Datasheet MC74HC164AF, MC74HC164AFEL, MC74HC164AFL1, MC74HC164AFL2, MC74HC164AFR1 Datasheet (MOTOROLA)

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Page 1
Semiconductor Components Industries, LLC, 2000
March, 2000 – Rev. 1
1 Publication Order Number:
MC74HC164A/D
MC74HC164A
8-Bit Serial-Input/ Parallel-Output Shift Register
The MC74HC164A is identical in pinout to the LS164. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs.
The MC74HC164A is an 8–bit, serial–input to parallel–output shift register. Two serial data inputs, A1 and A2, are provided so that one input may be used as a data enable. Data is entered on each rising edge of the clock. The active–low asynchronous Reset overrides the Clock and Serial Data inputs.
Output Drive Capability: 10 LSTTL Loads
Outputs Directly Interface to CMOS, NMOS, and TTL
Operating Voltage Range: 2 to 6 V
Low Input Current: 1 µA
High Noise Immunity Characteristic of CMOS Devices
In Compliance with the Requirements Defined by JEDEC Standard
No. 7A
Chip Complexity: 244 FETs or 61 Equivalent Gates
LOGIC DIAGRAM
PIN 14 = V
CC
PIN 7 = GND
3
Q
A
4
5 6
10
11
12
13
Q
B
Q
C
Q
D
Q
E
Q
F
Q
G
Q
H
PARALLEL DATA OUTPUTS
9
RESET
CLOCK
8
SERIAL
DATA
INPUTS
A1 A2
1 2
DATA
FUNCTION TABLE
Inputs Outputs
Reset Clock A1 A2 QAQB… Q
H
LXXXLL… L H X X No Change HHDDQ
An
Q
Gn
HDHDQ
An
Q
Gn
D = data input QAn – QGn = data shifted from the preceding stage on a rising edge at the clock input.
Device Package Shipping
ORDERING INFORMATION
MC74HC164AN PDIP–14 2000 / Box MC74HC164AD SOIC–14
http://onsemi.com
55 / Rail
MC74HC164ADR2 SOIC–14 2500 / Reel
MARKING
DIAGRAMS
A = Assembly Location WL or L = Wafer Lot YY or Y = Year WW or W = Work Week
MC74HC164ADT TSSOP–14 96 / Rail MC74HC164ADTR2 TSSOP–14
2500 / Reel
TSSOP–14 DT SUFFIX
CASE 948G
HC
164A
ALYW
1
14
1
14
PDIP–14
N SUFFIX
CASE 646
MC74HC164AN
AWLYYWW
SOIC–14
D SUFFIX
CASE 751A
1
14
HC164A
AWLYWW
PIN ASSIGNMENT
11
12
13
14
8
9
105
4
3
2
1
7
6
Q
E
Q
F
Q
G
Q
H
V
CC
CLOCK
RESET
Q
B
Q
A
A2
A1
GND
Q
D
Q
C
Page 2
MC74HC164A
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2
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
V
CC
DC Supply Voltage (Referenced to GND)
– 0.5 to + 7.0
V
V
in
DC Input Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
V
out
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
I
in
DC Input Current, per Pin
± 20
mA
I
out
DC Output Current, per Pin
± 25
mA
I
CC
DC Supply Current, VCC and GND Pins
± 50
mA
ÎÎ
Î
P
D
ОООООООООООО
Î
Power Dissipation in Still Air, Plastic DIP†
SOIC Package†
TSSOP Package†
ÎÎÎ
Î
750 500 450
Î
Î
mW
T
stg
Storage Temperature
– 65 to + 150
_
C
ÎÎ
Î
T
L
ОООООООООООО
Î
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP, SOIC or TSSOP Package)
ÎÎÎ
Î
260
Î
Î
_
C
