Datasheet MC54HCT145AJ, MC74HCT145ASD, MC74HCT145ADT, MC74HCT145ADW, MC74HCT145AN Datasheet (Motorola)

Page 1

SEMICONDUCTOR TECHNICAL DATA
3–1
REV 7
Motorola, Inc. 1997
2/97
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High–Performance Silicon–Gate CMOS
The MC54/74HCT245A is identical in pinout to the LS245. This device may be used as a level converter for interfacing TTL or NMOS outputs to High Speed CMOS inputs.
The MC54/74HCT245A is a 3–state noninverting transceiver that is used for 2–way asynchronous communication between data buses. The device has an active–low Output Enable pin, which is used to place the I/O ports into high–impedance states. The Direction control determines whether data flows from A to B or from B to A.
Output Drive Capability: 15 LSTTL Loads
TTL/NMOS Compatible Input Levels
Outputs Directly Interface to CMOS, NMOS and TTL
Operating Voltage Range: 4.5 to 5.5 V
Low Input Current: 1.0 µA
In Compliance with the Requirements Defined by JEDEC Standard
No. 7A
Chip Complexity: 304 FETs or 76 Equivalent Gates
LOGIC DIAGRAM
A
DATA
PORT
A8
A7
A6
A5
A3 A4
A2
A1
9
8
7
6
5
4
3
2
DIRECTION
OUTPUT ENABLE
1 19
PIN 20 = V
CC
PIN 10 = GND
18 17 16 15 14 13 12 11
B1 B2 B3 B4 B5 B6 B7 B8
B
DATA
PORT
ООООООО
Î
Design Criteria
Î
Î
Value
Î
Î
Units
Internal Gate Count*
76
ea
Internal Gate Propagation Delay
1.0
ns
ООООООО
Internal Gate Power Dissipation
Î
5.0εW
ООООООО
Î
Speed Power Product
Î
Î
0.005
Î
Î
pJ
*Equivalent to a two–input NAND gate.
FUNCTION TABLE
Control Inputs
Output Enable
Direction
Operation
L L Data Transmitted from Bus B to Bus A L H Data Transmitted from Bus A to Bus B H X Buses Isolated (High–Impedance State)
X = Don’t Care

PIN ASSIGNMENT
A5
A3
A2
A1
DIRECTION
GND
A8
A7
A6
A4 5
4
3
2
1
10
9
8
7
6
14
15
16
17
18
19
20
11
12
13
B3
B2
B1
OUTPUT ENABLE
V
CC
B8
B7
B6
B5
B4
DW SUFFIX
SOIC PACKAGE
CASE 751D–04
N SUFFIX
PLASTIC PACKAGE
CASE 738–03
ORDERING INFORMATION
MC54HCTXXXAJ MC74HCTXXXAN MC74HCTXXXADW MC74HCTXXXASD MC74HCTXXXADT
Ceramic Plastic SOIC SSOP TSSOP
DT SUFFIX
TSSOP PACKAGE
CASE 948E–02
J SUFFIX
CERAMIC PACKAGE
CASE 732–03
1
20
1
20
SD SUFFIX
SSOP PACKAGE
CASE 940C–03
1
20
1
20
1
20
Page 2
MC54/74HCT245A
MOTOROLA High–Speed CMOS Logic Data
DL129 — Rev 6
3–2
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
V
CC
DC Supply Voltage (Referenced to GND)
– 0.5 to + 7.0
V
V
in
DC Input Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
V
out
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
I
in
DC Input Current, per Pin
± 20
mA
I
out
DC Output Current, per Pin
± 35
mA
I
CC
DC Supply Current, VCC and GND Pins
± 75
mA
Î
Î
Î
P
D
ОООООООООООО
Î
ОООООООООООО
Power Dissipation in Still Air, Plastic or Ceramic DIP†
SOIC Package†
SSOP or TSSOP Package†
ÎÎÎÎ
Î
ÎÎÎÎ
750 500 450
Î
Î
Î
mW
Î
T
stg
ОООООООООООО
Storage Temperature
ÎÎÎÎ
– 65 to + 150
Î
_
C
Î
Î
Î
Î
T
L
ОООООООООООО
Î
ОООООООООООО
Î
