Datasheet MC33102DR2 Datasheet (MOTOROLA)

Page 1
Device
Operating
Temperature Range
Package

SEMICONDUCTOR
TECHNICAL DATA
DUAL SLEEP–MODE
ORDERING INFORMATION
MC33102D MC33102P
TA = – 40° to +85°C
SO–8
Plastic DIP
Order this document by MC33102/D
D SUFFIX
PLASTIC PACKAGE
CASE 751
(SO–8)
P SUFFIX
PLASTIC PACKAGE
CASE 626
8
1
1Output 1 V
CC
Output 2
PIN CONNECTIONS
(Dual, Top View)
8
1
Inputs 1
V
EE
Inputs 2
2 3 4
1
2
5
6
7
8
1
MOTOROLA ANALOG IC DEVICE DATA
    
The MC33102 dual operational amplifier is an innovative design concept employing Sleep–Mode technology. Sleep–Mode amplifiers have two separate states, a sleepmode and an awakemode. In sleepmode, the amplifier is active and waiting for an input signal. When a signal is applied causing the amplifier to source or sink 160 µA (typically) to the load, it will automatically switch to the awakemode which offers higher slew rate, gain bandwidth, and drive capability.
Two States: “Sleepmode” (Micropower) and “Awakemode”
(High Performance)
Switches from Sleepmode to Awakemode in 4.0 µs when Output Current
Exceeds the Threshold Current (RL = 600 )
Independent Sleepmode Function for Each Op Amp
Standard Pinouts – No Additional Pins or Components Required
Sleepmode State – Can Be Used in the Low Current Idle State as a
Fully Functional Micropower Amplifier
Automatic Return to Sleepmode when Output Current Drops Below
Threshold
No Deadband/Crossover Distortion; as Low as 1.0 Hz in the Awakemode
Drop–in Replacement for Many Other Dual Op Amps
ESD Clamps on Inputs Increase Reliability without Affecting Device
Operation
Sleep–Mode is a trademark of Motorola, Inc.
TYPICAL SLEEPMODE/AWAKEMODE PERFORMANCE
Characteristic
Sleepmode
(Typical)
Awakemode
(Typical) Unit
Low Current Drain 45 750 µA Low Input Offset Voltage 0.15 0.15 mV High Output Current Capability 0.15 50 mA Low T.C. of Input Offset Voltage 1.0 1.0 µV/°C High Gain Bandwidth (@ 20 kHz) 0.33 4.6 MHz High Slew Rate 0.16 1.7 V/µs Low Noise (@ 1.0 kHz) 28 9.0
nV/ Hz
MAXIMUM RATINGS
Ratings Symbol Value Unit
Supply Voltage (VCC to VEE) V
S
+36 V
Input Differential Voltage Range Input Voltage Range
V
IDR
V
IR
(Note 1) V
Output Short Circuit Duration (Note 2) t
SC
(Note 2) sec
Maximum Junction Temperature
Storage Temperature
T
J
T
stg
+150
–65 to +150
°C
Maximum Power Dissipation P
D
(Note 2) mW
NOTES: 1. Either or both input voltages should not exceed VCC or VEE.
2.Power dissipation must be considered to ensure maximum junction temperature (TJ) is not exceeded (refer to Figure 1).
Motorola, Inc. 1996 Rev 0
Page 2
MC33102
2
MOTOROLA ANALOG IC DEVICE DATA
Simplified Block Diagram
Fractional
Load Current
Detector
% of I
L
Current
Threshold
Detector
Awake to
Sleepmode
Delay Circuit
Buffer Buffer
I
ref
C
Storage
I
Hysteresis
I
Enable
Enable
I
awake
Sleepmode
Current
Regulator
Awakemode
Current
Regulator
I
sleep
V
in
I
L
V
out
R
L
I
Bias
Op Amp
DC ELECTRICAL CHARACTERISTICS (V
CC
= +15 V , VEE = –15 V , TA = 25°C, unless otherwise noted.)
