Page 1
SEMICONDUCTOR TECHNICAL DATA
1
REV 6
Motorola, Inc. 1995
10/95
High–Performance Silicon–Gate CMOS
The MC54/74HC245A is identical in pinout to the LS245. The device
inputs are compatible with standard CMOS outputs; with pullup resistors,
they are compatible with LSTTL outputs.
The HC245A is a 3–state noninverting transceiver that is used for 2–way
asynchronous communication between data buses. The device has an
active–low Output Enable pin, which is used to place the I/O ports into
high–impedance states. The Direction control determines whether data
flows from A to B or from B to A.
• Output Drive Capability: 15 LSTTL Loads
• Outputs Directly Interface to CMOS, NMOS, and TTL
• Operating Voltage Range: 2 to 6 V
• Low Input Current: 1 µA
• High Noise Immunity Characteristic of CMOS Devices
• In Compliance with the Requirements Defined by JEDEC Standard
No. 7A
• Chip Complexity: 308 FETs or 77 Equivalent Gates
LOGIC DIAGRAM
A
DATA
PORT
A8
A7
A6
A5
A3
A4
A2
A1
9
8
7
6
5
4
3
2
DIRECTION
OUTPUT ENABLE
1
19
PIN 10 = GND
PIN 20 = V
CC
18
17
16
15
14
13
12
11
B1
B2
B3
B4
B5
B6
B7
B8
B
DATA
PORT
FUNCTION TABLE
Control Inputs
Output
Enable
Direction
Operation
L L Data Transmitted from Bus B to Bus A
L H Data Transmitted from Bus A to Bus B
H X Buses Isolated (High–Impedance State)
X = don’t care
PIN ASSIGNMENT
A5
A3
A2
A1
DIRECTION
GND
A8
A7
A6
A4 5
4
3
2
1
10
9
8
7
6
14
15
16
17
18
19
20
11
12
13
B3
B2
B1
OUTPUT ENABLE
V
CC
B8
B7
B6
B5
B4
DW SUFFIX
SOIC PACKAGE
CASE 751D–04
N SUFFIX
PLASTIC PACKAGE
CASE 738–03
ORDERING INFORMATION
MC54HCXXXAJ
MC74HCXXXAN
MC74HCXXXADW
Ceramic
Plastic
SOIC
J SUFFIX
CERAMIC PACKAGE
CASE 732–03
1
20
1
20
1
20
Page 2
MC54/74HC245A
MOTOROLA High–Speed CMOS Logic Data
DL129 — Rev 6
2
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
V
CC
DC Supply Voltage (Referenced to GND)
– 0.5 to + 7.0
V
V
in
DC Input Voltage (Referenced to GND)
– 1.5 to VCC + 1.5
V
V
I/O
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
I
in
DC Input Current, per Pin
± 20
mA
I
I/O
DC Output Current, per Pin
± 35
mA
I
CC
DC Supply Current, VCC and GND Pins
± 75
mA
P
D
Power Dissipation in Still Air,Plastic or Ceramic DIP†
SOIC Package†
750
500
mW
T
stg
Storage Temperature
– 65 to + 150
_
C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
(Ceramic DIP)
260
300
_
C
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
Ceramic DIP: – 10 mW/_C from 100_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
V
CC
DC Supply Voltage (Referenced to GND)
2.0
6.0
V
Vin, V
out
DC Input Voltage, Output Voltage (Referenced to GND)
0
V
CC
V
T
A
Operating Temperature, All Package Types
– 55
+ 125
_
C
tr, t
f
Input Rise and Fall Time VCC = 2.0 V
(Figure 1) VCC = 4.5 V
VCC = 6.0 V
0
0
0
1000
500
400
ns
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Symbol
Parameter
Test Conditions
V
CC
V
– 55 to
25_C
v
85_Cv 125_C
Unit
V
IH
Minimum High–Level Input
Voltage
V
out
= 0.1 V or VCC – 0.1 V
|I
out
| v 20 µA
2.0
4.5
