Datasheet MC14502BCL, MC14502BCP Datasheet (Motorola)

Page 1
MOTOROLA CMOS LOGIC DATAMC14502B
320
  
The MC14502B is a strobed hex buffer/inverter with 3–state outputs, an inhibit control, and guaranteed TTL drive over the temperature range. The 3–state output simplifies design by allowing a common bus.
Separate Output Disable Control
3–State Output
Capable of Driving 4LSTTL Loads Over the Rated Temperature Range
MAXIMUM RATINGS* (Voltages Referenced to V
SS
)
Symbol
Parameter
Value
Unit
V
DD
DC Supply Voltage
– 0.5 to + 18.0
V
Vin, V
out
Input or Output Voltage (DC or Transient)
– 0.5 to VDD + 0.5
V
I
in
Input Current (DC or Transient), per Pin
± 10
mA
I
out
Output Current (DC or Transient), per Pin
+ 30
mA
P
D
Power Dissipation, per Package†
500
mW
T
stg
Storage Temperature
– 65 to + 150
_
C
T
L
Lead Temperature (8–Second Soldering)
260
_
C
*Maximum Ratings are those values beyond which damage to the device may occur. †Temperature Derating:
Plastic “P and D/DW” Packages: – 7.0 mW/_C From 65_C To 125_C Ceramic “L” Packages: – 12 mW/_C From 100_C To 125_C
CIRCUIT DIAGRAM
DISABLE
INHIBIT
D1
V
DD
V
SS
Q1
Other five buffers are identical
TRUTH TABLE
D
n
Inhibit Disable Q
n
0 0 0 1 1 0 0 0 X 1 0 0 X X 1 High
Impedance
X = Don’t Care

SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1995
REV 3 1/94

L SUFFIX
CERAMIC CASE 620
ORDERING INFORMATION
TA = – 55° to 125°C for all packages.
P SUFFIX
PLASTIC
CASE 648
DW SUFFIX
SOIC
CASE 751G
LOGIC DIAGRAM
MC14XXXBCP Plastic MC14XXXBCL Ceramic MC14XXXBDW SOIC
14 Q6
11 Q5
9 Q4
2 Q3
7 Q2
5 Q1
3–STATE OUTPUT DISABLE
INHIBIT 12
4
D1 3
D2 6
D3 1
D4 10
D5 13
D6 15
VDD = PIN 16
VSS = PIN 8
Page 2
MOTOROLA CMOS LOGIC DATA
321
MC14502B
ELECTRICAL CHARACTERISTICS (Voltages Referenced to V
SS
)
V
– 55_C
25_C
125_C
Characteristic
Symbol
V
DD
Vdc
Min
Max
Min
Typ #
Max
Min
ÎÎÎ
ÎÎÎ
ÎÎÎ
Max
Unit
Output Voltage
“0” Level
Vin = VDD or 0
V
OL
5.0 10 15
— — —
0.05
0.05
0.05
— — —
0 0 0
0.05
0.05
0.05
— — —
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
0.05
0.05
0.05
Vdc
“1” Level
Vin = 0 or V
DD
V
OH
5.0 10 15
4.95
9.95
14.95
— — —
4.95
9.95
14.95
5.0 10 15
— — —
4.95
9.95
14.95
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
— — —
Vdc
Input Voltage
“0”’ Level (VO = 4.5 or 0.5 Vdc) (VO = 9.0 or 1.0 Vdc) (VO = 13.5 or 1.5 Vdc)
V
IL
5.0 10 15
— — —
1.5
3.0
4.0
— — —
2.25
4.50
6.75
1.5
3.0
4.0
— — —
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
1.5
3.0
4.0
Vdc
“1” Level (VO = 0.5 or 4.5 Vdc) (VO = 1.0 or 9.0 Vdc) (VO = 1.5 or 13.5 Vdc)
V
IH
5.0 10 15
3.5
7.0 11
— — —
3.5
7.0 11
2.75
5.50
8.25
— — —
3.5
7.0 11
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
— — —
Vdc
Output Drive Current
(VOH = 2.5 Vdc) Source (VOH = 4.6 Vdc) (VOH = 9.5 Vdc) (VOH = 13.5 Vdc)
I
OH
5.0
5.0 10 15
– 3.0
– 0.64
– 1.6 – 4.2
— — — —
– 2.4
– 0.51
– 1.3 – 3.4
– 4.2 – 0.88 – 2.25
– 8.8
— — — —
– 1.7
– 0.36
– 0.9 – 2.4
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
— — — —
mAdc
(VOL = 0.4 Vdc) Sink (VOL = 0.5 Vdc) (VOL = 1.5 Vdc)
I
OL
5.0 10 15
3.5
7.8 29
— — —
2.8
6.3 24
6.6 17 66
— — —
2.0
4.4 16
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
— — —
mAdc
Input Current
I
in
15
± 0.1
±0.00001
± 0.1
ÎÎÎ
ÎÎÎ
ÎÎÎ
± 1.0
µAdc
Input Capacitance
(Vin = 0)
C
in
5.0
7.5
ÎÎÎ
ÎÎÎ
ÎÎÎ
pF
Quiescent Current
(Per Package)
I
DD
5.0 10 15
— — —
1.0
2.0
4.0
— — —
0.002
0.004
0.006
1.0
2.0
4.0
— — —
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
30 60
120
µAdc
Total Supply Current**†
(Dynamic plus Quiescent, Per Package) (CL = 50 pF on all outputs, all buffers switching)
I
T
5.0 10 15
IT = (2.7 µA/kHz) f + I
DD
IT = (5.3 µA/kHz) f + I
DD
IT = (8.0 µA/kHz) f + I
DD
µAdc
Three–State Leakage Current
I
TL
15
± 0.1
± 0.0001
± 0.1
ÎÎÎ
ÎÎÎ
ÎÎÎ
± 3.0
µAdc
#Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance. **The formulas given are for the typical characteristics only at 25_C. †To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL – 50) Vfk
where: IT is in µA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.006.