Characteristics
Figure Symbol Min Typ Max Unit
Input Offset Voltage (RS = 50 , VCM = 0 V, VO = 0 V)
Sleepmode
TA = +25°C TA = –40° to +85°C
Awakemode
TA = +25°C TA = –40° to +85°C
2 VIO
— —
— —
0.15 —
0.15 —
2.0
3.0
2.0
3.0
mV
Input Offset Voltage Temperature Coefficient
(RS = 50 , VCM = 0 V, VO = 0 V) TA = –40° to +85°C (Sleepmode and Awakemode)
3 VIO/T
1.0
µV/°C
Input Bias Current (VCM = 0 V, VO = 0 V)
Sleepmode
TA = +25°C TA = –40° to +85°C
Awakemode
TA = +25°C TA = –40° to +85°C
4, 6 I
IB
— —
— —
8.0 —
100
50 60
500 600
nA
Input Offset Current (VCM = 0 V, VO = 0 V)
Sleepmode
TA = +25°C TA = –40° to +85°C
Awakemode
TA = +25°C TA = –40° to +85°C
IIO
— —
— —
0.5 —
5.0 —
5.0
6.0
50 60
nA
Page 3
MC33102
3
MOTOROLA ANALOG IC DEVICE DATA
DC ELECTRICAL CHARACTERISTICS (V
CC
= +15 V , VEE = –15 V , TA = 25°C, unless otherwise noted.)
Characteristics
Figure Symbol Min Typ Max Unit
Common Mode Input Voltage Range
(VIO = 5.0 mV, VO = 0 V)
Sleepmode and Awakemode
5 V
ICR
–13
–14.8 +14.2
+13
V
Large Signal Voltage Gain
Sleepmode (RL = 1.0 M)
TA = +25°C TA = –40° to +85°C
Awakemode (VO = ±10 V, RL = 600 )
TA = +25°C TA = –40° to +85°C
7 A
VOL
25 15
50 25
200
700
— —
— —
kV/V
Output Voltage Swing (VID = ±1.0 V)
Sleepmode (VCC = +15 V , VEE = –15 V)
RL = 1.0 M RL = 1.0 M
Awakemode (VCC = +15 V , VEE = –15 V)
RL = 600 RL = 600 RL = 2.0 k RL = 2.0 k
Awakemode (VCC = +2.5 V , VEE = –2.5 V)
RL = 600 RL = 600
8, 9, 10
V
O+
V
O–
V
O+
V
O–
V
O+
V
O–
V
O+
V
O–
+13.5
+12.5
+13.3
+1.1
+14.2 –14.2
+13.6 –13.6
+14 –14
+1.6 –1.6
–13.5
–12.5
–13.3
–1.1
V
V
Common Mode Rejection (VCM = ±13 V)
Sleepmode and Awakemode
11 CMR
80 90
dB
Power Supply Rejection (VCC/VEE = +15 V/–15 V ,
5.0 V/–15 V , +15 V/–5.0 V) Sleepmode and Awakemode
12 PSR
80 100
dB
Output Transition Current
Sleepmode to Awakemode (Source/Sink)
(VS = ±15 V) (VS = ±2.5 V)
Awakemode to Sleepmode (Source/Sink)
(VS = ±15 V) (VS = ±2.5 V)
13, 14
I
TH1
I
TH2
200 250
— —
160 200
142 180
— —
90
140
µA
Output Short Circuit Current (Awakemode)
(VID = ±1.0 V , Output to Ground)
Source Sink
15, 16 ISC
50 50
110 110
— —
mA
Power Supply Current (per Amplifier) (ACL = 1, VO = 0V)
Sleepmode (VS = ±15 V)
TA = +25°C TA = –40° to +85°C
Sleepmode (VS = ±2.5 V)
TA = +25°C TA = –40° to +85°C
Awakemode (VS = ±15 V)
TA = +25°C TA = –40° to +85°C
17 I
D
— —
— —
— —
45 48
38 42
750 800
65 70
65 —
800 900
µA
Page 4
MC33102
4
MOTOROLA ANALOG IC DEVICE DATA
AC ELECTRICAL CHARACTERISTICS
(V
CC
= +15 V , VEE = –15 V , TA = 25°C, unless otherwise noted.)