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP, SOIC, SSOP or TSSOP Package)
(Ceramic DIP)
ÎÎÎÎ
Î
ÎÎÎÎ
Î
260 300
Î
Î
Î
Î
_
C
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
Ceramic DIP: – 10 mW/_C from 100_ to 125_C SOIC Package: – 7 mW/_C from 65_ to 125_C SSOP or TSSOP Package: – 6.1 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
V
CC
DC Supply Voltage (Referenced to GND)
4.5
5.5
V
Vin, V
out
DC Input Voltage, Output Voltage (Referenced to GND)
0
V
CC
V
T
A
Operating Temperature, All Package Types
– 55
+ 125
_
C
tr, t
f
Input Rise and Fall Time (Figure 1)
0
500
ns
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
ÎÎ
Symbol
ООООООО
Parameter
ООООООО
Test Conditions
ÎÎ
V
CC
V
ÎÎ
– 55 to
25_C
ÎÎ
v
85_C
ÎÎ
v
125_C
Î
Unit
ÎÎ
Î
V
IH
ООООООО
Î
Minimum High–Level Input Voltage
ООООООО
Î
V
out
= 0.1 V or VCC – 0.1 V
|I
out
| v 20 µA
ÎÎ
Î
4.5
5.5
ÎÎ
2.0
2.0
ÎÎ
Î
2.0
2.0
ÎÎ
Î
2.0
2.0
Î
Î
V
ÎÎ
Î
V
IL
ООООООО
Î
Maximum Low–Level Input Voltage
ООООООО
Î
V
out
= 0.1 V or VCC – 0.1 V
|I
out
| v 20 µA
ÎÎ
Î
4.5
5.5
ÎÎ
0.8
0.8
ÎÎ
Î
0.8
0.8
ÎÎ
Î
0.8
0.8
Î
Î
V
ÎÎ
Î
V
OH
ООООООО
Î
Minimum High–Level Output Voltage
ООООООО
Î
Vin = VIH or V
IL
|I
out
| v 20 µA
ÎÎ
Î
4.5
5.5
ÎÎ
4.4
5.4
ÎÎ
Î
4.4
5.4
ÎÎ
Î
4.4
5.4
Î
Î
V
ÎÎÎОООООООÎООООООО
Î
Vin = VIH or V
IL
|I
out
| v 6.0 mA
ÎÎ
Î
4.5
ÎÎ
3.98
ÎÎ
Î
3.84
ÎÎ
Î
3.7
Î
Î
ÎÎ
Î
V
OL
ООООООО
Î
Maximum Low–Level Output Voltage
ООООООО
Î
Vin = VIH or V
IL
|I
out
| v 20 µA
ÎÎ
Î
4.5
5.5
ÎÎ
0.1
0.1
ÎÎ
Î
0.1
0.1
ÎÎ
Î
0.1
0.1
Î
Î
V
ÎÎÎОООООООÎООООООО
Î
Vin = VIH or V
IL
|I
out
| v 6.0 mA
ÎÎ
Î
4.5
ÎÎ
0.26
ÎÎ
Î
0.33
ÎÎ
Î
0.4
Î
Î
I
in
Maximum Input Leakage Current
Vin = VCC or GND, Pins 1 or 19
5.5
± 0.1
± 1.0
± 1.0
µA
This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high–impedance cir­cuit. For proper operation, Vin and V
out
should be constrained to the
range GND v (Vin or V
out
) v VCC.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open.
Page 3
MC54/74HCT245A
High–Speed CMOS Logic Data DL129 — Rev 6
3–3 MOTOROLA
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Unit
Guaranteed Limit
V
CC
V
Test Conditions
Parameter
Symbol
Unit
v
125_C
v
85_C
– 55 to
25_C
V
CC
V
Test Conditions
Parameter
Symbol
ÎÎ
Î
I
CC
ООООООО
Î
Maximum Quiescent Supply Current (per Package)
ООООООО
Î
Vin = VCC or GND I
out
= 0 µA
ÎÎ
Î
5.5
ÎÎ
4.0
ÎÎ
Î
40
ÎÎ
Î
160
Î
Î
µA
ÎÎ
Î
ÎÎ
Î
I
OZ
ООООООО
Î
ООООООО
Î
Maximum Three–State Leakage Current
ООООООО
Î
ООООООО
Î
Output in High–Impedance State
Vin = VIL or V
IH
V
out
= VCC or GND, I/O Pins
ÎÎ
Î
ÎÎ
Î
5.5
ÎÎ
ÎÎ
± 0.5
ÎÎ
Î
ÎÎ
Î
± 5.0
ÎÎ
Î
ÎÎ
Î
± 10
Î
Î
Î
Î
µA
I
CC
Additional Quiescent Supply
Vin = 2.4 V, Any One Input
=
–55_C
25_C to 125_C
ÎÎ
ООООООО
Current
ООООООО
V
i
n
=
V
CC
or
GND, Other Inputs
l
out
= 0 µA
ÎÎ
5.5
ÎÎÎ
2.9
ÎÎÎ
2.4
Î
mA
NOTE:Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
AC ELECTRICAL CHARACTERISTICS (V
CC
= 5.0 V ± 10%, CL = 50 pF, Input tr = tf = 6.0 ns)
Guaranteed Limit
ÎÎ
Î
Symbol
