Datasheet MC34152D, MC34152DR2, MC34152P, MC33152DR2, MC33152P Datasheet (Motorola)

Order this document by MC34152/D

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The MC34152/MC33152 are dual noninverting high speed drivers
specifically designed for applications that require low current digital signals to
drive large capacitive loads with high slew rates. These devices feature low
input current making them CMOS/LSTTL logic compatible, input hysteresis
for fast output switching that is independent of input transition time, and two
high current totem pole outputs ideally suited for driving power MOSFETs.
Also included is an undervoltage lockout with hysteresis to prevent system
erratic operation at low supply voltages.

Typical applications include switching power supplies, dc–to–dc
converters, capacitor charge pump voltage doublers/inverters, and motor
controllers.

This device is available in dual–in–line and surface mount packages.

• Two Independent Channels with 1.5 A Totem Pole Outputs

• Output Rise and Fall Times of 15 ns with 1000 pF Load

• CMOS/LSTTL Compatible Inputs with Hysteresis

• Undervoltage Lockout with Hysteresis

• Low Standby Current

• Efficient High Frequency Operation

• Enhanced System Performance with Common Switching Regulator

Control ICs



HIGH SPEED

DUAL MOSFET DRIVERS

SEMICONDUCTOR

TECHNICAL DATA

P SUFFIX

PLASTIC PACKAGE

CASE 626

D SUFFIX

PLASTIC PACKAGE

CASE 751

(SO–8)

8

1

8

1

Logic

Input A

Logic

Input B

Representative Diagram

VCC6

+
–

5.7V

Drive Output A

2

4

Gnd 3

100k

100k

7

Drive Output B
5

Device

MC34152D
MC34152P Plastic DIP
MC33152D SO–8
MC33152P Plastic DIP

PIN CONNECTIONS

1 8 N.C.N.C.
2 7 Drive Output ALogic Input A
36V

Gnd

4 5 Drive Output BLogic Input B

(Top View)

ORDERING INFORMATION

Operating

Temperature Range

TA = 0° to +70°C

TA = –40° to +85°C

CC

Package

SO–8

MOTOROLA ANALOG IC DEVICE DATA

 Motorola, Inc. 1996 Rev 0

1

MC34152 MC33152

MAXIMUM RATINGS

Rating Symbol Value Unit

Power Supply Voltage V
Logic Inputs (Note 1) V

CC

in

Drive Outputs (Note 2)

Totem Pole Sink or Source Current
Diode Clamp Current (Drive Output to VCC)

I

O

I

O(clamp)

Power Dissipation and Thermal Characteristics

D Suffix, Plastic Package Case 751

Maximum Power Dissipation @ TA = 50°C
Thermal Resistance, Junction–to–Air

P Suffix, Plastic Package, Case 626

Maximum Power Dissipation @ TA = 50°C

Thermal Resistance, Junction–to–Air
Operating Junction Temperature T
Operating Ambient Temperature MC34152

Operating Ambient Temperature MC33152

Storage Temperature Range T

ELECTRICAL CHARACTERISTICS (V

= 12 V, for typical values TA = 25°C, for min/max values TA is the operating ambient

CC

R

R

P

θJA

P

θJA

T

stg

D

D

J

A

temperature range that applies [Note 3], unless otherwise noted.)

Characteristics

LOGIC INPUTS

Input Threshold Voltage

High State Logic 1
Low State Logic 0

Input Current

High State (VIH = 2.6 V)
Low State (VIL = 0.8 V)

DRIVE OUTPUT

Output Voltage

Low State (I

Low State (I
Low State (I

High State (I

High State (I
High State (I

= 10 mA)

sink

= 50 mA)

sink

= 400 mA)

sink

source
source
source

= 10 mA)
= 50 mA)
= 400 mA)

Output Pull–Down Resistor R

SWITCHING CHARACTERISTICS (TA = 25°C)

Propagation Delay (CL = 1.0 nF)

Logic Input to:

Drive Output Rise (10% Input to 10% Output)

Drive Output Fall (90% Input to 90% Output)
Drive Output Rise Time (10% to 90%) CL = 1.0 nF

Drive Output Rise Time (10% to 90%) CL = 2.5 nF

Drive Output Fall Time (90% to 10%) CL = 1.0 nF

Drive Output Fall Time (90% to 10%) CL = 2.5 nF

TOTAL DEVICE

Power Supply Current

Standby (Logic Inputs Grounded)
Operating (CL = 1.0 nF Drive Outputs 1 and 2, f = 100 kHz)

Operating Voltage V

NOTES: 1. For optimum switching speed, the maximum input voltage should be limited to 10 V or VCC, whichever is less.