Characteristics
Figure Symbol Min Typ Max Unit
Slew Rate (Vin = –5.0 V to +5.0 V, CL = 50 pF, AV = 1.0)
Sleepmode (RL = 1.0 M) Awakemode (RL = 600 )
18 SR
0.10
1.0
0.16
1.7
— —
V/µs
Gain Bandwidth Product
Sleepmode (f = 10 kHz) Awakemode (f = 20 kHz)
19 GBW
0.25
3.5
0.33
4.6
— —
MHz
Sleepmode to Awakemode Transition T ime
(ACL = 0.1, Vin = 0 V to +5.0 V)
RL = 600 RL = 10 k
20, 21 t
tr1
— —
4.0
15
— —
µs
Awakemode to Sleepmode Transition T ime 22 t
tr2
1.5 sec
Unity Gain Frequency (Open Loop)
Sleepmode (RL = 100 k, CL = 0 pF) Awakemode (RL = 600 , CL = 0 pF)
f
U
— —
200
2500
— —
kHz
Gain Margin
Sleepmode (RL = 100 k, CL = 0 pF) Awakemode (RL = 600 , CL = 0 pF)
23, 25 A
M
— —
13 12
— —
dB
Phase Margin
Sleepmode (RL = 100 k, CL = 0 pF) Awakemode (RL = 600 , CL = 0 pF)
24, 26
M
— —
60 60
— —
Degrees
Channel Separation (f = 100 Hz to 20 kHz)
Sleepmode and Awakemode
29 CS
120
dB
Power Bandwidth (Awakemode)
(VO = 10 Vpp, RL = 100 k, THD 1%)
BW
P
20
kHz
Total Harmonic Distortion (VO = 2.0 Vpp, AV = 1.0)
Awakemode (RL = 600 )
f = 1.0 kHz f = 10 kHz f = 20 kHz
30 THD
— — —
0.005
0.016
0.031
— — —
%
DC Output Impedance (VO = 0 V, AV = 10, IQ = 10 µA)
Sleepmode Awakemode
31 R
O
— —
1.0 k 96
— —
Differential Input Resistance (VCM = 0 V)
Sleepmode Awakemode
R
in
— —
1.3
0.17
— —
M
Differential Input Capacitance (VCM = 0 V)
Sleepmode Awakemode
C
in
— —
0.4
4.0
— —
pF
Equivalent Input Noise Voltage (f = 1.0 kHz, RS = 100 )
Sleepmode Awakemode
32 e
n
— —
28
9.0
— —
nV/ Hz
Equivalent Input Noise Current (f = 1.0 kHz)
Sleepmode Awakemode
33 i
n
— —
0.01
0.05
— —
pA/ Hz
Page 5
MC33102
5
MOTOROLA ANALOG IC DEVICE DATA
Sleepmode
Awakemode
VCC = +15 V VEE = –15 V TA = 25
°
C
TA, AMBIENT TEMPERATURE (°C)
10.0
, SLEEPMODE INPUT BIAS CURRENT (nA)
IB
I
8.0
6.0
4.0
2.0
0
, AWAKEMODE INPUT BIAS CURRENT (nA)
IB
I
, AWAKEMODE INPUT BIAS CURRENT (nA)
IB
I
Figure 1. Maximum Power Dissipation
versus Temperature
, MAXIMUM POWER DISSIPATION (mW)
D(max)
P
TA, AMBIENT TEMPERATURE (°C)
2500
PERCENT OF AMPLIFIERS (%)
VIO, INPUT OFFSET VOLTAGE (mV)
50
PERCENT OF AMPLIFIERS (%)
TCVIO, INPUT OFFSET VOLTAGE TEMPERATURE COEFFICIENT (µV/°C)
35
, SLEEPMODE INPUT BIAS CURRENT (nA)
IB
I
VCM, COMMON MODE INPUT VOLTAGE (V)
10.5
, INPUT COMMON MODE VOL TAGE RANGE (V)
ICR
V
TA, AMBIENT TEMPERATURE (°C)
V
CC
2000
1500
1000
500
0
40
30
20
10
0
30 25 20 15 10
5.0 0
9.5
8.5
7.5
6.5
100
VCC–0.5
VCC–1.0
VEE+1.0
VEE+0.5
V
EE
–55 –25 0 25 50 85 125–40
–1.0
–5.0 –15 –10 –5.0 0 5.0 1510
–55 –25 0 25 50 85 125
–0.8 –0.6 –0.4 –0.2 0 0.2 0.4 0.6 0.8 1.0
–4.0 –3.0 –2.0 –1.0 0 1.0 2.0 3.0 4.0 5.0
–40
–55 –25 0 25 50 12585–40
MC33102P
MC33102D
204 Amplifiers tested from 3 wafer lots. VCC = +15 V VEE = –15 V TA = 25
°
C
Percent Sleepmode Percent Awakemode
Figure 2. Distribution of Input Offset Voltage
(MC33102D Package)
