Datasheet MC54HC354J, MC74HC354N Datasheet (Motorola)

Page 1

SEMICONDUCTOR TECHNICAL DATA
1
REV 7
Motorola, Inc. 1995
10/95
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High–Performance Silicon–Gate CMOS
The MC54/74HC354 is identical in pinout to the LS354. The device inputs are compatible with Standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs.
The HC354 selects one of eight latched binary Data Inputs, as deter­mined by the Address Inputs. The information at the Data Inputs is stored in the transparent 8–bit Data Latch when the Data–Latch Enable pin is held high. The Address information may be stored in the transparent Address Latch, which is enabled by the active–high Address–Enable pin.
The device outputs are placed in high–impedance states when Output Enable 1 is high, Output Enable 2 is high, or Output Enable 3 is low.
The HC354 has a clocked Data Latch that is not transparent.
Output Drive Capability: 15 LSTTL Loads
Outputs Directly Interface to CMOS, NMOS and TTL
Operating Voltage Range: 2 to 6V
Low Input Current: 1µA
High Noise Immunity Characteristic of CMOS Devices
In Compliance With the JEDEC Standard No. 7A Requirements
Chip Complexity: 326 FETs or 81.5 Equivalent Gates
LOGIC DIAGRAM
D0
8
D1
7
D2
6
D3
5
D4
4
D5
3
D6
2
D7
1
8–BIT DATA
LATCH (TRANS– PARENT)
8–BIT
MULTI–
PLEXER
DATA
INPUTS
3–STATE OUTPUT
CONTROL
Y
19
Y
18
3–STATE DATA OUTPUTS
DATA–LATCH
ENABLE
9
A0
14
A1
13
A2
12
ADDRESS
INPUTS
ADDRESS–LATCH
ENABLE
11
OE1
15
OE2
16
OE3
17
OUTPUT
ENABLES
ADDRESS
LATCH (TRANS– PARENT)
PIN 20 = V
CC
PIN 10 = GND

201 192 183 174
V
CC
D7
165 156 147 138
129 1110
YD6 Y
D5
OE3D4 OE2D3 OE1D2 A0D1 A1D0 A2
Data–Latch
Enable
Address–Latch Enable
GND
Pinout: 20–Lead Package (Top View)
DW SUFFIX
SOIC PACKAGE
CASE 751D–04
N SUFFIX
PLASTIC PACKAGE
CASE 738–03
ORDERING INFORMATION
MC54HCXXXJ MC74HCXXXN MC74HCXXXDW
Ceramic Plastic SOIC
J SUFFIX
CERAMIC PACKAGE
CASE 732–03
1
20
1
20
1
20
Page 2
MC54/74HC354
MOTOROLA High–Speed CMOS Logic Data
DL129 — Rev 6
2
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
V
CC
DC Supply Voltage (Referenced to GND)
– 0.5 to + 7.0
V
V
in
DC Input Voltage (Referenced to GND)
– 1.5 to VCC + 1.5
V
V
out
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
I
in
DC Input Current, per Pin
± 20
mA
I
out
DC Output Current, per Pin
± 35
mA
I
CC
DC Supply Current, VCC and GND Pins
± 75
mA
P
D
Power Dissipation in Still Air,Plastic or Ceramic DIP†
SOIC Package†
750 500
mW
T
stg
Storage Temperature Range
– 65 to + 150
_
C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds
Plastic DIP or SOIC Package
Ceramic DIP
260 300
_
C
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
Ceramic DIP: – 10 mW/_C from 100_ to 125_C SOIC Package: – 7 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
V
CC
DC Supply Voltage (Referenced to GND)
2.0
6.0
V
Vin, V
out
DC Input Voltage, Output Voltage (Referenced to GND)
0
V
CC
V
T
A
Operating Temperature Range, All Package Types
– 55
+ 125
_
C
tr, t
f
Input Rise/Fall Time VCC = 2.0 V
(Figure 1) VCC = 4.5 V
VCC = 6.0 V
0 0 0
1000
500 400
ns
DC CHARACTERISTICS (Voltages Referenced to GND)
V
Guaranteed Limit
Symbol
Parameter
Condition
V
CC V
–55 to 25°C 85°C 125°C
Unit
V
IH
Minimum High–Level Input Voltage V
out
= 0.1V or VCC –0.1V
|I
out
| 20µA
2.0
4.5
6.0
1.50
3.15
4.20
1.50
3.15
4.20
1.50
3.15
4.20
V
V
IL
Maximum Low–Level Input Voltage V
out
= 0.1V or VCC – 0.1V
|I
out
| 20µA
2.0
4.5
6.0
0.3
0.9
1.2
0.3
0.9
1.2
0.3
0.9
1.2
V
V
OH
Minimum High–Level Output Voltage
Vin = VIH or V
IL
|I
out
| 20µA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
Vin =VIH or V
IL
|I
out
| 6.0mA
|I
out
| 7.8mA
4.5
6.0
3.98
5.48
3.84
5.34
3.70
5.20
V
OL
Maximum Low–Level Output Voltage
Vin = VIH or V
IL
|I
out
| 20µA
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
Vin = VIH or V
IL
|I
out
| 6.0mA
|I
out
| 7.8mA
4.5
6.0
0.26
0.26
0.33
0.33
0.40
0.40
I
in
Maximum Input Leakage Current Vin = VCC or GND 6.0 ±0.1 ±1.0 ±1.0 µA
This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high–impedance cir­cuit. For proper operation, Vin and V
out
should be constrained to the
range GND v (Vin or V
out
) v VCC.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open.
