Datasheet MC33290D, MC33290P Datasheet (Motorola)

Page 1
8
1
P SUFFIX
PLASTIC PACKAGE
CASE 626
Device
Operating
Temperature Range
Package
SEMICONDUCTOR
TECHNICAL DATA
ISO SERIAL LINK
INTERFACE
ORDERING INFORMATION
MC33290D MC33290P
TA = –40° to +125°C
SO–8
DIP–8
PIN CONNECTIONS
Order this document by MC33290/D
18
7 6 5
2 3 4
V
BB
N/C
Gnd
Tx
(Top View)
ISO
(K Line I/O)
Rx V
DD
CEN
D SUFFIX
PLASTIC PACKAGE
CASE 751
(SO–8)
8
1
1
MOTOROLA ANALOG IC DEVICE DATA
 
   
The MC33290 is a serial link bus interface device designed to provide bi–directional half–duplex communication interfacing in automotive diagnostic applications. It is designed to interface between the vehicle’s on–board microcontroller and systems off–board the vehicle via the special ISO K line. The MC33290 is designed to meet the “Diagnostic Systems ISO9141” specification. The device’s K line bus driver’s output is fully protected against bus shorts and over temperature conditions.
The MC33290 derives it’s robustness to temperature and voltage extremes from being built on a SMARTMOS
process, incorporating CMOS
logic, bipolar/MOS analog circuitry, and DMOS power FETs. Though the MC33290 was principally designed for automotive applications, it is suited for other serial communication applications. It is parametrically specified over an ambient temperature range of –40°C TA 125°C and 8.0 V V
Bat
18 V supply. The economical 8 pin DIP and SO–8 surface mount plastic packages make the MC33290 very cost effective.
Designed to Operate Over Wide Supply Voltage of 8.0 to 18 V
Ambient Operating Temperature of –40°C to 125°C
Interfaces Directly to Standard CMOS Microprocessors
ISO K Line Pin Protected Against Shorts to Ground
Thermal Shutdown with Hysteresis
Maximum Transmission Speeds in Excess of 50 k Baud
ISO K Line Pin Capable of High Currents
ISO K Line can be Driven with up to 10 nF of Parasitic Capacitance
8.0 kV ESD Protection Attainable with Few Additional Components
Standby Mode: No V
Bat
Current Drain with VDD at 5.0 V
Low Current Drain during Operation with V
DD
at 5.0 V
Typical Application Schematic
This device contains 85 active transistors.
Components Necessary for: Reverse Battery (1), Overvoltage Transient (2), and
8.0 kV ESD Protection (3) in a metal module case.
V
CC
D
x
SCIRxD SCITxD
MCU
V
DD
CEN Rx
Tx
V
BB
ISO
Gnd
5.0 nF(3)
27 V(3)
1.0 nF
5.0 V
10 nF(3)
500
(2)
D(1)
45 V(2)
+V
Bat
+V
DD
ISO
K Line
510
Service Scan Tool
or
End of Production Line
Programming
or
System Checking
On–Board Diagnostic Link
MC33290
TxD
RxD
6 5
7
8
3
4
1
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Motorola, Inc. 1997 Rev 0
Page 2
MC33290
2
MOTOROLA ANALOG IC DEVICE DATA
Figure 1. Simplified Block Diagram
V
BB
CEN V
DD
Tx
Rx ISO
Gnd
40 V
Thermal
Shutdown
R
Hys
Master
Bias
6 4
3
1
8 7
5
MAXIMUM RATINGS (All voltages are with respect to ground, unless otherwise noted.)
Rating Symbol Value Unit
VDD DC Supply Voltage
V
DD
–0.3 to 7.0
V
VBB Load Dump Peak Voltage
V
BB(LD)
45
V
ISO Pin Load Dump Peak Voltage
V
ISO
40
V
ISO Short Circuit Current Limit
I
ISO(LIM)
1.0
A
ESD Voltage (Note 1)
V
Human Body Model (Note 2) V
ESD1
2000
Machine Model (Note 3) V
ESD2
200
ISO Clamp Energy (Note 4)
E
clamp
10
mJ
Storage Temperature
T
stg
–55 to +150
°C
Operating Case Temperature
T
C
–40 to +125
°C
Operating Junction Temperature
T
J
–40 to +150
°C
Power Dissipation (TA = 25°C)
P
D
0.8
W
Soldering Temperature (for 10 seconds)
T
solder
260
°C
Thermal Resistance (Junction–to–Ambient)
R
θJA
150
°C/W
NOTES: 1. ESD data available upon request.
2.Testing in accordance with Human Body Model (C
Zap
= 100 pF, R
Zap
= 1500 ).
3.Testing in accordance with Machine Model (C
Zap
= 100 pF, R
Zap
= 0).
4.Non–repetitive clamping capability at 25°C.
ELECTRICAL CHARACTERISTICS (Characteristics noted under conditions of 4.75 V V
DD
5.25 V, 8.0 V VBB,
HSIP 18.0 V, –40°C TC 125°C, unless otherwise noted.)