ООООООООООООООООО
Î
Parameter
ÎÎ
Î
– 55 to
25_C
ÎÎ
Î
v
85_C
ÎÎ
Î
v
125_C
Î
Î
Unit
t
PLH
,
t
PHL
Maximum Propagation Delay, A to B or B to A
(Figures 1 and 3)
22
28
33
ns
ÎÎ
Î
t
PLZ
,
t
PHZ
ООООООООООООООООО
Î
Maximum Propagation Delay, Output Enable to A or B
(Figures 2 and 4)
ÎÎ
Î
30
ÎÎ
Î
36
ÎÎ
Î
42
Î
Î
ns
ÎÎ
Î
t
PZL
,
t
PZH
ООООООООООООООООО
Î
Maximum Propagation Delay, Output Enable to A or 8
(Figures 2 and 4)
ÎÎ
Î
30
ÎÎ
Î
36
ÎÎ
Î
42
Î
Î
ns
t
TLH
,
t
THL
Maximum Output Transition Time. any Output
(Figures 1 and 3)
12
15
18
ns
C
in
Maximum Input Capacitance (Pin 1 or 19)
10
10
10
pF
C
out
Maximum Three–State I/O Capacitance, (I/O in High–Impedance State)
15
15
15
pF
NOTE:For propagation delays with loads other than 50 pF , and information on typical parametric values, see Chapter 2 of the Motorola High–
Speed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
C
PD
Power Dissipation Capacitance (Per Enabled Output)*
97
pF
*Used to determine the no–load dynamic power consumption: PD = CPD V
CC
2
f + ICC VCC. For load considerations, see Chapter 2 of the
Motorola High–Speed CMOS Data Book (DL129/D).
Page 4
MC54/74HCT245A
MOTOROLA High–Speed CMOS Logic Data
DL129 — Rev 6
3–4
SWITCHING W AVEFORMS
3.0 V
GND
t
f
t
r
INPUT
A OR B
OUTPUT
B OR A
0.3 V
1.3 V
2.7 V
10%
1.3 V
90%
t
TLH
t
PLH
t
PHL
t
THL
Figure 1.
OUTPUT
ENABLE
A OR B
A OR B
1.3 V
1.3 V
1.3 V
90%
10%
t
PZLtPLZ
t
PZHtPHZ
3.0 V
GND HIGH
IMPEDANCE V
OL
V
OH
HIGH IMPEDANCE
3.0 V GND
1.3 V 1.3 V
Figure 2.
*Includes all probe and jig capacitance
CL*
TEST POINT
DEVICE UNDER
TEST
OUTPUT
Figure 3.
*Includes all probe and jig capacitance
CL*
TEST POINT
DEVICE UNDER
TEST
OUTPUT
Figure 4. Test Circuit
CONNECT TO VCC WHEN
TESTING t
PLZ
AND t
PZL
.
CONNECT TO GND WHEN
TESTING t
PHZ
AND t
PZH
.
1 k
DIRECTION
Page 5
MC54/74HCT245A
High–Speed CMOS Logic Data DL129 — Rev 6
3–5 MOTOROLA
EXPANDED LOGIC DIAGRAM
A
DATA
PORT
B
DATA
PORT
OUTPUT ENABLE
DIRECTION
A1
A2
A3
A4
A5
A6
A7
A8
2
3
4
5
6
7
8
9
19
1
B1
B2
B3
B4
B5
B6
B7
B8
18
17
16
15
14
13
12
11
Page 6
MC54/74HCT245A
MOTOROLA High–Speed CMOS Logic Data
DL129 — Rev 6
3–6
OUTLINE DIMENSIONS
J SUFFIX
CERAMIC PACKAGE
CASE 732–03
ISSUE E
N SUFFIX
PLASTIC PACKAGE
CASE 738–03
ISSUE E
DW SUFFIX
PLASTIC SOIC PACKAGE
CASE 751D–04
ISSUE E
NOTES:
1. LEADS WITHIN 0.25 (0.010) DIAMETER, TRUE POSITION AT SEATING PLANE, AT MAXIMUM MATERIAL CONDITION.
2. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL.
3. DIMENSIONS A AND B INCLUDE MENISCUS.
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A 23.88 25.15 0.940 0.990 B 6.60 7.49 0.260 0.295 C 3.81 5.08 0.150 0.200 D 0.38 0.56 0.015 0.022 F 1.40 1.65 0.055 0.065 G 2.54 BSC 0.100 BSC H 0.51 1.27 0.020 0.050 J 0.20 0.30 0.008 0.012 K 3.18 4.06 0.125 0.160 L 7.62 BSC 0.300 BSC M 0 15 0 15 N 0.25 1.02 0.010 0.040
____
A
20
110
11
B
F
C
SEATING PLANE
D
H
G
K
N
J
M
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD FLASH.
