Datasheet MC14555BCP, MC14556BCL, MC14556BCP, MC14556BD, MC14555BD Datasheet (Motorola)

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Page 1
MOTOROLA CMOS LOGIC DATA
1
MC14555B MC14556B
    
The MC14555B and MC14556B are constructed with complementary MOS (CMOS) enhancement mode devices. Each Decoder/Demultiplexer has two select inputs (A and B), an active low Enable input (E), and four mutually exclusive outputs (Q0, Q1, Q2, Q3). The MC14555B has the selected output go to the “high” state, and the MC14556B has the selected output go to the “low” state. Expanded decoding such as binary–to–hexade­cimal ( 1–of–16), e tc., can be achieved by using other MC14555B or MC14556B devices.
Applications include code conversion, address decoding, memory selec­tion control, and demultiplexing (using the Enable input as a data input) in digital data transmission systems.
Diode Protection on All Inputs
Active High or Active Low Outputs
Expandable
Supply Voltage Range = 3.0 Vdc to 18 Vdc
All Outputs Buffered
Capable of Driving Two Low–Power TTL Loads or One Low–Power
Schottky TTL Load Over the Rated Temperature Range
MAXIMUM RATINGS* (Voltages Referenced to V
SS
)
Symbol
Parameter Value Unit
V
DD
DC Supply Voltage – 0.5 to + 18.0 V
Vin, V
out
Input or Output Voltage (DC or Transient) – 0.5 to VDD + 0.5 V
Iin, I
out
Input or Output Current (DC or Transient), per Pin
± 10 mA
P
D
Power Dissipation, per Package† 500 mW
T
stg
Storage Temperature – 65 to + 150
_
C
T
L
Lead Temperature (8–Second Soldering) 260
_
C
*Maximum Ratings are those values beyond which damage to the device may occur. †Temperature Derating:
“P and D/DW” Packages: – 7.0 mW/C From 65_C To 125_C Ceramic “L” Packages: – 12 mW/_C From 100_C To 125_C
BLOCK DIAGRAM
2
4
MC14555B MC14556B
3 1
14 13 15
5 6 7
12 11 10 9
2
4
3 1
14 13 15
5 6 7
12 11 10 9
VDD = PIN 16
VSS = PIN 8
A B E
Q0 Q1 Q2 Q3
A B E
Q
0
Q
1
Q
2
Q
3
A B E
Q0 Q1 Q2 Q3
A B E
Q
0
Q
1
Q
2
Q3

SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1995
REV 3 1/94
 
L SUFFIX
CERAMIC
CASE 620
ORDERING INFORMATION
MC14XXXBCP Plastic MC14XXXBCL Ceramic MC14XXXBD SOIC
TA = – 55° to 125°C for all packages.
P SUFFIX
PLASTIC
CASE 648
D SUFFIX
SOIC
CASE 751B
This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, pre­cautions must be taken to avoid applications of any voltage higher than maximum rated volt­ages to this high–impedance circuit. For proper operation, Vin and V
out
should be constrained
to the range VSS v (Vin or V
out
) v VDD.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either V
SS
or VDD). Unused outputs must be left open.
