Datasheet MC14539BCL, MC14539BCP, MC14539BD Datasheet (Motorola)

Page 1
MOTOROLA CMOS LOGIC DATA
1
MC14539B
   
The MC14539B data selector/multiplexer is constructed with MOS P–channel a nd N –channel e nhancement m ode devices i n a single monolithic structure. The circuit consists of two sections of four inputs each. One input from each section is selected by the address inputs A and B. A “high” on the Strobe input will cause the output to remain “low”.
This device finds primary application in signal multiplexing functions. It permits multiplexing from N–lines to I–line, and can also perform parallel–to– serial conversion. The Strobe input allows cascading of n–lines to n–lines.
Supply Voltage Range = 3.0 Vdc to 18 Vdc
Capable of Driving Two Low–Power TTL Loads or One Low–Power
Schottky TTL Load Over the Rated Temperature Range
MAXIMUM RATINGS* (Voltages Referenced to V
SS
)
Symbol
Parameter
Value
Unit
V
DD
DC Supply Voltage
– 0.5 to + 18.0
V
Vin, V
out
Input or Output Voltage (DC or Transient)
– 0.5 to VDD + 0.5
V
Iin, I
out
Input or Output Current (DC or Transient), per Pin
± 10
mA
P
D
Power Dissipation, per Package†
500
mW
T
stg
Storage Temperature
– 65 to + 150
_
C
T
L
Lead Temperature (8–Second Soldering)
260
_
C
*Maximum Ratings are those values beyond which damage to the device may occur. †Temperature Derating:
Plastic “P and D/DW” Packages: – 7.0 mW/_C From 65_C To 125_C Ceramic “L” Packages: – 12 mW/_C From 100_C To 125_C
TRUTH TABLE
Address
Inputs
Data Inputs
B A
X3 Y3
X2Y2X1
Y1
X0 Y0
ST, ST
Outputs
Z, W
X X X X X X 1 0
0 0 X X X 0 0 0 0 0 X X X 1 0 1 0 1 X X 0 X 0 0 0 1 X X 1 X 0 1
1 0 X 0 X X 0 0 1 0 X 1 X X 0 1 1 1 0 X X X 0 0 1 1 1 X X X 0 1
X = Don’t Care

SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1995
REV 3 1/94

L SUFFIX
CERAMIC CASE 620
ORDERING INFORMATION
MC14XXXBCP Plastic MC14XXXBCL Ceramic MC14XXXBD SOIC
TA = – 55° to 125°C for all packages.
P SUFFIX
PLASTIC
CASE 648
D SUFFIX
SOIC
CASE 751B
BLOCK DIAGRAM
14
2 1 6 5 4 3
15 10 11 12 13
9
7
Z
W
A B
ST X0
X1 X2 X3
A B ST
Y0 Y1 Y2 Y3
VDD = PIN 16
VSS = PIN 8
Page 2
MOTOROLA CMOS LOGIC DATAMC14539B
2
ELECTRICAL CHARACTERISTICS (Voltages Referenced to V
SS
)
V
DD
– 55_C 25_C 125_C
Characteristic
Symbol
DD
Vdc
Min Max Min Typ # Max Min Max
Unit
Output Voltage “0” Level
Vin = VDD or 0
V
OL
5.0 10 15
— — —
0.05
0.05
0.05
— — —
0 0 0
0.05
0.05
0.05
— — —
0.05
0.05
0.05
Vdc
“1” Level
Vin = 0 or V
DD
V
OH
5.0 10 15
4.95
9.95
14.95
— — —
4.95
9.95
14.95
5.0 10 15
— — —
4.95
9.95
14.95
— — —
Vdc
Input Voltage “0” Level
(VO = 4.5 or 0.5 Vdc) (VO = 9.0 or 1.0 Vdc) (VO = 13.5 or 1.5 Vdc)
V
IL
5.0 10 15
— — —
1.5
3.0
4.0
— — —
2.25
4.50
6.75
1.5
3.0
4.0
— — —
1.5
3.0
4.0
Vdc