This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high-impedance circuit. For proper operation, Vin and V
out
should be constrained to the range VSS (Vin or V
out
) VDD.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either VSS or VDD). Unused outputs must be left open.
PIN ASSIGNMENT
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
INH
D5
Q6
V
DD
Q4
D4
Q5
DISABLE
D1
Q3
D3
V
SS
Q2
D2
Q1
D6
Page 3
MOTOROLA CMOS LOGIC DATAMC14502B
322
SWITCHING CHARACTERISTICS* (C
L
= 50 pF, TA = 25_C)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ОООООООООО
ОООООООООО
ОООООООООО
All Types
Characteristic
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Symbol
V
DD
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Min
Typ #
Max
Unit
Output Rise Time
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
t
TLH
5.0 10 15
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
— — —
100
50 40
200 100
80
ns
Output Fall Time
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
t
THL
5.0 10 15
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
— — —
40 20 15
80 40 30
ns
Propagation Delay Time Data to Q
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
t
PHL
5.0 10 15
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
— — —
135
55 40
270 110
80
ns
Propagation Delay Time, Inhibit to Q
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
t
PHL
5.0 10 15
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
— — —
335 145
95
670 290 190
ns
Propagation Delay Time Data to Q, Inhibit to Q
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
t
PLH
5.0 10 15
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
— — —
295 130
95
590 260 190
ns
3–State Propagation Delay, Output “1” to High Impedance
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
t
PHZ
5.0 10 15
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
— — —
65 30 25
130
60 50
ns
3–State Propagation Delay, High Impedance to “1” Level
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
t
PZH
5.0 10 15
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
— — —
260 105
80
520 210 160
ns
3–State Propagation Delay, Output “0” to High Impedance
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
t
PLZ
5.0 10 15
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
— — —
150
70 55
300 140 110
ns
3–State Propagation Delay, High Impedance to “0” Level
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
t
PZL
5.0 10 15
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
— — —
160
65 50
320 130 100
ns
*The formulas given are for the typical characteristics only at 25_C. #Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.
Figure 1. Typical Output Source
Current Test Circuit (IOH)
Figure 2. Typical Output Sink
Current Test Circuit (IOL)
16 + V
DD
DIS INH D1 D2 D3 D4 D5 D6
Q1 Q2 Q3 Q4 Q5 Q6
8
V
SS
V
OH
I
OH
V
out
VGS = –V
DD
VDS = VOH – V
DD
DIS INH D1 D2 D3 D4 D5 D6
Q1 Q2 Q3 Q4 Q5 Q6
I
OL
V
OL
V
out
16 + V
DD
8
V
SS
VDS = V
OL
VGS = V
DD
Page 4
MOTOROLA CMOS LOGIC DATA
323
MC14502B
Figure 3. Power Dissipation Test Circuit and Waveform
DIS INH D1 D2 D3 D4 D5 D6
Q1 Q2 Q3 Q4 Q5 Q6
V
DD
I
D
PULSE
GENERATOR
C
L
C
L
C
L
C
L
C
L
C
L
V
in
20 ns 20 ns
V
DD
V
SS
90%
50%
10%
50% DUTY CYCLE
Figure 4. AC Test Circuit and Waveforms
(t
TLH
, t
THL
, T
PLH
, and t
PHL
)
Figure 5. 3–State AC Test Circuit and Waveforms
(t
PHZ
, t
PLZ
, t
PZH
, t
PZL
)
Switch Positions for 3–State Test
Test S1 S2 S3 S4
t
PHZ
Open Closed Closed Open
t
PLZ
Closed Open Open Closed
t
PZL
Closed Open Open Closed
t
PZH
Open Closed Closed Open
DISABLE INHIBIT D1 D2 D3 D4 D5 D6
Q1 Q2 Q3 Q4 Q5 Q6
C
L
16 V
DD
8
V
SS
PULSE
GENERATOR
20 ns 20 ns
V
DD
V
SS
V
OH
V
OL
90%
10%
50%
50%
90%
10%
t
PLH
t
PHL
t
THL
t
TLH
OUTPUT
(TESTS 1 AND 2)
For all t
TLH
, t
THL
, t
PHL
, and t
PLH
measurements V
in
may be applied to any other Dn input or to inhibit.