Figure 3. Input Offset Voltage Temperature
Coefficient Distribution (MC33102D Package)
Percent Sleepmode Percent Awakemode
204 Amplifiers tested from 3 wafer lots. VCC = +15 V VEE = –15 V TA = –40
°
C to 85°C
100
80
60
40
20
0
90
80
70
60
VCC = +15 V VEE = –15 V
VIO = 5.0 mV
VCC = +15 V VEE = –15 V VCM = 0 V
Awakemode
Awakemode
Awakemode
Sleepmode
Sleepmode
Sleepmode
Figure 4. Input Bias Current versus
Common Mode Input Voltage
Figure 5. Input Common Mode Voltage Range
versus Temperature
Figure 6. Input Bias Current versus Temperature
Page 6
MC33102
6
MOTOROLA ANALOG IC DEVICE DATA
V
O
, OUTPUT VOLT AGE (V )
pp
V
O
, OUTPUT VOLTAGE (V )
pp
, OPEN LOOP VOL TAGE GAIN (dB)
VOL
A
TA, AMBIENT TEMPERATURE (°C)
130
VCC, VEE
, SUPPLY VOLTAGE (V)
35
f, FREQUENCY (Hz)
30
RL, LOAD RESISTANCE T O GROUND (
)
30
CMR, COMMON MODE REJECTION (dB)
100 120
120
110
100
90
80
30 25 20 15 10
5 0
25
20
15
10
5.0
0
, OUTPUT VOLTAGE SWING (Vpp)
O
V
25
20
15
10
80
60
40
20
0
f, FREQUENCY (Hz)
PSR, POWER SUPPLY REJECTION (dB)
100
80
60
40
20
0
f, FREQUENCY (Hz)
Figure 7. Open Loop Voltage Gain
versus Temperature
–55 –25 0 25 50 85 125
0 3.0 6.0 9.0 12 1815
100 10
10
–40
1.0 k 10 k 100 k 500 k
5.0 100 1.0 k 10 k
100 1.0 k 10 k 100 k 1.0 M 10 100 1.0 k 10 k 100 k 1.0 M
Sleepmode (RL = 1.0 MΩ)
Awakemode (RL = 1.0 MΩ)
Figure 8. Output Voltage Swing
versus Supply Voltage
Awakemode (RL = 600 Ω)
Sleepmode (RL = 1.0 MΩ)
TA = 25°C
Figure 9. Output Voltage versus Frequency
VCC = +15 V VEE = –15 V AV = +1.0 TA = 25
°
C
Awakemode
(RL = 600
)
Sleepmode
(RL = 1.0 M
)
Figure 10. Maximum Peak–to–Peak Output
Voltage Swing versus Load Resistance
Awakemode
VCC = +15 V VEE = –15 V f = 1.0 kHz TA = 25
°
C
Figure 11. Common Mode Rejection
versus Frequency
Awakemode
Sleepmode
VCC = +15 V VEE = –15 V VCM = 0 V
VCM = ±1.5 V
TA = 25
°
C
+PSR
Awakemode
–PSR
Awakemode
+PSR
Sleepmode
–PSR
Sleepmode
Figure 12. Power Supply Rejection
versus Frequency
VCC = +15 V VEE = –15 V
VCC = ±1.5 V
TA = 25
°
C
Page 7
MC33102
7
MOTOROLA ANALOG IC DEVICE DATA
, OUTPUT SHORT CIRCUIT CURRENT (mA)
SC
I

, CURRENT THRESHOLD ( A)
TH1
I
, OUTPUT SHORT CIRCUIT CURRENT (mA)
SC
I
TA, AMBIENT TEMPERATURE (°C)
, SUPPLY CURRENT PER AMPLIFIER ( A)
D
I
TA, AMBIENT TEMPERATURE (°C)
, SLEW RATE (V/ s)
µ
TA, AMBIENT TEMPERATURE (°C)
VCC, VEE
, SUPPLY VOLTAGE (V)
µ
VCC, VEE
, SUPPLY VOLTAGE (V)

VO
, OUTPUT VOLTAGE (V)
µ
, SUPPLY CURRENT PER AMPLIFIER (mA)
D
I
SR
SLEW RATE (V/ s)
µ
SR,
Figure 13. Sleepmode to Awakemode
Current Threshold versus Supply Voltage
200
190
120 150
60 0.20
190
180
170
160
150
140
180 170 160 150 140 130 120
100
80
60
40
20
0
140 130 120
100
90 80 70
110
55
50
45
40
35
30
0.18
0.16
0.14
0.12
0.10
–55 –25 0 25 50 85 125
–55 –25 0 25 50 85 125 –55 –25 0 25 50 85 125
3.0 6.0 9.0 12 1815 3.0 6.0 9.0 12 1815
0 3.0 6.0 9.0 12 15 –40
–40 –40
1.2
1.0
0.8
0.6
0.4
