Datasheet MC54HC174AJ, MC74HC174AD, MC74HC174AN Datasheet (Motorola)

Page 1

SEMICONDUCTOR TECHNICAL DATA
1
REV 6
Motorola, Inc. 1995
10/95
!      
High–Performance Silicon–Gate CMOS
The MC54/74HC174A is identical in pinout to the LS174. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs.
This device consists of six D flip–flops with common Clock and Reset inputs. Each flip–flop is loaded with a low–to–high transition of the Clock input. Reset is asynchronous and active–low.
Output Drive Capability: 10 LSTTL Loads
TTL NMOS Compatible Input Levels
Outputs Directly Interface to CMOS, NMOS, and TTL
Operating Voltage Range: 4.5 to 5.5 V
Low Input Current: 1.0 µA
In Compliance with the Requirements Defined by JEDEC Standard
No. 7A
Chip Complexity: 162 FETs or 40.5 Equivalent Gates
LOGIC DIAGRAM
PIN 16 = V
CC
PIN 8 = GND
3 4
6 11 13 14
2 5
7 10 12 15
D0 D1 D2 D3 D4 D5
Q0 Q1
Q2 Q3 Q4 Q5
CLOCK
9
RESET
1
DATA
INPUTS
NONINVERTING
OUTPUTS
Design Criteria
Value
Units
Internal Gate Count*
40.5
ea.
Internal Gate Propagation Delay
1.5
ns
Internal Gate Power Dissipation
5.0
µW
Speed Power Product
.0075
pJ
*Equivalent to a two–input NAND gate.

PIN ASSIGNMENT
FUNCTION TABLE
Inputs Output
Reset Clock D Q
L X X L H H H H L L H L X No Change H X No Change
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
Q4
D4
D5
Q5
V
CC
CLOCK
Q3
D3
D1
D0
Q0
RESET
GND
Q2
D2
Q1
D SUFFIX
SOIC PACKAGE
CASE 751B–05
N SUFFIX
PLASTIC PACKAGE
CASE 648–08
ORDERING INFORMATION
MC54HCXXXAJ MC74HCXXXAN MC74HCXXXAD
Ceramic Plastic SOIC
1
16
1
16
J SUFFIX
CERAMIC PACKAGE
CASE 620–10
1
16
Page 2
MC54/74HC174A
MOTOROLA High–Speed CMOS Logic Data
DL129 — Rev 6
2
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
V
CC
DC Supply Voltage (Referenced to GND)
– 0.5 to + 7.0
V
V
in
DC Input Voltage (Referenced to GND)
– 1.5 to VCC + 1.5
V
V
out
DC Output Voltage (Referenced to GND)
–0.5 to VCC + 0.5
V
I
in
DC Input Current, per Pin
± 20
mA
I
out
DC Output Current, per Pin
± 25
mA
I
CC
DC Supply Current, VCC and GND Pins
± 50
mA
P
D
Power Dissipation in Still Air,Plastic or Ceramic DIP†
SOIC Package†
750 500
mW
T
stg
Storage Temperature
– 65 to + 150
_
C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
(Ceramic DIP)
260 300
_
C
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
Ceramic DIP: – 10 mW/_C from 100_ to 125_C SOIC Package: – 7 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
V
CC
DC Supply Voltage (Referenced to GND)
2.0
6.0
V
Vin, V
out
DC Input Voltage, Output Voltage (Referenced to GND)
0
V
CC
V
T
A
Operating Temperature, All Package Types
– 55
+ 125
_
C
tr, t
f
Input Rise and Fall Time (Figure 1) VCC = 2.0 V
VCC = 4.5 V VCC = 6.0 V
0 0 0
1000
500 400
ns
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Symbol
Parameter
Test Conditions
V
CC V
– 55 to
25_C
v
85_Cv 125_C
Unit
V
IH
Minimum High–Level Input Voltage
V
out
= 0.1 V or VCC – 0.1 V
|I
out
| v 20 µA
2.0
4.5
6.0
1.5
3.15
4.2
1.5
3.15
4.2
1.5
3.15
4.2
V
V
IL
Maximum Low–Level Input Voltage
V
out
= 0.1 V or VCC – 0.1 V
|I
out
| v 20 µA
2.0
4.5
6.0
0.5
1.35
1.8
0.5
1.35
1.8
0.5
1.35
1.8
V
Vin = VIH or V
IL
|I
out
| v 20 µA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
Vin = VIH or V
IL
|I
out
| v 4.0 mA
|I
out
| v 5.2 mA
4.5
6.0
3.98
5.48
3.84
5.34
3.7
5.2
Vin = VIH or V
IL
|I
out
| v 20 µA
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
Vin = VIH or V
IL
|I
out
| v 4.0 mA
|I
out
| v 5.2 mA
4.5
6.0
0.26
0.26
0.33
0.33
0.4
0.4
This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high–impedance cir­cuit. For proper operation, Vin and V
out
should be constrained to the
range GND v (Vin or V
out
) v VCC.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open.
