Datasheet MC14016BDR2, MC14016BF, MC14016BFEL, MC14016BCP, MC14016BD Datasheet (MOTOROLA)

Page 1
MC14016B
Quad Analog Switch/ Quad Multiplexer
The MC14016B quad bilateral switch is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. Each MC14016B consists of four independent switches capable of controlling either digital or analog signals. The quad bilateral switch is used in signal gating, chopper, modulator, demodulator and CMOS logic implementation.
Diode Protection on All Inputs
Supply Voltage Range = 3.0 Vdc to 18 Vdc
Linearized Transfer Characteristics
Low Noise — 12 nV/Cycle, f 1.0 kHz typical
Pin–for–Pin Replacements for CD4016B, CD4066B (Note improved
transfer characteristic design causes more parasitic coupling capacitance than CD4016)
For Lower R
The MC14066B
This Device Has Inputs and Outputs Which Do Not Have ESD
Protection. Antistatic Precautions Must Be T aken.
MAXIMUM RATINGS (Voltages Referenced to V
Symbol Parameter Value Unit
V
DD
Vin, V
out
I
in
I
SW
P
D
T
A
T
stg
T
L
2. Maximum Ratings are those values beyond which damage to the device
may occur.
3. Temperature Derating:
Plastic “P and D/DW” Packages: – 7.0 mW/_C From 65_C To 125_C
This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high–impedance circuit. For proper operation, Vin and V to the range V
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either V
or VDD). Unused outputs must be left open.
SS
, Use The HC4016 High–Speed CMOS Device or
ON
) (Note 2.)
SS
DC Supply Voltage Range –0.5 to +18.0 V Input or Output Voltage Range
(DC or Transient)
Input Current (DC or Transient)
per Control Pin Switch Through Current ±25 mA Power Dissipation,
per Package (Note 3.) Ambient Temperature Range –55 to +125 °C Storage Temperature Range –65 to +150 °C Lead Temperature
(8–Second Soldering)
v (Vin or V
SS
) v VDD.
out
–0.5 to VDD + 0.5 V
±10 mA
500 mW
260 °C
should be constrained
out
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MARKING
DIAGRAMS
14
PDIP–14
P SUFFIX
CASE 646
SOIC–14
D SUFFIX
CASE 751A
SOEIAJ–14
F SUFFIX
CASE 965
A = Assembly Location WL or L = Wafer Lot YY or Y = Year WW or W = Work Week
MC14016BCP
AWLYYWW
1
14
14016B
AWLYWW
1
14
MC14016B
AWLYWW
1
ORDERING INFORMATION
Device Package Shipping
MC14016BCP PDIP–14 2000/Box MC14016BD SOIC–14 MC14016BDR2 SOIC–14 2500/Tape & Reel MC14016BF SOEIAJ–14 MC14016BFEL SOEIAJ–14 See Note 1.
1. For ordering information on the EIAJ version of the SOIC packages, please contact your local ON Semiconductor representative.
55/Rail
See Note 1.
