Datasheet MC33169DTB-4R2, MC33169DTB-004 Datasheet (MOTOROLA)

Device

Operating

Temperature Range

Package



SEMICONDUCTOR

TECHNICAL DATA

GaAs POWER AMPLIFIER

SUPPORT IC

ORDERING INFORMATION

MC33169DTB–4.0 TA = –40° to +85°C TSSOP–14

DTB SUFFIX

PLASTIC PACKAGE

CASE 948G

(TSSOP–14)

14

1

PIN CONNECTIONS

Order this document by MC33169/D

V

CC

Idle Mode Input

C2 Input

C1/C2

C1 Input

VO Output

VO Charge Pump

Capacitor+

Gnd

VO Charge Pump

Capacitor–

VBB Double

VBB Triple

Sense Input
Tx Power

Control Input
Gate Drive Output

(T op View)

1

2

3

4

5

6

7

14

13

12

11

10

9

8

1

MOTOROLA ANALOG IC DEVICE DATA

  
 

The MC33169 is a support IC for GaAs Power Amplifier Enhanced FETs
used in hand–held telephones such as GSM and PCS. This device provides
negative voltages for full depletion of Enhanced MESFETs as well as a
priority management system of drain switching, ensuring that the negative
voltage is always present before turning “on” the Power Amplifier. Additional
features include an idle mode input and a direct drive of the N–Channel drain
switch transistor. This product is available in a 4.0 V version intended for
control of the RF Power Amplifier in GSM, DCS1800 and PCS applications.

• Negative Regulated Output for Full Depletion of GaAs MESFETs

• Drain Switch Priority Management Circuit

• CMOS Compatible Inputs

• Idle Mode Input (Standby Mode) for Very Low Current Consumption

• Output Signal Directly Drives N–Channel FET

• Low Startup and Operating Current

Simplified Block Diagram

VBB Double

C3

V

CC

+–C1–+

C2

V

BB

Triple

C4

+
–

Tx Power

Control

Input

Idle

Mode Input

Gnd

C

p

+–

V

O

Output

(–4.0 V)

C

i

R

f

C

f

+–

+

RF
In

RF
Out

+

V

Battery

(2.7 to 7.0 V)

Gate Drive Output

Sense Input

V

BB

Generator

(Voltage Tripler)

Priority

Management

Negative

Generator

Charge

Pump

Power Amplifier

Sense

MC33169

MMSF4N01HD

21 14

8

10

457

6

13

9

3

11

+

12

This device contains 148 active transistors.

 Motorola, Inc. 1998 Rev 2

MC33169

2

MOTOROLA ANALOG IC DEVICE DATA

MAXIMUM RATINGS

Rating Pin Symbol Value Unit

Power Supply Voltage 14 V

CC

9.5 V

Tx Power Control Input 9 VT

x

V

CC

V

Idle Mode Input 13 V

i

V

CC

V

Sense Input 10 V

Sense

–5.0 to 0 V

Negative Generator Output Source Current 4 I

SS

20 mA

Charge Pump Capacitor Current – I

max

60 mA

Diode Forward Current – I

Fmax

60 mA

Gate Drive Output Current 8 I

GO

5.0 mA

Power Dissipation and Thermal Characteristics –

Maximum Power Dissipation @ TA = 50°C P

D

417 mW

Thermal Resistance, Junction–to–Air R

θJA

240 °C/W

Operating Junction Temperature T

J

+150 °C

Operating Ambient Temperature – T

A

–40 to +85 °C

Storage Temperature Range – T

stg

–60 to +150 °C

NOTE: ESD data available upon request.

MC33169–4.0

ELECTRICAL CHARACTERISTICS (V

CC

= 4.8 V . For typical values TA = 25°C, for min/max values TA is the operating

ambient temperature range that applies, unless otherwise noted.)