Page 3
MC54/74HC354
High–Speed CMOS Logic Data DL129 — Rev 6
3 MOTOROLA
DC CHARACTERISTICS (Voltages Referenced to GND)
Symbol Unit
Guaranteed Limit
V
CC V
ConditionParameter
Symbol Unit≤125°C≤85°C–55 to 25°C
V
CC V
ConditionParameter
I
OZ
Maximum Three–State Leakage Current
Output in High–Impedance State Vin = VIL or V
IH
V
out
= VCC or GND
6.0 ±0.5 ±5.0 ±10.0 µA
I
CC
Maximum Quiescent Supply Current (per Package)
Vin = VCC or GND I
out
= 0µA
6.0 8 80 160 µA
NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
AC CHARACTERISTICS (C
L
= 50 pF, Input tr = tf = 6 ns)
Guaranteed Limit
Symbol
Parameter
V
CC V
–55 to 25°C ≤85°C 125°C
Unit
t
PLH
,
t
PHL
Maximum Propagation Delay, D0–D7 to Y or Y (Figures 2 and 6)
2.0
4.5
6.0
210
42 36
265
53 45
315
63 54
ns
t
PLH
,
t
PHL
Maximum Propagation Delay, Data–Latch Enable to Y or Y (Figures 3 and 6)
2.0
4.5
6.0
260
52 44
325
65 55
390
78 66
ns
t
PLH
,
t
PHL
Maximum Propagation Delay, A0–A2 to Y or Y (Figures 2 and 6)
2.0
4.5
6.0
270
54 46
340
68 58
405
81 69
ns
t
PLH
,
t
PHL
Maximum Propagation Delay, Address–Latch Enable to Y or Y (Figures 3 and 6)
2.0
4.5
6.0
270
54 46
340
68 58
405
81 69
ns
t
PLZ
,
t
PHZ
Maximum Propagation Delay, OE1–OE3 to Y or Y (Figures 4 and 7)
2.0
4.5
6.0
160
32 27
200
40 34
240
48 41
ns
t
PZL
,
t
PZH
Maximum Propagation Delay, OE1–OE3 to Y or Y (Figures 4 and 7)
2.0
4.5
6.0
125
25 21
155
31 26
190
38 32
ns
t
TLH
,
t
THL
Maximum Output Transition Time, Any Output (Figures 1 and 6)
2.0
4.5
6.0
60 12 10
75 15 13
90 18 15
ns
C
in
Maximum Input Capacitance 10 10 10 pF
C
out
Maximum Three–State Output Capacitance (Output in High Impedance State)
15 15 15 pF
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the Motorola High–
Speed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
C
PD
Power Dissipation Capacitance (Per Package)*
48
pF
*Used to determine the no–load dynamic power consumption: PD = CPD V
CC
2
f + ICC VCC. For load considerations, see Chapter 2 of the
Motorola High–Speed CMOS Data Book (DL129/D).
Page 4
MC54/74HC354
MOTOROLA High–Speed CMOS Logic Data
DL129 — Rev 6
4
PIN DESCRIPTIONS
D0–D7 (Pins 8–1) DATA INPUTS
These eight data bits are stored in a transparent latch when the Data–Latch Enable pin is active (high). Once enabled, changing inputs will not change the contents of the latch.