Semiconductor Components Industries, LLC, 2000
March, 2000 – Rev . 3
1 Publication Order Number:
MC14016B/D
Page 2
MC14016B
PIN ASSIGNMENT
IN 1 OUT 1 OUT 2
IN 2
CONTROL 2 CONTROL 3
V
SS
BLOCK DIAGRAM
CONTROL 1
IN 1
CONTROL 2
IN 2
CONTROL 3
IN 3
CONTROL 4
IN 4
1 2 3 4
6 7
14 13 12 11 105
9 8
V
DD
CONTROL 1 CONTROL 4 IN 4 OUT 4 OUT 3
IN 3
13
2
1
OUT 1
5
3
4
OUT 2
6
9
8
OUT 3
12
10
11
OUT 4
V
= PIN 14
DD
V
= PIN 7
SS
Control Switch
0 = V
SS
1 = V
DD
LOGIC DIAGRAM
(1/4 OF DEVICE SHOWN)
CONTROL
LOGIC DIAGRAM RESTRICTIONS
V
Vin V
SS
VSS V
DD
V
out
DD
Off On
OUT
IN
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2
Page 3
MC14016B
ÎÎÎÎ
V
DD
ÎÎ
Î
Î
Î
Î
ÎÎ
ÎÎ
Î
Î
Î
Î
Î
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Î
Î
ÎÎ
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ELECTRICAL CHARACTERISTICS (Voltages Referenced to V
Characteristic
Input Voltage
Control Input
ООООООООО
ОООООООООÎÎÎÎÎ
Input Current Control Input Capacitance
ООООООООО
Control Switch Input
ООООООООО
Switch Output
ООООООООО
Feed Through
Quiescent Current
(Per Package)
ООООООООО
“ON” Resistance
ООООООООО
(V
= VDD, RL = 10 kΩ)
C
= + 5.0 Vdc)
(V
in
ООООООООО
(V
= – 5.0 Vdc) VSS = – 5.0 Vdc
in
ООООООООО
(V
= ± 0.25 Vdc)
in
(5.)
(Vin = + 7.5 Vdc) (V
= – 7.5 Vdc) VSS = – 7.5 Vdc
in
ООООООООО
= ± 0.25 Vdc)
(V
in
(Vin = + 10 Vdc) (V
= + 0.25 Vdc) VSS = 0 Vdc
ООООООООО
in
= + 5.6 Vdc)
(V
in
(Vin = + 15 Vdc)
ООООООООО
(V
= + 0.25 Vdc) VSS = 0 Vdc
in
= + 9.3 Vdc)
(V
in
ООООООООО
“ON” Resistance
Figure
Î
Î
Î
Î
Î
Î
Î
Î
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Î
Î
1
— —
2,3
4,5,6
Symbol
V
IL
ÎÎ
V
IH
I
in
C
in
ÎÎ
ÎÎ
ÎÎ
I
DD
ÎÎ
R
ON
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
R
ON
V Vdc
5.0 10
Î
15
5.0 10
Î
15 15
Î
— —
Î
Î
5.0 10
Î
15
Î
Î
Î
5.0
7.5
10
Î
15
Î
SS
)
Min
— — —
— — —
— — — —
— — —
— — —
— — —
— — —
— — —
– 55_C
Î
Î
±0.1
Î
Î
Î
0.25
Î
Î
Î
Î
Î
Î
Î
Î
Max
— — —
— — —
— — — —
0.5
1.0
600 600 600
360 360 360
600 600 600
360 360 360
Min
— —
Î
3.0
8.0
Î
13
Î
— —
Î
Î
— —
Î
— —
Î
— —
Î
Î
— —
Î
— —
Î
— —
Î
— —
Î
25_C
(4.)
Typ
1.5
1.5
ÎÎ
1.5
2.0
6.0
ÎÎ
11
±0.00001
ÎÎ
5.0
5.0
ÎÎ
5.0
ÎÎ
0.2
0.0005
0.0010
ÎÎ
0.0015
ÎÎ
300
ÎÎ
300
ÎÎ
280 240
240
ÎÎ
180 260
310
ÎÎ
310 260
ÎÎ
260 300
ÎÎ
Max
0.9
0.9
Î
0.9 —
Î
±0.1
Î
— —
Î
Î
0.25
0.5
Î
1.0
Î
660
Î
660
Î
660 400
400
Î
400 660
660
Î
660 400
Î
400 400
Î
Min
— — —
— — —
— — — —
— — —
— — — — —
— — —
— — —
— — —
125_C
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Between any 2 circuits in a common
ООООООООО
package (V
= VDD)
C
ООООООООО
(V
= ± 5.0 Vdc, VSS = – 5.0 Vdc)
in
ООООООООО
(V
= ± 7.5 Vdc, VSS = – 7.5 Vdc)
in
Input/Output Leakage Current
(V
= VSS)
C
ООООООООО
= + 7.5, V
(V
in
(V
= – 7.5, V
ООООООООО
in
= – 7.5 Vdc)
out
= + 7.5 Vdc)
out
Î
Î
Î
Î
Î
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
5.0
7.5
7.5
7.5
Î
Î
Î
Î
Î
Î
Î
Î
Î
— —
Î
— —
±0.1 ±0.1
Î
Î
Î
Î
— —
Î
ÎÎ
ÎÎ
15
ÎÎ
10
ÎÎ
±0.0015 ±0.0015
ÎÎ
Î
Î
Î
Î
±0.1
± 0.1——
Î
Î
Î
Î
Î
Î
NOTE: All unused inputs must be returned to VDD or VSS as appropriate for the circuit application.
4. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.
5. For voltage drops across the switch (∆V current out of the switch may contain both V Maximum Ratings are exceeded. (See first page of this data sheet.) Reference Figure 14.
) > 600 mV ( > 300 mV at high temperature), excessive VDD current may be drawn; i.e., the
switch
and switch input components. The reliability of the device will be unaffected unless the
DD
Max
— — —
— — —
± 1.0
— — — —
7.5 15 30
840 840 840
520 520 520
840 840 840
520 520 520
— —
± 1.0 ± 1.0
Unit
Vdc
Î
Vdc
Î
µAdc
pF
Î
Î
Î
µAdc
Î
Ohms
Î
Î
Î
Î
Î
Î
Î
Ohms
Î
Î
Î
µAdc
Î
Î
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Page 4
MC14016B
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Î
Î
Î
Î
Î
Î
Î
Î
–50dB)
(6.)
(C
= 50 pF, TA = 25_C)
L
Figure
10,11
12,13
Symbol
Î
Î
Î
Î
Î
Î
Î
Î
7
Î
8
Î
Î
9
Î
t
PLH
t
t
PHZ
t
PLZ
t
PZH
t
PHL
PZL
,
,
,
,
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
Î
Î
ÎÎ
ÎÎ
Î
ÎÎÎÎÎÎ
Î
Î
12
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
BW
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
V
DD
Vdc
5.0 10 15
5.0 10 15
5.0 10 15
5.0
5.0 10 15
5.0 10 15
5.0
5.0
5.0
5.0
Min
Î
— — —
Î
Î
— —
Î
— —
Î
— —
Î
Î
— —
Î
— —
Î
— —
Î
Î
Î
Î
Î
— —
Î
Î
Î
— —
Î
Î
Î
Î
— —
Î
Î
(7.)
Typ
ÎÎ
15
7.0
6.0
ÎÎ
34
ÎÎ
20 15
ÎÎ
30 50
ÎÎ
100
– 80
ÎÎ
ÎÎ
24 25
ÎÎ
30 12
12
ÎÎ
15
0.16
ÎÎ
ÎÎ
ÎÎ
2.3
ÎÎ
0.2
ÎÎ
0.1
0.05
ÎÎ
ÎÎ
ÎÎ
54 40
ÎÎ
38
ÎÎ
37
ÎÎ
ÎÎ
1250
140
ÎÎ
18
ÎÎ
2.0
Max
Î
45 15 12
Î
90
Î
45 35
Î
— —
Î
— —
Î
Î
— —
Î
— —
Î
— —
Î
Î
Î
Î
Î
— —
Î
Î
Î
— —
Î
Î
Î
Î
— —
Î
Î
ELECTRICAL CHARACTERISTICS
ОООООООООООООО
Propagation Delay Time (VSS = 0 Vdc)
V
to V
in
out
(VC = VDD, RL = 10 kΩ)
ОООООООООООООО
Control to Output
(V
v 10 Vdc, RL = 10 kΩ)
in
ОООООООООООООО
ОООООООООООООО
Crosstalk, Control to Output (VSS = 0 Vdc)
(V
= VDD, Rin = 10 k, R
C
ОООООООООООООО
f = 1.0 kHz)
Crosstalk between any two switches (VSS = 0 Vdc)