“1” Level (VO = 0.5 or 4.5 Vdc) (VO = 1.0 or 9.0 Vdc) (VO = 1.5 or 13.5 Vdc)
V
IH
5.0 10 15
3.5
7.0 11
— — —
3.5
7.0 11
2.75
5.50
8.25
— — —
3.5
7.0 11
— — —
Vdc
Output Drive Current
(VOH = 2.5 Vdc) Source (VOH = 4.6 Vdc) (VOH = 9.5 Vdc) (VOH = 13.5 Vdc)
I
OH
5.0
5.0 10 15
– 3.0
– 0.64
– 1.6 – 4.2
— — — —
– 2.4
– 0.51
– 1.3 – 3.4
– 4.2
– 0.88
– 2.25
– 8.8
— — — —
– 1.7
– 0.36
– 0.9 – 2.4
— — — —
mAdc
(VOL = 0.4 Vdc) Sink (VOL = 0.5 Vdc) (VOL = 1.5 Vdc)
I
OL
5.0 10 15
0.64
1.6
4.2
— — —
0.51
1.3
3.4
0.88
2.25
8.8
— — —
0.36
0.9
2.4
— — —
mAdc
Input Current I
in
15 ±0.1 ±0.00001 ±0.1 ±1.0 µAdc
Input Capacitance
(Vin = 0)
C
in
5.0 7.5 pF
Quiescent Current
(Per Package)
I
DD
5.0 10 15
— — —
5.0 10 20
— — —
0.005
0.010
0.015
5.0 10 20
— — —
150 300 600
µAdc
Total Supply Current**†
(Dynamic plus Quiescent, Per Package) (CL = 50 pF on all outputs, all buffers switching)
I
T
5.0 10 15
IT = (0.85 µA/kHz) f + I
DD
IT = (1.70 µA/kHz) f + I
DD
IT = (2.60 µA/kHz) f + I
DD
µAdc
#Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance. **The formulas given are for the typical characteristics only at 25_C. †To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL – 50) Vfk
where: IT is in µA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.002.
This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high-impedance circuit. For proper operation, Vin and V
out
should be constrained to the range VSS (Vin or V
out
) VDD.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either VSS or VDD). Unused outputs must be left open.
Page 3
MOTOROLA CMOS LOGIC DATA
3
MC14539B
SWITCHING CHARACTERISTICS* (C
L
= 50 pF, TA = 25_C)
Characteristic
Symbol V
DD
Min Typ # Max Unit
Output Rise and Fall Time
t
TLH
, t
THL
= (1.5 ns/pF) CL + 25 ns
t
TLH
, t
THL
= (0.75 ns/pF) CL + 12.5 ns
t
TLH
, t
THL
= (0.55 ns/pF) CL + 9.5 ns
t
TLH
,
t
THL
5.0 10 15
— — —
100
50 40
200 100
80
ns
Propagation Delay Time
X, Y Input to Output
t
PLH
, t
PHL
= (1.7 ns/pF) CL + 125 ns
t
PLH
, t
PHL
= (0.66 ns/pF) CL + 57 ns
t
PLH
, t
PHL
= (0.55 ns/pF) CL + 45 ns
t
PLH
,
t
PHL
5.0 10 15
— — —
210
90 70
420 180 140
ns
A Input to Output
t
PLH
= (1.7 ns/pF) CL + 140 ns
t
PLH
= (0.66 ns/pF) CL + 77 ns
t
PLH
= (0.5 ns/pF) CL + 60 ns
t
PLH
5.0 10 15
— — —
225
110
85
450 220 170
ns
t
PHL
= (1.7 ns/pF) CL + 160 ns
t
PHL
= (0.66 ns/pF) CL + 82 ns
t
PHL
= (0.5 ns/pF) CL + 65 ns
t
PHL
5.0 10 15
— — —
245
115
90
490 230 180
ns
Strobe Input to Output
t
PLH
, t
PHL
= (1.7 ns/pF) CL + 60 ns
t
PLH
, t
PHL
= (0.66 ns/pF) CL + 42 ns
t
PLH
, t
PHL
= (0.5 ns/pF) CL + 35 ns
t
PLH
,
t
PHL
5.0 10 15
— — —
145
75 60
290 150 120
ns
*The formulas given are for the typical characteristics only at 25_C. #Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.
