Datasheet MC74HC373ADT, MC74HC373ADTEL, MC74HC373ADTR2, MC74HC373AH, MC74HC373AFR1 Datasheet (MOTOROLA)

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Page 1
Semiconductor Components Industries, LLC, 2000
March, 2000 – Rev. 8
1 Publication Order Number:
MC74HC373A/D
MC74HC373A
Octal 3-State Non-Inverting Transparent Latch
High–Performance Silicon–Gate CMOS
These latches appear transparent to data (i.e., the outputs change asynchronously) when Latch Enable is high. When Latch Enable goes low, data meeting the setup and hold time becomes latched.
The Output Enable input does not affect the state of the latches, but when Output Enable is high, all device outputs are forced to the high–impedance state. Thus, data may be latched even when the outputs are not enabled.
The HC373A is identical in function to the HC573A which has the data inputs on the opposite side of the package from the outputs to facilitate PC board layout.
The HC373A is the non–inverting version of the HC533A.
Output Drive Capability: 15 LSTTL Loads
Outputs Directly Interface to CMOS, NMOS and TTL
Operating Voltage Range: 2.0 to 6.0 V
Low Input Current: 1.0 µA
High Noise Immunity Characteristic of CMOS Devices
In Compliance with the Requirements Defined by JEDEC Standard
No. 7A
Chip Complexity: 186 FETs or 46.5 Equivalent Gates
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MARKING
DIAGRAMS
1
20
A = Assembly Location WL = Wafer Lot YY = Year WW = Work Week
SOIC WIDE–20
DW SUFFIX CASE 751D
HC373A
AWLYYWW
PDIP–20 N SUFFIX CASE 738
1
20
MC74HC373AN
AWLYYWW
TSSOP–20 DT SUFFIX
CASE 948G
1
20
1
20
1
20
Device Package Shipping
ORDERING INFORMATION
MC74HC373AN PDIP–20 1440 / Box MC74HC373ADW SOIC–WIDE
38 / Rail MC74HC373ADWR2 SOIC–WIDE 1000 / Reel MC74HC373ADT TSSOP–20 75 / Rail MC74HC373ADTR2 TSSOP–20
2500 / Reel
HC
373A
ALYW
1
20
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2
LOGIC DIAGRAM
DATA
INPUTS
D0 D1 D2 D3 D4 D5 D6 D7
18
17
14
13
8
7
4
3
1
OUTPUT ENABLE
19
Q0 Q1 Q2 Q3 Q4 Q5 Q6 Q7
16
15
12
9
6
5
2
PIN 20 = V
CC
PIN 10 = GND
NONINVERTING
OUTPUTS
11
LATCH ENABLE
FUNCTION TABLE
Inputs Output
Output Latch Enable Enable D Q
LHHH LHLL L L X No Change HXXZ
X = Don’t Care Z = High Impedance
PIN ASSIGNMENT
Q2
D1
D0
Q0
OUTPUT
ENABLE
GND
Q3
D3
D2
Q1 5
4
3
2
1
10
9
8
7
6
14
15
16
17
18
19
20
11
12
13
Q6
D6
D7
Q7
V
CC
LATCH ENABLE
Q4
D4
D5
Q5
Design Criteria
Value
Units
Internal Gate Count*
46.5
ea
Internal Gate Propagation Delay
1.5
ns
Internal Gate Power Dissipation
5.0
µW
Speed Power Product
0.0075
pJ
*Equivalent to a two–input NAND gate.
