Datasheet MC14506UBCL, MC14506UBCP Datasheet (Motorola)

Page 1
MOTOROLA CMOS LOGIC DATA
1
MC14506UB
#   !#" $!   "
The MC14506UB is an expandable AND–OR–INVERT gate with inhibit and 3–state output. The expand option allows cascading with any other gate, which may be carried as far as desired as long as the propagation delay added with each gate is considered. For example, the second AOI gate in this device may be used to expand the first gate, giving an expanded 4–wide, 2–input AOI gate. This device is useful in data control and digital multiplexing applications.
3–State Output
Separate Inhibit Line
Diode Protection on All Inputs
Supply Voltage Range = 3.0 Vdc to 18 Vdc
Capable of Driving Two Low–Power TTL Loads or One Low–Power
Schottky TTL Load Over the Rated Temperature Range
MAXIMUM RATINGS* (Voltages Referenced to V
SS
)
Symbol
Parameter Value Unit
V
DD
DC Supply Voltage – 0.5 to + 18.0 V
Vin, V
out
Input or Output Voltage (DC or Transient) – 0.5 to VDD + 0.5 V
Iin, I
out
Input or Output Current (DC or Transient), per Pin
± 10 mA
P
D
Power Dissipation, per Package† 500 mW
T
stg
Storage Temperature – 65 to + 150
_
C
T
L
Lead Temperature (8–Second Soldering) 260
_
C
*Maximum Ratings are those values beyond which damage to the device may occur. †Temperature Derating:
Plastic “P and D/DW” Packages: – 7.0 mW/_C From 65_C To 125_C Ceramic “L” Packages: – 12 mW/_C From 100_C To 125_C
LOGIC DIAGRAM
AA1 BA2 CA3 DA4 EA5
INH 6
DIS 14
EB13 DB12
CB11 BB10 AB9
3–STATE OUTPUT DISABLE
15 Z
A
7 Z
B
VDD = PIN 16
VSS = PIN 8
Z = (AB + CD + E
+ I)

SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1995
REV 3 1/94

L SUFFIX
CERAMIC
CASE 620
ORDERING INFORMATION
MC14XXXUBCP Plastic MC14XXXUBCL Ceramic MC14XXXUBD SOIC
TA = – 55° to 125°C for all packages.
P SUFFIX
PLASTIC
CASE 648
D SUFFIX
SOIC
CASE 751B
This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, pre­cautions must be taken to avoid applications of any voltage higher than maximum rated volt­ages to this high–impedance circuit. For proper operation, Vin and V
out
should be constrained
to the range VSS v (Vin or V
out
) v VDD.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either V
SS
or VDD). Unused outputs must be left open.
TRUTH TABLE
A B C D E Inhibit Disable Z
0 0 0 0 1 0 0 1 0 X 0 X 1 0 0 1 0 X X 0 1 0 0 1 X 0 0 X 1 0 0 1
X 0 X 0 1 0 0 1 1 1 X X X X 0 0 X X 1 1 X X 0 0 X X X X 0 X 0 0
X X X X X 1 0 0 X X X X X X 1 High
Impedance
X = Don’t Care
Page 2
MOTOROLA CMOS LOGIC DATAMC14506UB
2
ELECTRICAL CHARACTERISTICS (Voltages Referenced to V
SS
)
V
– 55_C 25_C 125_C
Characteristic
Symbol
V
DD
Vdc
Min Max Min Typ # Max Min Max
Unit
Output Voltage
“0” Level
Vin = VDD or 0
V
OL
5.0 10 15
— — —
0.05
0.05
0.05
— — —
0 0 0
0.05
0.05
0.05
— — —
0.05
0.05
0.05
Vdc