PULSE
GENERATOR
V
DD
C
L
V
SS
A B ST X0 X1 X2 X3 ST
Y0 Y1 Y2 Y3
W
Z
20 ns 20 ns
INPUT
t
THL
t
PHL
t
TLH
t
PLH
t
THL
t
TLH
t
PLH
t
PHL
OUTPUT (TEST 1)
OUTPUT
(TESTS 2 AND 3)
INPUT CONNECTIONS FOR t
TLH
, t
THL
, t
PHL
, t
PLH
Test Strobe A X0
1 Gnd Gnd P.G. 2 P.G. Gnd V
DD
3 Gnd P.G. V
DD
Figure 1. AC Test Circuit and Waveforms
Page 4
MOTOROLA CMOS LOGIC DATAMC14539B
4
Figure 2. Power Dissipation Test Circuit and Waveform
PULSE
GENERATOR
V
DD
V
SS
A B
ST X0 X1 X2 X3 ST
Y0 Y1 Y2 Y3
W
Z
20 ns
20 ns
V
in
V
DD
C
L
C
L
0.01
µ
F
CERAMIC
500
µ
F
V
SS
90%
50%
10%
50% DUTY CYCLE
I
D
PIN ASSIGNMENT
LOGIC DIAGRAM
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
Y2
Y3
A
ST
V
DD
W
Y0
Y1
X2
X3
B
ST
V
SS
Z
X0
X1
B A
X0
X1
X2
X3
Y0
Y1
Y2
Y3
2
14
6
5
4
3
10
11
12
13
ST
1
Z
7
9
W
15
ST
Page 5
MOTOROLA CMOS LOGIC DATA
5
MC14539B
OUTLINE DIMENSIONS
P SUFFIX
PLASTIC DIP PACKAGE
CASE 648–08
ISSUE R
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD FLASH.
5. ROUNDED CORNERS OPTIONAL.
–A–
B
F
C
S
H
G
D
J
L
M
16 PL
SEATING
1 8
916
K
PLANE
–T–
M
A
M
0.25 (0.010) T
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.740 0.770 18.80 19.55 B 0.250 0.270 6.35 6.85 C 0.145 0.175 3.69 4.44 D 0.015 0.021 0.39 0.53 F 0.040 0.70 1.02 1.77 G 0.100 BSC 2.54 BSC H 0.050 BSC 1.27 BSC J 0.008 0.015 0.21 0.38 K 0.110 0.130 2.80 3.30 L 0.295 0.305 7.50 7.74 M 0 10 0 10 S 0.020 0.040 0.51 1.01
____
L SUFFIX
CERAMIC DIP PACKAGE
CASE 620–10
ISSUE V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL.
4. DIMENSION F MAY NARROW TO 0.76 (0.030) WHERE THE LEAD ENTERS THE CERAMIC BODY.
–A–
–B–
–T–
F
E
G
N
K
C
SEATING PLANE
16 PLD
S
A
M
0.25 (0.010) T
16 PLJ
S
B
M
0.25 (0.010) T
M
L
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.750 0.785 19.05 19.93 B 0.240 0.295 6.10 7.49 C ––– 0.200 ––– 5.08 D 0.015 0.020 0.39 0.50 E 0.050 BSC 1.27 BSC F 0.055 0.065 1.40 1.65 G 0.100 BSC 2.54 BSC H 0.008 0.015 0.21 0.38 K 0.125 0.170 3.18 4.31 L 0.300 BSC 7.62 BSC M 0 15 0 15 N 0.020 0.040 0.51 1.01
_ _ _ _
16 9
1 8
Page 6
MOTOROLA CMOS LOGIC DATAMC14539B
6
OUTLINE DIMENSIONS
D SUFFIX
PLASTIC SOIC PACKAGE
CASE 751B–05
ISSUE J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION.
1 8
16 9
SEATING
PLANE
F
J
M
R
X 45
_
G
8 PLP
–B–
–A–
M
0.25 (0.010) B
S
–T–
D
K
C
16 PL
S
B
M
0.25 (0.010) A
S
T
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A 9.80 10.00 0.386 0.393 B 3.80 4.00 0.150 0.157 C 1.35 1.75 0.054 0.068 D 0.35 0.49 0.014 0.019 F 0.40 1.25 0.016 0.049 G 1.27 BSC 0.050 BSC J 0.19 0.25 0.008 0.009 K 0.10 0.25 0.004 0.009 M 0 7 0 7 P 5.80 6.20 0.229 0.244 R 0.25 0.50 0.010 0.019
_ _ _ _
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MC14539B/D
*MC14539B/D*
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