V
OH
V
OL
Minimum High–Level Output Voltage
Maximum Low–Level Output Voltage
V
V
Page 3
MC54/74HC174A
High–Speed CMOS Logic Data DL129 — Rev 6
3 MOTOROLA
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Unit
Guaranteed Limit
V
CC
V
Test Conditions
Parameter
Symbol
Unit
v
125_C
v
85_C
– 55 to
25_C
V
CC
V
Test Conditions
Parameter
Symbol
I
in
Maximum Input Leakage Current
Vin = VCC or GND
6.0
± 0.1
± 1.0
± 1.0
µA
I
CC
Maximum Quiescent Supply Current (per Package)
Vin = VCC or GND I
out
= 0 µA
6.0
4.0
40
160
µA
NOTES:
1. Information on typical parametric values along with high frequency or heavy load considerations, can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
2. Total Supply Current = ICC + SICC.
AC ELECTRICAL CHARACTERISTICS (C
L
= 50 pF, Input tr = tf = 6.0 ns)
Guaranteed Limit
Symbol
Parameter
V
CC V
– 55 to
25_C
v
85_Cv 125_C
Unit
f
max
Maximum Clock Frequency (50% Duty Cycle)
(Figures 1 and 4)
2.0
4.5
6.0
6.0 30 35
4.8 24 28
4.0 20 24
MHz
t
PLH
t
PHL
Maximum Propagation Delay, Clock to Q
(Figures 1 and 4)
2.0
4.5
6.0
110
22 19
140
28 24
165
33 28
ns
t
PLH
t
PHL
Maximum Propagation Delay, Reset to Q
(Figures 2 and 4)
2.0
4.5
6.0
110
21 19
140
28 24
160
32 27
ns
t
TLH
t
THL
Maximum Output Transition Time, Any Output
(Figures 1 and 4)
2.0
4.5
6.0
75 15 13
95 19 16
110
22 19
ns
C
in
Maximum Input Capacitance
10
10
10
pF
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the Motorola High–
Speed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
62
*Used to determine the no–load dynamic power consumption: PD = CPD V
CC
2
f + ICC VCC. For load considerations, see Chapter 2 of the
Motorola High–Speed CMOS Data Book (DL129/D).
TIMING REQUIREMENTS (C
L
= 50 pF, Input tr = tf = 6.0 ns)
ÎÎÎ
ÎÎÎ
ÎÎÎ
Guaranteed Limit
ÎÎÎ
ÎÎÎ
ÎÎÎ
V
– 55 to 25_C
v
85_C
v
125_C
Symbol
Parameter
ÎÎÎ
ÎÎÎ
ÎÎÎ
Fig.
V
CC V
Min
ÎÎ
ÎÎ
ÎÎ
Max
Min
Max
Min
Max
Unit
t
su
Minimum Setup Time, Data to Clock
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
3
2.0
4.5
6.0
50 10
9.0
ÎÎ
ÎÎ
ÎÎ
ÎÎ
65 13 11
75 15 13
ns
t
h
Minimum Hold Time, Clock to Data
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
3
2.0
4.5
6.0
5.0
5.0
5.0
ÎÎ
ÎÎ
ÎÎ
ÎÎ
5.0
5.0
5.0
5.0
5.0
5.0
ns
t
rec
Minimum Recovery Time, Reset Inactive to Clock
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
2
2.0
4.5
6.0
5.0
5.0
5.0
ÎÎ
ÎÎ
ÎÎ
ÎÎ
5.0
5.0
5.0
5.0
5.0
5.0
ns
t
w
Minimum Pulse Width, Clock
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
1
2.0
4.5
6.0
75 15 13
ÎÎ
ÎÎ
ÎÎ
ÎÎ
95 19 16
110
22 19
ns
t
w
Minimum Pulse Width, Reset
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
2
2.0
4.5
6.0
75 15 13
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
95 19 16
110
22 19
ns
tr, tfMaximum Input Rise and Fall Times
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
1
2.0
4.5
6.0
ÎÎ
ÎÎ
ÎÎ
ÎÎ
1000
500 400
1000
500 400
1000
500 400
ns
C
PD
Power Dissipation Capacitance (Per Enabled Output)*
pF
Page 4
MC54/74HC174A
MOTOROLA High–Speed CMOS Logic Data
DL129 — Rev 6
4
CLOCK
9
D0
3
RESET
1
D1
4
D2
6
D3
11
D4
13
D5
14
C
Q
D
R
2
5
7
10
12
15
Q0
Q1
Q2
Q3
Q4
Q5
EXPANDED LOGIC DIAGRAM
50%
V
CC
GND
V
CC
GND
50%
CLOCK
Q
RESET
t
PHL
Figure 1.