2. Maximum package power dissipation limits must be observed.

3. Low duty cycle pulse techniques are used during test to maintain junction temperature as close to ambient as possible.
T

= 0°C for MC34152 T

low

T

= –40°C for MC33152 T

low

= +70°C for MC34152

high

= +85°C for MC33152

high

20 V

–0.3 to +V

CC

1.5

1.0

0.56
180

°C/W

1.0

100

°C/W

+150 °C

0 to +70

–40 to +85

–65 to +150 °C

Symbol Min Typ Max Unit

V

IH

V

IL

I

IH

I

IL

V

OL

V

OH

PD

t

PLH (IN/OUT)

t

PHL (IN/OUT)

t

r

t

f

I

CC

CC

V
A

W

W

°C

2.6
–

–
–

–
–
–

10.5

10.4
10

– 100 – kΩ

–
–

–
–

–
–

–
–

6.5 – 18 V

1.75

1.58

100

20

0.8

1.1

1.8

11.2

11.1

10.8

55
40

14
36

15
32

6.0

10.5

–

0.9

300
100

1.2

1.5

2.5
–
–
–

120
120

30

–

30

–

8.0

15

V

µA

V

ns

ns

ns

mA

2

MOTOROLA ANALOG IC DEVICE DATA

MC34152 MC33152

Figure 1. Switching Characteristics T est CIrcuit Figure 2. Switching Waveform Definitions

12V

0.14.7

Logic Input

50

+

6

+
–

+

5.7V

2

Drive Output

7

100k100k

C

L

Logic Input
tr, tf

≤

10 ns

Drive Output

5 V

0 V

10%

t

PLH

t

r

10%

90%

t

PHL

90%

t

f

4

3

Figure 3. Logic Input Current versus Input V oltage

2.4
VCC=12V

°

C

TA=25

2.0

1.6

1.2

0.8

, INPUT CURRENT (mA)

in

I

0.4

0

0 2.0 4.0 6.0 8.0 10 12

Vin, INPUT VOLTAGE (V) TA, AMBIENT TEMPERATURE (°C)

5

Figure 4. Logic Input Threshold V oltage

versus T emperature

2.2

2.0

1.8

1.6

1.4

1.2

, INPUT THRESHOLD VOLT AGE (V)

th

V

1.0
–55 –25 0 25 50 75 100 125

Lower Threshold
High State Output

Upper Threshold
Low State Output

VCC=12V

Figure 5. Drive Output High to Low Propagation

Delay versus Logic Input Overdrive V oltage

200

V

=12V

CC

CL= 1.0 nF

160

120

80

40

, DRIVE OUTPUT PROP AGATION DELAY (ns)

0

–1.6 –1.2 –0.8 –0.4 0

Vin, INPUT OVERDRIVE VOLTAGE BELOW LOWER THRESHOLD (V)

PLH(In/Out)

t

TA=25

°

Overdrive Voltage is with Respect

to the Logic Input Lower Threshold

C

V

th(lower)

MOTOROLA ANALOG IC DEVICE DATA

Figure 6. Drive Output Low to High Propagation

Delay versus Logic Input Overdrive V oltage

200

160

120

80

40

, DRIVE OUTPUT PROP AGATION DELAY (ns)

PHL(In/Out)

t

V

th(upper)

0

0

Vin, INPUT OVERDRIVE VOLTAGE ABOVE UPPER THRESHOLD (V)

