Datasheet MC74HC257N, MC74HC257D Datasheet (Motorola)

Page 1

SEMICONDUCTOR TECHNICAL DATA
1
REV 6
Motorola, Inc. 1995
10/95
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High–Performance Silicon–Gate CMOS
The MC74HC257 is identical in pinout to the LS257. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs.
This device selects a (4–bit) nibble from either the A or B inputs as determined by the Select input. The nibble is presented at the outputs in noninverted form when the Output Enable pin is at a low level. A high level on the Output Enable pin switches the outputs into the high–impedance state.
The HC257 is similar in function to the HC157 which do not have 3–state outputs.
Output Drive Capability: 15 LSTTL Loads
Outputs Directly Interface to CMOS, NMOS, and TTL
Operating Voltage Range: 2 to 6 V
Low Input Current: 1 µA
High Noise Immunity Characteristic of CMOS Devices
In Compliance with the Requirements Defined by JEDEC Standard
No. 7A
Chip Complexity: 108 FETs or 27 Equivalent Gates
LOGIC DIAGRAM
2 5 11 14
3 6
10 13
4 7 9
12
1 15
A0 A1 A2 A3
B0 B1 B2 B3
Y0 Y1 Y2 Y3
SELECT OUTPUT
ENABLE
NONINVERTING NIBBLE OUTPUT
NIBBLE
A INPUT
NIBBLE
B INPUT
PIN 16 = V
CC
PIN 8 = GND

PIN ASSIGNMENT
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
Y3
B3
A3
OUTPUT ENABLE
V
CC
Y2
B2
A2
Y0
B0
A0
SELECT
GND
Y1
B1
A1
FUNCTION TABLE
Inputs Outputs
Output Enable Select Y0 – Y3
H X Z L L A0 – A3 L H B0 – B3
X = don’t care Z = high impedance A0– A3, B0–B3 = the levels of the respective Nibble Inputs.
D SUFFIX
SOIC PACKAGE
CASE 751B–05
N SUFFIX
PLASTIC PACKAGE
CASE 648–08
1
16
1
16
ORDERING INFORMATION
MC74HCXXXN MC74HCXXXD
Plastic SOIC
Page 2
MC74HC257
MOTOROLA High–Speed CMOS Logic Data
DL129 — Rev 6
2
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
V
CC
DC Supply Voltage (Referenced to GND)
– 0.5 to + 7.0
V
V
in
DC Input Voltage (Referenced to GND)
– 1.5 to VCC + 1.5
V
V
out
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
I
in
DC Input Current, per Pin
± 20
mA
I
out
DC Output Current, per Pin
± 35
mA
I
CC
DC Supply Current, VCC and GND Pins
± 75
mA
P
D
Power Dissipation in Still Air Plastic DIP†
SOIC Package†
750 500
mW
T
stg
Storage Temperature
– 65 to + 150
_
C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
260
_
C
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
V
CC
DC Supply Voltage (Referenced to GND)
2.0
6.0
V
Vin, V
out
DC Input Voltage, Output Voltage (Referenced to GND)
0
V
CC
V
T
A
Operating Temperature, All Package Types
– 55
+ 125
_
C
tr, t
f
Input Rise and Fall Time VCC = 2.0 V
(Figure 1) VCC = 4.5 V
VCC = 6.0 V
0 0 0
1000
500 400
ns
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Symbol
Parameter
Test Conditions
V
CC V
– 55 to
25_C
v
85_Cv 125_C
Unit
V
IH
Minimum High–Level Input Voltage
V
out
= 0.1 V or VCC – 0.1 V
|I
out
| v 20 µA
2.0
4.5
6.0
1.5
3.15
4.2
1.5
3.15
4.2
1.5
3.15
4.2
V
V
IL
Maximum Low–Level Input Voltage
V
out
= 0.1 V or VCC – 0.1 V
|I
out
| v 20 µA
2.0
4.5
6.0
0.3
0.9
1.2
0.3
0.9
1.2
0.3
0.9
1.2
V
V
OH
Minimum High–Level Output Voltage
Vin = VIH or V
IL
|I
out
| v 20 µA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
Vin = VIH or VIL|I
out
| v 6.0 mA
|I
out
| v 7.8 mA
