Datasheet MC74HC32A Datasheet (ON Semiconductor)

Page 1
MC74HC32A
Quad 2−Input OR Gate
High−Performance Silicon−Gate CMOS
The MC74HC32A is identical in pinout to the LS32. The device inputs are compatible with Standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs.
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Features
Output Drive Capability: 10 LSTTL Loads
Outputs Directly Interface to CMOS, NMOS and TTL
Operating Voltage Range: 2.0 to 6.0 V
Low Input Current: 1A
High Noise Immunity Characteristic of CMOS Devices
In Compliance With the JEDEC Standard No. 7A Requirements
Chip Complexity: 48 FETs or 12 Equivalent Gates
Pb−Free Packages are Available*
MARKING
DIAGRAMS
14
PDIP−14
4
1
14
1
14
1
N SUFFIX
CASE 646
SOIC−14
D SUFFIX
CASE 751A
TSSOP−14 DT SUFFIX
CASE 948G
MC74HC32AN
AWLYYWWG
1
14
1
14
1
14
HC32AG
AWLYWW
HC
32A
ALYW
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2005
May, 2005 − Rev. 8
1 Publication Order Number:
14
SOEIAJ−14
F SUFFIX
1
A = Assembly Location L, WL = Wafer Lot Y, YY = Year W, WW = Work Week G = Pb−Free Package = Pb−Free Package (Note: Microdot may be in either location)
CASE 965
74HC32A
ALYWG
1
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.
MC74HC32A/D
Page 2
MC74HC32A
Pinout: 14−Lead Packages (Top View)
B4 A4 Y4 B3 A3 Y3
V
CC
1314 12 11 10 9 8
21 34567
A1 B1 Y1 A2 B2 Y2 GND
FUNCTION TABLE
Inputs Output
AB
L L H H
L
H
L
H
Y
L H H H
A1
B1
A2
B2
A3
B3
A4
B4
LOGIC DIAGRAM
1
2
4
5
9
10
12
13
PIN 14 = V PIN 7 = GND
3
Y1
6
Y2
Y = A+B
8
Y3
11
Y4
CC
ORDERING INFORMATION
Device Package Shipping
MC74HC32AN PDIP−14 500 Units / Rail MC74HC32ANG PDIP−14
(Pb−Free) MC74HC32AD SOIC−14 55 Units / Rail MC74HC32ADG SOIC−14
(Pb−Free) MC74HC32ADR2 SOIC−14 2500 Units / Reel MC74HC32ADR2G SOIC−14
(Pb−Free) MC74HC32ADTR2 TSSOP−14* 2500 Units / Reel MC74HC32ADTR2G TSSOP−14* 2500 Units / Reel MC74HC32AFEL SOEIAJ−14 2000 Units / Reel MC74HC32AFELG SOEIAJ−14
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*This package is inherently Pb−Free.
500 Units / Rail
55 Units / Rail
2500 Units / Reel
2000 Units / Reel
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Page 3
MC74HC32A
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
MAXIMUM RATINGS
Symbol
V
V
ÎÎ
ÎÎ
DC Supply Voltage (Referenced to GND)
CC
V
DC Input Voltage (Referenced to GND)
in
DC Output Voltage (Referenced to GND)
out
I
DC Input Current, per Pin
in
I
DC Output Current, per Pin
out
I
DC Supply Current, VCC and GND Pins
CC
P
Power Dissipation in Still Air, Plastic DIP†
D
ОООООООООООО
T
Storage Temperature
stg
T
Lead Temperature, 1 mm from Case for 10 Seconds
L
ОООООООООООО
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. †Derating — Plastic DIP: – 10 mW/C from 65 to 125C
SOIC Package: – 7 mW/C from 65 to 125C TSSOP Package: − 6.1 mW/C from 65 to 125C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
Parameter
SOIC Package†
TSSOP Package†
Plastic DIP, SOIC or TSSOP Package
Value
– 0.5 to + 7.0
– 0.5 to VCC + 0.5 – 0.5 to VCC + 0.5
± 20 ± 25 ± 50
750 500
ÎÎÎ
450
– 65 to + 150
ÎÎÎ
260
Unit
mW
Î
Î
V V
V mA mA mA
CC
This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high−impedance cir­cuit. For proper operation, V V
should be constrained to the
out
range GND (V
in
or V
) VCC.
out
in
and
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or V
CC
Unused outputs must be left open.
).