Overdrive Voltage is with Respect
to the Logic Input Upper Threshold

1234

VCC=12V
CL= 1.0 nF

°

TA=25

C

3

MC34152 MC33152

Figure 7. Propagation Delay

VCC = 12 V

90% –

10% –

Vin = 0 V to 5.0 V
CL = 1.0 nF

°

C

TA = 25

Drive Output

Logic Input

50 ns/DIV

Figure 9. Drive Output Saturation Voltage

versus Load Current

0

–1.0
–2.0
–3.0

3.0

2.0

1.0

sat

V , OUTPUT SA TURATION VOLTAGE (V)

0

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

IO, OUTPUT CLAMP CURRENT (A)

Source Saturation

V

CC

(Load to Ground)

Sink Saturation

(Load to VCC)

VCC = 12 V

µ

s Pulsed Load

80
120 Hz Rate

TA = 25

Gnd

Figure 8. Drive Output Clamp Voltage

versus Clamp Current

3.0

High State Clamp (Drive

Output Driven Above VCC)

2.0

1.0
V

0

, OUTPUT CLAMP VOL TAGE (V), OUTPUT SA TURATION VOLTAGE (V)

0

clamp

V

–1.0

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

CC

Gnd

IO, OUTPUT CLAMP CURRENT (A)

Output Driven Below Ground)

VCC = 12 V

µ

s Pulsed Load

80
120 Hz Rate

°

C

TA = 25

Low State Clamp (Drive

Figure 10. Drive Output Saturation Voltage

versus T emperature

0

Source Saturation

–0.5

(Load to Ground)

–0.7

VCC = 12 V

°

C

–0.9

–1.1

1.9

1.7

1.5

1.0

0.8
Sink Saturation

0.6

sat

V

(Load to VCC)

0

–55 –25 0 25 50 75 100 125

V

CC

Gnd

TA, AMBIENT TEMPERATURE (

I

source

I

source

°

C)

= 400 mA

I

= 400 mA

sink

I

sink

= 10 mA

= 10 mA

90% –

10% –

4

Figure 11. Drive Output Rise T ime Figure 12. Drive Output Fall Time

VCC = 12 V

90% –

VCC = 12 V
Vin = 0 V to 5.0 V
CL = 1.0 nF

°

C

TA = 25

10 ns/DIV 10 ns/DIV

10% –

Vin = 0 V to 5.0 V
CL = 1.0 nF

°

C

TA = 25

MOTOROLA ANALOG IC DEVICE DATA

MC34152 MC33152

Figure 13. Drive Output Rise and Fall Time

versus Load Capacitance

80

VCC = 12 V
VIN = 0 V to 5.0 V

°

C

TA = 25

60

40

t

, OUTPUT RISE-FALL TIME(ns)

20

f

–t

r

t

0

0.1 1.0 10
CL, OUTPUT LOAD CAPACITANCE (nF)

f

t

r

, SUPPLY CURRENT (mA)I
I

CC

Figure 14. Supply Current versus Drive

Output Load Capacitance

80

VCC = 12 V
Both Logic Inputs Driven
0 V to 5.0 V

60

50% Duty Cycle
Both Drive Outputs Loaded

°

C

TA = 25

40

f = 500 kHz

20

0

0.1 1.0 10
CL, OUTPUT LOAD CAPACITANCE (nF)

f = 200 kHz

f = 50 kHz

Figure 15. Supply Current versus Input Frequency Figure 16. Supply Current versus Supply V oltage

80

Both Logic Inputs Driven
0 V to 5.0 V,
50% Duty Cycle

60

Both Drive Outputs Loaded

°

C

TA = 25
1 – VCC = 18 V, CL = 2.5 nF

2 – VCC = 12 V, CL = 2.5 nF

40

3 – VCC = 18 V, CL = 1.0 nF
4 – VCC = 12 V, CL = 1.0 nF

, SUPPLY CURRENT (mA)

20

CC

I

1

2

3

4

8.0

6.0

4.0

, SUPPLY CURRENT (mA)

2.0

CC

TA = 25°C

Logic Inputs at V

Low State Drive Outputs

CC

Logic Inputs Grounded

High State Drive Outputs

0

10 k 100 1.0 M

f, INPUT FREQUENCY (Hz)

APPLICATIONS INFORMATION

Description

The MC34152 is a dual noninverting high speed driver
specifically designed to interface low current digital circuitry
with power MOSFETs. This device is constructed with
Schottky clamped Bipolar Analog technology which offers a
high degree of performance and ruggedness in hostile
industrial environments.