M
L
J
20 PL
M
B
M
0.25 (0.010) T
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 25.66 27.171.010 1.070 B 6.10 6.600.240 0.260 C 3.81 4.570.150 0.180 D 0.39 0.550.015 0.022
G 2.54 BSC0.100 BSC J 0.21 0.380.008 0.015 K 2.80 3.550.110 0.140 L 7.62 BSC0.300 BSC M 0 15 0 15 N 0.51 1.010.020 0.040
____
E
1.27 1.770.050 0.070
1
11
10
20
–A–
SEATING PLANE
K
N
FG
D
20 PL
–T–
M
A
M
0.25 (0.010) T
E
B
C
F
1.27 BSC0.050 BSC
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.150 (0.006) PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.13 (0.005) TOTAL IN EXCESS OF D DIMENSION AT MAXIMUM MATERIAL CONDITION.
–A–
–B–
20
1
11
10
S
A
M
0.010 (0.25) B
S
T
D20X
M
B
M
0.010 (0.25)
P10X
J
F
G
18X
K
C
–T–
SEATING PLANE
M
R
X 45
_
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A 12.65 12.95 0.499 0.510 B 7.40 7.60 0.292 0.299 C 2.35 2.65 0.093 0.104 D 0.35 0.49 0.014 0.019 F 0.50 0.90 0.020 0.035 G 1.27 BSC 0.050 BSC J 0.25 0.32 0.010 0.012 K 0.10 0.25 0.004 0.009 M 0 7 0 7 P 10.05 10.55 0.395 0.415 R 0.25 0.75 0.010 0.029
__
__
Page 7
MC54/74HCT245A
High–Speed CMOS Logic Data DL129 — Rev 6
3–7 MOTOROLA
OUTLINE DIMENSIONS
DT SUFFIX
PLASTIC TSSOP PACKAGE
CASE 948E–02
ISSUE A
DIMAMIN MAX MIN MAX
INCHES
6.60 0.260
MILLIMETERS
B 4.30 4.50 0.169 0.177 C 1.20 0.047 D 0.05 0.15 0.002 0.006 F 0.50 0.75 0.020 0.030
G 0.65 BSC 0.026 BSC
H 0.27 0.37 0.011 0.015 J 0.09 0.20 0.004 0.008
J1 0.09 0.16 0.004 0.006
K 0.19 0.30 0.007 0.012
K1 0.19 0.25 0.007 0.010
L 6.40 BSC 0.252 BSC
M 0 8 0 8
____
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE –W–.
110
1120
PIN 1 IDENT
A
B
–T–
0.100 (0.004)
C
D
G
H
SECTION N–N
K
K1
JJ1
N
N
M
F
–W–
SEATING PLANE
–V–
–U–
S
U
M
0.10 (0.004) V
S
T
20X REFK
L
L/2
2X
S
U0.15 (0.006) T
DETAIL E
0.25 (0.010)
DETAIL E
6.40 0.252 ––– –––
S
U0.15 (0.006) T
SD SUFFIX
PLASTIC SSOP PACKAGE
CASE 940C–03
ISSUE B
20 11
101
H
A
B
F
M
K20X REF
S
U
M
0.12 (0.005) V
S
T
L
L/2
PIN 1 IDENT
S
U
M
0.20 (0.008) T
–V–
–U–
D
C
0.076 (0.003)
G
–T–
SEATING PLANE
DETAIL E
N
N
0.25 (0.010)
K
J
J1
K1
SECTION N–N
DIMAMIN MAX MIN MAX
INCHES
7.07 7.33 0.278 0.288
MILLIMETERS
B 5.20 5.38 0.205 0.212 C 1.73 1.99 0.068 0.078 D 0.05 0.21 0.002 0.008 F 0.63 0.95 0.024 0.037 G 0.65 BSC 0.026 BSC H 0.59 0.75 0.023 0.030 J 0.09 0.20 0.003 0.008
J1 0.09 0.16 0.003 0.006
K 0.25 0.38 0.010 0.015
K1 0.25 0.33 0.010 0.013
____
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.15 (0.006) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION/INTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.13 (0.005) TOTAL IN EXCESS OF K DIMENSION AT MAXIMUM MATERIAL CONDITION. DAMBAR INTRUSION SHALL NOT REDUCE DIMENSION K BY MORE THAN 0.07 (0.002) AT LEAST MATERIAL CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE –W–.
L 7.65 7.90 0.301 0.311
M 0 8 0 8
DETAIL E
–W–
Page 8
MC54/74HCT245A
MOTOROLA High–Speed CMOS Logic Data
DL129 — Rev 6
3–8
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USA/EUROPE /Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center,
P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 81–3–3521–8315
Mfax: RMFAX0@email.sps.mot.com – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
– US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
INTERNET: http://www.mot.com/SPS/
MC74HCT245A/D
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