Datasheet MC54HC241AJ, MC74HC241ADW Datasheet (Motorola)

Page 1

SEMICONDUCTOR TECHNICAL DATA
1
REV 7
Motorola, Inc. 1997
2/97
     "  ! "  "
High–Performance Silicon–Gate CMOS
The MC54/74HC241A is identical in pinout to the LS241. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs.
This octal noninverting buffer/line driver/line receiver is designed to be used with 3–state memory address drivers, clock drivers, and other sub–oriented systems. The device has noninverted outputs and two output enables. Enable A is active–low and Enable B is active–high.
The HC241A is similar in function to the HC244A and HC240A.
Output Drive Capability: 15 LSTTL Loads
Outputs Directly Interface to CMOS, NMOS, and TTL
Operating Voltage Range: 2 to 6 V
Low Input Current: 1 µA
High Noise Immunity Characteristic of CMOS Devices
In Compliance with the Requirements Defined by JEDEC Standard
No. 7A
Chip Complexity: 134 FETs or 33.5 Equivalent Gates
LOGIC DIAGRAM
DATA
INPUTS
A1
A2
A3
A4
B1
B2
B3
B4
17
15
13
11
8
6
4
218
16
14
12
9
7
5
3
YB4
YB3
YB2
YB1
YA4
YA3
YA2
YA1
NONINVERTING OUTPUTS
PIN 20 = V
CC
PIN 10 = GND
OUTPUT
ENABLES
ENABLE A ENABLE B
1 19

PIN ASSIGNMENT
A3
A2
YB4
A1
ENABLE A
GND
YB1
A4
YB2
YB3 5
4
3
2
1
10
9
8
7
6
14
15
16
17
18
19
20
11
12
13
YA2
B4
YA1
ENABLE B
V
CC
B1
YA4
B2
YA3
B3
FUNCTION TABLE
Inputs Output Inputs Output
Enable Enable
AAYA BBYB
LLL HLL LHH HHH
HXZ LXZ
Z = high impedance
DW SUFFIX
SOIC PACKAGE
CASE 751D–04
N SUFFIX
PLASTIC PACKAGE
CASE 738–03
ORDERING INFORMATION
MC54HCXXXAJ MC74HCXXXAN MC74HCXXXADW
Ceramic Plastic SOIC
J SUFFIX
CERAMIC PACKAGE
CASE 732–03
1
20
1
20
1
20
Page 2
MC54/74HC241A
MOTOROLA High–Speed CMOS Logic Data
DL129 — Rev 6
2
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
V
CC
DC Supply Voltage (Referenced to GND)
– 0.5 to + 7.0
V
V
in
DC Input Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
V
out
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
I
in
DC Input Current, per Pin
± 20
mA
I
out
DC Output Current, per Pin
± 35
mA
I
CC
DC Supply Current, VCC and GND Pins
± 75
mA
Î
Î
P
D
ОООООООООООО
Î
Power Dissipation in Still Air,Plastic or Ceramic DIP†
SOIC Package†
ÎÎÎÎ
Î
750 500
Î
Î
mW
T
stg
Storage Temperature
– 65 to + 150
_
C
Î
Î
T
L
ОООООООООООО
Î
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
(Ceramic DIP)
ÎÎÎÎ
Î
260 300
Î
Î
_
C
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
Ceramic DIP: – 10 mW/_C from 100_ to 125_C SOIC Package: – 7 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
V
CC
DC Supply Voltage (Referenced to GND)
2.0
6.0
V
Vin, V
out
DC Input Voltage, Output Voltage (Referenced to GND)