2.0
1.8
1.6
1.4
1.2
1.0
0.2
0
, CURRENT THRESHOLD ( A)
TH2
I
µ
TA = 25°C
TA = –55°C
TA = 125°C
TA = 25°C
TA = –55°C
TA = 125°C
Source
Sink
VCC = +15 V VEE = –15 V VID =
±
1.0 V
RL < 10
Awakemode
Source
Sink
VCC = +15 V VEE = –15 V VID =
±
1.0 V
RL < 10
Awakemode
Sleepmode (µA)
Awakemode (mA)
VCC = +15 V VEE = –15 V No Load
VCC = +15 V VEE = –15 V
Vin = –5.0 V to +5.0 V
Awakemode (RL = 600 Ω)
Sleepmode (RL = 1.0 MΩ)
Figure 14. Awakemode to Sleepmode
Current Threshold versus Supply Voltage
Figure 15. Output Short Circuit Current
versus Output Voltage
Figure 16. Output Short Circuit Current
versus Temperature
Figure 17. Power Supply Current Per Amplifier
versus Temperature
Figure 18. Slew Rate versus Temperature
Page 8
MC33102
8
MOTOROLA ANALOG IC DEVICE DATA
V
O
R1
R2
Sleepmode
Awakemode
VCC = +15 V VEE = –15 V RT = R1 + R2 VO = 0 V TA = 25
°
C
GBW, GAIN BANDWIDTH PRODUCT (KHz)
TA, AMBIENT TEMPERATURE (°C)
350
, TRANSITION TIME (SEC)
tr2
t
2.0
0
1.5
1.0
0.5
, GAIN MARGIN (dB)
m
A
15
, PHASE MARGIN (DEG)
m
70
300
250
200
5.0
4.5
4.0
3.5
VCC,
VEE
, SUPPLY VOLTAGE (V)
13
11
9.0
7.0
5.0 RT, DIFFERENTIAL SOURCE RESISTANCE (
)
60 50 40 30 20 10
0
RT, DIFFERENTIAL SOURCE RESISTANCE (
)
GBW, GAIN BANDWIDTH PRODUCT (KHz)
V
O
R1
R2
t, TIME (5.0 µs/DIV)
, PEAK VOLTAGE (1.0 V/DIV)
P
V
RL = 10 k
, PEAK VOLTAGE (1.0 V/DIV)
P
V
t, TIME (2.0 µs/DIV)
RL = 600
Figure 19. Gain Bandwidth Product
versus Temperature
–55 –25 0 25 50 85 125–40
3.0 6.0 9.0 12 1815
10 100 1.0 k 10 k 10 100 1.0 k 10 k 100 k
Sleepmode (kHz)
Awakemode (MHz)
VCC = +15 V VEE = –15 V f = 20 kHz
Figure 20. Sleepmode to Awakemode
Transition Time
Figure 21. Sleepmode to Awakemode
Transition Time
Figure 22. Awakemode to Sleepmode
Transition Time versus Supply Voltage
TA = 25°C
TA = –55°C
TA = 125°C
Figure 23. Gain Margin versus Differential
Source Resistance
Figure 24. Phase Margin versus Differential
Source Resistance
Sleepmode
Awakemode
VCC = +15 V VEE = –15 V RT = R1 + R2 VO = 0 V TA = 25
°
C
Page 9
MC33102
9
MOTOROLA ANALOG IC DEVICE DATA
2A
1B
2B
1A
1A) Phase, VS = ±18 V 2A) Phase, VS =
±
2.5 V
1B) Gain, VS =
±
18 V
2B) Gain, VS =
±
2.5 V
TA = 25°C RL = 600
CL < 10 pF Awakemode
CL, OUTPUT LOAD CAPACITANCE (pF)
14
f, FREQUENCY (Hz)
70
CS, CHANNEL SEPARATION (dB)
140
THD, TOT AL HARMONIC DISTORTION (%)
100
, OPEN LOOP GAIN MARGIN (dB)
m
A
, PHASE MARGIN (DEGREES)
m
12 10
8.0
6.0
4.0
2.0 0
CL, OUTPUT LOAD CAPACITANCE (pF)
70 60
50 40 30 20 10
0
, VOLTAGE GAIN (dB)
V
A
50
30
10
–10
–30
1A
2A
1B
2B
, EXCESS PHASE (DEGREES)
θ
, VOLTAGE GAIN (dB)
V
A
70
50
30
10
–10
–30
f, FREQUENCY (Hz)
, EXCESS PHASE (DEGREES)
θ
120 100
80 60
40 20
0
f, FREQUENCY (Hz)
10
1.0
0.1
0.01
0.001 f, FREQUENCY (Hz)
Figure 25. Open Loop Gain Margin versus
Output Load Capacitance
10
10 k
100 1.0 k 10 100 1.0 k 10 k
100 k 1.0 M 10 M 30 k 100 k 1.0 M 10 M
