Datasheet MC145017P, MC74HCT573ADT, MC74HCT573ADW Datasheet (Motorola)

Page 1
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SEMICONDUCTOR TECHNICAL DATA
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
High–Performance Silicon–Gate CMOS
The MC74HCT573A is identical in pinout to the LS573. This device may be used as a level converter for interfacing TTL or NMOS outputs to High–Speed CMOS inputs.
These latches appear transparent to data (i.e., the outputs change asynchronously) when Latch Enable is high. When Latch Enable goes low, data meeting the setup and hold times becomes latched.
The Output Enable input does not affect the state of the latches, but when Output Enable is high, all device outputs are forced to the high–impedance state. Thus, data may be latched even when the outputs are not enabled.
The HCT573A is identical in function to the HCT373A but has the Data Inputs on the opposite side of the package from the outputs to facilitate PC board layout.
The HCT573A is the noninverting version of the HC563A.
Output Drive Capability: 15 LSTTL Loads
TTL/NMOS–Compatible Input Levels
Outputs Directly Interface to CMOS, NMOS and TTL
Operating Voltage Range: 4.5 to 5.5 V
Low Input Current: 10 µA
In Compliance with the Requirements Defined by JEDEC Standard
No. 7A
Chip Complexity: 234 FETs or 58.5 Equivalent Gates
— Improved Propagation Delays — 50% Lower Quiescent Power
LOGIC DIAGRAM
D0 D1 D2
DATA
INPUTS
D3 D4
D5 D6 D7
LATCH ENABLE
OUTPUT ENABLE
Design Criteria
Internal Gate Count*
219 3 4 5 6 7 8 9
11 1
Q0
18
Q1
17
Q2
16 15
14 13
12
PIN 20 = V PIN 10 = GND
NONINVERTING
Q3 Q4
Q5 Q6 Q7
CC
Value
58.5
OUTPUTS
Units
ea
N SUFFIX
20
1
PLASTIC PACKAGE
CASE 738–03
DW SUFFIX
20
1
20
1
SOIC PACKAGE
CASE 751D–04
DT SUFFIX
TSSOP PACKAGE
CASE 948E–02
ORDERING INFORMATION
MC74HCTXXXAN MC74HCTXXXADW MC74HCTXXXADT
Plastic SOIC TSSOP
PIN ASSIGNMENT
OUTPUT
ENABLE
D0 D1 D2
D3 5 D4 D5 D6
D7
GND
1 2
3 4
6 7 8
9 10
20 19
18 17 16 15 14 13 12
11
V Q0
Q1 Q2 Q3 Q4 Q5 Q6 Q7
LATCH ENABLE
FUNCTION TABLE
Inputs Output
Output Latch Enable Enable D Q
LHHH LHLL L L X No Change
HXXZ
X = Don’t Care Z = High Impedance
CC
Internal Gate Propagation Delay Internal Gate Power Dissipation
ОООООООО
Speed Power Product
*Equivalent to a two–input NAND gate.
