
SEMICONDUCTOR TECHNICAL DATA
3–1
REV 6
Motorola, Inc. 1995
10/95
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High–Performance Silicon–Gate CMOS
The MC54/74HC589 is similar in function to the HC597, which is not a
3–state device. The device i nputs are compatible with standard CMOS
outputs, with pullup resistors, they are compatible with LSTTL outputs.
This device consists of an 8–bit storage latch which feeds parallel data to
an 8–bit shift register. Data can also be loaded serially (see Function Table).
The shift register output, QH, is a three–state output, allowing this device to
be used in bus–oriented systems.
The HC589 directly interfaces with the Motorola SPI serial data port on
CMOS MPUs and MCUs.
• Output Drive Capability: 15 LSTTL Loads
• Outputs Directly Interface to CMOS, NMOS, and TTL
• Operating Voltage Range: 2 to 6 V
• Low Input Current: 1 µA
• High Noise Immunity Characteristic of CMOS Devices
• In Compliance with the Requirements Defined by JEDEC Standard
No. 7A
• Chip Complexity: 526 FETs or 131.5 Equivalent Gates
LOGIC DIAGRAM
SERIAL
DATA
INPUT
14
15
1
2
3
4
5
6
7
12
11
13
10
S
A
A
B
C
D
E
F
G
H
LATCH CLOCK
SHIFT CLOCK
SERIAL SHIFT/
PARALLEL LOAD
OUTPUT ENABLE
PARALLEL
DATA
INPUTS
DATA
LATCH
SHIFT
REGISTER
VCC = PIN 16
GND = PIN 8
9
Q
H
SERIAL
DATA
OUTPUT
PIN ASSIGNMENT
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
LATCH CLOCK
SERIAL SHIFT/
PARALLEL LOAD
S
A
A
V
CC
Q
H
OUTPUT ENABLE
SHIFT CLOCK
E
D
C
B
GND
H
G
F
D SUFFIX
SOIC PACKAGE
CASE 751B–05
N SUFFIX
PLASTIC PACKAGE
CASE 648–08
ORDERING INFORMATION
MC54HCXXXJ
MC74HCXXXN
MC74HCXXXD
Ceramic
Plastic
SOIC
1
16
1
16
J SUFFIX
CERAMIC PACKAGE
CASE 620–10
1
16

MC54/74HC589
MOTOROLA High–Speed CMOS Logic Data
DL129 — Rev 6
3–2
DC Supply Voltage (Referenced to GND)
DC Input Voltage (Referenced to GND)
DC Output Voltage (Referenced to GND)
DC Input Current, per Pin
DC Output Current, per Pin
DC Supply Current, VCC and GND Pins
Power Dissipation in Still Air,Plastic or Ceramic DIP†
SOIC Package†
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
(Ceramic DIP)
_
C
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: –10 mW/_C from 65_ to 125_C
Ceramic DIP: –10 mW/_C from 100_ to 125_C
SOIC Package: –7 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
DC Supply Voltage (Referenced to GND)
DC Input Voltage, Output Voltage (Referenced to GND)
Operating Temperature, All Package Types
Input Rise and Fall Time VCC = 2.0 V
(Figure 1) VCC = 4.5 V
VCC = 6.0 V
ns
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Minimum High–Level Input
Voltage
V
out
= 0.1 V or VCC – 0.1 V
|I
out
| v 20 µA
Maximum Low–Level Input
Voltage
V
out
= 0.1 V or VCC – 0.1 V
|I
out
| v 20 µA
Vin = VIH or V
IL
|I
out
| v 20 µA
Vin = VIH or VIL|I
out
| v 6.0 mA
|I
out
| v 7.8 mA
Vin = V
IH
|I
out
| v 20 µA
Vin = VIH or VIL|I
out
| v 6.0 mA
|I
out
| v 7.8 mA
Maximum Input Leakage Current
Maximum Three–State Leakage
Current
Output in High–Impedance State
Vin = VIL or V
IH
V
out
= VCC or GND
Maximum Quiescent Supply
Current (per Package)
Vin = VCC or GND
I
out
= 0 µA
µA
NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance circuit. For proper operation, Vin and
V
out
should be constrained to the
range GND v (Vin or V
out
) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
V
OH
V
OL
Minimum High–Level Output
Voltage
Maximum Low–Level Output
Voltage
V
V