Characteristic

Pin Symbol Min Typ Max Unit

VBB GENERATOR (VOLTAGE TRIPLER)

Oscillator Frequency – f

osc

90 100 110 kHz
Oscillator Duty Cycle – DC 35 50 65 %
Output Voltage (VCC = 3.0 V , IO = 3.0 mA) Double Voltage 12 V

BBD

4.6 5.0 – V

Output Voltage (VCC = 3.0 V , IO = 3.0 mA) Triple V oltage 11 V

BBT

6.1 7.0 –

Output Voltage (VCC = 7.2 V , IO = 3.0 mA) Triple Voltage 11 V

BBT

– 11.2 –

NEGATIVE GENERATOR OUTPUT

Output Voltage (IO = 3.0 mA) 4 V

O

–3.75 –4.0 –4.25 V

Output Voltage Ripple with Filter (Rf = 33 Ω, Cf = 4.7 µF) 4 V

r

mVpp

(IO = 0 to 5.0 mA) – 2.0 –

PRIORITY MANAGEMENT SECTION

Idle Mode Input 13

Input Voltage High State (Logic 1) V

IH

2.0 – VCC+0.2 V

Input Voltage Low State (Logic 0) V

IL

0 – 0.5 V

Input Current High State (Logic 1) I

IH

10 – 80 µA

Input Current Low State (Logic 0), i.e. Standby Mode I

IL

– – 1.0 µA

Tx Power Control Input 9

Input Voltage Range VT

x

0 – 3.1 V

Input Voltage “Of f” State (Zero RF Output Level) VT

x(off)

– 0.7 – V

Input Voltage “On” State (Maximum RF Output Level) VT

x(on)

– 2.7 – V

Input Resistance R

in

– 90 – kΩ

Bandwidth (–3.0 dB) B – 1.0 – MHz

Gate Drive Output 8

Voltage (VTx = 0 V) V

GO

– – 0.5 V

Voltage (VTx = 3.0 V) VCC+2.7 – –

Peak Current (Source and Sink) (VTx = 3.0 V) I

GO

– 3.0 – mA

Undervoltage Lockout Voltage on Sense Input (Magnitude) 10 V

sense

–3.0 –3.2 – V

TOTAL DEVICE POWER CONSUMPTION

ICC Operating (VTx = 3.0 V , IO = 3.0 mA) – I

CC

– 10 15 mA

ICC Operating (VTx = 0 V, IO = 3.0 mA) – I

CC

– 12 15 mA

ICC Operating (VTx = 0 V, IO = 0 mA) – 4.0 5.0

Standby Mode (Idle Mode Input = 0 V) – I

CC

– – 1.0 µA

MC33169

3

MOTOROLA ANALOG IC DEVICE DATA

MC33169–4.0

ELECTRICAL CHARACTERISTICS (V

CC

= 2.7 V . For typical values TA = 25°C, for min/max values TA is the operating

ambient temperature range that applies, unless otherwise noted.)

Characteristic

Pin Symbol Min Typ Max Unit

VBB GENERATOR (VOLTAGE TRIPLER)

Oscillator Frequency – f

osc

90 100 110 kHz
Oscillator Duty Cycle – DC 35 50 65 %
Output Voltage (VCC = 3.0 V , IO = 3.0 mA) V

Double Voltage 12 V

BBD

4.6 5.0 –

Triple V oltage 11 V

BBT

6.1 7.0 –

Triple V oltage (VCC = 7.2 V , IO = 3.0 mA) 11 V

BBT

– 11.2 –

NEGATIVE GENERATOR OUTPUT

Output Voltage (IO = 1.0 mA) 4 V

O

–3.75 –4.0 –4.25 V

Output Voltage Ripple with Filter (Rf = 33 Ω, Cf = 4.7 µF) 4 V

r

mVpp

(IO = 0 to 5.0 mA) – 2.0 –

PRIORITY MANAGEMENT SECTION

Idle Mode Input 13

Input Voltage High State (Logic 1) V

IH

2.0 – VCC+0.2 V

Input Voltage Low State (Logic 0) V

IL

0 – 0.5 V

Input Current High State (Logic 1) I

IH

10 – 80 µA

Input Current Low State (Logic 0), i.e. Standby Mode I

IL

– – 1.0 µA

Tx Power Control Input 9

Input Voltage Range VT

x

0 – 3.0 V

Input Voltage “Of f” State (Zero RF Output Level) VT

x(off)