“1” Level
Vin = 0 or V
DD
V
OH
5.0 10 15
4.95
9.95
14.95
— — —
4.95
9.95
14.95
5.0 10 15
— — —
4.95
9.95
14.95
— — —
Vdc
Input Voltage
“0” Level (VO = 4.5 or 0.5 Vdc) (VO = 9.0 or 1.0 Vdc) (VO = 13.5 or 1.5 Vdc)
V
IL
5.0 10 15
— — —
1.0
2.0
2.5
— — —
2.25
4.50
6.75
1.0
2.0
2.5
— — —
1.0
2.0
2.5
Vdc
“1” Level (VO = 0.5 or 4.5 Vdc) (VO = 1.0 or 9.0 Vdc) (VO = 1.5 or 13.5 Vdc)
V
IH
5.0 10 15
4.0
8.0
12.5
— — —
4.0
8.0
12.5
2.75
5.50
8.25
— — —
4.0
8.0
12.5
— — —
Vdc
Output Drive Current
(VOH = 2.5 Vdc) Source (VOH = 4.6 Vdc) (VOH = 9.5 Vdc) (VOH = 13.5 Vdc)
I
OH
5.0
5.0 10 15
– 3.0
– 0.64
– 1.6 – 4.2
— — — —
– 2.4
– 0.51
– 1.3 – 3.4
– 4.2 – 0.88 – 2.25
– 8.8
— — — —
– 1.7
– 0.36
– 0.9 – 2.4
— — — —
mAdc
(VOL = 0.4 Vdc) Sink (VOL = 0.5 Vdc) (VOL = 1.5 Vdc)
I
OL
5.0 10 15
0.64
1.6
4.2
— — —
0.51
1.3
3.4
0.88
2.25
8.8
— — —
0.36
0.9
2.4
— — —
mAdc
Input Current I
in
15 ± 0.1 ±0.00001 ± 0.1 ± 1.0 µAdc
Input Capacitance
(Vin = 0)
C
in
5.0 7.5 pF
Quiescent Current
(Per Package)
I
DD
5.0 10 15
— — —
1.0
2.0
4.0
— — —
0.002
0.004
0.006
1.0
2.0
4.0
— — —
30 60
120
µAdc
Total Supply Current**†
(Dynamic plus Quiescent, Per Package) (CL = 50 pF on all outputs, all buffers switching)
I
T
5.0 10 15
IT = (0.6 µA/kHz) f + I
DD
IT = (1.1 µA/kHz) f + I
DD
IT = (1.7 µA/kHz) f + I
DD
µAdc
Three–State Leakage Current I
TL
15 ± 0.1 ± 0.0001 ± 0.1 ± 3.0 µAdc
#Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance. **The formulas given are for the typical characteristics only at 25_C. †To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL – 50) Vfk
where: IT is in µA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.002.
PIN ASSIGNMENT
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
D
B
E
B
DISABLE
Z
A
V
DD
A
B
B
B
C
B
D
A
C
A
B
A
A
A
V
SS
Z
B
INH
E
A
Page 3
MOTOROLA CMOS LOGIC DATA
3
MC14506UB
SWITCHING CHARACTERISTICS* (C
L
= 50 pF, TA = 25_C)
Characteristic
Symbol V
DD
Min Typ # Max Unit
Output Rise and Fall Time
t
TLH
, t
THL
= (1.5 ns/pF) CL + 25 ns
t
TLH
, t
THL
= (0.75 ns/pF) CL + 12.5 ns
t
TLH
, t
THL
= (0.55 ns/pF) CL + 9.5 ns
t
TLH
, t
THL
5.0 10 15
— — —
100
50 40
200 100
80
ns
Data Propagation Delay Time
t
PLH
= (1.7 ns/pF) CL + 210 ns
t
PLH
= (0.66 ns/pF) CL + 77 ns
t
PLH
= (0.5 ns/pF) CL + 50 ns
t
PLH
5.0 10 15
— — —
295 110
75
580 225 180
ns
t
PHL
= (1.7 ns/pF) CL + 185 ns
t
PHL
= (0.66 ns/pF) CL + 62 ns
t
PHL
= (0.5 ns/pF) CL + 40 ns
t
PHL
5.0 10 15
— — —
270
95 65
480 175 140
ns
Expand Propagation Delay Time
t
PLH
= (1.7 ns/pF) CL + 95 ns
t
PLH
= (0.66 ns/pF) CL + 42 ns
t
PLH
= (0.5 ns/pF) CL + 25 ns
t
PLH
5.0 10 15
— — —
180
75 50
430 160 125
ns
t
PHL
= (1.7 ns/pF) CL + 115 ns
t
PHL
= (0.66 ns/pF) CL + 47 ns
t
PHL
= (0.5 ns/pF) CL + 30 ns
t
PHL
5.0 10 15
— — —
200
80 55
330 110
90
ns
Inhibit Propagation Delay Time