(R
= 1.0 kΩ, f = 1.0 MHz,
L
ОООООООООООООО
crosstalk+20log
ОООООООООООООО
Noise Voltage (VSS = 0 Vdc)
(V
= VDD, f = 100 Hz)
C
ОООООООООООООО
(VC = VDD, f = 100 kHz)
ОООООООООООООО
Second Harmonic Distortion (VSS = – 5.0 Vdc)
ОООООООООООООО
(V
= 1.77 Vdc, RMS Centered @ 0.0 Vdc,
in
= 10 k, f = 1.0 kHz)
R
L
ОООООООООООООО
Insertion Loss (VC = VDD, Vin = 1.77 Vdc,
V
= – 5.0 Vdc, RMS centered = 0.0 Vdc, f = 1.0 MHz)
SS
ОООООООООООООО
I
+
20log
loss
ОООООООООООООО
(RL = 1.0 kΩ)
ОООООООООООООО
(R
= 10 kΩ)
L
= 100 kΩ)
(R
L
ОООООООООООООО
(R
= 1.0 MΩ)
L
Bandwidth (– 3.0 dB)
(V
= VDD, Vin = 1.77 Vdc, VSS = – 5.0 Vdc,
ОООООООООООООО
C
RMS centered @ 0.0 Vdc)
ОООООООООООООО
= 1.0 kΩ)
(R
L
(R
= 10 kΩ)
ОООООООООООООО
L
(R
= 100 kΩ)
L
ОООООООООООООО
(R
= 1.0 MΩ)
L
OFF Channel Feedthrough Attenuation
(V
= – 5.0 Vdc)
SS
ОООООООООООООО
(V
= VSS, 20 log
C
ОООООООООООООО
(RL = 1.0 kΩ)
ОООООООООООООО
(R
= 10 kΩ)
L
= 100 kΩ)
(R
L
ОООООООООООООО
(R
= 1.0 MΩ)
L
Characteristic
V
10
V
V
out
)
10
V
in
V
10
V
out1 out2
out
in
= 10 kΩ,
out
)
+
6. The formulas given are for typical characteristics only at 25_C.
7. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.
Unit
ÎÎ
ns
ÎÎ
ns
ÎÎ
ÎÎ
mV
ÎÎ
dB
ÎÎ
ÎÎ
nV/Cycle
ÎÎ
ÎÎ
%
ÎÎ
ÎÎ
dB
ÎÎ
ÎÎ
ÎÎ
ÎÎ
MHz
ÎÎ
ÎÎ
ÎÎ
ÎÎ
kHz
ÎÎ
ÎÎ
ÎÎ
ÎÎ
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MC14016B
00
00
V
C
I
S
VIL: VC is raised from VSS until VC = VIL.
: at VC = VIL: IS = ±10 µA with Vin = VSS, V
V
IL
: When VC = VIH to VDD, the switch is ON and the RON specifications are met.
V
IH
V
DD
I
D
V
V
PULSE
GENERATOR
P
= VDD x I
D
TO ALL 4 CIRCUITS
f
c
D
DD
V
SS
out
CONTROL
INPUT
V
in
Figure 2. Quiescent Power Dissipation
T est Circuit
V
in
V
out
= VDD or Vin = VDD, V
out
Figure 1. Input Voltage Test Circuit
10,000
= 25°C
T
µW)
1000
A
100
10 k
, POWER DISSIPATION (P
10
D
1.0
Figure 3. T ypical Power Dissipation per Circuit
= VSS.