100 1.0 k 10 k 100 k 100 1.0 k 10 k 100 k
Sleepmode
Awakemode
VCC = +15 V VEE = –15 V VO = 0 V
Sleepmode
Awakemode
VCC = +15 V VEE = –15 V VO = 0 V
Figure 26. Phase Margin versus
Output Load Capacitance
Figure 27. Sleepmode Voltage Gain and Phase
versus Frequency
1A) Phase, VS = ±18 V 2A) Phase, VS =
±
2.5 V
1B) Gain, VS =
±
18 V
2B) Gain, VS =
±
2.5 V
TA = 25°C RL = 1.0 M
CL < 10 pF Sleepmode
160
200
240
120
160
200
240
80
120
40
40
80
Figure 28. Awakemode Voltage Gain and
Phase versus Frequency
Figure 29. Channel Separation versus Frequency
VCC = +15 V VEE = –15 V RL = 600
Awakemode
VCC = +15 V VEE = –15 V RL = 600
VO = 2.0 Vpp TA = 25
°
C
Awakemode
AV = +1000
AV = +100
AV = +10
AV = +1.0
Figure 30. Total Harmonic Distortion
versus Frequency
Page 10
MC33102
10
MOTOROLA ANALOG IC DEVICE DATA
, OUTPUT IMPEDANCE ( )
O
Z
250
e , INPUT REFERRED NOISE VOLTAGE (nV/ Hz)
100
1.0
os, PERCENT OVERSHOOT (%)
CL, LOAD CAPACITANCE (pF)
70
200
150
100
50
0
f, FREQUENCY (Hz)
50
10
5.0 f, FREQUENCY (Hz)
0.8
0.6
0.4
0.2
0.1
i , INPUT NOISE CURRENT (pA/ Hz)
f, FREQUENCY (Hz)
60 50 40 30 20 10
0
n
n
V
O
RS
V
O
, PEAK VOLTAGE (5.0 V/DIV)
P
V
t, TIME (50 µs/DIV)
RL =
R
, PEAK VOLTAGE (5.0 V/DIV)
P
V
t, TIME (5.0 µs/DIV)
RL = 600
Figure 31. Awakemode Output Impedance
versus Frequency
10
1.0 k 10 k 1.0 M 10 M100 k
10 100 10 k 100 k1.0 k
10 100 10 k 100 k1.0 k 100 1.0 k
VCC = +15 V VEE = –15 V VCM = 0 V VO = 0 V TA = 25
°
C
Awakemode
AV = 1000
AV = 10
AV = 1.0
AV = 100
Figure 32. Input Referred Noise Voltage
versus Frequency
Sleepmode
Awakemode
VCC = +15 V VEE = –15 V TA = 25
°
C
Figure 33. Current Noise versus Frequency
VCC = +15 V VEE = –15 V TA = 25
°
C
(RS = 10 k)
Awakemode
Sleepmode
Figure 34. Percent Overshoot
versus Load Capacitance
VCC = +15 V VEE = –15 V TA = 25
°
C
Awakemode
(RL = 600
)
Sleepmode
(RL = 1.0 M
)
Figure 35. Sleepmode Large Signal
Transient Response
Figure 36. Awakemode Large Signal
Transient Response
Page 11
MC33102
11
MOTOROLA ANALOG IC DEVICE DATA
t, TIME (50 µs/DIV)
, PEAK VOLTAGE (50 mV/DIV)
P
V
t, TIME (50 µs/DIV)
RL = 600
CL = 0 pF
, PEAK VOLTAGE (50 mV/DIV)
P
V
RL =
R
CL = 0 pF
Figure 37. Sleepmode Small Signal
Transient Response
Figure 38. Awakemode Small Signal
Transient Response
CIRCUIT INFORMATION
The MC33102 was designed primarily for applications where high performance (which requires higher current drain) is required only part of the time. The two–state feature of this op amp enables it to conserve power during idle times, yet be powered up and ready for an input signal. Possible applications include laptop computers, automotive, cordless phones, baby monitors, and battery operated test equipment. Although most applications will require low power consumption, this device can be used in any application where better efficiency and higher performance is needed.