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C TSSOP Package: – 6.1 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
ÎÎ
Max
Unit
V
CC
DC Supply Voltage (Referenced to GND)
2.0
ÎÎ
6.0
V
Vin, V
out
DC Input Voltage, Output Voltage (Referenced to GND)
0
ÎÎ
V
CC
V
T
A
Operating Temperature, All Package Types
– 55
ÎÎ
+ 125
_
C
ÎÎ
Î
tr, t
f
ООООООООООООО
Î
Input Rise and Fall Time VCC = 2.0 V
(Figure 1) VCC = 4.5 V
VCC = 6.0 V
Î
Î
0 0 0
ÎÎ
ÎÎ
1000
500 400
Î
Î
ns
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
ÎÎ
Î
Symbol
ООООООО
Î
Parameter
ООООООО
Î
Test Conditions
ÎÎ
Î
V
CC V
ÎÎ
Î
–55_C to
25_C
ÎÎÎ
Î
Î
Î
v
85_C
ÎÎ
Î
v
125_C
Î
Î
Unit
ÎÎ
Î
ÎÎ
Î
V
IH
ООООООО
Î
ООООООО
Î
Minimum High–Level Input Voltage
ООООООО
Î
ООООООО
Î
V
out
= 0.1 V or VCC – 0.1 V
|I
out
| v 20 µA
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
1.5
2.1
3.15
4.2
ÎÎÎ
Î
Î
Î
Î
Î
Î
1.5
2.1
3.15
4.2
ÎÎ
Î
ÎÎ
Î
1.5
2.1
3.15
4.2
Î
Î
Î
Î
V
ÎÎ
Î
ÎÎ
Î
V
IL
ООООООО
Î
ООООООО
Î
Maximum Low–Level Input Voltage
ООООООО
Î
ООООООО
Î
V
out
= 0.1 V or VCC – 0.1 V
|I
out
| v 20 µA
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
0.5
0.9
1.35
1.8
ÎÎÎ
Î
Î
Î
Î
Î
Î
0.5
0.9
1.35
1.8
ÎÎ
Î
ÎÎ
Î
0.5
0.9
1.35
1.8
Î
Î
Î
Î
V
ÎÎ
Î
V
OH
ООООООО
Î
Minimum High–Level Output Voltage
ООООООО
Î
Vin = VIH or V
IL
|I
out
| v 20 µA
ÎÎ
Î
2.0
4.5
6.0
ÎÎ
Î
1.9
4.4
5.9
ÎÎÎ
Î
Î
Î
1.9
4.4
5.9
ÎÎ
Î
1.9
4.4
5.9
Î
Î
V
ÎÎÎОООООООÎООООООО
Î
Vin = VIH or VIL|I
out
| v 2.4 mA
|I
out
| v 4.0 mA
|I
out
| v 5.2 mA
ÎÎ
Î
3.0
4.5
6.0
ÎÎ
Î
2.48
3.98
5.48
ÎÎÎ
Î
Î
Î
2.34
3.84
5.34
ÎÎ
Î
2.20
3.70
5.20
Î
Î
This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high–impedance cir­cuit. For proper operation, Vin and V
out
should be constrained to the
range GND v (Vin or V
out
) v VCC.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open.
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3
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Unit
Guaranteed Limit
V
CC
V
Test Conditions
Parameter
Symbol
Unit
v
125_C
ÎÎÎ
v
85_C
–55_C to
25_C
V
CC
V
Test Conditions
Parameter
Symbol
ÎÎ
Î
ÎÎ
Î
V
OL
ООООООО
Î
ООООООО
Î
Maximum Low–Level Output Voltage
ООООООО
Î
ООООООО
Î
Vin = VIH or V
IL
|I
out
| v 20 µA
ÎÎ
Î
ÎÎ
Î
2.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
0.1
0.1
0.1
ÎÎÎ
Î
Î
Î
Î
Î
Î
0.1
0.1
0.1
ÎÎ
Î
ÎÎ
Î
0.1
0.1
0.1
Î
Î
Î
Î
V
ÎÎÎОООООООÎООООООО
Î
Vin = VIH or VIL|I
out
| v 2.4 mA
|I
out
| v 4.0 mA
|I
out
| v 5.2 mA
ÎÎ
Î
3.0
4.5
6.0
ÎÎ
Î
0.26
0.26
0.26
ÎÎÎ
Î
Î
Î
0.33
0.33
0.33
ÎÎ
Î
0.40
0.40
0.40
Î
Î
ÎÎ
Î
I
in
ООООООО
Î
Maximum Input Leakage Current
ООООООО
Î
Vin = VCC or GND
ÎÎ
Î
6.0
ÎÎ
Î
± 0.1
ÎÎÎ
Î
Î
Î
± 1.0
ÎÎ
Î
± 1.0
Î
Î
µA
I
CC
Maximum Quiescent Supply Current (per Package)
Vin = VCC or GND I
out
= 0 µA
6.0
4
ÎÎÎ
40
160
µA
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book
(DL129/D).