– 0.7 – V

Input Voltage “On” State (Maximum RF Output Level) VT

x(on)

– 2.7 – V

Input Resistance R

in

– 90 – kΩ

Bandwidth (–3.0 dB) B – 1.0 – MHz

Gate Drive Output 8

Voltage (VTx = 0 V) V

GO

– – 0.5 V

Voltage (VTx = 3.0 V) VCC+2.7 – –

Peak Current (Source and Sink) (VTx = 3.0 V) I

GO

– 3.0 – mA

Undervoltage Lockout Voltage on Sense Input (Magnitude) 10 V

sense

–3.0 –3.2 – V

TOTAL DEVICE POWER CONSUMPTION

ICC Operating (VTx = 3.0 V) 14 I

CC

mA
(IO = 3.0 mA) – – 15
(IO = 1.0 mA) – – 9.0

ICC Operating (VTx = 0 V) 14 I

CC

mA
(IO = 3.0 mA) – – 13
(IO = 1.0 mA) – – 9.0
(IO = 0 mA) – 4.5 6.0

Standby Mode (Idle Mode Input = 0 V) 14 I

CC

– – 1.0 µA

PRIORITY MANAGEMENT TRUTH TABLE

Control Inputs Outputs

Idle Mode Tx Power Control V

O

Gate Drive

0
1
0
1

0
0
1
1

Off

–4.0 V

Off

–4.0 V

0.5 V max

0.5 V max

0.5 V max

VCC + 2.7 V min

MC33169

4

MOTOROLA ANALOG IC DEVICE DATA

PIN FUNCTION DESCRIPTION

Pin Name Description

1 C2 Input This is the positive pin for the charge pump capacitor in the voltage doubler.
2 C1/C2 This is the negative pin for the charge pump capacitors.
3 C1 Input This is the positive pin for the charge pump capacitor in the voltage tripler.
4 VO Output It delivers a regulated negative voltage of –4.0 V . It can source an output current in excess of 5.0 mA.
5 VO Charge Pump

Capacitor +

This is the positive pin for the capacitor in the inverting charge pump.

6 Gnd This pin is Ground for both signal and power circuitry.
7 VO Charge Pump

Capacitor –

This is the negative pin for the capacitor in the inverting charge pump.

8 Gate Drive Output This is the output of the gate amplifier which directly drives the gate of an N–Channel MOSFET. It can

sink and source peak currents up to 3.0 mA.

9 Tx Power Control

Input

The input signal applied on this pin controls the N–Channel switching MOSFET in follower mode and
therefore, linearly controls the RF output voltage.

10 Sense Input Pin It senses the negative voltage directly on the Power Amplifier. It is also the input pin of an internal

Undervoltage Lockout circuit which blocks the switching of the N–Channel MOSFET if the sensed
voltage is more positive than –3.0 V .

11 VBB Triple This is the positive pin of the output filter capacitor in the voltage tripler. The triple voltage at that pin is

used internally to supply the inverting charge pump and the gate amplifier.
12 VBB Double This is the positive pin of the output filter capacitor in the voltage doubler.
13 Idle Mode Input This pin is used to set the circuit in Low Power Consumption Standby mode. It is CMOS compatible, i.e.

a voltage lower than 0.5 V applied on this pin makes the device go into Standby mode in which the

current consumption is lower than 1.0 µA. The MC33169 is then awakened by a voltage higher than

2.0 V applied on that pin.

14 V

CC

This is the supply input pin for the MC33169, VCC voltage ranges from 2.7 V to 7.2 V .

