Datasheet MC14519BCL, MC14519BCP, MC14519BD Datasheet (Motorola)

Page 1
MOTOROLA CMOS LOGIC DATA
1
MC14519B
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The MC14519B is constructed with MOS P–channel and N–channel enhancement mode devices in a monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity is desired.
This device provides three functions in one package; a 4–Bit AND/OR Selector, a Quad 2–Channel Data Selector, or a Quad Exclusive NOR Gate.
Diode Protection on All Inputs
Supply Voltage Range = 3.0 Vdc to 18 Vdc
Capable of Driving Two Low–power TTL Loads or One Low–power
Schottky TTL Load Over the Rated Temperature Range
Plug–in Replacement for CD4019 in Most Applications
LOGIC DIAGRAM
CONTROL
INPUTS
DATA
INPUTS
A
B
X0 Y0
X1 Y1
X2
Y2
X3
Y3
9
14
6 7
4 5
2
3
15
1
10 Z0
11 Z1
12 Z2
13 Z3
VDD = PIN 16
VSS = PIN 8

SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1995
REV 3 1/94

L SUFFIX
CERAMIC CASE 620
ORDERING INFORMATION
TA = – 55° to 125°C for all packages.
P SUFFIX
PLASTIC
CASE 648
D SUFFIX
SOIC
CASE 751B
MC14XXXBCP Plastic MC14XXXBCL Ceramic MC14XXXBD SOIC
TRUTH TABLE
Control Inputs
Output
A B Z
n
0 0 0 0 1 Y
n
1 0 X
n
1 1 xn ĥ Y
n
NOTE: Xn ĥ Yn means X
n
(Exclusive–NOR) Y
n
Page 2
MOTOROLA CMOS LOGIC DATAMC14519B
2
MAXIMUM RATINGS* (Voltages Referenced to V
SS
)
Symbol
Parameter Value Unit
V
DD
DC Supply Voltage – 0.5 to + 18.0 V
Vin, V
out
Input or Output Voltage (DC or Transient) – 0.5 to VDD + 0.5 V
Iin, I
out
Input or Output Current (DC or Transient), per Pin
± 10 mA
P
D
Power Dissipation, per Package† 500 mW
T
stg
Storage Temperature – 65 to + 150
_
C
T
L
Lead Temperature (8–Second Soldering) 260
_
C
*Maximum Ratings are those values beyond which damage to the device may occur. †Temperature Derating:
Plastic “P and D/DW” Packages: – 7.0 mW/_C From 65_C To 125_C Ceramic “L” Packages: – 12 mW/_C From 100_C To 125_C
ELECTRICAL CHARACTERISTICS (Voltages Referenced to V
SS
)
V
– 55_C 25_C 125_C
Characteristic
Symbol
V
DD
Vdc
Min Max Min Typ # Max Min Max
Unit
“0” Level
Vin = VDD or 0
V
OL
5.0 10 15
— — —
0.05
0.05
0.05
— — —
0 0 0
0.05
0.05
0.05
— — —
0.05
0.05
0.05
Vdc
“1” Level
Vin = 0 or V
DD
V
OH
5.0 10 15
4.95
9.95
14.95
— — —
4.95
9.95
14.95
5.0 10 15
— — —
4.95
9.95
14.95
— — —
Vdc
“0” Level (VO = 4.5 or 0.5 Vdc) (VO = 9.0 or 1.0 Vdc) (VO = 13.5 or 1.5 Vdc)
V
IL
5.0 10 15
— — —
1.5
3.0
4.0
— — —
2.25
4.50
6.75
1.5
3.0
4.0
— — —
1.5
3.0
4.0
Vdc
“1” Level (VO = 0.5 or 4.5 Vdc) (VO = 1.0 or 9.0 Vdc) (VO = 1.5 or 13.5 Vdc)
V
IH
5.0 10 15
3.5
7.0 11
— — —
3.5
7.0 11
2.75
5.50
8.25
— — —
3.5
7.0 11
— — —
Vdc
I
OH
5.0
5.0 10 15
– 3.0
– 0.64
– 1.6 – 4.2
— — — —
– 2.4
– 0.51
– 1.3 – 3.4
– 4.2 – 0.88 – 2.25
– 8.8
— — — —
– 1.7
– 0.36
– 0.9 – 2.4
— — — —
mAdc
I
OL
5.0 10 15
0.64
1.6
4.2
— — —
0.51
1.3
3.4
0.88
2.25
8.8
— — —
0.36
0.9
2.4
— — —
mAdc
Input Current I
in
15 ± 0.1 ±0.00001 ± 0.1 ± 1.0 µAdc
Input Capacitance
(Vin = 0)
C
in
5.0 7.5 pF
Quiescent Current
(Per Package)
I
DD
5.0 10 15
— — —
5.0 10 20
— — —
0.005
0.010
0.015
5.0 10 20
— — —
150 300 600
µAdc
Total Supply Current**†
(Dynamic plus Quiescent, Per Package) (CL = 50 pF on all outputs, all buffers switching)
I
T
5.0 10 15
IT = (1.2 µA/kHz) f + I
DD
IT = (2.4 µA/kHz) f + I
DD
IT = (3.6 µA/kHz) f + I
DD
µAdc
#Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance. **The formulas given are for the typical characteristics only at 25_C. †To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL – 50) Vfk
where: IT is in µA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.004.
