Datasheet MC14572BCP Specification

Page 1
MOTOROLA CMOS LOGIC DATA
1
MC14572UB
 
The MC14572UB hex functional gate is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity is desired. The chip contains four inverters, one NOR gate and one NAND gate.
Diode Protection on All Inputs
Single Supply Operation
Supply Voltage Range = 3.0 Vdc to 18 Vdc
NOR Input Pin Adjacent to VSS Pin to Simplify Use As An Inverter
NAND Input Pin Adjacent to VDD Pin to Simplify Use As An Inverter
NOR Output Pin Adjacent to Inverter Input Pin For OR Application
NAND Output Pin Adjacent to Inverter Input Pin For AND Application
Capable of Driving Two Low–power TTL Loads or One Low–Power
Schottky TTL Load over the Rated Temperature Range
MAXIMUM RATINGS* (Voltages Referenced to V
SS
)
Symbol
Parameter Value Unit
V
DD
DC Supply Voltage – 0.5 to + 18.0 V
Vin, V
out
Input or Output Voltage (DC or Transient) – 0.5 to VDD + 0.5 V
Iin, I
out
Input or Output Current (DC or Transient), per Pin
± 10 mA
P
D
Power Dissipation, per Package† 500 mW
T
stg
Storage Temperature – 65 to + 150
_
C
T
L
Lead Temperature (8–Second Soldering) 260
_
C
*Maximum Ratings are those values beyond which damage to the device may occur. †Temperature Derating:
Plastic “P and D/DW” Packages: – 7.0 mW/_C From 65_C To 125_C Ceramic “L” Packages: – 12 mW/_C From 100_C To 125_C
CIRCUIT SCHEMATIC
V
DD
V
DD
V
DD
2
7
6
1
5
14
15
13
V
SS
V
SS
V
SS

SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1995
REV 3 1/94

L SUFFIX
CERAMIC CASE 620
ORDERING INFORMATION
MC14XXXUBCP Plastic MC14XXXUBCL Ceramic MC14XXXUBD SOIC
TA = – 55° to 125°C for all packages.
P SUFFIX
PLASTIC
CASE 648
D SUFFIX
SOIC
CASE 751B
LOGIC DIAGRAM
15
14
12
10
7
6
4
2
13
11
9
5
3
1
VDD = PIN 16
VSS = PIN 8
Page 2
MOTOROLA CMOS LOGIC DATAMC14572UB
2
ELECTRICAL CHARACTERISTICS (Voltages Referenced to V
SS
)
V
DD
– 55_C 25_C 125_C
Characteristic
Symbol
DD
Vdc
Min Max Min Typ # Max Min Max
Unit
Output Voltage “0” Level
Vin = VDD or 0
V
OL
5.0 10 15
— — —
0.05
0.05
0.05
— — —
0 0 0
0.05
0.05
0.05
— — —
0.05
0.05
0.05
Vdc
Vin = 0 or V
DD
“1” Level V
OH
5.0 10 15
4.95
9.95
14.95
— — —
4.95
9.95
14.95
5.0 10 15
— — —
4.95
9.95
14.95
— — —
Vdc
Input Voltage “0” Level
(VO = 4.5 or 0.5 Vdc) (VO = 9.0 or 1.0 Vdc) (VO = 13.5 or 1.5 Vdc)
V
IL
5.0 10 15
— — —
1.0
2.0
2.5
— — —
2.25
4.50
6.75
1.0
2.0
2.5
— — —
1.0
2.0
2.5
Vdc
“1” Level (VO = 0.5 or 4.5 Vdc) (VO = 1.0 or 9.0 Vdc) (VO = 1.5 or 13.5 Vdc)
V
IH
5.0 10 15
4.0
8.0
12.5
— — —
4.0
8.0
12.5
2.75
5.50
8.25
— — —
4.0
8.0
12.5
— — —
Vdc
Output Drive Current
(VOH = 2.5 Vdc) Source (VOH = 4.6 Vdc) (VOH = 9.5 Vdc) (VOH = 13.5 Vdc)
I
OH
5.0
5.0 10 15
– 1.2 – 0.25 – 0.62
– 1.8
— — — —
– 1.0 – 0.2 – 0.5 – 1.5
– 1.7
– 0.36
– 0.9 – 3.5
— — — —
– 0.7 – 0.14 – 0.35
– 1.1
— — — —
mAdc
(VOL = 0.4 Vdc) Sink (VOL = 0.5 Vdc) (VOL = 1.5 Vdc)
I
OL
5.0 10 15
0.64
1.6
4.2
— — —
0.51
1.3
3.4
0.88
2.25
8.8
— — —
0.36
0.9
2.4
— — —
mAdc
Input Current I
in
15 ±0.1 ±0.00001 ±0.1 ±1.0 µAdc
Input Capacitance
(Vin = 0)
C
in
5.0 7.5 pF
Quiescent Current
(Per Package)
I
DD
5.0 10 15
— — —
0.25
0.5
1.0
— — —
0.0005
0.0010
0.0015
0.25
0.5
1.0
— — —
7.5 15 30
µAdc
Total Supply Current**†
(Dynamic plus Quiescent, Per Package) (CL = 50 pF on all outputs, all buffers switching)
I
T
5.0 10 15
IT = (1.89 µA/kHz) f + I
DD
IT = (3.80 µA/kHz) f + I
DD
IT = (5.68 µA/kHz) f + I
DD
µAdc
#Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance. **The formulas given are for the typical characteristics only at 25_C. †To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL – 50) Vfk
where: IT is in µA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.006.
This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high-impedance circuit. For proper operation, Vin and V
out
should be constrained to the range VSS (Vin or V
out
) VDD.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either VSS or VDD). Unused outputs must be left open.
PIN ASSIGNMENT
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
IN
E
OUT
F
IN 1
F
IN 2
F
V
DD
OUT
D
IN
D
OUT
E
IN
B
OUT
B
IN
A
OUT
A
V
SS
IN 2
C
IN 1
C
OUT
C
Page 3
MOTOROLA CMOS LOGIC DATA
3
MC14572UB
SWITCHING CHARACTERISTICS* (C
L
= 50 pF, TA = 25_C)
Characteristic
Symbol V
DD
Min Typ # Max Unit
Output Rise Time
t
TLH
= (3.0 ns/pF) CL + 30 ns
t
TLH
= (1.5 ns/pF) CL + 15 ns
t
TLH
= (1.1 ns/pF) CL + 10 ns
t
TLH
5.0 10 15
— — —
180
90 65
360 180 130
ns
Output Fall Time
t
THL
= (1.5 ns/pF) CL + 25 ns
t
THL
= (0.75 ns/pF) CL + 12.5 ns
t
THL
= (0.55 ns/pF) CL + 9.5 ns
t
THL
5.0 10 15
— — —
100
50 40
200 100
80
ns
Propagation Delay Time
t
PLH
, t
PHL
= (1.7 ns/pF) CL + 5 ns
t
PLH
, t
PHL
= (0.66 ns/pF) CL + 17 ns
t
PLH
, t
PHL
= (0.5 ns/pF) CL + 15 ns
t
PLH
,
t
PHL
5.0 10 15
— — —
90 50 40
180 100
80
ns
*The formulas given are for the typical characteristics only at 25_C. #Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.
Figure 1. Switching Time Test Circuits and Waveforms
PULSE
GENERATOR
PULSE
GENERATOR
INPUT
2
INPUT
15
V
DD
V
DD
16
16
8
8 V
SS
V
SS
C
L
C
L
1
13
OUTPUT
OUTPUT
PULSE
GENERATOR
INPUT
7
V
DD
16
5
OUTPUT
8 V
SS
C
L
6
20 ns 20 ns
V
DD
V
SS
V
OH
V
OL
t
r
t
f
90%
50%
10%
90%
50%
10%
90%
50%
10%
90%
10%
50%
INPUT
OUTPUT
t
PHL
t
PLH
14
Page 4
MOTOROLA CMOS LOGIC DATAMC14572UB
4
OUTLINE DIMENSIONS
P SUFFIX
PLASTIC DIP PACKAGE
CASE 648–08
ISSUE R
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD FLASH.
5. ROUNDED CORNERS OPTIONAL.
–A–
B
F
C
S
H
G
D
J
L
M
16 PL
SEATING
1 8
916
K
PLANE
–T–
M
A
M
0.25 (0.010) T
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.740 0.770 18.80 19.55 B 0.250 0.270 6.35 6.85 C 0.145 0.175 3.69 4.44 D 0.015 0.021 0.39 0.53 F 0.040 0.70 1.02 1.77 G 0.100 BSC 2.54 BSC H 0.050 BSC 1.27 BSC J 0.008 0.015 0.21 0.38 K 0.110 0.130 2.80 3.30 L 0.295 0.305 7.50 7.74 M 0 10 0 10 S 0.020 0.040 0.51 1.01
____
L SUFFIX
CERAMIC DIP PACKAGE
CASE 620–10
ISSUE V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL.
4. DIMENSION F MAY NARROW TO 0.76 (0.030) WHERE THE LEAD ENTERS THE CERAMIC BODY.
–A–
–B–
–T–
F
E
G
N
K
C
SEATING PLANE
16 PLD
S
A
M
0.25 (0.010) T
16 PLJ
S
B
M
0.25 (0.010) T
M
L
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.750 0.785 19.05 19.93 B 0.240 0.295 6.10 7.49 C ––– 0.200 ––– 5.08 D 0.015 0.020 0.39 0.50 E 0.050 BSC 1.27 BSC F 0.055 0.065 1.40 1.65 G 0.100 BSC 2.54 BSC H 0.008 0.015 0.21 0.38 K 0.125 0.170 3.18 4.31 L 0.300 BSC 7.62 BSC M 0 15 0 15 N 0.020 0.040 0.51 1.01
_ _ _ _
16 9
1 8
Page 5
MOTOROLA CMOS LOGIC DATA
5
MC14572UB
OUTLINE DIMENSIONS
D SUFFIX
PLASTIC SOIC PACKAGE
CASE 751B–05
ISSUE J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION.
1 8
16 9
SEATING
PLANE
F
J
M
R
X 45
_
G
8 PLP
–B–
–A–
M
0.25 (0.010) B
S
–T–
D
K
C
16 PL
S
B
M
0.25 (0.010) A
S
T
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A 9.80 10.00 0.386 0.393 B 3.80 4.00 0.150 0.157 C 1.35 1.75 0.054 0.068 D 0.35 0.49 0.014 0.019 F 0.40 1.25 0.016 0.049
G 1.27 BSC 0.050 BSC
J 0.19 0.25 0.008 0.009 K 0.10 0.25 0.004 0.009
M 0 7 0 7
P 5.80 6.20 0.229 0.244 R 0.25 0.50 0.010 0.019
_ _ _ _
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MC14572UB/D
*MC14572UB/D*
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