MC54/74HC589
High–Speed CMOS Logic Data
DL129 — Rev 6
3–3 MOTOROLA
AC ELECTRICAL CHARACTERISTICS (C
L
= 50 pF, Input tr = tf = 6 ns)
Maximum Clock Frequency (50% Duty Cycle)
(Figures 2 and 8)
Maximum Propagation Delay, Latch Clock to Q
H
(Figures 1 and 8)
Maximum Propagation Delay, Shift Clock to Q
H
(Figures 2 and 8)
Maximum Propagation Delay, Serial Shift/Parallel Load to Q
H
(Figures 4 and 8)
Maximum Propagation Delay, Output Enable to Q
H
(Figures 3 and 9)
Maximum Propagation Delay, Output Enable to Q
H
(Figures 3 and 9)
Maximum Output Transition Time, Any Output
(Figures 1 and 8)
Maximum Input Capacitance
Maximum Three–State Output Capacitance (Output in
High–Impedance State)
pF
NOTES:
1. For propagation delays with loads other than 50 pF, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
2. Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
*Used to determine the no–load dynamic power consumption: PD = CPD V
CC
2
f + ICC VCC. For load considerations, see Chapter 2 of the
Motorola High–Speed CMOS Data Book (DL129/D).
C
PD
Power Dissipation Capacitance (Per Package)*
pF

MC54/74HC589
MOTOROLA High–Speed CMOS Logic Data
DL129 — Rev 6
3–4
TIMING REQUIREMENTS (Input t
r
= tf = 6 ns)
Minimum Setup Time, A–H to Latch Clock
(Figure 5)
Minimum Setup Time, Serial Data Input SA to Shift Clock
(Figure 6)
Minimum Setup Time, Serial Shift/Parallel Load to Shift Clock
(Figure 7)
Minimum Hold Time, Latch Clock to A–H
(Figure 5)
Minimum Hold Time, Shift Clock to Serial Data Input S
A
(Figure 6)
Minimum Pulse Width, Shift Clock
(Figure 2)
Minimum Pulse Width, Latch Clock
(Figure 1)
Minimum Pulse Width, Serial Shift/Parallel Load
(Figure 4)
Maximum Input Rise and Fall Times
(Figure 1)
ns
NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
FUNCTION TABLE
Inputs Resulting Function
Output
Enable
Serial Shift/
Parallel Load
Latch
Clock
Shift
Clock
Serial
Input
S
A
Parallel
Inputs
A–H
Data
Latch
Contents
Shift
Register
Contents
Output
Q
H
Force output into high
impedance state
H X X X X X X X Z
Load parallel data into
data latch
L H L, H, X a–h a–h U U
Transfer latch contents to
shift register
L L L, H, X X X U LRN → SR
N
LR
H
Contents of input latch
and shift register are
unchanged
L H L, H, L, H, X X U U U
Load parallel data into
data latch and shift
register
L L X X a–h a–h a–h h
Shift serial data into shift
register
L H X D X * SRA = D,
SRN → SR
N+1
SRG → SR
H
Load parallel data in data
latch and shift serial data
into shift register
L H D a–h a–h SRA = D,
SRN → SR
N+1
SRG → SR
H
LR = latch register contents U = remains unchanged
SR = shift register contents X = don’t care
a–h = data at parallel data inputs A–H Z = high impedance
D = data (L, H) at serial data input S
A
* = depends on Latch Clock input