10/96
Motorola, Inc. 1996
1.5
5.0
ÎÎ
0.0075
1
ns
µW
ÎÎ
pJ
REV 7
Page 2
MC74HCT573A
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Current
V
i
V
CC
GND, Other Inputs
MAXIMUM RATINGS*
Symbol
V
V
I I
Î
Î
T
Î
Î
DC Supply Voltage (Referenced to GND)
CC
V
DC Input Voltage (Referenced to GND)
in
DC Output Voltage (Referenced to GND)
out
I
DC Input Current, per Pin
in
DC Output Current, per Pin
out
DC Supply Current, VCC and GND Pins
CC
P
Power Dissipation in Still Air Plastic DIP†
D
ОООООООООООО
ОООООООООООО
Storage Temperature
stg
ОООООООООООО
T
Lead Temperature, 1 mm from Case for 10 Seconds
L
ОООООООООООО
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: –10 mW/_C from 65_ to 125_C
SOIC Package: –7 mW/_C from 65_ to 125_C TSSOP Package: –6.1 mW/°C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol
V
Vin, V
T
tr, t
DC Supply Voltage (Referenced to GND)
CC
DC Input Voltage, Output Voltage (Referenced to GND)
out
Operating Temperature, All Package Types
A
Input Rise and Fall Time (Figure 1)
f
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
ÎÎ
Symbol
V
IH
V
IL
ÎÎ
V
OH
ÎÎ
ÎÎÎОООООООÎООООООО
V
OL
ÎÎ
I
in
I
OZ
ÎÎ
I
CC
ÎÎ
I
CC
NOTE:Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
ООООООО
Minimum High–Level Input Voltage
Maximum Low–Level Input
ООООООО
Voltage Minimum High–Level Output
Voltage
ООООООО
Maximum Low–Level Output Voltage
ООООООО
Maximum Input Leakage Current Maximum Three–State
Leakage Current
ООООООО
Maximum Quiescent Supply
ООООООО
Current (per Package) Additional Quiescent Supply
Parameter
SOIC Package†
TSSOP Package†
(Plastic DIP, TSSOP or SOIC Package)
Parameter
Parameter
ООООООО
Test Conditions
V
= 0.1 V or VCC – 0.1 V
out
|I
| v 20 µA
out
V
= 0.1 V or VCC – 0.1 V
out
ООООООО
|I
| v 20 µA
out
Vin = VIH or V |I
| v 20 µA
out
ООООООО
Vin = VIH or V |I
| v 6.0 mA
out
Vin = VIH or V |I
| v 20 µA
out
ООООООО
Vin = VIH or V |I
| v 6.0 mA
out
Vin = VCC or GND Output in High–Impedance State
Vin = VIL or V
ООООООО
V
= VCC or GND
out
Vin = VCC or GND
ООООООО
I
v 0 µA
out
Vin = 2.4 V, Any One Input
=
=
l
out
n
or
= 0 µA
Value
– 0.5 to + 7.0 – 0.5 to VCC + 0.5 – 0.5 to VCC + 0.5
± 20 ± 25 ± 50
750 500
ÎÎÎÎ
450
ÎÎÎÎ
– 65 to + 150
ÎÎÎÎ
ÎÎÎÎ
260
Min
4.5 0
– 55
0
IL
IL
IL
IL
IH
Max
5.5
V
CC
+ 125
500
Unit
V V
V mA mA mA
mW
Î
Î
_
C
Î
_
C
Î
Unit
V
V
_
C
ns
V
CC
ÎÎ
V
4.5
5.5
4.5
ÎÎ
5.5
4.5
5.5
ÎÎ
ÎÎ
4.5
4.5
5.5
ÎÎ
4.5
5.5
5.5
ÎÎ
5.5
ÎÎ
5.5
This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high–impedance cir­cuit. For proper operation, Vin and V
should be constrained to the
out
range GND v (Vin or V
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open.
Guaranteed Limit
– 55 to
ÎÎ
25_C
ÎÎ
ÎÎ
ÎÎ
ÎÎ
± 0.1 ± 0.5
ÎÎ
ÎÎ
– 55_C
2.0
2.0
0.8
0.8
4.4
5.4
3.98
0.1
0.1
0.26
4.0
2.9
ÎÎ
v
85_C
2.0
2.0
0.8
ÎÎ
0.8
4.4
5.4
ÎÎ
ÎÎ
3.84
0.1
0.1
ÎÎ
0.33
± 1.0 ± 5.0
ÎÎ
40
ÎÎ
25_C to 125_C
ÎÎ
v
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
2.4
out
125_C
2.0
2.0
0.8
0.8
4.4
5.4
3.7
0.1
0.1
0.4
± 1.0
± 10
160
) v VCC.