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3
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
V
CC
DC Supply Voltage (Referenced to GND)
– 0.5 to + 7.0
V
V
in
DC Input Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
V
out
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
I
in
DC Input Current, per Pin
± 20
mA
I
out
DC Output Current, per Pin
± 35
mA
I
CC
DC Supply Current, VCC and GND Pins
± 75
mA
ÎÎ
Î
P
D
ОООООООООООО
Î
Power Dissipation in Still Air, Plastic DIP†
SOIC Package†
TSSOP Package†
ÎÎÎ
Î
750 500 450
Î
Î
mW
T
stg
Storage Temperature
– 65 to + 150
_
C
ÎÎ
Î
T
L
ОООООООООООО
Î
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP, SOIC, SSOP or TSSOP Package)
ÎÎÎ
Î
260
Î
Î
_
C
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C TSSOP Package: – 6.1 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
ÎÎ
Max
Unit
V
CC
DC Supply Voltage (Referenced to GND)
2.0
ÎÎ
6.0
V
Vin, V
out
DC Input Voltage, Output Voltage (Referenced to GND)
0
ÎÎ
V
CC
V
T
A
Operating Temperature, All Package Types
– 55
ÎÎ
+ 125
_
C
ÎÎ
Î
tr, t
f
ООООООООООООО
Î
Input Rise and Fall Time VCC = 2.0 V
(Figure 1) VCC = 4.5 V
VCC = 6.0 V
Î
Î
0 0 0
ÎÎ
ÎÎ
1000
500 400
Î
Î
ns
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
ÎÎ
Î
Symbol
ООООООО
Î
Parameter
ООООООО
Î
Test Conditions
ÎÎ
Î
V
CC V
ÎÎ
Î
– 55 to
25_C
ÎÎÎ
Î
Î
Î
v
85_C
ÎÎ
Î
v
125_C
Î
Î
Unit
ÎÎ
Î
ÎÎ
Î
V
IH
ООООООО
Î
ООООООО
Î
Minimum High–Level Input Voltage
ООООООО
Î
ООООООО
Î
V
out
= VCC – 0.1 V
|I
out
| v 20 µA
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
1.5
2.1
3.15
4.2
ÎÎÎ
Î
Î
Î
Î
Î
Î
1.5
2.1
3.15
4.2
ÎÎ
Î
ÎÎ
Î
1.5
2.1
3.15
4.2
Î
Î
Î
Î
V
ÎÎ
Î
ÎÎ
Î
V
IL
ООООООО
Î
ООООООО
Î
Maximum Low–Level Input Voltage
ООООООО
Î
ООООООО
Î
V
out
= 0.1 V
|I
out
| v 20 µA
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
0.5
0.9
1.35
1.8
ÎÎÎ
Î
Î
Î
Î
Î
Î
0.5
0.9
1.35
1.8
ÎÎ
Î
ÎÎ
Î
0.5
0.9
1.35
1.8
Î
Î
Î
Î
V
ÎÎ
Î
V
OH
ООООООО
Î
Minimum High–Level Output Voltage
ООООООО
Î
Vin = V
IH
|I
out
| v 20 µA
ÎÎ
Î
2.0
4.5
6.0
ÎÎ
Î
1.9
4.4
5.9
ÎÎÎ
Î
Î
Î
1.9
4.4
5.9
ÎÎ
Î
1.9
4.4
5.9
Î
Î
V
ÎÎÎОООООООÎООООООО
Î
Vin = V
IH
|I
out
| v 2.4 mA
|I
out
| v 6.0 mA
|I
out
| v 7.8 mA
ÎÎ
Î
3.0
4.5
6.0
ÎÎ
Î
2.48
3.98
5.48
ÎÎÎ
Î
Î
Î
2.34
3.84
5.34
ÎÎ
Î
2.2
3.7
5.2
Î
Î
ÎÎ
Î
V
OL
ООООООО
Î
Maximum Low–Level Output Voltage
ООООООО
Î
Vin = V
IL
|I
out
| v 20 µA
ÎÎ
Î
2.0
4.5
6.0
ÎÎ
Î
0.1
0.1
0.1
ÎÎÎ
Î
Î
Î
0.1
0.1
0.1
ÎÎ
Î
0.1
0.1
0.1
Î
Î
V
ÎÎÎОООООООÎООООООО
Î
Vin = V
IL
|I
out
| v 2.4 mA
|I
out
| v 6.0 mA
|I
out
| v 7.8 mA
ÎÎ
Î
3.0
4.5
6.0
ÎÎ
Î
0.26
0.26
0.26
ÎÎÎ
Î
Î
Î
0.33
0.33
0.33
ÎÎ
Î
0.4
0.4
0.4
Î
Î
This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high–impedance cir­cuit. For proper operation, Vin and V
out
should be constrained to the
range GND v (Vin or V
out
) v VCC.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open.