MC54/74HC589
High–Speed CMOS Logic Data
DL129 — Rev 6
3–5 MOTOROLA
SWITCHING WAVEFORMS
Figure 1. (Serial Shift/Parallel Load = L) Figure 2. (Serial Shift/Parallel Load = H)
LATCH CLOCK
Q
H
t
r
t
f
V
CC
GND
90%
50%
10%
t
PLH
t
PHL
t
TLH
t
THL
t
w
SHIFT CLOCK
Q
H
V
CC
GND
50%
50%
t
PLH
t
PHL
1/f
max
90%
50%
10%
t
w
Figure 3.
Q
H
Q
H
50%
50%
90%
10%
t
PZL
t
PLZ
t
PZHtPHZ
V
CC
GND
HIGH
IMPEDANCE
V
OL
V
OH
HIGH
IMPEDANCE
OUTPUT
ENABLE
50%
SERIAL SHIFT/
PARALLEL LOAD
Q
H
50%
t
PLH
50%
V
CC
GND
t
PHL
50%
t
w
Figure 4.
A–H
50%
50%
LATCH CLOCK
V
CC
GND
*Includes all probe and jig capacitance
CL*
TEST POINT
DEVICE
UNDER
TEST
OUTPUT
DATA VALID
t
su
t
h
S
A
50%
50%
SHIFT CLOCK
V
CC
GND
DATA VALID
t
su
t
h
SERIAL SHIFT/
PARALLEL LOAD
50%
50%
SHIFT CLOCK
V
CC
GND
t
su
Figure 5. Figure 6.
Figure 7. Figure 8. Test Circuit

MC54/74HC589
MOTOROLA High–Speed CMOS Logic Data
DL129 — Rev 6
3–6
TEST CIRCUIT
Figure 9.
*Includes all probe and jig capacitance
CL*
TEST POINT
DEVICE
UNDER
TEST
OUTPUT
CONNECT TO VCC WHEN
TESTING t
PLZ
AND t
PZL
.
CONNECT TO GND WHEN
TESTING t
PHZ
AND t
PZH
.
1 k
Ω
PIN DESCRIPTIONS
DATA INPUTS
A, B, C, D, E, F, G, H (Pins 15, 1, 2, 3, 4, 5, 6, 7)
Parallel data inputs. Data on these inputs are stored in the
data latch on the rising edge of the Latch Clock input.
SA (Pin 14)
Serial data input. Data on this input is shifted into the shift
register on the rising edge of the Shift Clock input if Serial
Shift/Parallel Load
is high. Data on this input is ignored when
Serial Shift/Parallel Load
is low.
CONTROL INPUTS
Serial Shift/Parallel Load (Pin 13)
Shift register mode control. When a high level is applied to
this pin, the shift register is allowed to serially shift data.
When a low level is applied to this pin, the shift register accepts parallel data from the data latch.
Shift Clock (Pin 11)
Serial shift clock. A low–to–high transition on this input
shifts data on the serial data input into the shift register and
data in stage H is shifted out QH, being replaced by the data
previously stored in stage G.
Latch Clock (Pin 12)
Data latch clock. A l ow–to–high transition on t his input
loads the parallel data on inputs A–H into the data latch.
Output Enable (Pin 10)
Active–low output enable A high level applied to this pin
forces the QH output into the high impedance state. A low
level enables the output. This control d oes not affect the
state of the input latch or the shift register.
OUTPUT
QH (Pin 9)
Serial data output. This pin is the output from the last stage
of the shift register. This is a 3–state output.

MC54/74HC589
High–Speed CMOS Logic Data
DL129 — Rev 6
3–7 MOTOROLA
TIMING DIAGRAM
SHIFT CLOCK
SERIAL DATA
INPUT, S
A
OUTPUT ENABLE
SERIAL SHIFT/
PARALLEL LOAD
LATCH CLOCK
A
B
C
D
E
F
G
H
Q
H
PARALLEL
DATA
INPUTS
SERIAL SHIFT SERIAL SHIFT SERIAL SHIFT
SERIAL
SHIFT
RESET LATCH
AND SHIFT REGISTER
LOAD LATCH PARALLEL LOAD
SHIFT REGISTER
LOAD LATCH PARALLEL LOAD
SHIFT REGISTER
PARALLEL LOAD, LATCH
AND SHIFT REGISTER
HIGH IMPEDANCE
H L H H HL L
H
L H L L L
H
L
H H
L
L
L
L
L
L
L
L
H
L
H
L
H
H
L
H
L
L
L
L
L
L
L
H
L
L
L
L
H
H
L
H