The Sleep–Mode amplifier has two states; a sleepmode and an awakemode. In the sleepmode state, the amplifier is active and functions as a typical micropower op amp. When a signal is applied to the amplifier causing it to source or sink sufficient current (see Figure 13), the amplifier will automatically switch to the awakemode. See Figures 20 and 21 for transition times with 600 and 10 k loads.
The awakemode uses higher drain current to provide a high slew rate, gain bandwidth, and output current capability . In the awakemode, this amplifier can drive 27 Vpp into a 600 load with VS = ±15 V.
An internal delay circuit is used to prevent the amplifier from returning to the sleepmode at every zero crossing. This delay circuit also eliminates the crossover distortion commonly found in micropower amplifiers. This amplifier can process frequencies as low as 1.0 Hz without the amplifier returning to sleepmode, depending on the load.
The first stage PNP differential amplifier provides low noise performance in both the sleep and awake modes, and an all NPN output stage provides symmetrical source and sink AC frequency response.
APPLICATIONS INFORMATION
The MC33102 will begin to function at power supply voltages as low as VS = ±1.0 V at room temperature. (At this voltage, the output voltage swing will be limited to a few hundred millivolts.) The input voltages must range between VCC and VEE supply voltages as shown in the maximum rating table. Specifically, allowing the input to go more
negative than 0.3 V below VEE may cause product damage. Also, exceeding the input common mode voltage
range on either input may cause phase reversal, even if the inputs are between VCC and VEE.
When power is initially applied, the part may start to operate in the awakemode. This is because of the currents generated due to charging of internal capacitors. When this occurs and the sleepmode state is desired, the user will have to wait approximately 1.5 seconds before the device will switch back to the sleepmode. T o prevent this from occurring, ramp the power supplies from 1.0 V to full supply. Notice that the device is more prone to switch into the awakemode when VEE is adjusted than with a similar change in VCC.
The amplifier is designed to switch from sleepmode to awakemode whenever the output current exceeds a preset
current threshold (ITH) of approximately 160 µA. As a result, the output switching threshold voltage (VST) is controlled by the output loading resistance (RL). This loading can be a load resistor, feedback resistors, or both. Then:
VST = (160 µA) × R
L
Large valued load resistors require a large output voltage to switch, but reduce unwanted transitions to the awakemode. For instance, in cases where the amplifier is connected with a large closed loop gain (ACL), the input offset voltage (VIO) is multiplied by the gain at the output and could produce an output voltage exceeding VST with no input signal applied.
Small values of RL allow rapid transition to the awakemode because most of the transition time is consumed slewing in the sleepmode until VST is reached (see Figures 20, 21). The output switching threshold voltage VST is higher for larger values of RL, requiring the amplifier to slew longer in the slower sleepmode state before switching to the awakemode.
Page 12
MC33102
12
MOTOROLA ANALOG IC DEVICE DATA
The transition time (t
tr1
) required to switch from sleep to
awake mode is:
t
tr1
t
D
I
TH
R
L
SR
sleepmode
= Sleepmode slew rate (0.16 V/µs)
= Amplifier delay (<1.0 µs) = Output threshold current for
= more transition (160 µA)
= Load resistance
Where:
= tD = ITH (RL/SR
sleepmode
)
Although typically 160 µA, ITH varies with supply voltage and temperature. In general, any current loading on the output which causes a current greater than ITH to flow will switch the amplifier into the awakemode. This includes transition currents such as those generated by charging load capacitances. In fact, the maximum capacitance that can be driven while attempting to remain in the sleepmode is approximately 1000 pF.