0
V
CC
V
T
A
Operating Temperature, All Package Types
– 55
+ 125
_
C
ÎÎ
Î
tr, t
f
ОООООООООООО
Î
Input Rise and Fall Time VCC = 2.0 V
(Figure 1) VCC = 4.5 V
VCC = 6.0 V
Î
Î
0 0 0
Î
Î
1000
500 400
Î
Î
ns
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Symbol
Parameter
Test Conditions
V
CC
V
– 55 to
25_C
v
85_Cv 125_C
Unit
ÎÎ
Î
ÎÎ
Î
V
IH
ООООООО
Î
ООООООО
Î
Minimum High–Level Input Voltage
ООООООО
Î
ООООООО
Î
V
out
= VCC – 0.1 V
|I
out
| v 20 µA
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
ÎÎ
1.5
2.1
3.15
4.2
ÎÎ
Î
ÎÎ
Î
1.5
2.1
3.15
4.2
ÎÎ
Î
ÎÎ
Î
1.5
2.1
3.15
4.2
Î
Î
Î
Î
V
ÎÎ
Î
ÎÎ
Î
V
IL
ООООООО
Î
ООООООО
Î
Maximum Low–Level Input Voltage
ООООООО
Î
ООООООО
Î
V
out
= 0.1 V
|I
out
| v 20 µA
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
ÎÎ
0.5
0.9
1.35
1.8
ÎÎ
Î
ÎÎ
Î
0.5
0.9
1.35
1.8
ÎÎ
Î
ÎÎ
Î
0.5
0.9
1.35
1.8
Î
Î
Î
Î
V
ÎÎ
Î
V
OH
ООООООО
Î
Minimum High–Level Output Voltage
ООООООО
Î
Vin = V
IH
|I
out
| v 20 µA
ÎÎ
Î
2.0
4.5
6.0
ÎÎ
1.9
4.4
5.9
ÎÎ
Î
1.9
4.4
5.9
ÎÎ
Î
1.9
4.4
5.9
Î
Î
V
ÎÎÎОООООООÎООООООО
Î
Vin = V
IH
|I
out
| v 2.4 mA
|I
out
| v 6.0 mA
|I
out
| v 7.8 mA
ÎÎ
Î
3.0
4.5
6.0
ÎÎ
2.48
3.98
5.48
ÎÎ
Î
2.34
3.84
5.34
ÎÎ
Î
2.2
3.7
5.2
Î
Î
ÎÎ
Î
V
OL
ООООООО
Î
Maximum Low–Level Output Voltage
ООООООО
Î
Vin = V
IL
|I
out
| v 20 µA
ÎÎ
Î
2.0
4.5
6.0
ÎÎ
0.1
0.1
0.1
ÎÎ
Î
0.1
0.1
0.1
ÎÎ
Î
0.1
0.1
0.1
Î
Î
V
ÎÎ
Î
ÎÎ
Î
ООООООО
Î
ООООООО
Î
ООООООО
Î
ООООООО
Î
Vin = V
IL
|I
out
| v 2.4 mA
|I
out
| v 6.0 mA
|I
out
| v 7.8 mA
ÎÎ
Î
ÎÎ
Î
3.0
4.5
6.0
ÎÎ
ÎÎ
0.26
0.26
0.26
ÎÎ
Î
ÎÎ
Î
0.33
0.33
0.33
ÎÎ
Î
ÎÎ
Î
0.4
0.4
0.4
Î
Î
Î
Î
This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high–impedance cir­cuit. For proper operation, Vin and V
out
should be constrained to the
range GND v (Vin or V
out
) v VCC.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open.
Page 3
MC54/74HC241A
High–Speed CMOS Logic Data DL129 — Rev 6
3 MOTOROLA
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Unit
v
125_C
v
85_C
– 55 to
25_C
V
CC
V
Test Conditions
Parameter
Symbol
I
in
Maximum Input Leakage Current
Vin = VCC or GND
6.0
± 0.1
± 1.0
± 1.0
µA
ÎÎ
Î
ÎÎ
Î
I
OZ
ООООООО
Î
ООООООО
Î
Maximum Three–State Leakage Current
ООООООО
Î
ООООООО
Î
Output in High–Impedance State Vin = VIL or V
IH
V
out
= VCC or GND
ÎÎ
Î
ÎÎ
Î
6.0
ÎÎ
ÎÎ
± 0.5
ÎÎ
Î
ÎÎ
Î
± 5.0
ÎÎ
Î
ÎÎ
Î
± 10
Î
Î
Î
Î
µA
I
CC
Maximum Quiescent Supply Current (per Package)
Vin = VCC or GND I
out
= 0 µA
6.0
4.0
40
160
µA
NOTE: Information on typical parametric values along with high frequency or heavy load considerations, can be found in Chapter 2 of the Motorola
High–Speed CMOS Data Book (DL129/D).