A0, A1, A2 (Pins 14,13,12) ADDRESS INPUTS
Selects which data bit stored in the Data Latch is routed to the outputs Y and Y
.
DATA–LATCH ENABLE (Pin 9)
The latch is transparent to D0–D7 when enable is inactive (low). The Data–Latch contents are unaffected when enable is held active (high).
ADDRESS–LATCH ENABLE (Pin 11)
The latch is transparent to A0, A1 and A2 when enable is inactive (low). The Address–Latch contents are unaffected when enable is held active (high).
OE1, OE2, OE3 (Pins 15,16,17) OUTPUT ENABLES
Any of the output enable pins inactive (OE1=High or OE2=High or OE3=Low) causes the outputs (Y and Y
) to be
in high–impedance states.
Y, Y
(Pins 19,18)
These 3–state outputs (when not 3–stated) represent the data bit in the Data Latch selected by the Address Latch.
TIMING REQUIREMENTS
(Input tr = tf = 6 ns)
V
Guaranteed Limit
Symbol Parameter
V
CC V
–55 to 25°C ≤85°C 125°C Unit
t
su
Minimum Setup Time, D0–D7 to Data–Latch Enable (Figure 5)
2.0
4.5
6.0
50 10
9
65 13 11
75 15 13
ns
t
su
Minimum Setup Time, A0–A2 to Address–Latch Enable (Figure 5)
2.0
4.5
6.0
50 10
9
65 13 11
75 15 13
ns
t
h
Minimum Hold Time, Data–Latch Enable to D0–D7 (Figure 5)
2.0
4.5
6.0
5 5 5
5 5 5
5 5 5
ns
t
h
Minimum Hold Time, Address–Latch Enable to A0–A2 (Figure 5)
2.0
4.5
6.0
5 5 5
5 5 5
5 5 5
ns
t
w
Minimum Pulse Width, Data–Latch Enable (Figure 3)
2.0
4.5
6.0
80 16 14
100
20 17
120
24 20
ns
t
w
Minimum Pulse Width, Address–Latch Enable (Figure 3)
2.0
4.5
6.0
80 16 14
100
20 17
120
24 20
ns
tr, t
f
Maximum Input Rise and Fall Times (Figure 1)
2.0
4.5
6.0
1000
500 400
1000
500 400
1000
500 400
ns
NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
Page 5
MC54/74HC354
High–Speed CMOS Logic Data DL129 — Rev 6
5 MOTOROLA
FUNCTION TABLE
Address Latch Contents # Inputs Outputs
A2 A1 A0
Data–Latch
Enable
OE1 OE2 OE3 Y Y Description
X X X
X X X
X X X
X X X
H X X
X H X
X X L
Z Z Z
Z Z Z
Outputs in High–Impedance States
L L L L H H H H
L
L H H L L H H
L H L H L H L H
L
L L H D0
D1 D2 D3 D4 D5 D6 D7
D0 D1 D2 D3 D4 D5 D6 D7
Data–Latch is Transparent
L L L L H H H H
L L H H L L H H
L H L H L H L H
H
L L H D0
n
D1
n
D2
n
D3
n
D4
n
D5
n
D6
n
D7
n
D0
n
D1
n
D2
n
D3
n
D4
n
D5
n
D6
n
D7
n
New Data is Stored in Data–Latch and is Not Alterable
# Represents bits in Address–Latch. See Address–Latch Enable pin description. X = Don’t Care; Z = High Impedance; D0–D7 = the data at inputs D0 through D7; D0n–D7n = the data present at inputs D0 through D7 when the
Data–Latch Enable pin was taken high.
SWITCHING WAVEFORMS
Figure 1. Figure 2.
t
r
Any Input
Y or Y
V
CC
GND
90%
10%
t
f
90%
10%
t
TLH
t
THL
D0–D7
A0–A2
Y or Y
V
CC
GND
t
PHL
t
PLH
50%
50%
VALID VALID
Figure 3.
Address–
Latch Enable
Y or Y
V
CC
GND
50%
t
PLH
t
PHL
t
w
50%
Figure 4.
OE1, OE2
Y or Y
V
CC
GND
t
PZH
50%
50%
Y or Y 50%
t
PHZ
t
PZLtPLZ
High Impedance
V
OL
V
OH
High Impedance
OE3
10%
90%
Page 6
MC54/74HC354
MOTOROLA High–Speed CMOS Logic Data
DL129 — Rev 6
6
V
CC
GND
50%
D0–D7
A0–A2
V
CC
GND
50%
t
h
t
su
Valid
Data–Latch
Enable
Figure 5.