Characteristic
Symbol Min Typ Max Unit
POWER AND CONTROL
ББББББББББББББББББ
Á
VDD Sleep State Current (HSIM = HSIP, LSIM = LSIP = 0 V,
VRSM = VRSP = 0 V, Tx = 0.8 VDD, CEN = 0.3 VDD)
ÁÁÁÁ
ÁÁÁ
Á
I
DD(SS)
ÁÁ
Á
Á
Á
ÁÁÁ
Á
0.1
Á
Á
mA
ББББББББББББББББББ
VDD Quiescent Operating Current (HSIM = HSIP – 0.3 V, LSIM = 0 V,
LSIP = 0.3 V, VRSM = 0 V, VRSP = –0.5 V, Tx = 0.2 VDD, CEN = 0.7 VDD)
ÁÁÁÁ
ÁÁÁ
I
DD(Q)
ÁÁÁÁÁÁ
1.0
Á
mA
ББББББББББББББББББ
Á
VBB Sleep State Current (VBB = 16 V, HSIM = HSIP, LSIM = LSIP = 0 V,
VRSM = VRSP = 0 V, Tx = 0.8 VDD, CEN = 0.3 VDD)
ÁÁÁÁ
ÁÁÁ
Á
I
BB(SS)
ÁÁ
Á
Á
Á
ÁÁÁ
Á
50
Á
Á
µA
ББББББББББББББББББ
Á
VBB Quiescent Operating Current (HSIM = HSIP – 0.3 V, LSIM = 0 V,
LSIP = 0.3 V, VRSM = 0 V, VRSP = –0.5 V, Tx = 0.2 VDD, CEN = 0.7 VDD)
ÁÁÁÁ
ÁÁÁ
Á
I
BB(Q)
ÁÁ
Á
Á
Á
ÁÁÁ
Á
1.0
Á
Á
mA
Chip Enable
ÁÁÁÁ
V
Input High Voltage Threshold (Note 1) V
IH(CEN)
0.7 V
DD
Input Low Voltage Threshold (Note 2) V
IL(CEN)
0.3 V
DD
NOTES: 1. When IBB transitions to >100 µA.
2.When IBB transitions to <100 µA.
Page 3
MC33290
3
MOTOROLA ANALOG IC DEVICE DATA
ELECTRICAL CHARACTERISTICS (continued) (Characteristics noted under conditions of 4.75 V V
DD
5.25 V, 8.0 V VBB,
HSIP 18.0 V, –40°C TC 125°C, unless otherwise noted.)
Characteristic UnitMaxTypMinSymbol
POWER AND CONTROL
Chip Enable Pull–Down Current (Note 3)
ÁÁÁÁ
I
PD(CEN)
2.0
40
µA
Tx Input Low Voltage Threshold (R
ISO
= 510 ) (Note 4)
ÁÁÁÁ
V
LTP(Tx
)
0.3 x V
DD
V
Tx Input High Voltage Threshold (R
ISO
= 510 ) (Note 5)
ÁÁÁÁ
V
UTP(Tx)
0.7 x V
DD
V
Tx Pull–Up Current (Note 6)
ÁÁÁÁ
I
PU(Tx)
–40
–2.0
µA
Rx Output Low Voltage Threshold (R
ISO
= 510 , Tx = 0.2 VDD,
Rx Sinking 1.0 mA)
ÁÁÁÁ
V
L(Rx)
0.2 V
DD
V
ББББББББББББББББББ
Á
Rx Output High Voltage Threshold (R
ISO
= 510 Ω, Tx = 0.8 VDD,
Rx Sourcing 250 µA)
ÁÁÁÁ
ÁÁÁ
Á
V
H(Rx)
ÁÁ
Á
0.8 V
DD
Á
Á
ÁÁÁ
Á
Á
Á
V
Thermal Shutdown (Note 7)
ÁÁÁÁ
T
LIM
150
170
°C
NOTES 3.Enable pin has an internal current pull–down equivalent to greater than 50 k.
4.Measured by ramping Tx down from 0.7 VDD to 0.3 VDD and noting Tx value at which ISO falls below 0.2 VBB.
5. Measured by ramping Tx up from 0.3 VDD to 0.7 VDD and noting the value at which ISO rises above 0.9 VBB.
6.Tx pin has internal current pull–up equivalent to greater than 50 k. Pull–Up current measure with Tx pin at 0.7 VDD.
7.Thermal Shutdown performance (T
LIM
) is guaranteed by design but not production tested.
ELECTRICAL CHARACTERISTICS (Characteristics noted under conditions of 4.75 V V
DD
5.25 V, 8.0 V VBB, HSIP 18.0 V,
–40°C TC 125°C, unless otherwise noted.)
