0.004)V
M
S
U
T
S
K
2X
L/2
L
PIN 1
IDENT
110
1120
B
JJ1
−U−
N
S
U0.15 (0.006) T
A
K1
SECTION N−N
0.25 (0.010)
M
−V−
N
F
DETAIL E
C
G
H
DETAIL E
0.100 (0.004)
SEATING
−T−
PLANE
D
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION:
MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE
MOLD FLASH, PROTRUSIONS OR GATE
BURRS. MOLD FLASH OR GATE BURRS
SHALL NOT EXCEED 0.15 (0.006) PER
SIDE.
4. DIMENSION B DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION
SHALL NOT EXCEED 0.25 (0.010) PER
SIDE.
5. DIMENSION K DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.08
(0.003) TOTAL IN EXCESS OF THE K
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. TERMINAL NUMBERS ARE SHOWN
FOR REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE
DETERMINED AT DATUM PLANE −W−.
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
1
3. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH OR PROTRUSIONS AND ARE MEASURED
AT THE PARTING LINE. MOLD FLASH OR
PROTRUSIONS SHALL NOT EXCEED 0.15 (0.006)
PER SIDE.
4. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
5. THE LEAD WIDTH DIMENSION (b) DOES NOT
INCLUDE DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.08 (0.003)
TOTAL IN EXCESS OF THE LEAD WIDTH
DIMENSION AT MAXIMUM MATERIAL CONDITION.
DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OR THE FOOT. MINIMUM SPACE
BETWEEN PROTRUSIONS AND ADJACENT LEAD
c
TO BE 0.46 ( 0.018).
MILLIMETERS
DIM MINMAXMINMAX
−−−2.05−−− 0.081
A
A
0.050.20 0.002 0.008
1
0.350.50 0.014 0.020
b
0.180.27 0.007 0.011
c
12.35 12.80 0.486 0.504
D
5.105.45 0.201 0.215
E
1.27 BSC0.050 BSC
e
H
7.408.20 0.291 0.323
E
0.500.85 0.020 0.033
L
L
1.101.50 0.043 0.059
E
M
Q
1
Z
10
0
_
0.700.90 0.028 0.035
−−−0.81−−− 0.032
INCHES
10
0
_
_
_
http://onsemi.com
9
Page 10
MC74HC374A
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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MC74HC373A/D
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