Datasheet MC74HC175AF, MC74HC175ADTEL, MC74HC175ADR2, MC74HC175ADT, MC74HC175AFR2 Datasheet (MOTOROLA)

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Page 1
Semiconductor Components Industries, LLC, 1999
March, 2000 – Rev. 2
1 Publication Order Number:
MC74HC175A/D
MC74HC175A
Quad D Flip-Flop with Common Clock and Reset
High–Performance Silicon–Gate CMOS
This device consists of four D flip–flops with common Reset and Clock inputs, and separate D inputs. Reset (active–low) is asynchronous and occurs when a low level is applied to the Reset input. Information at a D input is transferred to the corresponding Q output on the next positive going edge of the Clock input.
Output Drive Capability: 10 LSTTL Loads
Outputs Directly Interface to CMOS, NMOS, and TTL
Operating Voltage Range: 2 to 6 V
Low Input Current: 1 µA
High Noise Immunity Characteristic of CMOS Devices
In Compliance with the Requirements Defined by JEDEC Standard
No. 7A
Chip Complexity 166 FETs or 41.5 Equivalent Gates
LOGIC DIAGRAM
PIN 16 = V
CC
PIN 8 = GND
9
4
5 12 13
CLOCK
D0 D1 D2 D3
RESET
1
DATA
INPUTS
2 3
7
6 10 11 15 14
Q0 Q0
Q1 Q1 Q2
Q2 Q3 Q3
INVERTING
AND
NONINVERTING
OUTPUTS
FUNCTION TABLE
Inputs Outputs
Reset Clock D Q Q
LXXLH HHHL HLLH H L X No Change
SO–16
D SUFFIX
CASE 751B
http://onsemi.com
TSSOP–16 DT SUFFIX CASE 948F
1
16
PDIP–16 N SUFFIX CASE 648
1
16
1
16
MARKING
DIAGRAMS
1
16
MC74HC175AN
AWLYYWW
1
16
HC175A
AWLYWW
A = Assembly Location WL = Wafer Lot YY = Year WW = Work Week
HC
175A
ALYW
1
16
Device Package Shipping
ORDERING INFORMATION
MC74HC175AN PDIP–16 2000 / Box MC74HC175AD SOIC–16
48 / Rail MC74HC175ADR2 SOIC–16 2500 / Reel MC74HC175ADT TSSOP–16 96 / Rail MC74HC175ADTR2 TSSOP–16
2500 / Reel
PIN ASSIGNMENT
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
D2
D3
Q3
Q3
V
CC
CLOCK
Q2
Q2
D0
Q0
Q0
RESET
GND
Q1
Q1
D1
Page 2
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2
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
V
CC
DC Supply Voltage (Referenced to GND)
– 0.5 to + 7.0
V
V
in
DC Input Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
V
out
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
I
in
DC Input Current, per Pin
± 20
mA
I
out
DC Output Current, per Pin
± 25
mA
I
CC
DC Supply Current, VCC and GND Pins
± 50
mA
ÎÎ
Î
P
D
ОООООООООООО
Î
Power Dissipation in Still Air, Plastic DIP†
SOIC Package†
TSSOP Package†
ÎÎÎ
Î
750 500 450
Î
Î
mW
T
stg
Storage Temperature
– 65 to + 150
_
C
ÎÎ
Î
T
L
ОООООООООООО
Î
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP, SOIC or TSSOP Package)
ÎÎÎ
Î
260
Î
Î
_
C
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C TSSOP Package: – 6.1 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
ÎÎ
Max
Unit
V
CC
DC Supply Voltage (Referenced to GND)
2.0
ÎÎ
6.0
V
Vin, V
out
DC Input Voltage, Output Voltage (Referenced to GND)
0
ÎÎ
V
CC
V
T
A
Operating Temperature, All Package Types
– 55
ÎÎ
+ 125
_
C
ÎÎ
Î