t
PLH
= (1.7 ns/pF) CL + 135 ns
t
PLH
= (0.66 ns/pF) CL + 67 ns
t
PLH
= (0.5 ns/pF) CL + 40 ns
t
PLH
5.0 10 15
— — —
220 100
65
500 225 160
ns
t
PHL
= (1.7 ns/pF) CL + 145 ns
t
PHL
= (0.66 ns/pF) CL + 62 ns
t
PHL
= (0.5 ns/pF) CL + 35 ns
t
PHL
5.0 10 15
— — —
230
95 60
400 175 150
ns
3–State Propagation Delay Time
“1” to High Impedance
t
PHZ
5.0 10 15
— — —
60 45 35
150 110
90
ns
“0” to High Impedance t
PLZ
5.0 10 15
— — —
90 55 40
225 140 100
ns
High Impedance to “1” t
PZH
5.0 10 15
— — —
110
50 40
300 125 100
ns
High Impedance to “0” t
PZL
5.0 10 15
— — —
170
70 50
425 175 125
ns
*The formulas given are for the typical characteristics only at 25_C. #Data labelled “Typ” Is not to be used for design purposes but is intended as an indication of the IC’s potential performance.
Figure 1. Typical Voltage Transfer Characteristics
(a) Expand Inputs (b) Data Inputs
161412108.06.04.02.00
16 14 12
10
8.0
6.0
4.0
2.0 0
Vin, INPUT VOLTAGE (Vdc)
V
out
, OUTPUT VOLTAGE (Vdc)
a
b
c
c
a
b
a b
c
VDD = 15 Vdc
10 Vdc
5.0 Vdc
a b c
TA = + 125°C TA = + 25
°
C
TA = – 55
°
C
UNUSED INPUTS CONNECTED TO V
SS
161412108.06.04.02.00
16 14 12
10
8.0
6.0
4.0
2.0 0
Vin, INPUT VOLTAGE (Vdc)
V
out
, OUTPUT VOLTAGE (Vdc)
a b c
TA = + 125°C TA = + 25
°
C
TA = – 55
°
C
A AND B CONNECTED TO V
in
ENABLE INPUT CONNECTED TO VDD. OTHER INPUTS CONNECTED TO VSS.
VDD = 15 Vdc
10 Vdc
5.0 Vdc
b
c
a
b
a
c
b
c
a
Page 4
MOTOROLA CMOS LOGIC DATAMC14506UB
4
Figure 2. Typical Output Source
Characteristics Test Circuit
Figure 3. Typical Output Sink
Characteristics Test Circuit
EXTERNAL
POWER SUPPLY
I
OH
V
OH
V
DD
16
VSS8
Z
A
Z
B
INH A
A
B
A
C
A
D
A
E
A
A
B
B
B
C
B
D
B
E
B
DIS
V
DD
16
V
OL
I
OL
EXTERNAL
POWER SUPPLY
Z
A
Z
B
INH A
A
B
A
C
A
D
A
E
A
A
B
B
B
C
B
D
B
E
B
DIS
VSS8
Figure 4. 3–State Leakage Current
Test Circuit
Figure 5. Typical Power Dissipation
Test Circuit
V
DD
V
DD
I
TL
16
VSS8
Z
A
Z
B
INH A
A
B
A
C
A
D
A
E
A
A
B
B
B
C
B
D
B
E
B
DIS
PULSE
GENERATOR
50% DUTY CYCLE
0.01
µ
F
CERAMIC
V
DD
16
Z
A
Z
B
INH A
A
B
A
C
A
D
A
E
A
A
B
B
B
C
B
D
B
E
B
DIS
VSS8
CLC
L
I
DD
500
µ
F
B
A
Page 5
MOTOROLA CMOS LOGIC DATA
5
MC14506UB
Figure 6. Switching Time Test Circuit and Waveforms
(Data Inputs)
16
VSS8
Z
A
Z
B
INH A
A
B
A
C
A
D
A
E
A
A
B
B
B
C
B
D
B
E
B
DIS
PULSE
GENERATOR
C
L
V
DD
C
L
20 ns 20 ns
V
DD
V
SS
V
OH
V
OL
OUTPUT
INPUT
90%
50%
10%
t
PHL
t
PLH
50%
90%
10%
t
THL
t
TLH
V
DD
V
out
V
DD
16
Z
A
Z
B
INH A
A
B
A
C
A
D
A
E
A
A
B
B
B
C
B
D
B
E
B
DIS
VSS8
PULSE
GENERATOR
B
A
C
L
1 k
A
B
S2
20 ns
20 ns
DISABLE
INPUT
90%
50%
10%
t
PLZ
t
PZL
V
OH
V
OL
10%
t
PZH
t
PHZ
90%
10%
90%
OUTPUT
2.5 V @ VDD = 5 V, 10 V AND 15 V
2 V @ VDD = 5 V
6 V @ VDD = 10 V
10 V @ VDD = 15 V
S1
*To test other side of circuit connect to this output and
change switch (S1) to other expand input (E).