Î
Unit
Î
Î
Î
Î
µA µA
Î
µA
Î
mA
V
V
V
V
MOTOROLA High–Speed CMOS Logic Data
2
DL129 — Rev 6
Page 3
MC74HCT573A
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ÎÎÎÎ
ÎÎ ÎÎ
ÎÎ
ÎÎ ÎÎ
AC ELECTRICAL CHARACTERISTICS (V
= 5.0 V ± 10%, CL = 50 pF, Input tr = tf = 6.0 ns)
CC
Guaranteed Limit
– 55 to
ÎÎ
Symbol
t
PLH
t
PHL
ÎÎ
t
PLH
ÎÎ
t
PHL
T
PLZ,
ÎÎ
T
PHZ
t
TZL,
t
TZH
ÎÎ
t
TLH
t
THL
C
in
C
out
ÎÎ
ООООООООООООООООО
,
Maximum Propagation Delay, Input D to Output Q
(Figures 1 and 5)
ООООООООООООООООО
Maximum Propagation Delay, Latch Enable to Q
ООООООООООООООООО
(Figures 2 and 5)
Parameter
Maximum Propagation Delay, Output Enable to Q
ООООООООООООООООО
(Figures 3 and 6)
Maximum Propagation Delay, Output Enable to Q
(Figures 3 and 6)
ООООООООООООООООО
,
Maximum Output Transition Time, any Output
(Figures 1 and 5) Maximum Input Capacitance Maximum Three–State Output Capacitance
ООООООООООООООООО
(Output in High–Impedance State)
25_C
ÎÎ
30
ÎÎ
30
ÎÎ
28
ÎÎ
28
ÎÎ
12
10 15
ÎÎ
ÎÎ
v
85_C
38
ÎÎ
38
ÎÎ
35
ÎÎ
35
ÎÎ
15
10 15
ÎÎ
ÎÎ
v
125_C
45
ÎÎ
45
ÎÎ
42
ÎÎ
42
ÎÎ
18
10 15
ÎÎ
Î
Unit
Î
Î
Î
Î
pF pF
Î
ns
ns
ns
ns
ns
NOTE:For propagation delays with loads other than 50 pF , and information on typical parametric values, see Chapter 2 of the Motorola High–
Speed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
C
PD
*Used to determine the no–load dynamic power consumption: PD = CPD V
Motorola High–Speed CMOS Data Book (DL129/D).
Power Dissipation Capacitance (Per Enabled Output)*
48
2
f + ICC VCC. For load considerations, see Chapter 2 of the
CC
pF
TIMING REQUIREMENTS (V
Symbol
t
t
tr, t
Minimum Setup Time, Input D to Latch Enable
su t
Minimum Hold Time, Latch Enable to Input D
h
Minimum Pulse Width, Latch Enable
w
Maximum Input Rise and Fall Times
f
= 5.0 V ± 10%, CL = 50 pF, Input tr = tf = 6.0 ns)
CC
Parameter
Fig.
4 4 2 1
– 55 to 25_C
Min
Max
10
5.0 15
500
Guaranteed Limit
v
85_C
Min
Max
13
5.0 19
500
v
Min
15
5.0 22
125_C
Max
500
Unit
ns ns ns ns
High–Speed CMOS Logic Data DL129 — Rev 6
3 MOTOROLA
Page 4
MC74HCT573A
t
r
INPUT D
t
PLH
Q
t
TLH
SWITCHING WAVEFORMS
t
2.7 V
1.3 V
0.3 V
90%
1.3 V
10%
f
t
PHL
t
THL
3.0 V
GND
Figure 1. Figure 2.
LATCH
ENABLE
Q
1.3 V
1.3 V
t
w
t
PLH
t
PHL
3.0 V
GND
OUTPUT ENABLE
DEVICE UNDER
TEST
1.3 V t
PZLtPLZ
Q
Q
1.3 V t
PZHtPHZ
1.3 V
Figure 3. Figure 4.
TEST POINT
OUTPUT
DEVICE UNDER
TEST
*Includes all probe and jig capacitance
CL*
Figure 5. T est Circuit
TEST POINT
OUTPUT
1 k
CL*
CONNECT TO VCC WHEN TESTING t CONNECT TO GND WHEN TESTING t
10%
90%
PLZ
PHZ
3.0 V
GND HIGH
IMPEDANCE V
OL
V
OH
HIGH IMPEDANCE
AND t
PZL
AND t
PZH
INPUT D
LATCH
ENABLE
1.3 V
t
SU
VALID
1.3 V
t
h
3.0 V GND
3.0 V GND
EXPANDED LOGIC DIAGRAM
2
D0
3
D1
4
D2
5
D3
6
D4
7
D5
8
.