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
Vin, V
ÎÎ
T
A
tr, t
f
ÎÎ
DC Supply Voltage (Referenced to GND) DC Input Voltage, Output Voltage (Referenced to
out
ОООООООООООО
GND) Operating Temperature, All Package Types Input Rise and Fall Time VCC = 2.0 V
(Figure 1) V
ОООООООООООО
Parameter
V
= 4.5 V
CC
= 6.0 V
CC
Min
2.0 0
Î
– 55
0 0
Î
0
Max
6.0
V
CC
Î
+ 125
1000
500
Î
400
Unit
Î
Î
V V
C
ns
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MC74HC32A
V
V
DC CHARACTERISTICS (Voltages Referenced to GND)
Symbol Parameter Condition
V
Minimum High−Level Input Voltage V
IH
= 0.1V or VCC −0.1V
out
| 20A
|I
out
CC
V
2.0
3.0
4.5
6.0
V
Maximum Low−Level Input Voltage V
IL
= 0.1V or VCC − 0.1V
out
| 20A
|I
out
2.0
3.0
4.5
6.0
V
Minimum High−Level Output
OH
Voltage
Vin = VIH or V |I
| 20A
out
IL
2.0
4.5
6.0
Vin =VIH or V
V
Maximum Low−Level Output
OL
Voltage
Vin = VIH or V |I
| 20A
out
|I
out
|I
out
|I
out
| 2.4mA | 4.0mA | 5.2mA
IL
IL
3.0
4.5
6.0
2.0
4.5
6.0
Vin = VIH or V
I
I
CC
Maximum Input Leakage Current Vin = VCC or GND 6.0 ±0.1 ±1.0 ±1.0 A
in
Maximum Quiescent Supply Current (per Package)
Vin = VCC or GND I
= 0A
out
|I
out
|I
out
|I
out
| 2.4mA | 4.0mA | 5.2mA
IL
3.0
4.5
6.0
6.0 1.0 10 40 A
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor H igh−Speed CMOS D ata B ook (DL129/D).
Guaranteed Limit
−55 to 25°C ≤85°C ≤125°C Unit
1.50
2.10
3.15
4.20
0.50
0.90
1.35
1.80
1.9
4.4
5.9
2.48
3.98
5.48
0.1
0.1
0.1
0.26
0.26
0.26
1.50
2.10
3.15
4.20
0.50
0.90
1.35
1.80
1.9
4.4
5.9
2.34
3.84
5.34
0.1
0.1
0.1
0.33
0.33
0.33
1.50
2.10
3.15
4.20
0.50
0.90
1.35
1.80
1.9
4.4
5.9
2.20
3.70
5.20
0.1
0.1
0.1
0.40
0.40
0.40
V
V
V
V
AC CHARACTERISTICS (C
Symbol Parameter
t
,
t
t
t
PLH
PHL
TLH
THL
C
Maximum Propagation Delay, Input A or B to Output Y (Figures 1 and 2)
,
Maximum Output Transition Time, Any Output (Figures 1 and 2)
Maximum Input Capacitance 10 10 10 pF
in
= 50pF, Input tr = tf = 6ns)
L
CC
−55 to 25°C ≤85°C ≤125°C Unit
V
2.0
3.0
4.5
6.0
2.0
3.0
4.5
6.0
Guaranteed Limit
75 30 15 13
75 27 15 13
95 40 19 16
95 32 19 16
110
55 22 19
110
36 22 19
ns
ns
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V, VEE = 0 V
C
Power Dissipation Capacitance (Per Buffer)*
PD
*Used to determine the no−load dynamic power consumption: PD = CPD V
2
f + ICC VCC. For load considerations, see Chapter 2 of t h e
CC
20
pF
ON Semiconductor High−Speed CMOS Data Book (DL129/D).
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Page 5
INPUT
A OR B
OUTPUT Y
t
PLH
MC74HC32A
t
r
90%
50%
10%
90%
50%
10%
t
f
V
CC
GND
t
PHL
t
TLH
Figure 1. Switching Waveforms
TEST
POINT
OUTPUT
DEVICE
UNDER
TEST
CL*
*Includes all probe and jig capacitance
Figure 2. Test Circuit
t
THL
A
Y
B
Figure 3. Expanded Logic Diagram
(1/4 of the Device)
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Page 6
−T−
SEATING PLANE
14 8
17
N
HG
MC74HC32A
PACKAGE DIMENSIONS
PDIP−14
N SUFFIX
CASE 646−06
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
B
A
F
L
C
D
14 PL
0.13 (0.005)
K
J
M
M
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD FLASH.
