Datasheet MC145200EVK, MC145201EVK, MC145191EVK, MC145190EVK Datasheet (Motorola)

Page 1

SEMICONDUCTOR TECHNICAL DATA
3–1
REV 1
Motorola, Inc. 1995
10/95
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High–Performance Silicon–Gate CMOS
The MC74HCT541A is identical in pinout to the LS541. This device may be used as a level converter for interfacing TTL or NMOS outputs to high speed CMOS inputs.
The HCT541A is an octal non–inverting buffer/line driver/line receiver designed to be used with 3–state memory address drivers, clock drivers, and other bus–oriented systems. This device features inputs and outputs on opposite sides of the package and two ANDed active–low output enables.
Output Drive Capability: 15 LSTTL Loads
TTL/NMOS–Compatible Input Levels
Outputs Directly Interface to CMOS, NMOS and TTL
Operating Voltage Range: 4.5 to 5.5V
Low Input Current: 1µA
In Compliance With the JEDEC Standard No. 7A Requirements
Chip Complexity: 134 FETs or 33.5 Equivalent Gates
18
Y1
2
A1
17
Y2
3
A2
16
Y3
4
A3
15
Y4
5
A4
14
Y5
6
A5
13
Y6
7
A6
12
Y7
8
A7
11
Y8
9
A8
OE1 OE2
1
19
Output
Enables
Data
Inputs
Non–Inverting Outputs
PIN 20 = V
CC
PIN 10 = GND
LOGIC DIAGRAM
Pinout: 20–Lead Packages (Top View)
1920 18 17 16 15 14
21 3 4 5 6 7
V
CC
13
8
12
9
11
10
OE2 Y1 Y2 Y3 Y4 Y5 Y6 Y7 Y8
OE1 A1 A2 A3 A4 A5 A6 A7 A8 GND
L L H X
L L X H
L H X X