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4
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Unit
v
125_C
ÎÎÎ
v
85_C
– 55 to
25_C
V
CC
V
Test Conditions
Parameter
Symbol
ÎÎ
Î
I
in
ООООООО
Î
Maximum Input Leakage Current
ООООООО
Î
Vin = VCC or GND
ÎÎ
Î
6.0
ÎÎ
Î
± 0.1
ÎÎÎ
Î
Î
Î
± 1.0
ÎÎ
Î
± 1.0
Î
Î
µA
ÎÎ
Î
I
OZ
ООООООО
Î
Maximum Three–State Leakage Current
ООООООО
Î
Output in High–Impedance State Vin = VIL or V
IH
V
out
= VCC or GND
ÎÎ
Î
6.0
ÎÎ
Î
± 0.5
ÎÎÎ
Î
Î
Î
± 5.0
ÎÎ
Î
± 10
Î
Î
µA
ÎÎ
Î
I
CC
ООООООО
Î
Maximum Quiescent Supply Current (per Package)
ООООООО
Î
Vin = VCC or GND I
out
= 0 µA
ÎÎ
Î
6.0
ÎÎ
Î
4.0
ÎÎÎ
Î
Î
Î
40
ÎÎ
Î
160
Î
Î
µA
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book
(DL129/D).
AC ELECTRICAL CHARACTERISTICS (C
L
= 50 pF, Input tr = tf = 6.0 ns)
Guaranteed Limit
Symbol
Parameter
V
CC V
– 55 to
25_C
ÎÎÎ
v
85_Cv 125_C
Unit
ÎÎÎ
Î
ÎÎÎ
Î
t
PLH
t
PHL
ОООООООООООООО
Î
ОООООООООООООО
Î
Maximum Propagation Delay, Input D to Q
(Figures 1 and 5)
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
125
80 25 21
ÎÎÎ
Î
Î
Î
Î
Î
Î
155 110
31 26
ÎÎ
Î
ÎÎ
Î
190 130
38 32
Î
Î
Î
Î
ns
ÎÎÎ
Î
ÎÎÎ
Î
t
PLH
t
PHL
ОООООООООООООО
Î
ОООООООООООООО
Î
Maximum Propagation Delay, Latch Enable to Q
(Figures 2 and 5)
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
140
90 28 24
ÎÎÎ
Î
Î
Î
Î
Î
Î
175 120
35 30
ÎÎ
Î
ÎÎ
Î
210 140
42 36
Î
Î
Î
Î
ns
ÎÎÎ
Î
ÎÎÎ
Î
t
PLZ
t
PHZ
ОООООООООООООО
Î
ОООООООООООООО
Î
Maximum Propagation Delay, Output Enable to Q
(Figures 3 and 6)
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
150 100
30 26
ÎÎÎ
Î
Î
Î
Î
Î
Î
190 125
38 33
ÎÎ
Î
ÎÎ
Î
225 150
45 38
Î
Î
Î
Î
ns
ÎÎÎ
Î
ÎÎÎ
Î
t
PZL
t
PZH
ОООООООООООООО
Î
ОООООООООООООО
Î
Maximum Propagation Delay, Output Enable to Q
(Figures 3 and 6)
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
150 100
30 26
ÎÎÎ
Î
Î
Î
Î
Î
Î
190 125
38 33
ÎÎ
Î
ÎÎ
Î
225 150
45 38
Î
Î
Î
Î
ns
ÎÎÎ
Î
ÎÎÎ
Î
t
TLH
t
THL
ОООООООООООООО
Î
ОООООООООООООО
Î
Maximum Output Transition Time, Any Output
(Figures 1 and 5)
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
60 23 12 10
ÎÎÎ
Î
Î
Î
Î
Î
Î
75 27 15 13
ÎÎ
Î
ÎÎ
Î
90 32 18 15
Î
Î
Î
Î
ns
C
in
Maximum Input Capacitance
10
ÎÎÎ
10
10
pF
ÎÎÎ
Î
C
out
ОООООООООООООО
Î
Maximum Three–State Output Capacitance (Output in High–Impedance State)
ÎÎÎÎÎ
Î
15
ÎÎÎ
Î
Î
Î
15
ÎÎ
Î
15
Î
Î
pF
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High–Speed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
C
PD
Power Dissipation Capacitance (Per Enabled Output)*
36
pF
*Used to determine the no–load dynamic power consumption: PD = CPD V
CC
2
f + ICC VCC. For load considerations, see Chapter 2 of the
ON Semiconductor High–Speed CMOS Data Book (DL129/D).