6.0
1.5
3.15
4.2
1.5
3.15
4.2
1.5
3.15
4.2
V
V
IL
Maximum Low–Level Input
Voltage
V
out
= 0.1 V or VCC – 0.1 V
|I
out
| v 20 µA
2.0
4.5
6.0
0.5
1.35
1.8
0.5
1.35
1.8
0.5
1.35
1.8
V
V
OH
Minimum High–Level Output
Voltage
Vin = VIH or V
IL
|I
out
| v 20 µA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
Vin = VIH or VIL|I
out
| v 6.0 mA
|I
out
| v 7.8 mA
4.5
6.0
3.98
5.48
3.84
5.34
3.70
5.20
V
OL
Maximum Low–Level Output
Voltage
Vin = VIH or V
IL
|I
out
| v 20 µA
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
Vin = VIH or VIL|I
out
| v 6.0 mA
|I
out
| v 7.8 mA
4.5
6.0
0.26
0.26
0.33
0.33
0.40
0.40
I
in
Maximum Input Leakage Current
Vin = VCC or GND, Pin 1 or 19
6.0
± 0.1
± 1.0
± 1.0
µA
I
OZ
Maximum Three–State
Leakage Current
Output in High–Impedance State
Vin = VIL or V
IH
V
out
= VCC or GND, I/O Pins
6.0
± 0.5
± 5.0
± 10
µA
I
CC
Maximum Quiescent Supply
Current (per Package)
Vin = VCC or GND
I
out
= 0 µA
6.0
4
40
160
µA
NOTE: Information on typical parametric values and high frequency or heavy load considerations can be found in Chapter 2 of the Motorola High–
Speed CMOS Data Book (DL129/D).
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance circuit. For proper operation, Vin and
V
out
should be constrained to the
range GND v (Vin or V
out
) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
Page 3
MC54/74HC245A
High–Speed CMOS Logic Data
DL129 — Rev 6
3 MOTOROLA
AC ELECTRICAL CHARACTERISTICS (C
L
= 50 pF, Input tr = tf = 6 ns)
Guaranteed Limit
Symbol
Parameter
V
CC
V
– 55 to
25_C
v
85_Cv 125_C
Unit
t
PLH
,
t
PHL
Maximum Propagation Delay, A to B, B to A
(Figures 1 and 3)
2.0
4.5
6.0
75
15
13
95
19
16
110
22
19
ns
t
PLZ
,
t
PHZ
Maximum Propagation Delay, Direction or Output Enable to A or B
(Figures 2 and 4)
2.0
4.5
6.0
110
22
19
140
28
24
165
33
28
ns
t
PZL
,
t
PZH
Maximum Propagation Delay, Output Enable to A or B
(Figures 2 and 4)
2.0
4.5
6.0
110
22
19
140
28
24
165
33
28
ns
t
TLH
,
t
THL
Maximum Output Transition Time, Any Output
(Figures 1 and 3)
2.0
4.5
6.0
60
12
10
75
15
13
90
18
15
ns
C
in
Maximum Input Capacitance (Pin 1 or Pin 19)
—
10
10
10
pF
C
out
Maximum Three–State I/O Capacitance
(I/O in High–Impedance State)
—
15
15
15
pF
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the Motorola High–
Speed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
C
PD
Power Dissipation Capacitance (Per Transceiver Channel)*
40
pF
*Used to determine the no–load dynamic power consumption: PD = CPD V
CC
2
f + ICC VCC. For load considerations, see Chapter 2 of the
Motorola High–Speed CMOS Data Book (DL129/D).
SWITCHING WAVEFORMS
V
CC
GND
t
f
t
r
INPUT
A OR B
OUTPUT
B OR A
10%
50%
90%
10%
50%
90%
t
TLH
t
PLH
t
PHL
t
THL
Figure 1.
OUTPUT
ENABLE
A OR B
A OR B
50%
50%
50%
90%
10%
t
PZL
t
PLZ
t
PZHtPHZ
V
CC
GND
HIGH
IMPEDANCE
V
OL
V
OH
HIGH
IMPEDANCE
V
CC
GND
50%
Figure 2.
DIRECTION
TEST CIRCUITS
*Includes all probe and jig capacitance
CL*
TEST POINT
DEVICE
UNDER
TEST
OUTPUT
Figure 3.