Figure 1. MC33169 Representative Block Diagram

123

C2 C1

VBB Double

12

C

d

9

T

x(on)

GaAs
PA

RF OutRF In

10 V

sense

4576 Gnd

C

p

C

n

V

O

Negative

Charge Pump

Negative Regulator
(–4.0)

Gate
Amplifier

Oscillator

Positive

Charge Pump

Positive
Regulator

14

V

CC

VBB Triple

11

13

Idle Mode

Input

C

t

+V

Battery

V

Gout

8

V

DD

UVLO

Voltage

Reference

Standby

Circuit

Priority

Management

MC33169

5

MOTOROLA ANALOG IC DEVICE DATA

Figure 2. Operating Current versus Temperature Figure 3. Operating Current versus Temperature

Figure 4. Operating Current versus Temperature Figure 5. Operating Current versus Temperature

Figure 6. Output Voltage versus Temperature Figure 7. Output Voltage versus Temperature

TA, AMBIENT TEMPERATURE (°C)TA, AMBIENT TEMPERATURE (°C)

–50

TA, AMBIENT TEMPERATURE (

°

C)

TA, AMBIENT TEMPERATURE (

°

C)

TA, AMBIENT TEMPERATURE (

°

C)

TA, AMBIENT TEMPERATURE (

°

C)

V

SS

, OUTPUT VOL TAGE (V) I

CC

, OPERATING (mA)

I

CC

, OPERATING (mA)

I

CC

, OPERATING (mA)

I

CC

, OPERATING (mA)

OUTPUT VOLTAGE (V)

5.0

4.5

4.0

3.5

3.0

2.5
–25 0 25 50 75 100

VCC = 4.8 V

VCC = 2.7 V

15

–50 –25 0 25 50 75 100

VTx = 0 V
IO = 0 mA

VTx = 0 V
IO = 0 mA

15

14

13

12

16

–50 –25 0 25 50 75 100

VCC = 4.8 V

VTx = 3.0 V
IO = 3.0 mA

VTx = 3.0 V

VTx = 0 V

VCC = 2.7 V
IO = 1.0 mA

8.0

7.6

7.2

6.8

6.4

6.0
–50 –25 0 25 50 75 100

–4.03

–4.025

–4.02

–4.015

–4.01

–4.005

–4.0

–4.035

–4.04

–50 –25 0 25 50 75 100

ISS = 1.0 mA

VCC = 2.7 V

–4.0

–3.98

–3.96

–3.94

–4.04

–50 –25 0 25 50 75 100

–4.02

VCC = 4.8 V

VCC = 2.7 V

VCC = 4.8 V

VCC = 2.7 V

ISS = 3.0 mA

ISS = 3.0 mA

14

13

12

11

10

MC33169

6

MOTOROLA ANALOG IC DEVICE DATA

Figure 8. Output Voltage versus Load Current

Figure 9. VTx Control Voltage versus Gate

Drive Output Voltage

VTx, POWER CONTROL INPUT VOLTAGE (V)

–4.03

–4.025

–4.02

–4.015

–4.01

–4.035

–4.04

0

V

GO

, GATE DRIVE OUTPUT VOLTAGE (V)

OUTPUT VOLTAGE (V)

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

8.0

7.0

6.0

5.0

4.0

3.0

2.0

1.0
0

0 0.5 1.0 1.5 2.0 2.5 3.0

85°C

25°C

–25°C

0°C

LOAD CURRENT (mA)

OPERA TING DESCRIPTION

The MC33169 is a power amplifier support IC that is
designed to properly switch “on” or “off” a MESFET Power
Amplifier either manually or by microprocessor. Controlling
the power drain of the RF Amplifier extends operating battery
life in many portable systems.

Outputs

The IC is designed to provide a –4.0 V bias to the gate of
the RF Ampllifier MESFET devices prior to application of a
positive battery voltage to the drain. The negative output
voltage can provide up to 5.0 mA of current. The positive
voltage control requires an external N–Channel logic level
MOSFET, connected as a source follower. The Gate Drive
Output, Pin 8, can source or sink 3.0 mA to the external
MOSFET. The low drive current slows the MOSFET

switching speed, thereby minimizing voltage glitches on the
VCC line which could cause disturbances to other circuitry.

Inputs

A Sense Input, Pin 10, protects the Power Amplifier load
by monitoring the level of the negative output voltage. If the
negative voltage magnitude falls below a preset level, 3.2 V
typical, an undervoltage lockout circuit disables the external
MOSFET gate drive.