tr, t
f
ООООООООООООО
Î
Input Rise and Fall Time VCC = 2.0 V
(Figure 1) VCC = 3.0 V
VCC = 4.5 V VCC = 6.0 V
Î
Î
0 0 0
ÎÎ
ÎÎ
1000
600 500 400
Î
Î
ns
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
ÎÎ
Î
Symbol
ООООООО
Î
Parameter
ООООООО
Î
Test Conditions
ÎÎ
Î
V
CC V
ÎÎ
Î
– 55 to
25_C
ÎÎÎ
Î
Î
Î
v
85_C
ÎÎ
Î
v
125_C
Î
Î
Unit
ÎÎ
Î
ÎÎ
Î
V
IH
ООООООО
Î
ООООООО
Î
Minimum High–Level Input Voltage
ООООООО
Î
ООООООО
Î
V
out
= 0.1 V or VCC – 0.1 V
|I
out
| v 20 µA
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
1.5
2.1
3.15
4.2
ÎÎÎ
Î
Î
Î
Î
Î
Î
1.5
2.1
3.15
4.2
ÎÎ
Î
ÎÎ
Î
1.5
2.1
3.15 4 2
Î
Î
Î
Î
V
ÎÎ
Î
ÎÎ
Î
V
IL
ООООООО
Î
ООООООО
Î
Maximum Low–Level Input Voltage
ООООООО
Î
ООООООО
Î
V
out
= 0.1 V or VCC – 0.1 V
|I
out
| v 20 µA
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
0.5
0.9
1.35
1.80
ÎÎÎ
Î
Î
Î
Î
Î
Î
0.5
0.9
1.35
1.80
ÎÎ
Î
ÎÎ
Î
0.5
0.9
1.35
1.80
Î
Î
Î
Î
V
ÎÎ
Î
V
OH
ООООООО
Î
Minimum High–Level Output Voltage
ООООООО
Î
Vin = VIH or V
IL
|I
out
| v 20 µA
ÎÎ
Î
2.0
4.5
6.0
ÎÎ
Î
1.9
4.4
5.9
ÎÎÎ
Î
Î
Î
1.9
4.4
5.9
ÎÎ
Î
1.9
4.4
5.9
Î
Î
V
ÎÎÎОООООООÎООООООО
Î
Vin = VIH or VIL|I
out
| v 2.4 mA
|I
out
| v 4.0 mA
|I
out
| v 5.2 mA
ÎÎ
Î
3.0
4.5
6.0
ÎÎ
Î
2.48
3.98
5.48
ÎÎÎ
Î
Î
Î
2.34
3.84
5.34
ÎÎ
Î
2.20
3.70
5.20
Î
Î
This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high–impedance cir­cuit. For proper operation, Vin and V
out
should be constrained to the
range GND v (Vin or V
out
) v VCC.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open.
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3
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Unit
Guaranteed Limit
V
CC
V
Test Conditions
Parameter
Symbol
Unit
v
125_C
ÎÎÎ
v
85_C
– 55 to
25_C
V
CC
V
Test Conditions
Parameter
Symbol
ÎÎ
Î
ÎÎ
Î
V
OL
ООООООО
Î
ООООООО
Î
Maximum Low–Level Output Voltage
ООООООО
Î
ООООООО
Î
Vin = VIH or V
IL
|I
out
| v 20 µA
ÎÎ
Î
ÎÎ
Î
2.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
0.1
0.1
0.1
ÎÎÎ
Î
Î
Î
Î
Î
Î
0.1
0.1
0.1
ÎÎ
Î
ÎÎ
Î
0.1
0.1
0.1
Î
Î
Î
Î
V
ÎÎÎОООООООÎООООООО
Î
Vin = VIH or VIL|I
out
| v 2.4 mA
|I
out
| v 4.0 mA
|I
out
| v 5.2 mA
ÎÎ
Î
3.0
4.5
6.0
ÎÎ
Î
0.26
0.26
0.26
ÎÎÎ
Î
Î
Î
0.33
0.33
0.33
ÎÎ
Î
0.40
0.40
0.40
Î
Î
ÎÎ
Î
I
in
ООООООО
Î
Maximum Input Leakage Current
ООООООО
Î
Vin = VCC or GND
ÎÎ
Î
6.0
ÎÎ
Î
± 0.1
ÎÎÎ
Î
Î
Î
± 1.0
ÎÎ
Î
± 1.0
Î
Î
µA
ÎÎ
Î
I
CC
ООООООО
Î
Maximum Quiescent Supply Current (per Package)
ООООООО
Î
Vin = VCC or GND I
out
= 0 µA
ÎÎ
Î
6.0
ÎÎ
Î
4
ÎÎÎ
Î
Î
40
ÎÎ
Î
160
Î
Î
µA
NOTE:Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
AC ELECTRICAL CHARACTERISTICS (C
L
= 50 pF, Input tr = tf = 6 ns)
Guaranteed Limit
ÎÎÎ
Î
Symbol
ОООООООООООООО
Î
Parameter
ÎÎ
Î
V
CC V
ÎÎ
Î
– 55 to
25_C
ÎÎÎ
Î
Î
Î
v
85_C
ÎÎ
Î
v
125_C
Î
Î
Unit
ÎÎÎ
Î
ÎÎÎ
Î
f
max
ОООООООООООООО
Î
ОООООООООООООО
Î
Maximum Clock Frequency (50% Duty Cycle)
(Figures 1 and 4)
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
6 10 30 35
ÎÎÎ
Î
Î
Î
Î
Î
Î
4.8
8.0 24 28