PIN ASSIGNMENT
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
Z2
Z3
B
X3
V
DD
A
Z0
Z1
X1
Y2
X2
Y3
V
SS
Y0
X0
Y1
Output Voltage
Input Voltage
Output Drive Current
(VOH = 2.5 Vdc) Source (VOH = 4.6 Vdc) (VOH = 9.5 Vdc) (VOH = 13.5 Vdc)
(VOL = 0.4 Vdc) Sink (VOL = 0.5 Vdc) (VOL = 1.5 Vdc)
Page 3
MOTOROLA CMOS LOGIC DATA
3
MC14519B
SWITCHING CHARACTERISTICS* (C
L
= 50 pF, TA = 25_C)
Characteristic
Symbol V
DD
Min Typ # Max Unit
Output Rise and Fall Time
t
TLH
, t
THL
= (1.5 ns/pF) CL + 25 ns
t
TLH
, t
THL
= (0.75 ns/pF) CL + 12.5 ns
t
TLH
, t
THL
= (0.55 ns/pF) CL + 9.5 ns
t
TLH
,
t
THL
5.0 10 15
— — —
100
50 40
200 100
80
ns
Propagation Delay Time
t
PLH
, t
PHL
= (1.7 ns/pF) CL + 165 ns
t
PLH
, t
PHL
= (0.66 ns/pF) CL + 82
t
PLH
, t
PHL
= (0.5 ns/pF) CL + 65 ns
t
PLH
,
t
PHL
5.0 10 15
— — —
250 115
90
500 225 165
ns
*The formulas given are for the typical characteristics only at 25_C. #Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.
Figure 1. Dynamic Power Dissipation Test Circuit and Waveform
+V
DD
Z0
Z1
Z2
Z3
A B X0 Y0 X1 Y1 X2 Y2 X3
Y3
C
L
C
L
C
L
C
L
V
DD
V
SS
I
SS
V
in
500
µ
F
PULSE
GENERATOR
20 ns 20 ns
V
DD
V
SS
90%
10%
V
in
50% DUTY CYCLE
Figure 2. Switching Time Test Circuit and Waveforms
V
DD
V
DD
V
SS
Z0
Z1
Z2
Z3
A B X0 Y0 X1 Y1 X2
X3 Y3
Y2
C
L
C
L
C
L
C
L
OUTPUTS
20 ns
20 ns
V
DD
V
SS
V
OH
V
OL
V
OH
V
OL
OUTPUT
OUTPUT
INPUT
90%
50%
10%
50%
90%
10%
50%
t
PHL
t
PHL
t
PLH
t
PLH
t
THL
t
TLH
PULSE
GENERATOR
Page 4
MOTOROLA CMOS LOGIC DATAMC14519B
4
TYPICAL CIRCUIT APPLICATIONS
DATA REGISTER SELECTION COMPARISON
DATA A
CLOCK A
RESET A
DATA B CLOCK B RESET B
4–BIT REGISTER A Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4
4–BIT REGISTER B
DUAL 4–BIT REGISTER
MC14015B
CONTROL A CONTROL B
A
B
X0 X1 X2 X3 Y0 Y1 Y2 Y3
INVERT
Z0 Z1 Z2 Z3
MC14519B
AND/OR SELECT/EXCL NOR
Q0 Q1 Q2 Q3
MC14070B QUAD EXCLUSIVE OR
CONVERSION TABLE
Operation Code Output
A B INV Q0 Q1 Q2 Q3
Function
0 0 0 0 0 0 0 Inhibit, all zeros 0 0 1 1 1 1 1 Inhibit, all ones 1 0 0 X0 X1 X2 X3 Control A 1 0 1 X0 X1 X2 X3 Control A and Invert
0 1 0 Y0 Y1 Y2 Y3 Control B 0 1 1 Y0 Y1 Y2 Y3 Control B and Invert 1 1 0 X0 ĥ Y0 X1 ĥ Y1 X2 ĥ Y2 X3 ĥ Y3 Exclusive NOR 1 1 1 X0 ę Y0 X1 ę Y1 X2 ę Y2 X3 ę Y3 Exclusive OR
This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high-impedance circuit. For proper operation, Vin and V
out
should be constrained to the range VSS (Vin or V
out
) VDD.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either VSS or VDD). Unused outputs must be left open.