5. ROUNDED CORNERS OPTIONAL.
DIM MIN MAX MIN MAX
A 0.715 0.770 18.16 18.80 B 0.240 0.260 6.10 6.60 C 0.145 0.185 3.69 4.69 D 0.015 0.021 0.38 0.53 F 0.040 0.070 1.02 1.78 G 0.100 BSC 2.54 BSC H 0.052 0.095 1.32 2.41 J 0.008 0.015 0.20 0.38 K 0.115 0.135 2.92 3.43 L
0.290 0.310 7.37 7.87
M −−− 10 −−− 10
N 0.015 0.039 0.38 1.01
MILLIMETERSINCHES

−T−
SEATING PLANE
SOIC−14
D SUFFIX
CASE 751A−03
ISSUE G
−A−
14
1
G
D 14 PL
0.25 (0.010) A
8
−B−
P
7 PL
M
0.25 (0.010) B
7
X 45
C
R
K
M
S
B
T
S
M
M
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL
F
CONDITION.
DIM MIN MAX MIN MAX
A 8.55 8.75 0.337 0.344 B 3.80 4.00 0.150 0.157 C 1.35 1.75 0.054 0.068 D 0.35 0.49 0.014 0.019 F 0.40 1.25 0.016 0.049
G 1.27 BSC 0.050 BSC
J 0.19 0.25 0.008 0.009 K 0.10 0.25 0.004 0.009
M 0 7 0 7
 
P 5.80 6.20 0.228 0.244 R 0.25 0.50 0.010 0.019
INCHESMILLIMETERS
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Page 7
MC74HC32A
PACKAGE DIMENSIONS
TSSOP−14 DT SUFFIX
CASE 948G−01
ISSUE A
0.10 (0.004)
−T−
SEATING PLANE
14X REFK
S
U
T
S
N
0.25 (0.010)
U0.15 (0.006) T
S
2X L/2
0.10 (0.004) V
14
M
8
M
L
PIN 1 IDENT.
1
S
U0.15 (0.006) T
A
−V−
B
N
−U− F
7
DETAIL E
K
K1
J
J1
SECTION N−N
C
D
G
H
DETAIL E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE −W−.
DIM MIN MAX MIN MAX
A 4.90 5.10 0.193 0.200 B 4.30 4.50 0.169 0.177 C −−− 1.20 −−− 0.047 D 0.05 0.15 0.002 0.006 F 0.50 0.75 0.020 0.030 G 0.65 BSC 0.026 BSC H 0.50 0.60 0.020 0.024
−W−
J 0.09 0.20 0.004 0.008
J1 0.09 0.16 0.004 0.006
K 0.19 0.30 0.007 0.012
K1 0.19 0.25 0.007 0.010
L 6.40 BSC 0.252 BSC M 0 8 0 8

INCHESMILLIMETERS
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Page 8
14 8
1
Z
D
e
b
0.13 (0.005)
M
E
7
A
A
0.10 (0.004)
H
E
VIEW P
1
MC74HC32A
PACKAGE DIMENSIONS
SOEIAJ−14
F SUFFIX
CASE 965−01
ISSUE O
L
E
Q
1
M
L DETAIL P
c
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS AND ARE MEASURED AT THE PARTING LINE. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.15 (0.006) PER SIDE.
4. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY.
5. THE LEAD WIDTH DIMENSION (b) DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE LEAD WIDTH DIMENSION AT MAXIMUM MATERIAL CONDITION. DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OR THE FOOT. MINIMUM SPACE BETWEEN PROTRUSIONS AND ADJACENT LEAD TO BE 0.46 ( 0.018).
MILLIMETERS
DIM MIN MAX MIN MAX
−−− 2.05 −−− 0.081
A
A
0.05 0.20 0.002 0.008
1
0.35 0.50 0.014 0.020
b
0.18 0.27 0.007 0.011
c
9.90 10.50 0.390 0.413
D
5.10 5.45 0.201 0.215
E
1.27 BSC 0.050 BSC
e
H
7.40 8.20 0.291 0.323
E
0.50 0.85 0.020 0.033
L
L
1.10 1.50 0.043 0.059
E
0
M
Q
0.70 0.90 0.028 0.035
1
−−− 1.42 −−− 0.056
Z
INCHES
10
10
0
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MC74HC32A/D
8
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