C
L(max)
= ITH/SR
sleepmode = 160 µA/(0.16 V/µs) = 1000 pF
Any electrical noise seen at the output of the MC33102
may also cause the device to transition to the awakemode. T o
minimize this problem, a resistor may be added in series with the output of the device (inserted as close to the device as possible) to isolate the op amp from both parasitic and load capacitance.
The awakemode to sleepmode transition time is controlled by an internal delay circuit, which is necessary to prevent the amplifier from going to sleep during every zero crossing. This time is a function of supply voltage and temperature as shown in Figure 22.
Gain bandwidth product (GBW) in both modes is an important system design consideration when using a sleepmode amplifier. The amplifier has been designed to obtain the maximum GBW in both modes. “Smooth” AC transitions between modes with no noticeable change in the amplitude of the output voltage waveform will occur as long as the closed loop gains (ACL) in both modes are substantially equal at the frequency of operation. For smooth AC transitions:
(A
CLsleepmode
) (BW) < GBW
sleepmode
Where: A
CLsleepmode
= Closed loop gain in
A
CLsleepmode
= the sleepmode
BW = The required system bandwidth
BW = or operating frequency
TESTING INFORMATION
To determine if the MC33102 is in the awakemode or the sleepmode, the power supply currents (ID+ and ID–) must be measured. When the magnitude of either power supply current exceeds 400 µA, the device is in the awakemode. When the magnitudes of both supply currents are less than 400 µA, the device is in the sleepmode. Since the total supply current is typically ten times higher in the awakemode than the sleepmode, the two states are easily distinguishable.
The measured value of ID+ equals the ID of both devices (for a dual op amp) plus the output source current of device A and the output source current of device B. Similarly, the measured value of ID– is equal to the ID– of both devices plus the output sink current of each device. I
out
is the sum
of the currents caused by both the feedback loop and load resistance. The total I
out
needs to be subtracted from the
measured ID to obtain the correct ID of the dual op amp.
An accurate way to measure the awakemode I
out
current
on automatic test equipment is to remove the I
out
current on both Channel A and B. Then measure the ID values before the device goes back to the sleepmode state. The transition will take typically 1.5 seconds with ±15 V power supplies.
The large signal sleepmode testing in the characterization was accomplished with a 1.0 M load resistor which ensured the device would remain in sleepmode despite large voltage swings.
Page 13
MC33102
13
MOTOROLA ANALOG IC DEVICE DATA
D SUFFIX
PLASTIC PACKAGE
CASE 751–05
(SO–8)
ISSUE R
P SUFFIX
PLASTIC PACKAGE
CASE 626–05
ISSUE K
OUTLINE DIMENSIONS
NOTES:
1. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL.
2. PACKAGE CONTOUR OPTIONAL (ROUND OR SQUARE CORNERS).
3. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
14
58
F
NOTE 2
–A–
–B–
–T–
SEATING PLANE
H
J
G
D
K
N
C
L
M
M
A
M
0.13 (0.005) B
M
T
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A 9.40 10.16 0.370 0.400 B 6.10 6.60 0.240 0.260 C 3.94 4.45 0.155 0.175 D 0.38 0.51 0.015 0.020 F 1.02 1.78 0.040 0.070 G 2.54 BSC 0.100 BSC H 0.76 1.27 0.030 0.050
J 0.20 0.30 0.008 0.012
K 2.92 3.43 0.115 0.135
L 7.62 BSC 0.300 BSC M ––– 10 ––– 10 N 0.76 1.01 0.030 0.040
__
SEATING PLANE
1
4
58
A0.25MCB
SS
0.25MB
M
h
q
C
X 45
_
L
DIM MIN MAX
MILLIMETERS
A 1.35 1.75
A1 0.10 0.25
B 0.35 0.49 C 0.18 0.25 D 4.80 5.00 E
1.27 BSCe
3.80 4.00
H 5.80 6.20
h
0 7
L 0.40 1.25
q
0.25 0.50
__
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. DIMENSIONS ARE IN MILLIMETERS.
3. DIMENSION D AND E DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
5. DIMENSION B DOES NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS OF THE B DIMENSION AT MAXIMUM MATERIAL CONDITION.
D
E
H
A
B
e
B
A1
C
A
0.10
Page 14
MC33102
14
MOTOROLA ANALOG IC DEVICE DATA
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MC33102/D
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