out
VDD = 15 Vdc
, FREQUENCY (Hz)
f
c
(1/4 of device shown)
10 Vdc
5.0 Vdc
50 M10 M1.0 M100 k10 k5.0 k
TYPICAL RON versus INPUT VOLTAGE
7
RL = 10 k T
600
= 25°C
A
500
400
VC = VDD = 5.0 Vdc V
= –5.0 Vdc
SS
300
200
, “ON” RESISTANCE (OHMS)R ON
100
0 –10 –8.0 –4.0 0 4.0 8.0 10
V
, INPUT VOLTAGE (Vdc)
in
VC = VDD = 7.5 Vdc V
= –7.5 Vdc
SS
Figure 4. VSS = – 5.0 V and – 7.5 V Figure 5. VSS = 0 V
7
VSS = 0 Vdc
600
R
L
T
A
500
400
VC = VDD = 10 Vdc
300
200
, “ON” RESISTANCE (OHMS)R
VC = VDD = 15 Vdc
ON
100
0
0 2.0 6.0 10 14 18 20
V
, INPUT VOLTAGE (Vdc)
in
= 10 k = 25°C
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Page 6
MC14016B
V
out
RLC
L
V
in
V
out
R
V
C
V
in
L
20 ns 20 ns
t
PHL
90%
50%
V
in
t
PLH
V
out
10%
50%
V
DD
V
SS
Figure 6. RON Characteristics
T est Circuit
V
out
V
C
V
in
20 ns
t
PZH
t
PZL
50%
V
C
V
out
V
out
10%
90%
90%
10%
90%
10%
t
V
PHZ
t
PLZ
R
C
L
L
X
V
DD
V
SS
Vin = V Vx = V
Vin = V Vx = V
Figure 8. T urn–On Delay Time Test Circuit
and Waveforms
Figure 7. Propagation Delay T est Circuit
and Waveforms
V
out
V
C
DD
SS
V
in
10 k 15 pF
1 k
SS
DD
Figure 9. Crosstalk T est Circuit
35 30
VDD = 15 Vdc
25
10 Vdc
5.0 Vdc
VC = V
20
15
OUT
DD
IN
QUAN–TECH
MODEL
2283
OR EQUIV
10
NOISE VOLTAGE (nV/ CYCLE)
5.0 0
f, FREQUENCY (Hz)
Figure 10. Noise V oltage Test Circuit Figure 11. Typical Noise Characteristics
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6
100 k10 k1.0k10010
Page 7
2
.0
0 –2.0 –4.0
–6.0
–8.0
TYPICAL INSERTION LOSS (dB)
–10 –12
Figure 12. T ypical Insertion Loss/Bandwidth
RL = 1 M AND 100 k
10 k
1.0 k
f
, INPUT FREQUENCY (Hz)
in
Characteristics
–3.0 dB (RL = 1.0 MΩ )
–3.0 dB (RL = 10 kΩ )
–3.0 dB (RL = 1.0 kΩ )
CONTROL
SECTION
OF IC
MC14016B
100 M10 M1.0 M100 k10 k
V
V
C
+ 2.5 Vdc
V
in
0.0 Vdc – 2.5 Vdc
Figure 13. Frequency Response T est Circuit
ON SWITCH
out
R
L
LOAD
V
SOURCE
Figure 14. ∆V Across Switch
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MC14016B
APPLICATIONS INFORMATION
Figure A illustrates use of the Analog Switch. The 0–to–5
V Digital Control signal is used to directly control a 5 V
p–p
analog signal.
The digital control logic levels are determined by V
and VSS. The VDD voltage is the logic high voltage; the V
DD
SS
voltage is logic low . For the example, VDD = +5 V logic high at the control inputs; VSS = GND = 0 V logic low.
The maximum analog signal level is determined by V
DD
and VSS. The analog voltage must not swing higher than VDD or lower than VSS.
+5 V
V
SS
SWITCH
+5 V
EXTERNAL
CMOS
DIGITAL
CIRCUITRY
5 V
p–p
ANALOG SIGNAL
0–TO–5 V DIGITAL
CONTROL SIGNALS
SWITCH
IN
V
DD
MC14016B
OUT
The example shows a 5 V
margin at either peak. If voltage transients above V
signal which allows no
p–p
DD
and/or below VSS are anticipated on the analog channels, external diodes (Dx) are recommended as shown in Figure B. These diodes should be small signal types able to absorb the maximum anticipated current surges during clipping.