AC ELECTRICAL CHARACTERISTICS (C
L
= 50 pF, Input tr = tf = 6.0 ns)
Guaranteed Limit
ÎÎ
Î
Symbol
ООООООООООООООО
Î
Parameter
ÎÎ
Î
V
CC
V
ÎÎ
– 55 to
25_C
ÎÎ
Î
v
85_C
ÎÎ
Î
v
125_C
Î
Î
Unit
ÎÎ
Î
ÎÎ
Î
t
PLH
,
t
PHL
ООООООООООООООО
Î
ООООООООООООООО
Î
Maximum Propagation Delay, Input A to Output Y
(Figures 1 and 3)
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
ÎÎ
90 45 18 15
ÎÎ
Î
ÎÎ
Î
115
60 23 20
ÎÎ
Î
ÎÎ
Î
135
70 27 23
Î
Î
Î
Î
ns
ÎÎ
Î
ÎÎ
Î
t
PLZ
,
t
PHZ
ООООООООООООООО
Î
ООООООООООООООО
Î
Maximum Propagation Delay, Output Enable to Y
(Figures 2 and 4)
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
ÎÎ
120
60 24 20
ÎÎ
Î
ÎÎ
Î
150
70 30 26
ÎÎ
Î
ÎÎ
Î
180
80 36 31
Î
Î
Î
Î
ns
ÎÎ
Î
ÎÎ
Î
t
PZL
,
t
PZH
ООООООООООООООО
Î
ООООООООООООООО
Î
Maximum Propagation Delay, Output Enable to Y
(Figures 2 and 4)
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
ÎÎ
90 60 18 15
ÎÎ
Î
ÎÎ
Î
115
70 23 20
ÎÎ
Î
ÎÎ
Î
135
80 27 23
Î
Î
Î
Î
ns
ÎÎ
Î
ÎÎ
Î
t
TLH
,
t
THL
ООООООООООООООО
Î
ООООООООООООООО
Î
Maximum Output Transition Time, Any Output
(Figures 1 and 3)
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
ÎÎ
60 23 12 10
ÎÎ
Î
ÎÎ
Î
75 27 15 13
ÎÎ
Î
ÎÎ
Î
90 32 18 15
Î
Î
Î
Î
ns
C
in
Maximum Input Capacitance
10
10
10
pF
ÎÎ
C
out
ООООООООООООООО
Maximum Three–State Output Capacitance (Output in High–Impedance State)
ÎÎÎÎ15ÎÎ15ÎÎ15Î
pF
NOTE:For propagation delays with loads other than 50 pF , and information on typical parametric values, see Chapter 2 of the Motorola High–
Speed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
C
PD
Power Dissipation Capacitance (Per Transceiver Channel)*
34
pF
*Used to determine the no–load dynamic power consumption: PD = CPD V
CC
2
f + ICC VCC. For load considerations, see Chapter 2 of the
Motorola High–Speed CMOS Data Book (DL129/D).
Page 4
MC54/74HC241A
MOTOROLA High–Speed CMOS Logic Data
DL129 — Rev 6
4
SWITCHING W AVEFORMS
Figure 1. Figure 2.
*Includes all probe and jig capacitance
CL*
TEST POINT
DEVICE UNDER
TEST
OUTPUT
Figure 3. Test Circuit
*Includes all probe and jig capacitance
CL*
TEST POINT
DEVICE UNDER
TEST
OUTPUT
Figure 4. Test Circuit
CONNECT TO VCC WHEN TESTING t
PLZ
AND t
PZL
. CONNECT TO GND WHEN TESTING t
PHZ
AND t
PZH
.
1 k
ENABLE A
ENABLE B
OUTPUT Y
OUTPUT Y
V
CC
GND V
CC
GND HIGH
IMPEDANCE
HIGH IMPEDANCE
V
OL
V
OH
50%
50%
50%
50%
90%
10%
t
PZLtPLZ
t
PZHtPHZ
V
CC
GND
t
f
t
r
DATA INPUT
A OR B
OUTPUT
YA OR YB
10%
50%
90%
10%
50%
90%
t
TLH
t
PLH
t
PHL
t
THL
PIN DESCRIPTIONS
INPUTS A1, A2, A3, A4, B1, B2, B3, B4
(Pins 2, 4, 6, 8, 11, 13, 15, 17)
Data input pins. Data on these pins appear in noninverted form on the corresponding Y outputs when the outputs are enabled.