AC ELECTRICAL CHARACTERISTICS (C
L
= 50 pF, Input tr = tf = 6 ns)
Guaranteed Limit
ÎÎÎ
Î
Symbol
ОООООООООООООО
Î
Parameter
ÎÎ
Î
V
CC V
ÎÎ
Î
–55_C to
25_C
ÎÎÎ
Î
Î
Î
v
85_C
ÎÎ
Î
v
125_C
Î
Î
Unit
ÎÎÎ
Î
ÎÎÎ
Î
f
max
ОООООООООООООО
Î
ОООООООООООООО
Î
Maximum Clock Frequency (50% Duty Cycle)
(Figures 1 and 4)
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
10 20 40 50
ÎÎÎ
Î
Î
Î
Î
Î
Î
10 20 35 45
ÎÎ
Î
ÎÎ
Î
10 20 30 40
Î
Î
Î
Î
MHz
ÎÎÎ
Î
ÎÎÎ
Î
t
PLH
,
t
PHL
ОООООООООООООО
Î
ОООООООООООООО
Î
Maximum Propagation Delay, Clock to Q
(Figures 1 and 4)
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
160 100
32 27
ÎÎÎ
Î
Î
Î
Î
Î
Î
200 150
40 34
ÎÎ
Î
ÎÎ
Î
250 200
48 42
Î
Î
Î
Î
ns
ÎÎÎ
Î
ÎÎÎ
Î
t
PHL
ОООООООООООООО
Î
ОООООООООООООО
Î
Maximum Propagation Delay, Reset to Q
(Figures 2 and 4)
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
175 100
35 30
ÎÎÎ
Î
Î
Î
Î
Î
Î
220 150
44 37
ÎÎ
Î
ÎÎ
Î
260 200
53 45
Î
Î
Î
Î
ns
ÎÎÎ
Î
ÎÎÎ
Î
t
TLH
,
t
THL
ОООООООООООООО
Î
ОООООООООООООО
Î
Maximum Output Transition Time, Any Output
(Figures 1 and 4)
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
75 27 15 13
ÎÎÎ
Î
Î
Î
Î
Î
Î
95 32 19 16
ÎÎ
Î
ÎÎ
Î
110
36 22 19
Î
Î
Î
Î
ns
C
in
Maximum Input Capacitance
10
ÎÎÎ
10
10
pF
NOTES:
1. For propagation delays with loads other than 50 pF, see Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book (DL129/D).
2. Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
C
PD
Power Dissipation Capacitance (Per Package)*
180
pF
*Used to determine the no–load dynamic power consumption: PD = CPD V
CC
2
f + ICC VCC. For load considerations, see Chapter 2 of the
ON Semiconductor High–Speed CMOS Data Book (DL129/D).