MC54/74HC589
MOTOROLA High–Speed CMOS Logic Data
DL129 — Rev 6
3–8
PARALLEL
DATA
INPUTS
10
14
11
13
12
15
1
2
3
4
5
6
7
OUTPUT ENABLE
S
A
SHIFT CLOCK
SERIAL SHIFT/
PARALLEL LOAD
LATCH CLOCK
A
B
C
D
E
F
G
H
STAGE A
STAGE B
STAGE C*
STAGE D*
STAGE E*
STAGE F*
STAGE G*
STAGE H
V
CC
9
Q
H
DCQ
DCQ
D
C Q
S
R
D
C Q
S
R
DCQ
D
C Q
S
R
*NOTE: Stages C thru G (not shown in detail) are identical to stages A and B above.
LOGIC DETAIL

MC54/74HC589
High–Speed CMOS Logic Data
DL129 — Rev 6
3–9 MOTOROLA
OUTLINE DIMENSIONS
J SUFFIX
CERAMIC PACKAGE
CASE 620–10
ISSUE V
N SUFFIX
PLASTIC PACKAGE
CASE 648–08
ISSUE R
19.05
6.10
—
0.39
1.40
0.21
3.18
19.93
7.49
5.08
0.50
1.65
0.38
4.31
0
°
0.51
15
°
1.01
1.27 BSC
2.54 BSC
7.62 BSC
MIN MINMAX MAX
INCHES MILLIMETERS
DIM
0.750
0.240
—
0.015
0.055
0.008
0.125
0.785
0.295
0.200
0.020
0.065
0.015
0.170
0.050 BSC
0.100 BSC
0.300 BSC
A
B
C
D
E
F
G
J
K
L
M
N
0
°
0.020
15
°
0.040
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
4. DIM F MAY NARROW TO 0.76 (0.030) WHERE
THE LEAD ENTERS THE CERAMIC BODY.
1 8
916
–A
–
–B
–
C
K
N
G
E
F
D 16 PL
–T
–
SEATING
PLANE
M
L
J 16 PL
0.25 (0.010) T A
M
S
0.25 (0.010) T B
M
S
MIN MINMAX MAX
INCHES MILLIMETERS
DIM
A
B
C
D
F
G
H
J
K
L
M
S
18.80
6.35
3.69
0.39
1.02
0.21
2.80
7.50
0
°
0.51
19.55
6.85
4.44
0.53
1.77
0.38
3.30
7.74
10
°
1.01
0.740
0.250
0.145
0.015
0.040
0.008
0.110
0.295
0
°
0.020
0.770
0.270
0.175
0.021
0.070
0.015
0.130
0.305
10
°
0.040
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEADS WHEN
FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD FLASH.
5. ROUNDED CORNERS OPTIONAL.
2.54 BSC
1.27 BSC
0.100 BSC
0.050 BSC
–A
–
B
1 8
916
F
H
G
D
16 PL
S
C
–T
–
SEATING
PLANE
K
J
M
L
T A0.25 (0.010)
M M
0.25 (0.010) T B A
M
S S
MIN MINMAX MAX
MILLIMETERS INCHES
DIM
A
B
C
D
F
G
J
K
M
P
R
9.80
3.80
1.35
0.35
0.40
0.19
0.10
0
°
5.80
0.25
10.00
4.00
1.75
0.49
1.25
0.25
0.25
7
°
6.20
0.50
0.386
0.150
0.054
0.014
0.016
0.008
0.004
0
°
0.229
0.010
0.393
0.157
0.068
0.019
0.049
0.009
0.009
7
°
0.244
0.019
1.27 BSC 0.050 BSC
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
1
8
916
–A
–
–B
–
D 16 PL
K
C
G
–T
–
SEATING
PLANE
R X 45°
M
J
F
P 8 PL
0.25 (0.010) B
M M
D SUFFIX
PLASTIC SOIC PACKAGE
CASE 751B–05
ISSUE J

MC54/74HC589
MOTOROLA High–Speed CMOS Logic Data
DL129 — Rev 6
3–10
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MC54/74HC589/D
*MC54/74HC589/D*
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