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5
TIMING REQUIREMENTS (C
L
= 50 pF, Input tr = tf = 6.0 ns)
Guaranteed Limit
ÎÎ
– 55 to 25_C
v
85_C
v
125_C
ÎÎ
Symbol
Parameter
Fig.
V
CC
Volts
Min
Max
Min
Max
Min
Max
ÎÎ
Unit
ÎÎ
Î
ÎÎ
Î
t
su
ООООООООООО
Î
ООООООООООО
Î
Minimum Setup Time, Input D to Latch Enable
Î
Î
Î
Î
4
Î
Î
Î
Î
2.0
3.0
4.5
6.0
Î
Î
Î
Î
25 20
5.0
5.0
Î
Î
Î
Î
Î
Î
Î
Î
30 25
6.0
6.0
Î
Î
Î
Î
Î
Î
Î
Î
40 30
8.0
7.0
Î
Î
Î
Î
ÎÎ
ÎÎ
ÎÎ
ns
ÎÎ
Î
ÎÎ
Î
t
h
ООООООООООО
Î
ООООООООООО
Î
Minimum Hold Time, Latch Enable to Input D
Î
Î
Î
Î
4
Î
Î
Î
Î
2.0
3.0
4.5
6.0
Î
Î
Î
Î
5.0
5.0
5.0
5.0
Î
Î
Î
Î
Î
Î
Î
Î
5.0
5.0 5 0
5.0
Î
Î
Î
Î
Î
Î
Î
Î
5.0
5.0
5.0
5.0
Î
Î
Î
Î
ÎÎ
ÎÎ
ÎÎ
ns
ÎÎ
Î
ÎÎ
Î
t
w
ООООООООООО
Î
ООООООООООО
Î
Minimum Pulse Width, Latch Enable
Î
Î
Î
Î
2
Î
Î
Î
Î
2.0
3.0
4.5
6.0
Î
Î
Î
Î
60 23 12 10
Î
Î
Î
Î
Î
Î
Î
Î
75 27 15 13
Î
Î
Î
Î
Î
Î
Î
Î
90 32 18 15
Î
Î
Î
Î
ÎÎ
ÎÎ
ÎÎ
ns
ÎÎ
Î
ÎÎ
Î
tr, t
f
ООООООООООО
Î
ООООООООООО
Î
Maximum Input Rise and Fall Times
Î
Î
Î
Î
1
Î
Î
Î
Î
2.0
3.0
4.5
6.0
Î
Î
Î
Î
Î
Î
Î
Î
1000
800 500 400
Î
Î
Î
Î
Î
Î
Î
Î
1000
800 500 400
Î
Î
Î
Î
Î
Î
Î
Î
1000
800 500 400
ÎÎ
ÎÎ
ÎÎ
ns
SWITCHING W AVEFORMS
Figure 1. Figure 2.
V
CC
GND
t
f
t
r
INPUT D
Q
10%
50%
90%
10%
50%
90%
t
TLH
t
PLH
t
PHL
t
THL
V
CC
GND
50%
LATCH ENABLE
t
PLH
t
PHL
Q
t
w
50%
Figure 3. Figure 4.
50%
50%
1.3 V
Q
t
PZL
t
PLZ
t
PZHtPHZ
10%
90%
V
CC
GND HIGH
IMPEDANCE V
OL
V
OH
HIGH IMPEDANCE
Q
OUTPUT ENABLE
50%
INPUT D
LATCH ENABLE
V
CC
V
CC
GND
GND
VALID
t
h
t
su
50%
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6
TEST CIRCUITS
*Includes all probe and jig capacitance
CL*
TEST POINT
DEVICE
UNDER
TEST
OUTPUT
Figure 5. Figure 6.