TRUTH TABLE
Inputs Outputs
Enable Select MC14555B MC14556B
E
B A Q3 Q2 Q1 Q0 Q3 Q2 Q1 Q0
0 0 0 0 0 0 1 1 1 1 0 0 0 1 0 0 1 0 1 1 0 1 0 1 0 0 1 0 0 1 0 1 1 0 1 1 1 0 0 0 0 1 1 1
1 X X 0 0 0 0 1 1 1 1
X = Don’t Care
Page 2
MOTOROLA CMOS LOGIC DATAMC14555B MC14556B
2
ELECTRICAL CHARACTERISTICS (Voltages Referenced to V
SS
)
V
– 55_C 25_C 125_C
Characteristic
Symbol
V
DD
Vdc
Min Max Min Typ # Max Min Max
Unit
Output Voltage “0” Level
Vin = VDD or 0
V
OL
5.0 10 15
— — —
0.05
0.05
0.05
— — —
0 0 0
0.05
0.05
0.05
— — —
0.05
0.05
0.05
Vdc
“1” Level
Vin = 0 or V
DD
V
OH
5.0 10 15
4.95
9.95
14.95
— — —
4.95
9.95
14.95
5.0 10 15
— — —
4.95
9.95
14.95
— — —
Vdc
Input Voltage “0” Level
(VO = 4.5 or 0.5 Vdc) (VO = 9.0 or 1.0 Vdc) (VO = 13.5 or 1.5 Vdc)
V
IL
5.0 10 15
— — —
1.5
3.0
4.0
— — —
2.25
4.50
6.75
1.5
3.0
4.0
— — —
1.5
3.0
4.0
Vdc
“1” Level (VO = 0.5 or 4.5 Vdc) (VO = 1.0 or 9.0 Vdc) (VO = 1.5 or 13.5 Vdc)
V
IH
5.0 10 15
3.5
7.0 11
— — —
3.5
7.0 11
2.75
5.50
8.25
— — —
3.5
7.0 11
— — —
Vdc
Output Drive Current
(VOH = 2.5 Vdc) Source (VOH = 4.6 Vdc) (VOH = 9.5 Vdc) (VOH = 13.5 Vdc)
I
OH
5.0
5.0 10 15
– 3.0
– 0.64
– 1.6 – 4.2
— — — —
– 2.4
– 0.51
– 1.3 – 3.4
– 4.2
– 0.88
– 2.25
– 8.8
— — — —
– 1.7
– 0.36
– 0.9 – 2.4
— — — —
mAdc
(VOL = 0.4 Vdc) Sink (VOL = 0.5 Vdc) (VOL = 1.5 Vdc)
I
OL
5.0 10 15
0.64
1.6
4.2
— — —
0.51
1.3
3.4
0.88
2.25
8.8
— — —
0.36
0.9
2.4
— — —
mAdc
Input Current I
in
15 ±0.1 ±0.00001 ±0.1 ±1.0 µAdc
Input Capacitance
(Vin = 0)
C
in
5.0 7.5 pF
Quiescent Current
(Per Package)
I
DD
5.0 10 15
— — —
5.0 10 20
— — —
0.005
0.010
0.015
5.0 10 20
— — —
150 300 600
µAdc
Total Supply Current**†
(Dynamic plus Quiescent, Per Package) (CL = 50 pF on all outputs, all buffers switching)
I
T
5.0 10 15
IT = (0.85 µA/kHz) f + I
DD
IT = (1.70 µA/kHz) f + I
DD
IT = (2.60 µA/kHz) f + I
DD
µAdc
#Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance. **The formulas given are for the typical characteristics only at 25_C. †To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL – 50) Vfk
where: IT is in µA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.002.
PIN ASSIGNMENTS
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
Q0
B
B
B
A
B
E
B
V
DD
Q3
B
Q2
B
Q1
B
Q0
A
B
A
A
A
E
A
V
SS
Q3
A
Q2
A
Q1
A
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
Q
0
B
B
B
A
B
E
B
V
DD
Q
3
B
Q
2
B
Q
1
B
Q
0
A
B
A
A
A
E
A
V
SS
Q
3
A
Q
2
A
Q
1
A
MC14555B MC14556B
Page 3
MOTOROLA CMOS LOGIC DATA
3
MC14555B MC14556B
SWITCHING CHARACTERISTICS* (C
L
= 50 pF, TA = 25_C)
Characteristic
Symbol V
DD
Min Typ # Max Unit
Output Rise and Fall Time
t
TLH
, t
THL
= (1.5 ns/pF) CL + 25 ns
t
TLH
, t
THL
= (0.75 ns/pF) CL + 12.5 ns
t
TLH
, t
THL
= (0.55 ns/pF) CL + 9.5 ns
t
TLH
,
t
THL
5.0 10 15
— — —
100
50 40
200 100
80
ns
Propagation Delay Time — A, B to Output
t
PLH
, t
PHL
= (1.7 ns/pF) CL + 135 ns
t
PLH
, t
PHL
= (0.66 ns/pF) CL + 62 ns
t
PLH
, t
PHL
= (0.5 ns/pF) CL + 45 ns
t
PLH
,
t
PHL
5.0 10 15
— — —
220
95 70
440 190 140
ns
Propagation Delay Time — E to Output
t
PLH
, t
PHL
= (1.7 ns/pF) CL + 115 ns
t
PLH
, t
PHL
= (0.66 ns/pF) CL + 52 ns
t
PLH
, t
PHL
= (0.5 ns/pF) CL + 40 ns
t
PLH
,
t
PHL
5.0 10 15
— — —
200
85 65
400 170 130
ns
*The formulas given are for the typical characteristics only at 25_C. #Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.