The Tx Power Control Input controls the N–Channel
external switching MOSFET in source follower mode, which
allows linear control of the RF Output voltage level.

The Idle mode input is CMOS compatible, allowing the RF
Amplifier to be placed in a standby mode, drawing less than

1.0 µA from the power source.

MC33169

7

MOTOROLA ANALOG IC DEVICE DATA

MRF IC 093

MC33169

Figure 10. Class 4 GSM with a Two–Stage Integrated Power Amplifier (I.P.A.)

C2 0.1

C1 0.1

Cp 1.0

MMBD701

LT1

14
13
12
11
10

9
8

1
2
3
4
5
6
7

5
6
7
8

4
3
2
1

8
7
6
5
4
3
2
1

9
10
11
12
13
14
15
16

3.0 V

0V

Idle

V

Batt

= 4.8 V
(4 cells

NlCd/NIMH)

Tx Power

Control

Input

3.0 V

0V

C3 1.0

C4 1.0

MMSF4N01HD

Drain

G
S

.047 47 pF

VG2 tune
VG1 tune

8.2 nH

50

Ω

In

6.8 pF

3.3 k

1.0 k

In

Out
Out

Grounded Backside

R

F

330

5.6 pF 5.6 pF

47 pF

50

Ω

Out

4 mm2 mm

47 pF .047

–4.0 V

30

Ω

30

Ω

Ci 0.22

100

100

S

C

f

0.22

68

Figure 11. Transfer Characteristic for

Gate Drive Output

VTx (V)

1.4

0 0.5 1.0 1.5 2.0 2.5

1.2

1.0

0.8

0.6

0.4

0.2
0

IPA RF

OUT

(Vrms)

TA = 25°C
V

Batt

= 4.8 V

V

Idle

= 3.0 V

V

Batt

= 4.8 V
Pin = 10 dBm
V

Idle

= 3.0 V

V

ramp

: 40 Hz sinusoidal voltage

set for 95% AM depth on RF

Peak output
power: 34.6 dBm

MC33169

8

MOTOROLA ANALOG IC DEVICE DATA

CURVES RELATED TO APPLICATION GSM CLASS 4

Output RF

Voltage

Figure 12. RF Output Voltage (40 Hz/95% AM) and

VTx Driving Voltage

Figure 13. Idle, PA Drain, RF Output and V

O

Voltages During a Burst Period

VT

x

AND RF OUTPUT (V)

–50 ms –25 ms 0 s

TIMEBASE = 5.0 ms/DIV

VERTICAL SCALE = 0.5 V/DIV

V

T

VT

x

–0 V

0 V
0 V

–350 µs 150 µs 850 µs

TIMEBASE = 5.0

µ

s/DIV

VERTICAL SCALE = 0.5 V/DIV

V

O

0 V

Idle Voltage

VT

x

Output RF Voltage

Negative
Voltage

Figure 14. RF Output Voltage, PA Drain Voltage

and VTx Driving Voltage, During Fall Time

Figure 15. RF Output Voltage, PA Drain Voltage and

VTx Driving Voltage, During Rise Time

–13.4 µs 11.6 µs 36.6 µs

TIMEBASE = 5.0

µ

s/DIV

VERTICAL SCALE = 0.5 V/DIV

–13.4

µ

s 11.6 µs 36.6 µs

VERTICAL SCALE = 0.5 V/DIV

VT

x

PA Drain
Voltage

Output
RF Voltage

VT

x

PA Drain
Voltage

Output
RF Voltage

MC33169

9

MOTOROLA ANALOG IC DEVICE DATA

MC33169

Figure 16. AMPS version with MRFIC0913, Integrated Power Amplifier (I.P.A.)