4.5
6.0
3.98
5.48
3.84
5.34
3.70
5.20
V
OL
Maximum Low–Level Output Voltage
Vin = VIH or V
IL
|I
out
| v 20 µA
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
Vin = VIH or VIL|I
out
| v 6.0 mA
|I
out
| v 7.8 mA
4.5
6.0
0.26
0.26
0.33
0.33
0.40
0.40
I
in
Maximum Input Leakage Current
Vin = VCC or GND
6.0
± 0.1
± 1.0
± 1.0
µA
I
OZ
Maximum Three–State Leakage Current
Output in High–Impedance State Vin = VIL or V
IH
V
out
= VCC or GND
6.0
± 0.5
± 5.0
± 10
µA
I
CC
Maximum Quiescent Supply Current (per Package)
Vin = VCC or GND I
out
= 0 µA
6.0
8
80
160
µA
NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high–impedance cir­cuit. For proper operation, Vin and V
out
should be constrained to the
range GND v (Vin or V
out
) v VCC.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open.
Page 3
MC74HC257
High–Speed CMOS Logic Data DL129 — Rev 6
3 MOTOROLA
AC ELECTRICAL CHARACTERISTICS (C
L
= 50 pF, Input tr = tf = 6 ns)
Guaranteed Limit
Symbol
Parameter
V
CC V
– 55 to
25_C
v
85_Cv 125_C
Unit
t
PLH
,
t
PHL
Maximum Propagation Delay, Nibble A or B to Output Y
(Figures 1 and 4)
2.0
4.5
6.0
100
20 17
125
25 21
150
30 26
ns
t
PLH
,
t
PHL
Maximum Propagation Delay, Select to Output Y
(Figures 2 and 4)
2.0
4.5
6.0
100
20 17
125
25 21
150
30 26
ns
t
PLZ
,
t
PHZ
Maximum Propagation Delay, Output Enable to Output Y
(Figures 3 and 5)
2.0
4.5
6.0
150
30 26
190
38 33
225
45 38
ns
t
PZL
,
t
PZH
Maximum Propagation Delay, Output Enable to Output Y
(Figures 3 and 5)
2.0
4.5
6.0
150
30 26
190
38 33
225
45 38
ns
t
TLH
,
t
THL
Maximum Output Transition Time, Any Output
(Figures 1 and 4)
2.0
4.5
6.0
60 12 10
75 15 13
90 18 15
ns
C
in
Maximum Input Capacitance
10
10
10
pF
C
out
Maximum Three–State Output Capacitance (Output in High–Impedance
State)
15
15
15
pF
NOTES:
1. For propagation delays with loads other than 50 pF, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
2. Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
C
PD
Power Dissipation Capacitance (Per Package)*
39
pF
*Used to determine the no–load dynamic power consumption: PD = CPD V
CC
2
f + ICC VCC. For load considerations, see Chapter 2 of the
Motorola High–Speed CMOS Data Book (DL129/D).
PIN DESCRIPTIONS
INPUTS A0, A1, A2, A3 (Pins 2, 5, 11, 14)
Nibble A input. The data present on these pins is trans­ferred to the output when the Select input is at a low level and the Output Enable input is at a low level. The data is pres­ented to the outputs in noninverted form.
B0, B1, B2, B3 (Pins 3, 6, 10, 13)
Nibble B input. The logic data present on these pins is transferred to the output when the Select input is at a high level and the Output Enable input is at a low level. The data is presented to the outputs in noninverted form.
OUTPUTS Y0, Y1, Y2, Y3 (Pins 4, 7, 9, 12)
Nibble output. The selected nibble input is presented at these outputs when the Output Enable input is at a low level.
For the Output Enable input at a high level, the outputs are switched to the high impedance state.
CONTROL INPUTS
Select (Pin 1)
Nibble select. This input determines the nibble to be trans­ferred to the outputs. A low level on this input selects the A inputs and a high level selects the B inputs.