The absolute maximum potential difference between
V
and VSS is 18.0 V. Most parameters are specified up to
DD
15 V which is the recommended maximum difference between VDD and VSS.
+5.0 V
5 V
p–p
ANALOG SIGNAL
+2.5 V
GND
Figure A. Application Example
V
DD
D
x
SWITCH
IN
D
x
V
SS
SWITCH
OUT
V
DD
D
D
V
SS
Figure B. External Germanium or Schottky Clipping Diodes
x
x
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MC14016B
P ACKAGE DIMENSIONS
P SUFFIX
PLASTIC DIP PACKAGE
CASE 646–06
ISSUE M
14 8
B
17
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD FLASH.
5. ROUNDED CORNERS OPTIONAL.
–T–
SEATING PLANE
N
HG
A
F
L
C
D
14 PL
0.13 (0.005)
K
J
M
M
DIM MIN MAX MIN MAX
A 0.715 0.770 18.16 18.80 B 0.240 0.260 6.10 6.60 C 0.145 0.185 3.69 4.69 D 0.015 0.021 0.38 0.53 F 0.040 0.070 1.02 1.78 G 0.100 BSC 2.54 BSC H 0.052 0.095 1.32 2.41 J 0.008 0.015 0.20 0.38 K 0.115 0.135 2.92 3.43 L
0.290 0.310 7.37 7.87
M ––– 10 ––– 10 N 0.015 0.039 0.38 1.01
MILLIMETERSINCHES
__
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–T–
SEATING PLANE
–A–
14 8
G
D 14 PL
0.25 (0.010) A
MC14016B
P ACKAGE DIMENSIONS
D SUFFIX
PLASTIC SOIC PACKAGE
CASE 751A–03
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
–B–
P
7 PL
M
71
0.25 (0.010) B
C
X 45
R
K
M
S
B
T
S
M
_
M
F
J
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION.
DIM MIN MAX MIN MAX
A 8.55 8.75 0.337 0.344 B 3.80 4.00 0.150 0.157 C 1.35 1.75 0.054 0.068 D 0.35 0.49 0.014 0.019
F 0.40 1.25 0.016 0.049
G 1.27 BSC 0.050 BSC
J 0.19 0.25 0.008 0.009 K 0.10 0.25 0.004 0.009 M 0 7 0 7
____
P 5.80 6.20 0.228 0.244 R 0.25 0.50 0.010 0.019
INCHESMILLIMETERS
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14 8
1
Z
D
e
b
0.13 (0.005)
M
E
7
A
0.10 (0.004)
H
A
1
MC14016B
P ACKAGE DIMENSIONS
F SUFFIX
PLASTIC EIAJ SOIC PACKAGE
CASE 965–01
ISSUE O
L
E
E
VIEW P
_
M
L DETAIL P
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS AND ARE
Q
1
c
MEASURED AT THE PARTING LINE. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.15 (0.006) PER SIDE.
4. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY.
5. THE LEAD WIDTH DIMENSION (b) DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE LEAD WIDTH DIMENSION AT MAXIMUM MATERIAL CONDITION. DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OR THE FOOT. MINIMUM SPACE BETWEEN PROTRUSIONS AND ADJACENT LEAD TO BE 0.46 ( 0.018).
MILLIMETERS
DIM MIN MAX MIN MAX
––– 2.05 ––– 0.081
A
A
0.05 0.20 0.002 0.008
1
0.35 0.50 0.014 0.020
b
0.18 0.27 0.007 0.011
c
9.90 10.50 0.390 0.413
D
5.10 5.45 0.201 0.215
E
1.27 BSC 0.050 BSC
e
H
7.40 8.20 0.291 0.323
E
0.50 0.85 0.020 0.033
0.50 L
1.10 1.50 0.043 0.059
E
0
M
_
Q
0.70 0.90 0.028 0.035
1
––– 1.42 ––– 0.056
Z
INCHES
10
_
10
0
_
_
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MC14016B
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MC14016B/D
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