Figure 1. Dynamic Power Dissipation Signal Waveforms Figure 2. Dynamic Signal Waveforms
All 8 outputs connect to respective CL loads. f in respect to a system clock.
INPUT E LOW
20 ns 20 ns
90%
50%
10%
2f
1
V
DD
V
SS
V
DD
V
SS
V
OH
V
OL
A INPUTS
(50% DUTY CYCLE)
B INPUTS
(50% DUTY CYCLE)
OUTPUT Q1
20 ns 20 ns
V
DD
V
SS
V
OH
V
OL
V
OH
V
OL
90% 50% 10%
90% 50% 10%
90% 50% 10%
t
PLH
t
TLH
t
PHL
t
PHL
t
THL
t
PLH
t
TLH
t
THL
INPUT A HIGH, INPUT E
LOW
INPUT B
OUTPUT Q3
MC14556B
OUTPUT Q3
MC14555B
LOGIC DIAGRAM
(1/2 of Dual)
*Eliminated for MC14555B
*
*
*
*
Q0
Q1
Q2
Q3
E
B
A
Page 4
MOTOROLA CMOS LOGIC DATAMC14555B MC14556B
4
OUTLINE DIMENSIONS
P SUFFIX
PLASTIC DIP PACKAGE
CASE 648–08
ISSUE R
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD FLASH.
5. ROUNDED CORNERS OPTIONAL.
–A–
B
F
C
S
H
G
D
J
L
M
16 PL
SEATING
1 8
916
K
PLANE
–T–
M
A
M
0.25 (0.010) T
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.740 0.770 18.80 19.55 B 0.250 0.270 6.35 6.85 C 0.145 0.175 3.69 4.44 D 0.015 0.021 0.39 0.53 F 0.040 0.70 1.02 1.77 G 0.100 BSC 2.54 BSC H 0.050 BSC 1.27 BSC J 0.008 0.015 0.21 0.38 K 0.110 0.130 2.80 3.30 L 0.295 0.305 7.50 7.74 M 0 10 0 10 S 0.020 0.040 0.51 1.01
____
L SUFFIX
CERAMIC DIP PACKAGE
CASE 620–10
ISSUE V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL.
4. DIMENSION F MAY NARROW TO 0.76 (0.030) WHERE THE LEAD ENTERS THE CERAMIC BODY.
–A–
–B–
–T–
F
E
G
N
K
C
SEATING PLANE
16 PLD
S
A
M
0.25 (0.010) T
16 PLJ
S
B
M
0.25 (0.010) T
M
L
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.750 0.785 19.05 19.93 B 0.240 0.295 6.10 7.49 C ––– 0.200 ––– 5.08 D 0.015 0.020 0.39 0.50 E 0.050 BSC 1.27 BSC F 0.055 0.065 1.40 1.65 G 0.100 BSC 2.54 BSC H 0.008 0.015 0.21 0.38 K 0.125 0.170 3.18 4.31 L 0.300 BSC 7.62 BSC M 0 15 0 15 N 0.020 0.040 0.51 1.01
_ _ _ _
16 9
1 8
Page 5
MOTOROLA CMOS LOGIC DATA
5
MC14555B MC14556B
OUTLINE DIMENSIONS
D SUFFIX
PLASTIC SOIC PACKAGE
CASE 751B–05
ISSUE J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION.
1 8
16 9
SEATING
PLANE
F
J
M
R
X 45
_
G
8 PLP
–B–
–A–
M
0.25 (0.010) B
S
–T–
D
K
C
16 PL
S
B
M
0.25 (0.010) A
S
T
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A 9.80 10.00 0.386 0.393 B 3.80 4.00 0.150 0.157 C 1.35 1.75 0.054 0.068 D 0.35 0.49 0.014 0.019
F 0.40 1.25 0.016 0.049
G 1.27 BSC 0.050 BSC
J 0.19 0.25 0.008 0.009 K 0.10 0.25 0.004 0.009 M 0 7 0 7
P 5.80 6.20 0.229 0.244 R 0.25 0.50 0.010 0.019
_ _ _ _
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MC14555B/D
*MC14555B/D*
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