CONTROLS Enable A (Pin 1)
Output enable (active–low). When a low level is applied to this pin, the outputs of the “A” devices are enabled and the devices function as noninverting buffers. When a high level is applied, the outputs assume the high–impedance state.
Enable 8 (Pin 19)
Output enable (active–high). When a high level is applied to this pin, the outputs of the “B” devices are enabled and the devices function as noninverting buffers. When a low level is applied, the outputs assume the high–impedance state.
OUTPUTS
YA1, YA2, YA3, YA4, YB1, YB2, YB3, YB4 (Pins 18, 16, 14, 12, 9, 7, 5, 3)
Device outputs. Depending upon the state of the output– enable pins, these outputs are either noninverting outputs or high–impedance outputs.
Page 5
MC54/74HC241A
High–Speed CMOS Logic Data DL129 — Rev 6
5 MOTOROLA
LOGIC DETAIL
DATA
INPUT
A
OUTPUT
ENABLES
TO THREE OTHER
“B” BUFFERS
TWO OF 8 BUFFERS
YA
V
CC
DATA
INPUT
B
YB
V
CC
ENABLE A
TO THREE OTHER
“A” BUFFERS
ENABLE B
Page 6
MC54/74HC241A
MOTOROLA High–Speed CMOS Logic Data
DL129 — Rev 6
6
OUTLINE DIMENSIONS
J SUFFIX
CERAMIC PACKAGE
CASE 732–03
ISSUE E
N SUFFIX
PLASTIC PACKAGE
CASE 738–03
ISSUE E
DW SUFFIX
PLASTIC SOIC PACKAGE
CASE 751D–04
ISSUE E
NOTES:
1. LEADS WITHIN 0.25 (0.010) DIAMETER, TRUE POSITION AT SEATING PLANE, AT MAXIMUM MATERIAL CONDITION.
2. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL.
3. DIMENSIONS A AND B INCLUDE MENISCUS.
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A 23.88 25.15 0.940 0.990 B 6.60 7.49 0.260 0.295 C 3.81 5.08 0.150 0.200 D 0.38 0.56 0.015 0.022 F 1.40 1.65 0.055 0.065 G 2.54 BSC 0.100 BSC H 0.51 1.27 0.020 0.050 J 0.20 0.30 0.008 0.012 K 3.18 4.06 0.125 0.160 L 7.62 BSC 0.300 BSC M 0 15 0 15 N 0.25 1.02 0.010 0.040
____
A
20
110
11
B
F
C
SEATING PLANE
D
H
G
K
N
J
M
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD FLASH.
M
L
J
20 PL
M
B
M
0.25 (0.010) T
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 25.66 27.171.010 1.070 B 6.10 6.600.240 0.260 C 3.81 4.570.150 0.180 D 0.39 0.550.015 0.022
G 2.54 BSC0.100 BSC J 0.21 0.380.008 0.015 K 2.80 3.550.110 0.140 L 7.62 BSC0.300 BSC M 0 15 0 15 N 0.51 1.010.020 0.040
____
E
1.27 1.770.050 0.070
1
11
10
20
–A–
SEATING PLANE
K
N
FG
D
20 PL
–T–
M
A
M
0.25 (0.010) T
E
B
C
F
1.27 BSC0.050 BSC
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.150 (0.006) PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.13 (0.005) TOTAL IN EXCESS OF D DIMENSION AT MAXIMUM MATERIAL CONDITION.
–A–
–B–
20
1
11
10
S
A
M
0.010 (0.25) B
S
T
D20X
M
B
M
0.010 (0.25)
P10X
J
F
G
18X
K
C
–T–
SEATING PLANE
M
R
X 45
_
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A 12.65 12.95 0.499 0.510 B 7.40 7.60 0.292 0.299 C 2.35 2.65 0.093 0.104 D 0.35 0.49 0.014 0.019
F 0.50 0.90 0.020 0.035
G 1.27 BSC 0.050 BSC
J 0.25 0.32 0.010 0.012 K 0.10 0.25 0.004 0.009 M 0 7 0 7
P 10.05 10.55 0.395 0.415 R 0.25 0.75 0.010 0.029
__
__
Page 7
MC54/74HC241A
High–Speed CMOS Logic Data DL129 — Rev 6
7 MOTOROLA
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MC74HC241A/D
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