SWITCH POSITIONS
TEST S1 S2
t
PLZ
A A
t
PHZ
B B
t
PZL
A A
t
PZH
B B
Figure 7. Switching Time Test Circuit and Waveforms
(For 3–State Output)
Page 6
MOTOROLA CMOS LOGIC DATAMC14506UB
6
OUTLINE DIMENSIONS
P SUFFIX
PLASTIC DIP PACKAGE
CASE 648–08
ISSUE R
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD FLASH.
5. ROUNDED CORNERS OPTIONAL.
–A–
B
F
C
S
H
G
D
J
L
M
16 PL
SEATING
1 8
916
K
PLANE
–T–
M
A
M
0.25 (0.010) T
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.740 0.770 18.80 19.55 B 0.250 0.270 6.35 6.85 C 0.145 0.175 3.69 4.44 D 0.015 0.021 0.39 0.53 F 0.040 0.70 1.02 1.77 G 0.100 BSC 2.54 BSC H 0.050 BSC 1.27 BSC J 0.008 0.015 0.21 0.38 K 0.110 0.130 2.80 3.30 L 0.295 0.305 7.50 7.74 M 0 10 0 10 S 0.020 0.040 0.51 1.01
____
L SUFFIX
CERAMIC DIP PACKAGE
CASE 620–10
ISSUE V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL.
4. DIMENSION F MAY NARROW TO 0.76 (0.030) WHERE THE LEAD ENTERS THE CERAMIC BODY.
–A–
–B–
–T–
F
E
G
N
K
C
SEATING PLANE
16 PLD
S
A
M
0.25 (0.010) T
16 PLJ
S
B
M
0.25 (0.010) T
M
L
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.750 0.785 19.05 19.93 B 0.240 0.295 6.10 7.49 C ––– 0.200 ––– 5.08 D 0.015 0.020 0.39 0.50 E 0.050 BSC 1.27 BSC F 0.055 0.065 1.40 1.65 G 0.100 BSC 2.54 BSC H 0.008 0.015 0.21 0.38 K 0.125 0.170 3.18 4.31 L 0.300 BSC 7.62 BSC M 0 15 0 15 N 0.020 0.040 0.51 1.01
_ _ _ _
16 9
1 8
Page 7
MOTOROLA CMOS LOGIC DATA
7
MC14506UB
OUTLINE DIMENSIONS
D SUFFIX
PLASTIC SOIC PACKAGE
CASE 751B–05
ISSUE J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION.
1 8
16 9
SEATING
PLANE
F
J
M
R
X 45
_
G
8 PLP
–B–
–A–
M
0.25 (0.010) B
S
–T–
D
K
C
16 PL
S
B
M
0.25 (0.010) A
S
T
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A 9.80 10.00 0.386 0.393 B 3.80 4.00 0.150 0.157 C 1.35 1.75 0.054 0.068 D 0.35 0.49 0.014 0.019
F 0.40 1.25 0.016 0.049
G 1.27 BSC 0.050 BSC
J 0.19 0.25 0.008 0.009 K 0.10 0.25 0.004 0.009 M 0 7 0 7
P 5.80 6.20 0.229 0.244 R 0.25 0.50 0.010 0.019
_ _ _ _
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MC14506UB/D
*MC14506UB/D*
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