Page 1
5V UNDERVOLTAGE SENSING CIRCUIT
P RODUCTION DAT A SHEET
THE INFINITE POWER OF INNOVATION
Copyright © 1997
Rev. 1.5 11/97
FOR FURTHER INFORMATION CALL (714) 898-8121
11861 WESTERN AVENUE, GARDEN GROVE, CA. 92841
MC33164/MC34164
LIN DOC #:
33164
1
PACKAGE ORDER INFORMATION
T
A
(°C)
Plastic SOIC
8-pin
0 to 70 MC34164DM MC34164LP
-40 to 85 MC33164DM MC33164LP
DM
Plastic TO-92
3-pin
LP
DESCRIPTION
The MC33164 and the MC34164 are
micropower undervoltage sensing
circuits ideal for use in low-power
battery applications, computer
peripheral, consumer, appliance and
automotive equipment. The device
offers a 1.2V temperature compensated
bandgap reference, a precision
comparator with hysteresis and a high
KEY FEATURES
■ LOW STANDBY CURRENT
■ TEMPERATURE COMPENSATED BANDGAP
REFERENCE
■ PRECISION COMPARATOR WITH 50MV OF
HYSTERESIS
■ CLAMP DIODE FOR DISCHARGING DELAY
CAPACITOR
■ OUTPUT CURRENT SINK CAPABILITY FROM
7 TO 50MA
■ 1-10V INPUT SUPPLY RANGE
■ AVAILABLE IN 150MIL, 8-PIN SOIC AND
PLASTIC TO-92 PACKAGES
■ PIN-FOR-PIN COMPATIBLE WITH MC33164/
34164
Note: All surface-mount packages are available in Tape & Reel.
Append the letter "T" to part number. (i.e. MC34164DMT)
PRODUCT HIGHLIGHT
LOW-VOLTAGE MICROPROCESSOR RESET
APPLICATIONS
■ µPOWER RESET GENERATOR
■ 5V VOLTAGE MONITOR
■ BATTERY-LEVEL DETECTOR
current open collector output. This
device operates from 1 to 10V input
supply and drains <10µA in the nonfault condition and trip level of 4.33V.
Both devices are available in an
8-pin, 150mil SOIC package and a
plastic TO-92 package. The MC33164 is
rated from -40°C to 85°C and the
MC34164 from 0°C to 70°C.
POWER
SUPPLY
1.2 V
REF
MICROPROCESSOR
CIRCUIT
RESET
C
DLY
R
2
1
3
Page 2
5V U
NDERVOLTAGE SENSING CIRCUIT
MC33164/MC34164
PRODUCT DATABOOK 1996/1997
Copyright © 1997
Rev. 1.5 11/97
2
P
RODUCTION DATA SHEET
ABSOLUTE MAXIMUM RATINGS (Note 1)
Input Supply Voltage (VIN)............................................................................... -1V to 12V
RESET Output Voltage (V
OUT
) .......................................................................... -1V to 12V
Clamp Diode Forward Current .............................................................................. 100mA
Operating Junction Temperature
Plastic (DM - Package) ......................................................................................... 150°C
Storage Temperature Range...................................................................... -65°C to 150°C
Lead Temperature (Soldering, 10 seconds) ............................................................ 300°C
PACKAGE PIN OUTS
RESET
INPUT
N.C.
GROUND
N.C.
N.C.
N.C.
N.C.
DM PACKAGE
(Top View)
Note 1. Values beyond which damage may occur. All voltages are specified with respect to
ground, and all currents are positive into the specified terminal.
DM PACKAGE:
THERMAL RESISTANCE-JUNCTION TO AMBIENT,
θθ
θθ
θ
JA
165°C/W
LP PACKAGE:
THERMAL RESISTANCE-JUNCTION TO AMBIENT,
θθ
θθ
θ
JA
156°C/W
Junction Temperature Calculation: TJ = TA + (P
D
x θ
JA
).
The θ
JA
numbers are guidelines for the thermal performance of the device/pc-board system.
All of the above assume no ambient airflow.
THERMAL DATA
BLOCK DIAGRAM
LP PACKAGE
(Top View)
3. GROUND
2. INPUT
1. RESET
1.2 V
REF
INPUT
RESET
GROUND
2(2)
1(1)
4(3)
1 8
2 7
3 6
4 5
Page 3
5V UNDERVOLTAGE SENSING CIRCUIT
MC33164/MC34164
PRODUCT DATABOOK 1996/1997
3
Copyright © 1997
Rev. 1.5 11/97
P RODUCTION DATA SHEET
Input Supply Voltage
RESET Output Voltage
Clamp Diode Forward Current
Operating Ambient Temperature Range:
MC34164 T
A
MC33164 T
A
RECOMMENDED OPERATING CONDITIONS (Note 2)
Parameter
Symbol
Units
Recommended Operating Conditions
Min. Typ. Max.
110V
10 V
50 mA
070°C
-40 85 °C
Note 2. Range over which the device is guaranteed functional.
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, these specifications apply over the operating ambient temperatures of 0°C ≤ TA ≤ 70°C for the MC34164 and -40°C ≤ TA ≤ 85°C
for the MC33164. Low duty cycle pulse testing techniques are used which maintains junction and case temperatures equal to the ambient temperature.)