C2 0.1

C1 0.1

Cp 1.0

MMBD701

LT1

14
13
12
11
10

9

8

1
2
3
4
5
6

7

5
6
7
8

4
3
2
1

8
7
6
5
4
3
2
1

9
10
11
12
13
14
15
16

3.0 V

0V

Idle

V

Batt

= 3.6 V
(3 cells

NlCd/NIMH)

Tx Power

Control

Input

3.0 V

0V

C3 1.0

C4 1.0

MMSF4N01HD

Drain

G
S

.047 68 pF

VG2 tune
VG1 tune

10 nH

50

Ω

In

6.8 pF

3.3 k

1.0 k

In

Out
Out

Grounded Backside

R

f

330

5.6 pF 5.6 pF

68 pF

50

Ω

Out

7 mm2.5 mm

68 pF .047

–4.0 V

30

Ω

30

Ω

Ci 0.22

100

100

MRFIC0913

S

C

f

0.22

68

Figure 17. MC33169 with GaAs RF Power Amplifier

MC33169

C2 0.1

C1 0.1

Cp 1.0

MMBD701

LT1

14
13
12
11
10

9
8

1
2
3
4
5
6

7

5
6
7
8

4
3
2
1

3.0 V

0V

Idle

Tx Power

Control

Input

V

Batt

3.0 V

0V

C3 1.0

C4 1.0

MMSF4N01HD

Drain

G
S

R

f

330

C

f

0.22

–4.0 V

RF In RF Out

V

DD

V

O

GaAs Power Amplifier

50 Ω In 50 Ω Out

Ci 0.22

100

100

S

68

MC33169

10

MOTOROLA ANALOG IC DEVICE DATA

DTB SUFFIX

PLASTIC PACKAGE

CASE 948G–01

(TSSOP–14)

ISSUE O

OUTLINE DIMENSIONS

DIM MIN MAX MIN MAX

INCHESMILLIMETERS

A 4.90 5.10 0.193 0.200
B 4.30 4.50 0.169 0.177
C ––– 1.20 ––– 0.047
D 0.05 0.15 0.002 0.006
F 0.50 0.75 0.020 0.030
G 0.65 BSC 0.026 BSC
H 0.50 0.60 0.020 0.024
J 0.09 0.20 0.004 0.008

J1 0.09 0.16 0.004 0.006

K 0.19 0.30 0.007 0.012

K1 0.19 0.25 0.007 0.010

L 6.40 BSC 0.252 BSC

M 0 8 0 8

NOTES:

1 DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.
2 CONTROLLING DIMENSION: MILLIMETER.
3 DIMENSION A DOES NOT INCLUDE MOLD FLASH,

PROTRUSIONS OR GATE BURRS. MOLD FLASH

OR GATE BURRS SHALL NOT EXCEED 0.15

(0.006) PER SIDE.
4 DIMENSION B DOES NOT INCLUDE INTERLEAD

FLASH OR PROTRUSION. INTERLEAD FLASH OR

PROTRUSION SHALL NOT EXCEED

0.25 (0.010) PER SIDE.

5 DIMENSION K DOES NOT INCLUDE DAMBAR

PROTRUSION. ALLOWABLE DAMBAR

PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN

EXCESS OF THE K DIMENSION AT MAXIMUM

MATERIAL CONDITION.
6 TERMINAL NUMBERS ARE SHOWN FOR

REFERENCE ONLY.
7 DIMENSION A AND B ARE TO BE DETERMINED

AT DATUM PLANE –W–.

____

S

U0.15 (0.006) T

2X L/2

S

U

M

0.10 (0.004) V

S

T

L

–U–

SEATING
PLANE

0.10 (0.004)

–T–

SECTION N–N

DETAIL E

J

J1

K

K1

DETAIL E

F

M

–W–

0.25 (0.010)

8

14

7

1

PIN 1
IDENT.

H

G

A

D

C

B

S

U0.15 (0.006) T

–V–

14X REFK

N

N

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
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Mfax is a trademark of Motorola, Inc.

How to reach us:
USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; JAPAN: Motorola Japan Ltd.; SPD, Strategic Planning Office, 141,

P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan. 81–3–5487–8488

Customer Focus Center: 1–800–521–6274
Mfax: [e-mail] – TOUCHTONE 1–602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

Moto rola Fax Back Sys tem – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

– http://sps.motorola.com/mfax/

HOME PAGE: http://motorola.com/sps/

MC33169/D

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