50%
DATA
CLOCK
V
CC
V
CC
GND
Figure 2.
VALID
GND
t
su
t
h
1/f
max
CLOCK
Q
t
r
t
f
V
CC
GND
90%
50%
10%
90%
50%
10%
t
PLH
t
PHL
t
TLH
t
THL
t
w
*Includes all probe and jig capacitance
CL*
TEST POINT
DEVICE UNDER
TEST
OUTPUT
Figure 3. Figure 4. Test Circuit
SWITCHING WAVEFORMS
C
Q
D
R
C
Q
D
R
C
Q
D
R
C
Q
D
R
C
Q
D
R
t
w
t
rec
50%
Page 5
MC54/74HC174A
High–Speed CMOS Logic Data DL129 — Rev 6
5 MOTOROLA
OUTLINE DIMENSIONS
J SUFFIX
CERAMIC PACKAGE
CASE 620–10
ISSUE V
N SUFFIX
PLASTIC PACKAGE
CASE 648–08
ISSUE R
19.05
6.10 —
0.39
1.40
0.21
3.18
19.93
7.49
5.08
0.50
1.65
0.38
4.31
0
°
0.51
15
°
1.01
1.27 BSC
2.54 BSC
7.62 BSC
MIN MINMAX MAX
INCHES MILLIMETERS
DIM
0.750
0.240 —
0.015
0.055
0.008
0.125
0.785
0.295
0.200
0.020
0.065
0.015
0.170
0.050 BSC
0.100 BSC
0.300 BSC
A B C D E F G J K L M N
0
°
0.020
15
°
0.040
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL.
4. DIM F MAY NARROW TO 0.76 (0.030) WHERE THE LEAD ENTERS THE CERAMIC BODY.
1 8
916
–A
–B
C
K
N
G
E
F
D 16 PL
–T
SEATING
PLANE
M
L
J 16 PL
0.25 (0.010) T A
M
S
0.25 (0.010) T B
M
S
MIN MINMAX MAX
INCHES MILLIMETERS
DIM
A B C D F
G
H J K L
M
S
18.80
6.35
3.69
0.39
1.02
0.21
2.80
7.50 0
°
0.51
19.55
6.85
4.44
0.53
1.77
0.38
3.30
7.74 10
°
1.01
0.740
0.250
0.145
0.015
0.040
0.008
0.110
0.295 0
°
0.020
0.770
0.270
0.175
0.021
0.070
0.015
0.130
0.305 10
°
0.040
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD FLASH.
5. ROUNDED CORNERS OPTIONAL.
2.54 BSC
1.27 BSC
0.100 BSC
0.050 BSC
–A
B
1 8
916
F
H
G
D
16 PL
S
C
–T
SEATING PLANE
K
J
M
L
T A0.25 (0.010)
M M
0.25 (0.010) T B A
M
S S
MIN MINMAX MAX
MILLIMETERS INCHES
DIM
A B C D F G J K M P R
9.80
3.80
1.35
0.35
0.40
0.19
0.10 0
°
5.80
0.25
10.00
4.00
1.75
0.49
1.25
0.25
0.25 7
°
6.20
0.50
0.386
0.150
0.054
0.014
0.016
0.008
0.004 0
°
0.229
0.010
0.393
0.157
0.068
0.019
0.049
0.009
0.009 7
°
0.244
0.019
1.27 BSC 0.050 BSC
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION.
1
8
916
–A
–B
D 16 PL
K
C
G
–T
SEATING
PLANE
R X 45°
M
J
F
P 8 PL
0.25 (0.010) B
M M
D SUFFIX
PLASTIC SOIC PACKAGE
CASE 751B–05
ISSUE J
Page 6
MC54/74HC174A
MOTOROLA High–Speed CMOS Logic Data
DL129 — Rev 6
6
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MC54/74HC174A/D
*MC54/74HC174A/D*
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