CL*
*Includes all probe and jig capacitance
TEST
POINT
DEVICE UNDER
TEST
OUTPUT
TEST CIRCUITS
Figure 6. Figure 7.
CL*
*Includes all probe and jig capacitance
TEST
POINT
DEVICE UNDER
TEST
OUTPUT
1k
CONNECT TO VCC WHEN TESTING t
PLZ
AND t
PZL
. CONNECT TO GND WHEN TESTING t
PHZ
and t
PZH
.
Page 7
MC54/74HC354
High–Speed CMOS Logic Data DL129 — Rev 6
7 MOTOROLA
Figure 8. Expanded Logic Diagram
LE Q
D
OE1
15
OE2
16
A0
14
Q
LE Q
D
A1
13
Q
LE Q
D
A2
12
Q
LE Q
D
D0
8
LE Q
D
D1
7
LE Q
D
D2
6
LE Q
D
D3
5
LE Q
D
D4
4
LE Q
D
D5
3
LE Q
D
D6
2
LE Q
D
D7
1
OE3
17
Address–
Latch Enable
11
Data–Latch
Enable
9
Y
19
Y
18
Output
Enables
Address
Inputs
Data
Inputs
3–State Data Outputs
Page 8
MC54/74HC354
MOTOROLA High–Speed CMOS Logic Data
DL129 — Rev 6
8
OUTLINE DIMENSIONS
J SUFFIX
CERAMIC PACKAGE
CASE 732–03
ISSUE E
N SUFFIX
PLASTIC PACKAGE
CASE 738–03
ISSUE E
DW SUFFIX
PLASTIC SOIC PACKAGE
CASE 751D–04
ISSUE E
NOTES:
1. LEADS WITHIN 0.25 (0.010) DIAMETER, TRUE POSITION AT SEATING PLANE, AT MAXIMUM MATERIAL CONDITION.
2. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL.
3. DIMENSIONS A AND B INCLUDE MENISCUS.
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A 23.88 25.15 0.940 0.990 B 6.60 7.49 0.260 0.295 C 3.81 5.08 0.150 0.200 D 0.38 0.56 0.015 0.022 F 1.40 1.65 0.055 0.065 G 2.54 BSC 0.100 BSC H 0.51 1.27 0.020 0.050 J 0.20 0.30 0.008 0.012 K 3.18 4.06 0.125 0.160 L 7.62 BSC 0.300 BSC M 0 15 0 15 N 0.25 1.02 0.010 0.040
_ _ _ _
A
20
1 10
11
B
F
C
SEATING PLANE
D
H
G
K
N
J
M
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD FLASH.
M
L
J
20 PL
M
B
M
0.25 (0.010) T
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 25.66 27.171.010 1.070 B 6.10 6.600.240 0.260 C 3.81 4.570.150 0.180 D 0.39 0.550.015 0.022
G 2.54 BSC0.100 BSC
J 0.21 0.380.008 0.015
K 2.80 3.550.110 0.140
L 7.62 BSC0.300 BSC M 0 15 0 15 N 0.51 1.010.020 0.040
_ __ _
E
1.27 1.770.050 0.070
1
11
10
20
–A–
SEATING PLANE
K
N
FG
D
20 PL
–T–
M
A
M
0.25 (0.010) T
E
B
C
F
1.27 BSC0.050 BSC
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.150 (0.006) PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.13 (0.005) TOTAL IN EXCESS OF D DIMENSION AT MAXIMUM MATERIAL CONDITION.
–A–
–B–
20
1
11
10
S
A
M
0.010 (0.25) B
S
T
D20X
M
B
M
0.010 (0.25)
P10X
J
F
G
18X
K
C
–T–
SEATING PLANE
M
R
X 45
_
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A 12.65 12.95 0.499 0.510 B 7.40 7.60 0.292 0.299 C 2.35 2.65 0.093 0.104 D 0.35 0.49 0.014 0.019
F 0.50 0.90 0.020 0.035
G 1.27 BSC 0.050 BSC
J 0.25 0.32 0.010 0.012 K 0.10 0.25 0.004 0.009 M 0 7 0 7 P 10.05 10.55 0.395 0.415 R 0.25 0.75 0.010 0.029
_ _
_ _
Page 9
MC54/74HC354
High–Speed CMOS Logic Data DL129 — Rev 6
9 MOTOROLA
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MC54/74HC354/D
*MC54/74HC354/D*
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