Parameter
Symbol
Test Conditions Units
Comparator Section
4.15 4.33 4.45 V
4.15 4.27 4.45 V
0.02 0.06 V
Threshold Voltage
High-State Output VIHVIN Increasing
Low-State Output V
IL
VIN Decreasing
Hysteresis V
H
0.05 0.40 V
0.06 0.30 V
7.0 50 mA
0.5 µA
2.0 µA
0.6 1.2 V
Output Sink Saturation V
OLVIN
= 4.0V, I
SINK
= 1.0mA
VIN = 1.0V, I
SINK
= 0.25mA
Output Sink Current I
SINKVIN
, RESET = 4.0V
Output Off-State Leakage VIN , RESET = 5.0V
V
IN
, RESET = 10V
Clamp Diode Forward Voltage VFPin 1 to pin 2, (IF = 5.0mA)
RESET Output Section
MC33164 / MC34164
Min. Typ. Max.
Total Device
1.0 10 V
10 20 µA
19 50 µA
Operating Input Voltage Range V
IN
Quiescent Input Current I
IN
VIN = 5.0V
VIN = 10V
Page 4
5V U
NDERVOLTAGE SENSING CIRCUIT
MC33164/MC34164
PRODUCT DATABOOK 1996/1997
Copyright © 1997
Rev. 1.5 11/97
4
P
RODUCTION DATA SHEET
GRAPH / CURVE INDEX
Characteristic Curves
FIGURE #
1. COMPARATOR THRESHOLD VOLTAGE vs. TEMPERATURE
2. RESET OUTPUT VOLTAGE vs. INPUT VOLTAGE
3. RESET OUTPUT SATURATION vs. SINK CURRENT
4. INPUT CURRENT vs. INPUT VOLTAGE
5. RESET DELAY TIME (LOW to HIGH)
6. RESET DELAY TIME (HIGH to LOW)
FIGURE INDEX
Application Circuits
FIGURE #
7. SWITCHING THE LOAD OFF WHEN BATTERY REACHES BELOW 4.3V
8. LOW VOLTAGE MICROPROCESSOR RESET
9. VOLTAGE MONITOR
10. MOSFET LOW VOLTAGE GATE DRIVE PROTECTION
Page 5
5V UNDERVOLTAGE SENSING CIRCUIT
MC33164/MC34164
PRODUCT DATABOOK 1996/1997
5
Copyright © 1997
Rev. 1.5 11/97
P RODUCTION DATA SHEET
CHARACTERISTIC CURVES
FIGURE 2. — RESET OUTPUT VOLTAGE
vs. INPUT VOLTAGE
FIGURE 3. — RESET OUTPUT SATURATION
vs. SINK CURRENT
FIGURE 4. — INPUT CURRENT vs. INPUT VOLTAGE
FIGURE 1. — COMPARATOR THRESHOLD VOLTAGE
vs. TEMPERATURE
Junction Temperature - (°C)
Threshold Voltage - (V)
4.15
-50
-25 0 25 50 75 100 125
4.20
4.25
4.30
4.35
4.40
4.45
Upper Threshold
High State Output
Lower Threshold
Low State Output
RL = 43K to V
IN
0
0
(I
SINK
) Sink Current - (mA)
(V
OL
) Output Saturation - (mV)
100
3
VIN = 4V
TA = 25°C
6 9 12 14
200
300
400
500
0
0
Input Voltage - (V)
Input Current - (µA)
20
2
140
40
60
80
100
120
46 81012
R
L
= ¥
TA = 25°C
0
0
Input Voltage - (V)
Output Voltage - (V)
2.0
2.0
RL = 82K to V
IN
TA = 25°C
4.0 6.0 8.0 10
4.0
6.0
8.0
10
Page 6
5V U
NDERVOLTAGE SENSING CIRCUIT
MC33164/MC34164
PRODUCT DATABOOK 1996/1997
Copyright © 1997
Rev. 1.5 11/97
6
P
RODUCTION DATA SHEET
CHARACTERISTIC CURVES
FIGURE 6. — RESET DELAY TIME (HIGH TO LOW)
FIGURE 5. — RESET DELAY TIME (LOW TO HIGH)
0%
2µs/DIV.
REF
43K
RESET
5V
4V
V
IN
5V
4V
VIN = 4.0V to 5.0V
RL = 43K
TA = 25°C
100%
0%
0.5µs/DIV.
REF
43K
RESET
5V
4V
V
IN
5V
4V
VIN = 4.0V to 5.0V
RL = 43K
TA = 25°C
100%
Page 7
5V UNDERVOLTAGE SENSING CIRCUIT
MC33164/MC34164
PRODUCT DATABOOK 1996/1997
7
Copyright © 1997
Rev. 1.5 11/97
P RODUCTION DATA SHEET
TYPICAL APPLICATION CIRCUITS
FIGURE 8. — LOW-VOLTAGE MICROPROCESSOR RESET
POWER
SUPPLY
1.2 V
REF
RESET
2
1.0k
1
3
FIGURE 9. — VOLTAGE MONITOR
FIGURE 7. — SWITCHING THE LOAD OFF WHEN
BATTERY VOLTAGE REACHES BELOW 4.3V
A time delayed reset can be accomplished with the addition of C
DLY
.
For systems with extremely fast power supply rise times (< 500ns) it
is recommended that the RC
DLY
time constant be greater than 5.0µs.
V
TH(MPU)
is the microprocessor reset input threshold.
POWER
SUPPLY
1.2 V
REF
MICROPROCESSOR
CIRCUIT
RESET
C
DLY
R
2
1
3
1.2 V
REF
LOAD
RESET
2
4
1
1.2 V
REF
2
270
4.3V
V
CC
R
L
SMP60N03-10L
1
3
FIGURE 10. — MOSFET LOW-VOLTAGE GATE DRIVE PROTECTION
Overheating of the logic level power MOSFET due to insufficient
gate voltage can be prevented with the above circuit. When the
input signal is below the 4.3 volt threshold of the MC34164, its
output grounds the gate of the L
2
MOSFET.
t
DLY
= R C
DLY
In
V
TH(MPU)
V
IN
1 -
1
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