ÎÎ
Î
ÎÎ
Î
4
6 20 24
Î
Î
Î
Î
MHz
ÎÎÎ
Î
ÎÎÎ
Î
t
PLH
,
t
PHL
ОООООООООООООО
Î
ОООООООООООООО
Î
Maximum Propagation Delay, Clock to Q or Q
(Figures 1 and 4)
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
150
75 26 22
ÎÎÎ
Î
Î
Î
Î
Î
Î
190
90 32 28
ÎÎ
Î
ÎÎ
Î
225 110
38 33
Î
Î
Î
Î
ns
ÎÎÎ
Î
t
PHL
ОООООООООООООО
Î
Maximum Propagation Delay, Reset to Q or Q
(Figures 2 and 4)
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
125
70 22 19
ÎÎÎ
Î
Î
Î
155
85 27 24
ÎÎ
Î
190 110
34 30
Î
Î
ns
ÎÎÎ
Î
ÎÎÎ
Î
t
TLH
,
t
THL
ОООООООООООООО
Î
ОООООООООООООО
Î
Maximum Output Transition Time, Any Output
(Figures 1 and 4)
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
75 27 15 13
ÎÎÎ
Î
Î
Î
Î
Î
Î
95 32 19 16
ÎÎ
Î
ÎÎ
Î
110
36 22 19
Î
Î
Î
Î
ns
C
in
Maximum Input Capacitance
10
ÎÎÎ
10
10
pF
NOTES:
1. For propagation delays with loads other than 50 pF, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
2. Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
C
PD
Power Dissipation Capacitance (Per Flip–Flop)*
35
pF
*Used to determine the no–load dynamic power consumption: PD = CPD V
CC
2
f + ICC VCC. For load considerations, see Chapter 2 of the
Motorola High–Speed CMOS Data Book (DL129/D).
Page 4
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4
TIMING REQUIREMENTS (Input t
r
= tf = 6 ns)
Guaranteed Limit
ÎÎÎ
Î
Symbol
ОООООООООООООО
Î
Parameter
ÎÎ
Î
V
CC V
ÎÎ
Î
– 55 to
25_C
ÎÎÎ
Î
Î
Î
v
85_C
ÎÎ
Î
v
125_C
Î
Î
Unit
ÎÎÎ
Î
t
su
ОООООООООООООО
Î
Minimum Setup Time, Data to Clock
(Figure 3)
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
100
45 20 17
ÎÎÎ
Î
Î
Î
125
65 25 21
ÎÎ
Î
150
85 30 26
Î
Î
ns
ÎÎÎ
Î
ÎÎÎ
Î
t
h
ОООООООООООООО
Î
ОООООООООООООО
Î
Minimum Hold Time, Clock to Data
(Figure 3)
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
5 3 3 3
ÎÎÎ
Î
Î
Î
Î
Î
Î
5 3 3 3
ÎÎ
Î
ÎÎ
Î
5
3
3
3
Î
Î
Î
Î
ns
ÎÎÎ
Î
ÎÎÎ
Î
t
rec
ОООООООООООООО
Î
ОООООООООООООО
Î
Minimum Recovery Time, Reset Inactive to Clock
(Figure 2)
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
100
45 20 17
ÎÎÎ
Î
Î
Î
Î
Î
Î
125
65 25 21
ÎÎ
Î
ÎÎ
Î
150
85 30 26
Î
Î
Î
Î
ns
ÎÎÎ
Î
ÎÎÎ
Î
t
w
ОООООООООООООО
Î
ОООООООООООООО
Î
Minimum Pulse Width, Clock
(Figure 1)
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
80 45 16 14
ÎÎÎ
Î
Î
Î
Î
Î
Î
100
65 20 17
ÎÎ
Î
ÎÎ
Î
120
85 24 20
Î
Î
Î
Î
ns
ÎÎÎ
Î
ÎÎÎ
Î
t
w
ОООООООООООООО
Î
ОООООООООООООО
Î
Minimum Pulse Width, Reset
(Figure 2)
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
80 45 16 14
ÎÎÎ
Î
Î
Î
Î
Î
Î
100
65 20 17
ÎÎ
Î
ÎÎ
Î
120
85 24 20
Î
Î
Î
Î
ns
ÎÎÎ
Î
ÎÎÎ
Î
tr, t
f
ОООООООООООООО
Î
ОООООООООООООО
Î
Maximum Input Rise and Fall Times
(Figure 1)
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
1000
800 500 400
ÎÎÎ
Î
Î
Î
Î
Î
Î
1000
800 500 400
ÎÎ
Î
ÎÎ
Î
1000
800 500 400
Î
Î
Î
Î
ns
NOTE:Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
Page 5
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5
SWITCHING W AVEFORMS
Figure 1. Figure 2.