16 V
DD
PULSE
GENERATOR
V
DD
C
L
1 k
S1
S2
V
DD
S4
S3
8
V
SS
DISABLE INHIBIT D1 D2 D3 D4 D5 D6
Q1 Q2 Q3 Q4 Q5 Q6
20 ns 20 ns
V
DD
V
SS
V
OH
t
PLZ
t
PHZ
t
PZH
t
PZL
50%
90%
10%
10%
90%
10%
90%
0.5 V @ VDD = 5 V, 10 V, AND 15 V
2 V @ VDD = 5 V
6 V @ VDD = 10 V
10 V @ VDD = 15 V
V
OL
INPUT
DISABLE
Q OUTPUTS
Page 5
MOTOROLA CMOS LOGIC DATAMC14502B
324
OUTLINE DIMENSIONS
P SUFFIX
PLASTIC DIP PACKAGE
CASE 648–08
ISSUE R
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD FLASH.
5. ROUNDED CORNERS OPTIONAL.
–A–
B
F
C
S
H
G
D
J
L
M
16 PL
SEATING
1 8
916
K
PLANE
–T–
M
A
M
0.25 (0.010) T
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.740 0.770 18.80 19.55 B 0.250 0.270 6.35 6.85 C 0.145 0.175 3.69 4.44 D 0.015 0.021 0.39 0.53 F 0.040 0.70 1.02 1.77 G 0.100 BSC 2.54 BSC H 0.050 BSC 1.27 BSC J 0.008 0.015 0.21 0.38 K 0.110 0.130 2.80 3.30 L 0.295 0.305 7.50 7.74 M 0 10 0 10 S 0.020 0.040 0.51 1.01
____
L SUFFIX
CERAMIC DIP PACKAGE
CASE 620–10
ISSUE V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL.
4. DIMENSION F MAY NARROW TO 0.76 (0.030) WHERE THE LEAD ENTERS THE CERAMIC BODY.
–A–
–B–
–T–
F
E
G
N
K
C
SEATING PLANE
16 PLD
S
A
M
0.25 (0.010) T
16 PLJ
S
B
M
0.25 (0.010) T
M
L
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.750 0.785 19.05 19.93 B 0.240 0.295 6.10 7.49 C ––– 0.200 ––– 5.08 D 0.015 0.020 0.39 0.50 E 0.050 BSC 1.27 BSC F 0.055 0.065 1.40 1.65 G 0.100 BSC 2.54 BSC H 0.008 0.015 0.21 0.38 K 0.125 0.170 3.18 4.31 L 0.300 BSC 7.62 BSC M 0 15 0 15 N 0.020 0.040 0.51 1.01
_ _ _ _
16 9
1 8
Page 6
MOTOROLA CMOS LOGIC DATA
325
MC14502B
OUTLINE DIMENSIONS
DW SUFFIX
PLASTIC SOIC PACKAGE
CASE 751G–02
ISSUE A
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A 10.15 10.45 0.400 0.411 B 7.40 7.60 0.292 0.299 C 2.35 2.65 0.093 0.104 D 0.35 0.49 0.014 0.019 F 0.50 0.90 0.020 0.035 G 1.27 BSC 0.050 BSC J 0.25 0.32 0.010 0.012 K 0.10 0.25 0.004 0.009 M 0 7 0 7 P 10.05 10.55 0.395 0.415 R 0.25 0.75 0.010 0.029
M
B
M
0.010 (0.25)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.13 (0.005) TOTAL IN EXCESS OF D DIMENSION AT MAXIMUM MATERIAL CONDITION.
–A–
–B– P8X
G14X
D16X
SEATING PLANE
–T–
S
A
M
0.010 (0.25) B
S
T
16 9
81
F
J
R
X 45
_
_ _ _ _
M
C
K
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MC14502B/D
*MC14502B/D*
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