.
D6
D7
9
D LE
D LE
D LE
D LE
D LE
D LE
D LE
D LE
Q
Q
Q
Q
Q
Q
Q
Q
19
18
17
16
15
14
13
12
Q0
Q1
Q2
Q3
Q4
Q5
Q6
Q7
*Includes all probe and jig capacitance
Figure 6. T est Circuit
MOTOROLA High–Speed CMOS Logic Data
4
LATCH ENABLE
OUTPUT ENABLE
11
1
DL129 — Rev 6
Page 5
–T–
SEATING PLANE
20
1
–A–
20
1
E
FG
–A–
D20X
0.010 (0.25) B
18X
M
G
MC74HCT573A
OUTLINE DIMENSIONS
N SUFFIX
PLASTIC PACKAGE
CASE 738–03
M
C
ISSUE E
M
A
L
J 20 PL
0.25 (0.010) T
M
M
11
10
N
D
20 PL
0.25 (0.010) T
B
K
DW SUFFIX
PLASTIC SOIC PACKAGE
CASE 751D–04
11
–B–
P10X
0.010 (0.25)
10
S
A
T
S
C
SEATING
–T–
PLANE
K
M
J
F
ISSUE E
M
B
M
R
X 45
_
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD FLASH.
DIM MIN MAX MIN MAX
A 25.66 27.171.010 1.070 B 6.10 6.600.240 0.260 C 3.81 4.570.150 0.180 D 0.39 0.550.015 0.022 E F G 2.54 BSC0.100 BSC J 0.21 0.380.008 0.015 K 2.80 3.550.110 0.140 L 7.62 BSC0.300 BSC
M
B
NOTES:
M 0 15 0 15 N 0.51 1.010.020 0.040
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.150 (0.006) PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.13 (0.005) TOTAL IN EXCESS OF D DIMENSION AT MAXIMUM MATERIAL CONDITION.
DIM MIN MAX MIN MAX
A 12.65 12.95 0.499 0.510 B 7.40 7.60 0.292 0.299 C 2.35 2.65 0.093 0.104 D 0.35 0.49 0.014 0.019 F 0.50 0.90 0.020 0.035 G 1.27 BSC 0.050 BSC J 0.25 0.32 0.010 0.012 K 0.10 0.25 0.004 0.009
M 0 7 0 7
__
P 10.05 10.55 0.395 0.415 R 0.25 0.75 0.010 0.029
MILLIMETERSINCHES
1.27 BSC0.050 BSC
1.27 1.770.050 0.070
INCHESMILLIMETERS
__
____
High–Speed CMOS Logic Data DL129 — Rev 6
5 MOTOROLA
Page 6
MC74HCT573A
2X
L
–T–
S
U0.15 (0.006) T
L/2
PIN 1 IDENT
S
U0.15 (0.006) T
C
0.100 (0.004)
SEATING PLANE
OUTLINE DIMENSIONS
DT SUFFIX
PLASTIC TSSOP PACKAGE
CASE 948E–02
ISSUE A
20X REFK
0.10 (0.004) V
110
M
A
–V–
D
G
H
S
U
T
S
K
1120
B
JJ1
K1
–U–
SECTION N–N
N
0.25 (0.010)
N
F
DETAIL E
DETAIL E
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE –W–.
INCHES
6.60 0.260
–W–
MILLIMETERS
DIMAMIN MAX MIN MAX
6.40 0.252
B 4.30 4.50 0.169 0.177 C 1.20 0.047
––– –––
D 0.05 0.15 0.002 0.006 F 0.50 0.75 0.020 0.030
G 0.65 BSC 0.026 BSC
H 0.27 0.37 0.011 0.015 J 0.09 0.20 0.004 0.008
J1 0.09 0.16 0.004 0.006
K 0.19 0.30 0.007 0.012
K1 0.19 0.25 0.007 0.010
L 6.40 BSC 0.252 BSC
M 0 8 0 8
____
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MOTOROLA High–Speed CMOS Logic Data
6
*MC74HCT573A/D*
MC74HCT573A/D
DL129 — Rev 6
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