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4
TIMING REQUIREMENTS (Input t
r
= tf = 6 ns)
Guaranteed Limit
ÎÎÎ
Î
Symbol
ОООООООООООООО
Î
Parameter
ÎÎ
Î
V
CC V
ÎÎ
Î
–55_C to
25_C
ÎÎÎ
Î
Î
Î
v
85_C
ÎÎ
Î
v
125_C
Î
Î
Unit
ÎÎÎ
Î
t
su
ОООООООООООООО
Î
Minimum Setup Time, A1 or A2 to Clock
(Figure 3)
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
25 15
7 5
ÎÎÎ
Î
Î
Î
35 20
8 6
ÎÎ
Î
40 25
9 6
Î
Î
ns
ÎÎÎ
Î
ÎÎÎ
Î
t
h
ОООООООООООООО
Î
ОООООООООООООО
Î
Minimum Hold Time, Clock to A1 or A2
(Figure 3)
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
3 3 3 3
ÎÎÎ
Î
Î
Î
Î
Î
Î
3 3 3 3
ÎÎ
Î
ÎÎ
Î
3 3 3 3
Î
Î
Î
Î
ns
ÎÎÎ
Î
ÎÎÎ
Î
t
rec
ОООООООООООООО
Î
ОООООООООООООО
Î
Minimum Recovery Time, Reset Inactive to Clock
(Figure 2)
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
3 3 3 3
ÎÎÎ
Î
Î
Î
Î
Î
Î
3 3 3 3
ÎÎ
Î
ÎÎ
Î
3 3 3 3
Î
Î
Î
Î
ns
ÎÎÎ
Î
ÎÎÎ
Î
t
w
ОООООООООООООО
Î
ОООООООООООООО
Î
Minimum Pulse Width, Clock
(Figure 1)
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
50 26 12 10
ÎÎÎ
Î
Î
Î
Î
Î
Î
60 35 15 12
ÎÎ
Î
ÎÎ
Î
75 45 20 15
Î
Î
Î
Î
ns
ÎÎÎ
Î
ÎÎÎ
Î
t
w
ОООООООООООООО
Î
ОООООООООООООО
Î
Minimum Pulse Width, Reset
(Figure 2)
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
50 26 12 10
ÎÎÎ
Î
Î
Î
Î
Î
Î
60 35 15 12
ÎÎ
Î
ÎÎ
Î
75 45 20 15
Î
Î
Î
Î
ns
ÎÎÎ
Î
ÎÎÎ
Î
tr, t
f
ОООООООООООООО
Î
ОООООООООООООО
Î
Maximum Input Rise and Fall Times
(Figure 1)
ÎÎ
Î
ÎÎ
Î
2.0
3.0
4.5
6.0
ÎÎ
Î
ÎÎ
Î
1000
800 500 400
ÎÎÎ
Î
Î
Î
Î
Î
Î
1000
800 500 400
ÎÎ
Î
ÎÎ
Î
1000
800 500 400
Î
Î
Î
Î
ns
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book
(DL129/D).
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MC74HC164A
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5
PIN DESCRIPTIONS
INPUTS A1, A2 (Pins 1, 2)
Serial Data Inputs. Data at these inputs determine the data to be entered into the first stage of the shift register. For a high level to be entered into the shift register, both A1 and A2 inputs must be high, thereby allowing one input to be used as a data–enable input. When only one serial input is used, the other must be connected to VCC.
Clock (Pin 8)
Shift Register Clock. A positive–going transition on this pin shifts the data at each stage to the next stage. The shift
register is completely static, allowing clock rates down to DC in a continuous or intermittent mode.
OUTPUTS QA – QH (Pins 3, 4, 5, 6, 10, 11, 12, 13)
Parallel Shift Register Outputs. The shifted data is
presented at these outputs in true, or noninverted, form.
CONTROL INPUT Reset (Pin 9)
Active–Low, Asynchronous Reset Input. A low voltage applied to this input resets all internal flip–flops and sets Outputs QA – QH to the low level state.
SWITCHING W AVEFORMS
t
f
V
CC
GND
90%
50%
10%
t
w
t
PLH
t
PHL
CLOCK
Q
t
TLH
t
THL
Figure 1.