Output Enable (Pin 15)
Output Enable. A low level on this input allows the selected input data to be presented at the outputs. A high level on this input forces the outputs into the high–impedance state.
Page 4
MC74HC257
MOTOROLA High–Speed CMOS Logic Data
DL129 — Rev 6
4
SWITCHING WAVEFORMS
Figure 1. Figure 2.
Figure 3.
V
CC
GND
t
f
t
r
NIBBLE INPUT
A OR B
OUTPUT Y
10%
50%
90%
10%
50%
90%
t
TLH
t
PLH
t
PHL
t
THL
V
CC
GND
50%
SELECT
t
PLH
t
PHL
50%
OUTPUT Y
VALIDVALID
OUTPUT
ENABLE
OUTPUT Y
OUTPUT Y
50%
50%
50%
90%
10%
t
PZL
t
PLZ
t
PZHtPHZ
V
CC
GND HIGH
IMPEDANCE V
OL
V
OH
HIGH IMPEDANCE
TEST CIRCUITS
*Includes all probe and jig capacitance
CL*
TEST POINT
DEVICE UNDER
TEST
OUTPUT
Figure 4.
*Includes all probe and jig capacitance
CL*
TEST POINT
DEVICE UNDER
TEST
OUTPUT
Figure 5.
CONNECT TO VCC WHEN TESTING t
PLZ
AND t
PZL
. CONNECT TO GND WHEN TESTING t
PHZ
AND t
PZH
.
1 k
Page 5
MC74HC257
High–Speed CMOS Logic Data DL129 — Rev 6
5 MOTOROLA
EXPANDED LOGIC DIAGRAM
NIBBLE INPUTS
A0
B0
A1
B1
A2
B2
A3
B3
SELECT
OUTPUT
ENABLE
2
3
5
6
11
10
14
13
15
1
NIBBLE OUTPUT
Y0
Y1
Y2
Y3
12
9
7
4
Page 6
MC74HC257
MOTOROLA High–Speed CMOS Logic Data
DL129 — Rev 6
6
OUTLINE DIMENSIONS
N SUFFIX
PLASTIC PACKAGE
CASE 648–08
ISSUE R
MIN MINMAX MAX
INCHES MILLIMETERS
DIM
A B C D F G H J K L M S
18.80
6.35
3.69
0.39
1.02
0.21
2.80
7.50 0
°
0.51
19.55
6.85
4.44
0.53
1.77
0.38
3.30
7.74 10
°
1.01
0.740
0.250
0.145
0.015
0.040
0.008
0.110
0.295 0
°
0.020
0.770
0.270
0.175
0.021
0.070
0.015
0.130
0.305 10
°
0.040
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD FLASH.
5. ROUNDED CORNERS OPTIONAL.
2.54 BSC
1.27 BSC
0.100 BSC
0.050 BSC
–A
B
1 8
916
F
H
G
D
16 PL
S
C
–T
SEATING PLANE
K
J
M
L
T A0.25 (0.010)
M M
0.25 (0.010) T B A
M
S S
MIN MINMAX MAX
MILLIMETERS INCHES
DIM
A B C D F G J
K M P R
9.80
3.80
1.35
0.35
0.40
0.19
0.10 0
°
5.80
0.25
10.00
4.00
1.75
0.49
1.25
0.25
0.25 7
°
6.20
0.50
0.386
0.150
0.054
0.014
0.016
0.008
0.004 0
°
0.229
0.010
0.393
0.157
0.068
0.019
0.049
0.009
0.009 7
°
0.244
0.019
1.27 BSC 0.050 BSC
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION.
1
8
916
–A
–B
D 16 PL
K
C
G
–T
SEATING
PLANE
R X 45°
M
J
F
P 8 PL
0.25 (0.010) B
M M
D SUFFIX
PLASTIC SOIC PACKAGE
CASE 751B–05
ISSUE J
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MC74HC257/D
*MC74HC257/D*
CODELINE
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