Input Stage

The Logic Inputs have 170 mV of hysteresis with the input
threshold centered at 1.67 V. The input thresholds are
insensitive to VCC making this device directly compatible with
CMOS and LSTTL logic families over its entire operating
voltage range. Input hysteresis provides fast output switching
that is independent of the input signal transition time,
preventing output oscillations as the input thresholds are
crossed. The inputs are designed to accept a signal
amplitude ranging from ground to VCC. This allows the output
of one channel to directly drive the input of a second channel
for master–slave operation. Each input has a 30 kΩ
pull–down resistor so that an unconnected open input will
cause the associated Drive Output to be in a known low state.

Output Stage

Each totem pole Drive Output is capable of sourcing and
sinking up to 1.5 A with a typical ‘on’ resistance of 2.4 Ω at

1.0 A. The low ‘on’ resistance allows high output currents to

0

0 4.0 8.0 12 16

VCC, SUPPLY VOLTAGE (V)

be attained at a lower VCC than with comparative CMOS
drivers. Each output has a 100 kΩ pull–down resistor to keep
the MOSFET gate low when VCC is less than 1.4 V. No over
current or thermal protection has been designed into the
device, so output shorting to VCC or ground must be avoided.

Parasitic inductance in series with the load will cause the
driver outputs to ring above VCC during the turn–on transition,
and below ground during the turn–off transition. With CMOS
drivers, this mode of operation can cause a destructive
output latch–up condition. The MC34152 is immune to output
latch–up. The Drive Outputs contain an internal diode to V

CC

for clamping positive voltage transients. When operating with
VCC at 18 V, proper power supply bypassing must be
observed to prevent the output ringing from exceeding the
maximum 20 V device rating. Negative output transients are
clamped by the internal NPN pull–up transistor. Since full
supply voltage is applied across the NPN pull–up during the
negative output transient, power dissipation at high
frequencies can become excessive. Figures 19, 20, and 21
show a method of using external Schottky diode clamps to
reduce driver power dissipation.

Undervoltage Lockout

An undervoltage lockout with hysteresis prevents erratic
system operation at low supply voltages. The UVLO forces
the Drive Outputs into a low state as VCC rises from 1.4 V to

MOTOROLA ANALOG IC DEVICE DATA

5

MC34152 MC33152

the 5.8 V upper threshold. The lower UVLO threshold is 5.3 V ,
yielding about 500 mV of hysteresis.

Power Dissipation

Circuit performance and long term reliability are enhanced
with reduced die temperature. Die temperature increase is
directly related to the power that the integrated circuit must
dissipate and the total thermal resistance from the junction to
ambient. The formula for calculating the junction temperature
with the package in free air is:

TA + PD (R

TJ=

where:

R

Junction Temperature

TJ=

Ambient Temperature

TA=

Power Dissipation

PD=

Thermal Resistance Junction to Ambient

=

θJA

There are three basic components that make up total
power to be dissipated when driving a capacitive load with
respect to ground. They are:

PQ + PC + PT

PD=

where:

PQ=

Quiescent Power Dissipation

PC=

Capacitive Load Power Dissipation

PT=

Transition Power Dissipation

The quiescent power supply current depends on the
supply voltage and duty cycle as shown in Figure 16. The
device’s quiescent power dissipation is:

PQ=

VCC (I

where:

I

CCL

=

Supply Current with Low State Drive
Outputs

I

=

CCH

Supply Current with High State Drive
Outputs

D=

Output Duty Cycle

The capacitive load power dissipation is directly related to
the load capacitance value, frequency, and Drive Output
voltage swing. The capacitive load power dissipation per
driver is:

VCC (VOH – VOL) CL f

PC=

where:

VOH=

VOL=

CL=

f=

High State Drive Output Voltage
Low State Drive Output Voltage
Load Capacitance
Frequency

When driving a MOSFET , the calculation of capacitive load
power PC is somewhat complicated by the changing gate to
source capacitance CGS as the device switches. T o aid in this
calculation, power MOSFET manufacturers provide gate
charge information on their data sheets. Figure 17 shows a
curve of gate voltage versus gate charge for the Motorola
MTM15N50. Note that there are three distinct slopes to the
curve representing different input capacitance values. To

CCL

)

θJA

[1–D] + I

CCH

[D])

completely switch the MOSFET ‘on,’ the gate must be
brought to 10 V with respect to the source. The graph shows
that a gate charge Qg of 110 nC is required when operating
the MOSFET with a drain to source voltage VDS of 400 V.