RESET
t
rec
Figure 2.
t
r
1/f
max
90%
50%
10%
V
CC
GND
V
CC
GND
Q
CLOCK 50%
50%
50%
t
PHL
t
w
A1 OR A2
Figure 3.
V
CC GND V
CC GND
50%
50%
CLOCK
t
su
t
h
VALID
*Includes all probe and jig capacitance
CL*
TEST POINT
DEVICE UNDER
TEST
OUTPUT
Figure 4. Test Circuit
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6
TIMING DIAGRAM
A1 A2
CLOCK
RESET
8
1 2
9
DRQ
3 4 5 6 10 11 12 13
Q
A
Q
B
Q
C
Q
D
Q
E
Q
F
Q
G
Q
H
EXPANDED LOGIC DIAGRAM
DRQDRQDRQDRQDRQDRQDRQ
CLOCK
RESET
A1 A2
Q
A
Q
B
Q
C
Q
D
Q
E
Q
F
Q
G
Q
H
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7
P ACKAGE DIMENSIONS
PDIP–14
N SUFFIX
CASE 646–06
ISSUE L
NOTES:
1. LEADS WITHIN 0.13 (0.005) RADIUS OF TRUE POSITION AT SEATING PLANE AT MAXIMUM MATERIAL CONDITION.
2. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL.
3. DIMENSION B DOES NOT INCLUDE MOLD FLASH.
4. ROUNDED CORNERS OPTIONAL.
17
14 8
B
A F
HG D
K
C
N
L
J
M
SEATING PLANE
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.715 0.770 18.16 19.56 B 0.240 0.260 6.10 6.60 C 0.145 0.185 3.69 4.69 D 0.015 0.021 0.38 0.53 F 0.040 0.070 1.02 1.78
G 0.100 BSC 2.54 BSC
H 0.052 0.095 1.32 2.41 J 0.008 0.015 0.20 0.38 K 0.115 0.135 2.92 3.43 L 0.300 BSC 7.62 BSC
M 0 10 0 10
N 0.015 0.039 0.39 1.01
____
SOIC–14
D SUFFIX
CASE 751A–03
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION.
–A–
–B–
G
P
7 PL
14 8
71
M
0.25 (0.010) B
M
S
B
M
0.25 (0.010) A
S
T
–T–
F
R
X 45
SEATING PLANE
D 14 PL
K
C
J
M
_
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A 8.55 8.75 0.337 0.344 B 3.80 4.00 0.150 0.157 C 1.35 1.75 0.054 0.068 D 0.35 0.49 0.014 0.019 F 0.40 1.25 0.016 0.049 G 1.27 BSC 0.050 BSC J 0.19 0.25 0.008 0.009 K 0.10 0.25 0.004 0.009 M 0 7 0 7 P 5.80 6.20 0.228 0.244 R 0.25 0.50 0.010 0.019
____
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8
P ACKAGE DIMENSIONS
TSSOP–14 DT SUFFIX
CASE 948G–01
ISSUE O
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A 4.90 5.10 0.193 0.200 B 4.30 4.50 0.169 0.177 C ––– 1.20 ––– 0.047 D 0.05 0.15 0.002 0.006 F 0.50 0.75 0.020 0.030 G 0.65 BSC 0.026 BSC H 0.50 0.60 0.020 0.024 J 0.09 0.20 0.004 0.008
J1 0.09 0.16 0.004 0.006
K 0.19 0.30 0.007 0.012
K1 0.19 0.25 0.007 0.010
L 6.40 BSC 0.252 BSC M 0 8 0 8
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED
0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE –W–.
____
S
U0.15 (0.006) T
2X L/2
S
U
M
0.10 (0.004) V
S
T
L
–U–
SEATING PLANE
0.10 (0.004)
–T–
SECTION N–N
DETAIL E
J
J1
K
K1
DETAIL E
F
M
–W–
0.25 (0.010)
8
14
7
1
PIN 1 IDENT.
H
G
A
D
C
B
S
U0.15 (0.006) T
–V–
14X REFK
N
N
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