Characteristic
Symbol Min Typ Max Unit
ISO I/O
Input Low Voltage Threshold (R
ISO
= 0 , Tx = 0.8 VDD) (Note 1)
ÁÁÁÁ
V
LTP(ISO)
0.4 x V
BB
V
Input High Voltage Threshold (R
ISO
= 0 , Tx = 0.8 VDD) (Note 2)
ÁÁÁÁ
V
UTP(ISO)
0.8 x V
BB
V
Input Hysteresis (Note 3)
ÁÁÁÁ
V
Hys(ISO)
0.01 x V
BB
0.1 x V
BB
V
Internal Pull–Up Current (Note 4)
ÁÁÁÁ
I
PU(ISO)
–5.0
–90
µA
(R
ISO
= , Tx = 0.8 VDD, V
ISO
= 0.5 VBB)
ББББББББББББББББББ
Short Circuit Current Limit (Note 5) (R
ISO
= 0 Ω, Tx = 0.4 VDD, V
ISO
= VBB)
ÁÁÁÁ
ÁÁÁ
I
SC(ISO)
ÁÁ50ÁÁÁÁ
1000
Á
mA
ББББББББББББББББББ
Output Low Voltage Threshold (R
ISO
= 510 , Tx = 0.2 VDD)
ÁÁÁÁ
ÁÁÁ
V
L(ISO)
ÁÁÁÁÁÁ
0.125 x V
BB
Á
V
ББББББББББББББББББ
Output High Voltage Threshold (R
ISO
= , Tx = 0.8 VDD)
ÁÁÁÁ
ÁÁÁ
V
H(ISO)
ÁÁ
0.95 x V
BB
ÁÁÁÁÁ
V
ББББББББББББББББББ
Fall Time (Note 6) (R
ISO
= 510 to VBB, C
ISO
= 10 nF to Ground)
ÁÁÁÁ
ÁÁÁ
t
fall(ISO)
ÁÁÁÁÁÁ
2.0
Á
µs
ISO Propagation Delay (Note 7)
ÁÁÁÁ
t
PD(ISO)
µs
High to Low; (R
ISO
= 510 , C
ISO
= 500 pF) (Note 8) 2.0
Low to High; (R
ISO
= 510 , C
ISO
= 500 pF) (Note 9) 2.0
NOTES: 1. ISO ramped from 0.8 VBB to 0.4 VBB, Monitor Rx, Value of ISO voltage at which Rx transitions to 0.3 VDD.
2.ISO ramped from 0.4 VBB to 0.8 VBB, Monitor Rx, Value of ISO voltage at which Rx transitions to 0.7 VDD.
3.Input Hysteresis, V
Hys(ISO)
= V
UTP(ISO)
– V
LTP(ISO)
.
4.ISO Pull–Up has >100 k internal pull–up to VBB.
5.ISO has internal current limit.
6.Time required ISO voltage to transition from 0.8 VBB to 0.2 VBB.
7.Changes in the value of C
ISO
affect the rise and fall time but have minimal effect on Propagation Delay.
8.Step Tx voltage from 0.2 VDD to 0.8 VDD; Time measured from V
UTP(ISO)
until V
ISO
reaches 0.3 VBB.
9.Step Tx voltage from 0.8 VDD to 0.2 VDD; Time measured from V
LTP(ISO)
until V
ISO
reaches 0.7 VBB.
Page 4
MC33290
4
MOTOROLA ANALOG IC DEVICE DATA
D SUFFIX
PLASTIC PACKAGE
CASE 751–05
ISSUE R
(SO–8)
P SUFFIX
PLASTIC PACKAGE
CASE 626–05
ISSUE K
OUTLINE DIMENSIONS
SEATING PLANE
1
4
58
A0.25MCB
SS
0.25MB
M
h
q
C
X 45
_
L
DIM MIN MAX
MILLIMETERS
A 1.35 1.75
A1 0.10 0.25
B 0.35 0.49 C 0.18 0.25 D 4.80 5.00 E
1.27 BSCe
3.80 4.00
H 5.80 6.20 h
0 7
L 0.40 1.25
q
0.25 0.50
__
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. DIMENSIONS ARE IN MILLIMETERS.
3. DIMENSION D AND E DO NOT INCLUDE MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
5. DIMENSION B DOES NOT INCLUDE MOLD PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS OF THE B DIMENSION AT MAXIMUM MATERIAL CONDITION.
D
E
H
A
B
e
B
A1
C
A
0.10
NOTES:
1. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL.
2. PACKAGE CONTOUR OPTIONAL (ROUND OR SQUARE CORNERS).
3. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
14
58
F
NOTE 2
–A–
–B–
–T–
SEATING PLANE
H
J
G
D
K
N
C
L
M
M
A
M
0.13 (0.005) B
M
T
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A 9.40 10.16 0.370 0.400 B 6.10 6.60 0.240 0.260 C 3.94 4.45 0.155 0.175 D 0.38 0.51 0.015 0.020
F 1.02 1.78 0.040 0.070 G 2.54 BSC 0.100 BSC H 0.76 1.27 0.030 0.050
J 0.20 0.30 0.008 0.012 K 2.92 3.43 0.115 0.135
L 7.62 BSC 0.300 BSC M ––– 10 ––– 10 N 0.76 1.01 0.030 0.040
__
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MC33290/D
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