Page 5
MOTOROLA CMOS LOGIC DATA
5
MC14519B
OUTLINE DIMENSIONS
P SUFFIX
PLASTIC DIP PACKAGE
CASE 648–08
ISSUE R
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD FLASH.
5. ROUNDED CORNERS OPTIONAL.
–A–
B
F
C
S
H
G
D
J
L
M
16 PL
SEATING
1 8
916
K
PLANE
–T–
M
A
M
0.25 (0.010) T
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.740 0.770 18.80 19.55 B 0.250 0.270 6.35 6.85 C 0.145 0.175 3.69 4.44 D 0.015 0.021 0.39 0.53 F 0.040 0.70 1.02 1.77
G 0.100 BSC 2.54 BSC
H 0.050 BSC 1.27 BSC J 0.008 0.015 0.21 0.38 K 0.110 0.130 2.80 3.30 L 0.295 0.305 7.50 7.74
M 0 10 0 10
S 0.020 0.040 0.51 1.01
____
L SUFFIX
CERAMIC DIP PACKAGE
CASE 620–10
ISSUE V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL.
4. DIMENSION F MAY NARROW TO 0.76 (0.030) WHERE THE LEAD ENTERS THE CERAMIC BODY.
–A–
–B–
–T–
F
E
G
N
K
C
SEATING PLANE
16 PLD
S
A
M
0.25 (0.010) T
16 PLJ
S
B
M
0.25 (0.010) T
M
L
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.750 0.785 19.05 19.93 B 0.240 0.295 6.10 7.49 C ––– 0.200 ––– 5.08 D 0.015 0.020 0.39 0.50 E 0.050 BSC 1.27 BSC F 0.055 0.065 1.40 1.65 G 0.100 BSC 2.54 BSC H 0.008 0.015 0.21 0.38 K 0.125 0.170 3.18 4.31 L 0.300 BSC 7.62 BSC M 0 15 0 15 N 0.020 0.040 0.51 1.01
_ _ _ _
16 9
1 8
Page 6
MOTOROLA CMOS LOGIC DATAMC14519B
6
OUTLINE DIMENSIONS
D SUFFIX
PLASTIC SOIC PACKAGE
CASE 751B–05
ISSUE J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION.
1 8
16 9
SEATING
PLANE
F
J
M
R
X 45
_
G
8 PLP
–B–
–A–
M
0.25 (0.010) B
S
–T–
D
K
C
16 PL
S
B
M
0.25 (0.010) A
S
T
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A 9.80 10.00 0.386 0.393 B 3.80 4.00 0.150 0.157 C 1.35 1.75 0.054 0.068 D 0.35 0.49 0.014 0.019 F 0.40 1.25 0.016 0.049 G 1.27 BSC 0.050 BSC J 0.19 0.25 0.008 0.009 K 0.10 0.25 0.004 0.009
M 0 7 0 7
P 5.80 6.20 0.229 0.244 R 0.25 0.50 0.010 0.019
_ _ _ _
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MC14519B/D
*MC14519B/D*
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