50%
50%
50%
50%
V
CC
V
CC
GND
GND
RESET
Q
Q
CLOCK
t
PLH
t
PHL
50%
DATA
CLOCK
V
CC
V
CC
GND
Figure 3.
GND
*Includes all probe and jig capacitance
CL*
TEST POINT
DEVICE UNDER
TEST
OUTPUT
Figure 4.
1/f
max
CLOCK
Q or Q
t
f
t
r
V
CC
GND
90%
50%
10%
90%
50%
10%
t
PLH
t
PHL
t
TLH
t
THL
t
w
t
w
t
rec
VALID
t
h
t
su
TEST CIRCUIT
Page 6
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6
DQ
C C
R
D0
CLOCK
D1
D2
D3
RESET
1
13
12
5
9
4
2
3
7
6
10
11
15
14
Q0
Q0
Q1
Q1
Q2
Q2
Q3
Q3
EXPANDED LOGIC DIAGRAM
DQ
C C
R
DQ
C C
R
DQ
C C
R
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7
P ACKAGE DIMENSIONS
PDIP–16
N SUFFIX
CASE 648–08
ISSUE R
MIN MINMAX MAX
INCHES MILLIMETERS
DIM
A B C D F G H
J K L M S
18.80
6.35
3.69
0.39
1.02
0.21
2.80
7.50 0°
0.51
19.55
6.85
4.44
0.53
1.77
0.38
3.30
7.74 10°
1.01
0.740
0.250
0.145
0.015
0.040
0.008
0.110
0.295 0°
0.020
0.770
0.270
0.175
0.021
0.070
0.015
0.130
0.305 10°
0.040
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD FLASH.
5. ROUNDED CORNERS OPTIONAL.
2.54 BSC
1.27 BSC
0.100 BSC
0.050 BSC
–A
B
18
916
F
H
G
D
16 PL
S
C
–T
SEATING PLANE
K
J
M
L
TA0.25 (0.010)
M M
0.25 (0.010) T B A
M
S S
MIN MINMAX MAX
MILLIMETERS INCHES
DIM
A B C D F G J K M P R
9.80
3.80
1.35
0.35
0.40
0.19
0.10 0°
5.80
0.25
10.00
4.00
1.75
0.49
1.25
0.25
0.25 7°
6.20
0.50
0.386
0.150
0.054
0.014
0.016
0.008
0.004 0°
0.229
0.010
0.393
0.157
0.068
0.019
0.049
0.009
0.009 7°
0.244
0.019
1.27 BSC 0.050 BSC
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION.
1
8
916
–A
–B
D
16 PL
K
C
G
–T
SEATING
PLANE
R X 45°
M
J
F
P 8 PL
0.25 (0.010) B
M M
SOIC–16
D SUFFIX
CASE 751B–05
ISSUE J
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8
P ACKAGE DIMENSIONS
TSSOP–16 DT SUFFIX
CASE 948F–01
ISSUE O
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A 4.90 5.10 0.193 0.200 B 4.30 4.50 0.169 0.177 C ––– 1.20 ––– 0.047 D 0.05 0.15 0.002 0.006 F 0.50 0.75 0.020 0.030 G 0.65 BSC 0.026 BSC H 0.18 0.28 0.007 0.011 J 0.09 0.20 0.004 0.008
J1 0.09 0.16 0.004 0.006
K 0.19 0.30 0.007 0.012
K1 0.19 0.25 0.007 0.010
L 6.40 BSC 0.252 BSC
M 0 8 0 8
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH. PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED
0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE –W–.
____
SECTION N–N
SEATING PLANE
IDENT.
PIN 1
1
8
16
9
DETAIL E
J
J1
B
C
D
A
K
K1
H
G
DETAIL E
F
M
L
2X L/2
–U–
S
U0.15 (0.006) T
S
U0.15 (0.006) T
S
U
M
0.10 (0.004) V
S
T
0.10 (0.004)
–T–
–V–
–W–
0.25 (0.010)
16X REFK
N
N
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