FUNCTION TABLE
Inputs
Output Y
OE1 OE2 A
L H Z Z
Z = High Impedance X = Don’t Care
DW SUFFIX
SOIC PACKAGE
CASE 751D–04
N SUFFIX
PLASTIC PACKAGE
CASE 738–03
ORDERING INFORMATION
MC74HCTXXXAN MC74HCTXXXADW
Plastic SOIC
1
20
1
20
Page 2
MC74HCT541A
MOTOROLA High–Speed CMOS Logic Data
DL129 — Rev 6
3–2
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
V
CC
DC Supply Voltage (Referenced to GND)
– 0.5 to + 7.0
V
V
in
DC Input Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
V
out
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
I
in
DC Input Current, per Pin
± 20
mA
I
out
DC Output Current, per Pin
± 35
mA
I
CC
DC Supply Current, VCC and GND Pins
± 75
mA
P
D
Power Dissipation in Still Air Plastic DIP†
SOIC Package†
750 500
mW
T
stg
Storage Temperature Range
– 65 to + 150
_
C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds
Plastic DIP or SOIC Package
260
_
C
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
V
CC
DC Supply Voltage (Referenced to GND)
4.5
5.5
V
Vin, V
out
DC Input Voltage, Output Voltage (Referenced to GND)
0
V
CC
V
T
A
Operating Temperature Range, All Package Types
– 55
+ 125
_
C
tr, t
f
Input Rise/Fall Time (Figure 1)
0
500
ns
DC CHARACTERISTICS (Voltages Referenced to GND)
V
Guaranteed Limit
Symbol Parameter Condition
V
CC V
–55 to 25°C 85°C 125°C Unit
V
IH
Minimum High–Level Input Voltage V
out
= 0.1V or VCC – 0.1V
|I
out
| 20µA
4.5
5.5
2.0
2.0
2.0
2.0
2.0
2.0
V
V
IL
Maximum Low–Level Input Voltage V
out
= 0.1V or VCC – 0.1V
|I
out
| 20µA
4.5
5.5
0.8
0.8
0.8
0.8
0.8
0.8
V
V
OH
Minimum High–Level Output Voltage
Vin = VIH or V
IL
|I
out
| 20µA
4.5
5.5
4.4
5.4
4.4
5.4
4.4
5.4
V
Vin = VIH or V
IL|Iout
| 6.0mA 4.5 3.98 3.84 3.70
V
OL
Maximum Low–Level Output Voltage
Vin = VIH or V
IL
|I
out
| 20µA
4.5
5.5
0.1
0.1
0.1
0.1
0.1
0.1
V
Vin = VIH or V
IL|Iout
| 6.0mA 4.5 0.26 0.33 0.40
I
in
Maximum Input Leakage Current Vin = VCC or GND 5.5 ±0.1 ±1.0 ±1.0 µA
I
OZ
Maximum Three–State Leakage Current
Output in High Impedance State Vin = VIL or V
IH
V
out
= VCC or GND
5.5 ±0.5 ±5.0 ±10.0 µA
I
CC
Maximum Quiescent Supply Current (per Package)
Vin = VCC or GND I
out
= 0µA
5.5 4 40 160 µA
ICCAdditional Quiescent Supply Current
Vin = 2.4V, Any One Input
–55°C 25 to 125°C
Vin = VCC or GND, Other Inputs I
out
= 0µA
5.5
2.9 2.4
mA
1. Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
2. Total Supply Current = ICC + Σ∆ICC.
This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high–impedance cir­cuit. For proper operation, Vin and V
out
should be constrained to the
range GND v (Vin or V
out
) v VCC.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open.
Page 3
MC74HCT541A
High–Speed CMOS Logic Data DL129 — Rev 6
3–3 MOTOROLA
AC CHARACTERISTICS (V
CC
= 5.0V, CL = 50 pF, Input tr = tf = 6 ns)
Guaranteed Limit
Symbol Parameter –55 to 25°C 85°C 125°C Unit
t
PLH
,
t
PHL
Maximum Propagation Delay, Input A to Output Y (Figures 1 and 3)
23 28 32 ns
t
PLZ
,
t
PHZ
Maximum Propagation Delay, Output Enable to Output Y (Figures 2 and 4)
30 34 38 ns
t
PZL
,
t
PZH
Maximum Propagation Delay, Output Enable to Output Y (Figures 2 and 4)
30 34 38 ns
t
TLH
,
t
THL
Maximum Output Transition Time, Any Output (Figures 1 and 3)
12 15 18 ns
C
in
Maximum Input Capacitance 10 10 10 pF
C
out
Maximum Three–State Output Capacitance (Output in High Impedance State)
15 15 15 pF
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the Motorola High–
Speed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
C
PD
Power Dissipation Capacitance (Per Buffer)*
55
pF
*Used to determine the no–load dynamic power consumption: PD = CPD V
CC
2
f + ICC VCC. For load considerations, see Chapter 2 of the
Motorola High–Speed CMOS Data Book (DL129/D).
Figure 1.
CL*
*Includes all probe and jig capacitance
TEST
POINT
OE1 or OE2
1.3V
3.0V
GND
OUTPUT Y
t
PZL
OUTPUT Y
t
PZH
HIGH IMPEDANCE
V
OL
V
OH
HIGH IMPEDANCE
10%
90%
t
PLZ
t
PHZ
1.3V
1.3V
Figure 2.
SWITCHING WAVEFORMS
DEVICE UNDER
TEST
OUTPUT
TEST CIRCUITS
Figure 3. Figure 4.
CL*
*Includes all probe and jig capacitance
TEST
POINT
DEVICE
UNDER
TEST
OUTPUT
1k
CONNECT TO VCC WHEN TESTING t
PLZ
AND t
PZL
. CONNECT TO GND WHEN TESTING t
PHZ
and t
PZH
.
3.0V
GND
INPUT A
OUTPUT Y
t
PLH
t
PHL
90%
1.3V
10%
t
r
t
TLH
t
f
t
THL
90%
1.3V
10%
1.3V
Page 4
MC74HCT541A
MOTOROLA High–Speed CMOS Logic Data
DL129 — Rev 6
3–4
PIN DESCRIPTIONS
INPUTS
A1, A2, A3, A4, A5, A6, A7, A8 (PINS 2, 3, 4, 5, 6, 7, 8,
9) — Data input pins. Data on these pins appear in non–in-
verted form on the corresponding Y outputs, when the out­puts are enabled.
CONTROLS
OE1, OE2 (PINS 1, 19) — Output enables (active–low).
When a low voltage is applied to both of these pins, the out-
puts are enabled and the device functions as a non–inverting buffer. When a high voltage is applied to either input, the out­puts assume the high impedance state.
OUTPUTS
Y1, Y2, Y3, Y4, Y5, Y6, Y7, Y8 (PINS 18, 17, 16, 15, 14,
13, 12, 11) — Device outputs. Depending upon the state of
the output enable pins, these outputs are either non–invert­ing outputs or high–impedance outputs.
LOGIC DETAIL
V
CC
To 7 Other
Buffers
One of Eight
Buffers
INPUT A
OE1
OE2
OUTPUT Y
Page 5
MC74HCT541A
High–Speed CMOS Logic Data DL129 — Rev 6
3–5 MOTOROLA
OUTLINE DIMENSIONS
N SUFFIX
PLASTIC PACKAGE
CASE 738–03
ISSUE E
DW SUFFIX
PLASTIC SOIC PACKAGE
CASE 751D–04
ISSUE E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD FLASH.
M
L
J
20 PL
M
B
M
0.25 (0.010) T
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 25.66 27.171.010 1.070 B 6.10 6.600.240 0.260 C 3.81 4.570.150 0.180 D 0.39 0.550.015 0.022
G 2.54 BSC0.100 BSC
J 0.21 0.380.008 0.015
K 2.80 3.550.110 0.140
L 7.62 BSC0.300 BSC M 0 15 0 15 N 0.51 1.010.020 0.040
_ __ _
E
1.27 1.770.050 0.070
1
11
10
20
–A–
SEATING PLANE
K
N
FG
D
20 PL
–T–
M
A
M
0.25 (0.010) T
E
B
C
F
1.27 BSC0.050 BSC
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.150 (0.006) PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.13 (0.005) TOTAL IN EXCESS OF D DIMENSION AT MAXIMUM MATERIAL CONDITION.
–A–
–B–
20
1
11
10
S
A
M
0.010 (0.25) B
S
T
D20X
M
B
M
0.010 (0.25)
P10X
J
F
G
18X
K
C
–T–
SEATING PLANE
M
R
X 45
_
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A 12.65 12.95 0.499 0.510 B 7.40 7.60 0.292 0.299 C 2.35 2.65 0.093 0.104 D 0.35 0.49 0.014 0.019
F 0.50 0.90 0.020 0.035
G 1.27 BSC 0.050 BSC
J 0.25 0.32 0.010 0.012 K 0.10 0.25 0.004 0.009 M 0 7 0 7 P 10.05 10.55 0.395 0.415 R 0.25 0.75 0.010 0.029
_ _
_ _
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MC74HCT541A/D
*MC74HCT541A/D*
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