Figure 17. Gate–to–Source V oltage

versus Gate charge

16

MTM15B50
ID = 15 A

°

C

TA = 25

12

8.0

4.0

2.0 nF

, GATE–T O–SOURCE VOL TAGE (V)

GS

V

0

0 40 80 120 160

VDS= 100 V VDS= 400 V

8.9 nF

CGS =

Qg, GATE CHARGE (nC)

∆

Q

g

∆

V

GS

The capacitive load power dissipation is directly related to the
required gate charge, and operating frequency. The
capacitive load power dissipation per driver is:

P

C(MOSFET)

= VCC Qg f

The flat region from 10 nC to 55 nC is caused by the
drain–to–gate Miller capacitance, occurring while the
MOSFET is in the linear region dissipating substantial
amounts of power. The high output current capability of the
MC34152 is able to quickly deliver the required gate charge
for fast power efficient MOSFET switching. By operating the
MC34152 at a higher VCC, additional charge can be provided
to bring the gate above 10 V. This will reduce the ‘on’
resistance of the MOSFET at the expense of higher driver
dissipation at a given operating frequency.

The transition power dissipation is due to extremely short
simultaneous conduction of internal circuit nodes when the
Drive Outputs change state. The transition power dissipation
per driver is approximately:

PT ≈ VCC (1.08 VCC CL f – 8 x 10–4)
PT must be greater than zero.

Switching time characterization of the MC34152 is
performed with fixed capacitive loads. Figure 13 shows that
for small capacitance loads, the switching speed is limited by
transistor turn–on/off time and the slew rate of the internal
nodes. For large capacitance loads, the switching speed is
limited by the maximum output current capability of the
integrated circuit.

6

MOTOROLA ANALOG IC DEVICE DATA

MC34152 MC33152

LAYOUT CONSIDERATIONS

High frequency printed circuit layout techniques are
imperative to prevent excessive output ringing and
overshoot. Do not attempt to construct the driver circuit
on wire–wrap or plug–in prototype boards. When driving
large capacitive loads, the printed circuit board must contain
a low inductance ground plane to minimize the voltage spikes
induced by the high ground ripple currents. All high current
loops should be kept as short as possible using heavy copper
runs to provide a low impedance high frequency path. For

Figure 18. Enhanced System Performance with

Common Switching Regulators

V

CC

47 0.1

6

+
–

5.7V

2

TL494

or

TL594

7

optimum drive performance, it is recommended that the initial
circuit design contains dual power supply bypass capacitors
connected with short leads as close to the VCC pin and
ground as the layout will permit. Suggested capacitors are a
low inductance 0.1 µF ceramic in parallel with a 4.7 µF
tantalum. Additional bypass capacitors may be required
depending upon Drive Output loading and circuit layout.

Proper printed circuit board layout is extremely critical

and cannot be over emphasized.

Figure 19. MOSFET Parasitic Oscillations

V

V

in

R

g

D

100k

1

1N5819

in

4

3

The MC34152 greatly enhances the drive capabilities of common switching
regulators and CMOS/TTL logic devices.

5

100k 100k

Series gate resistor Rg may be needed to damp high frequency parasitic oscillations
caused by the MOSFET input capacitance and any series wiring inductance in the
gate–source circuit. Rg will decrease the MOSFET switching speed. Schottky diode
D1 can reduce the driver’s power dissipation due to excessive ringing, by preventing
the output pin from being driven below ground.

Figure 20. Direct Transformer Drive Figure 21. Isolated MOSFET Drive

7

4 X

1N5819

5

100k 100k

3

Isolation

Boundary

100k

3

1N

5819

Output Schottky diodes are recommended when driving inductive loads at high
frequencies. The diodes reduce the driver’s power dissipation by preventing the
output pins from being driven above VCC and below ground.