*Includes all probe and jig capacitance
CL*
TEST POINT
DEVICE
UNDER
TEST
OUTPUT
Figure 4.
CONNECT TO VCC WHEN
TESTING t
PLZ
AND t
PZL
.
CONNECT TO GND WHEN
TESTING t
PHZ
AND t
PZH
.
1 k
Ω
Page 4
MC54/74HC245A
MOTOROLA High–Speed CMOS Logic Data
DL129 — Rev 6
4
EXPANDED LOGIC DIAGRAM
A
DATA
PORT
B
DATA
PORT
OUTPUT ENABLE
DIRECTION
A1
A2
A3
A4
A5
A6
A7
A8
2
3
4
5
6
7
8
9
19
1
B1
B2
B3
B4
B5
B6
B7
B8
18
17
16
15
14
13
12
11
Page 5
MC54/74HC245A
High–Speed CMOS Logic Data
DL129 — Rev 6
5 MOTOROLA
OUTLINE DIMENSIONS
J SUFFIX
CERAMIC PACKAGE
CASE 732–03
ISSUE E
N SUFFIX
PLASTIC PACKAGE
CASE 738–03
ISSUE E
DW SUFFIX
PLASTIC SOIC PACKAGE
CASE 751D–04
ISSUE E
NOTES:
1. LEADS WITHIN 0.25 (0.010) DIAMETER, TRUE
POSITION AT SEATING PLANE, AT MAXIMUM
MATERIAL CONDITION.
2. DIMENSION L TO CENTER OF LEADS WHEN
FORMED PARALLEL.
3. DIMENSIONS A AND B INCLUDE MENISCUS.
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A 23.88 25.15 0.940 0.990
B 6.60 7.49 0.260 0.295
C 3.81 5.08 0.150 0.200
D 0.38 0.56 0.015 0.022
F 1.40 1.65 0.055 0.065
G 2.54 BSC 0.100 BSC
H 0.51 1.27 0.020 0.050
J 0.20 0.30 0.008 0.012
K 3.18 4.06 0.125 0.160
L 7.62 BSC 0.300 BSC
M 0 15 0 15
N 0.25 1.02 0.010 0.040
_ _ _ _
A
20
1 10
11
B
F
C
SEATING
PLANE
D
H
G
K
N
J
M
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD
FLASH.
M
L
J
20 PL
M
B
M
0.25 (0.010) T
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 25.66 27.171.010 1.070
B 6.10 6.600.240 0.260
C 3.81 4.570.150 0.180
D 0.39 0.550.015 0.022
G 2.54 BSC0.100 BSC
J 0.21 0.380.008 0.015
K 2.80 3.550.110 0.140
L 7.62 BSC0.300 BSC
M 0 15 0 15
N 0.51 1.010.020 0.040
_ __ _
E
1.27 1.770.050 0.070
1
11
10
20
–A–
SEATING
PLANE
K
N
FG
D
20 PL
–T–
M
A
M
0.25 (0.010) T
E
B
C
F
1.27 BSC0.050 BSC
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.150
(0.006) PER SIDE.
5. DIMENSION D DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.13
(0.005) TOTAL IN EXCESS OF D DIMENSION
AT MAXIMUM MATERIAL CONDITION.
–A–
–B–
20
1
11
10
S
A
M
0.010 (0.25) B
S
T
D20X
M
B
M
0.010 (0.25)
P10X
J
F
G
18X
K
C
–T–
SEATING
PLANE
M
R
X 45
_
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A 12.65 12.95 0.499 0.510
B 7.40 7.60 0.292 0.299
C 2.35 2.65 0.093 0.104
D 0.35 0.49 0.014 0.019
F 0.50 0.90 0.020 0.035
G 1.27 BSC 0.050 BSC
J 0.25 0.32 0.010 0.012
K 0.10 0.25 0.004 0.009
M 0 7 0 7
P 10.05 10.55 0.395 0.415
R 0.25 0.75 0.010 0.029
_ _
_ _
Page 6
MC54/74HC245A
MOTOROLA High–Speed CMOS Logic Data
DL129 — Rev 6
6
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MC54/74HC245A/D
*MC54/74HC245A/D*
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