*Includes all probe and jig capacitance
CL*
TEST POINT
DEVICE UNDER
TEST
OUTPUT
CONNECT TO VCC WHEN TESTING t
PLZ
AND t
PZL
. CONNECT TO GND WHEN TESTING t
PHZ
AND t
PZH
.
1 k
EXPANDED LOGIC DIAGRAM
D0
3
DQ
LE
2
Q0
11
1
D1
4
DQ
LE
5
Q1
D2
7
DQ
LE
6
Q2
D3
8
DQ
LE
9
Q3
D4
13
DQ
LE
12
Q4
D5
14
DQ
LE
15
Q5
D6
17
DQ
LE
16
Q6
D7
18
DQ
LE
19
Q7
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7
P ACKAGE DIMENSIONS
SO–20
DW SUFFIX
CASE 751D–05
ISSUE F
PDIP–20
N SUFFIX
PLASTIC DIP PACKAGE
CASE 738–03
ISSUE E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD FLASH.
M
L
J
20 PL
M
B
M
0.25 (0.010) T
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 25.66 27.171.010 1.070 B 6.10 6.600.240 0.260 C 3.81 4.570.150 0.180 D 0.39 0.550.015 0.022
G 2.54 BSC0.100 BSC J 0.21 0.380.008 0.015 K 2.80 3.550.110 0.140 L 7.62 BSC0.300 BSC M 0 15 0 15 N 0.51 1.010.020 0.040
____
E
1.27 1.770.050 0.070
1
11
10
20
–A–
SEATING PLANE
K
N
FG
D
20 PL
–T–
M
A
M
0.25 (0.010) T
E
B
C
F
1.27 BSC0.050 BSC
20
1
11
10
B20X
H10X
C
L
18X
A1
A
SEATING PLANE
q
h X 45
_
E
D
M
0.25
M
B
M
0.25
SAS
B
T
e
T
B
A
DIM MIN MAX
MILLIMETERS
A 2.35 2.65
A1 0.10 0.25
B 0.35 0.49 C 0.23 0.32 D 12.65 12.95 E 7.40 7.60 e 1.27 BSC H 10.05 10.55 h 0.25 0.75 L 0.50 0.90
q
0 7
NOTES:
1. DIMENSIONS ARE IN MILLIMETERS.
2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994.
3. DIMENSIONS D AND E DO NOT INCLUDE MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
5. DIMENSION B DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE PROTRUSION SHALL BE 0.13 TOTAL IN EXCESS OF B DIMENSION AT MAXIMUM MATERIAL CONDITION.
__
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8
P ACKAGE DIMENSIONS
TSSOP–20 DT SUFFIX
CASE 948E–02
ISSUE A
DIMAMIN MAX MIN MAX
INCHES
6.60 0.260
MILLIMETERS
B 4.30 4.50 0.169 0.177 C 1.20 0.047 D 0.05 0.15 0.002 0.006 F 0.50 0.75 0.020 0.030 G 0.65 BSC 0.026 BSC H 0.27 0.37 0.011 0.015 J 0.09 0.20 0.004 0.008
J1 0.09 0.16 0.004 0.006
K 0.19 0.30 0.007 0.012
K1 0.19 0.25 0.007 0.010
L 6.40 BSC 0.252 BSC
M 0 8 0 8
____
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED
0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE –W–.
110
1120
PIN 1 IDENT
A
B
–T–
0.100 (0.004)
C
D
G
H
SECTION N–N
K
K1
JJ1
N
N
M
F
–W–
SEATING PLANE
–V–
–U–
S
U
M
0.10 (0.004) V
S
T
20X REFK
L
L/2
2X
S
U0.15 (0.006) T
DETAIL E
0.25 (0.010)
DETAIL E
6.40 0.252 ––– –––
S
U0.15 (0.006) T
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