MOTOROLA ANALOG IC DEVICE DATA

7

MC34152 MC33152

Figure 22. Controlled MOSFET Drive Figure 23. Bipolar Transistor Drive

I

B

+
0

–

100k

Base

Charge

Removal

V

C

1

100k

R

g(off)

R

g(on)

V

in

in

In noise sensitive applications, both conducted and radiated EMI can
be reduced significantly by controlling the MOSFET’s turn–on and
turn–off times.

Figure 24. Dual Charge Pump Converter

VCC = 15V

47 0.1

+

6

+
–

+

5.7V

2

V

CC

10k

2N3904

330

100k

4

pF

The totem–pole outputs can furnish negative base current for
enhanced transistor turn–off, with the addition of capacitor C1.

7

5

100k 100k

6.8 10

6.8 10
+

+

1N5819

47

1N5819

47

≈

2 .0V

+ VO

+

– VO

+

CC

≈

–V

CC

3

Output Load Regulation

The capacitor’s equivalent series resistance limits the Drive Output Current to 1.5 A. An
additional series resistor may be required when using tantalum or other low ESR capacitors.

8

IO (mA) +VO (V) –VO (V)

0 27.7 –13.3

1.0 27.4 –12.9
10 26.4 –11.9
20 25.5 –11.2
30 24.6 –10.5
50 22.6 –9.4

MOTOROLA ANALOG IC DEVICE DATA

NOTE 2

–T–

14

F

–A–

–T–

SEATING
PLANE

H

G

–A–

58

14

G

8X D

58

–B–

C

N

D

0.13 (0.005) B

4X P

–B–

M

0.25 (0.010)MB

C

SEATING
PLANE

K

SS

A0.25 (0.010)MTB

MC34152 MC33152

OUTLINE DIMENSIONS

P SUFFIX

PLASTIC PACKAGE

CASE 626–05

ISSUE K

L

J

K

A

T

M

M

M

M

D SUFFIX

PLASTIC PACKAGE

CASE 751–05

(SO–8)

ISSUE N

M

R

X 45

_

_

NOTES:

1. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.

2. PACKAGE CONTOUR OPTIONAL (ROUND OR
SQUARE CORNERS).

3. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

DIM MIN MAX MIN MAX

A 9.40 10.16 0.370 0.400
B 6.10 6.60 0.240 0.260
C 3.94 4.45 0.155 0.175
D 0.38 0.51 0.015 0.020
F 1.02 1.78 0.040 0.070
G 2.54 BSC 0.100 BSC
H 0.76 1.27 0.030 0.050
J 0.20 0.30 0.008 0.012
K 2.92 3.43 0.115 0.135
L 7.62 BSC 0.300 BSC
M ––– 10 ––– 10
N 0.76 1.01 0.030 0.040

NOTES:

1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.

4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.

5. DIMENSION D DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.127
(0.005) TOTAL IN EXCESS OF THE D
DIMENSION AT MAXIMUM MATERIAL
CONDITION.

DIM MIN MAX MIN MAX

A 4.80 5.00 0.189 0.196
B 3.80 4.00 0.150 0.157

F

J

C 1.35 1.75 0.054 0.068
D 0.35 0.49 0.014 0.019
F 0.40 1.25 0.016 0.049

G 1.27 BSC 0.050 BSC

J 0.18 0.25 0.007 0.009
K 0.10 0.25 0.004 0.009

M 0 7 0 7

P 5.80 6.20 0.229 0.244
R 0.25 0.50 0.010 0.019

INCHESMILLIMETERS

__

INCHESMILLIMETERS

____

MOTOROLA ANALOG IC DEVICE DATA

9

MC34152 MC33152

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola
was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.

How to reach us:
USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center,

P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 or 602–303–5454 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–81–3521–8315

MFAX: RMF [e-mail] – TOUCHT ONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T ., Hong Kong. 852–26629298

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MOTOROLA ANALOG IC DEVICE DATA

MC34152/D

*MC34152/D*