The MC14042B Quad Transparent Latch is constructed with MOS
P–channel and N–channel enhancement mode devices in a single
monolithic structure. Each latch has a separate data input, but all four
latches share a common clock. The clock polarity (high or low) used to
strobe data through the latches can be reversed using the polarity
input. Information present at the data input is transferred to outputs Q
and Q
during the clock level which is determined by the polarity input.
When the polarity input is in the logic “0” state, data is transferred
during the low clock level, and when the polarity input is in the logic
“1” state the transfer occurs during the high clock level.
• Buffered Data Inputs
• Common Clock
• Clock Polarity Control
• Q and Q Outputs
• Double Diode Input Protection
• Supply Voltage Range = 3.0 Vdc to 1 8 Vdc
• Capable of Driving T wo Low–power TTL Loads or One Low–power
Schottky TTL Load Over the Rated T emperature Range
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16
PDIP–16
P SUFFIX
CASE 648
16
SOIC–16
D SUFFIX
CASE 751B
MARKING
DIAGRAMS
MC14042BCP
AWLYYWW
1
14042B
AWLYWW
1
MAXIMUM RATINGS (Voltages Referenced to V
Symbol
V
DD
Vin, V
Iin, I
P
T
T
stg
T
2. Maximum Ratings are those values beyond which damage to the device
may occur.
3. Temperature Derating:
Plastic “P and D/DW” Packages: – 7.0 mW/_C From 65_C To 125_C
This device contains protection circuitry to guard against damage due to high
static voltages or electric fields. However, precautions must be taken to avoid
applications of any voltage higher than maximum rated voltages to this
high–impedance circuit. For proper operation, V
to the range V
Unused inputs must always be tied to an appropriate logic voltage level (e.g.,
either V
DC Supply Voltage Range–0.5 to +18.0V
Input or Output Voltage Range
out
Input or Output Current
out
Power Dissipation,
D
Ambient Temperature Range–55 to +125°C
A
Storage Temperature Range–65 to +150°C
Lead Temperature
L
SS
or VDD). Unused outputs must be left open.
SS
ParameterValueUnit
(DC or Transient)
(DC or Transient) per Pin
per Package (Note 3.)
(8–Second Soldering)
v (Vin or V
) v VDD.
out
) (Note 2.)
SS
–0.5 to VDD + 0.5V
±10mA
500mW
260°C
and V
in
should be constrained
out
16
SOEIAJ–16
F SUFFIX
CASE 966
A= Assembly Location
WL or L = Wafer Lot
YY or Y = Year
WW or W = Work Week
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS D AND E DO NOT INCLUDE
MOLD FLASH OR PROTRUSIONS AND ARE
Q
1
c
MEASURED AT THE PARTING LINE. MOLD FLASH
OR PROTRUSIONS SHALL NOT EXCEED 0.15
(0.006) PER SIDE.
4. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
5. THE LEAD WIDTH DIMENSION (b) DOES NOT
INCLUDE DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.08 (0.003)
TOTAL IN EXCESS OF THE LEAD WIDTH
DIMENSION AT MAXIMUM MATERIAL CONDITION.
DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OR THE FOOT. MINIMUM SPACE
BETWEEN PROTRUSIONS AND ADJACENT LEAD
TO BE 0.46 ( 0.018).
MILLIMETERS
DIM MINMAXMINMAX
–––2.05––– 0.081
A
A
0.050.20 0.0020.008
1
0.350.50 0.0140.020
b
0.180.27 0.0070.011
c
9.90 10.500.390 0.413
D
5.105.45 0.2010.215
E
1.27 BSC0.050 BSC
e
H
7.408.20 0.2910.323
E
0.500.85 0.0200.033
L
L
1.101.500.043 0.059
E
0
M
_
Q
0.700.90 0.0280.035
1
–––0.78––– 0.031
Z
INCHES
10
_
10
0
_
_
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Page 8
MC14042B
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MC14042B/D
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