Datasheet MC14016BD, MC14016BCL, MC14016BCP Datasheet (Motorola)

Page 1
MOTOROLA CMOS LOGIC DATA
65
MC14016B
    
The MC14016B quad bilateral switch is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. Each M C14016B c onsists o f four independent switches c apable of controlling either digital or analog signals. The quad bilateral switch is used in s ignal g ating, c hopper, modulator, demodulator and CMOS l ogic implementation.
Diode Protection on All Inputs
Supply Voltage Range = 3.0 Vdc to 18 Vdc
Linearized Transfer Characteristics
Low Noise — 12 nV/Cycle
, f 1.0 kHz typical
Pin–for–Pin Replacements for CD4016B, CD4066B (Note improved
transfer characteristic design causes more parasitic coupling capacitance than CD4016)
For Lower RON, Use The HC4016 High–Speed CMOS Device or The
MC14066B
This Device Has Inputs and Outputs Which Do Not Have ESD
Protection. Antistatic Precautions Must Be Taken.
MAXIMUM RATINGS* (Voltages Referenced to V
SS
)
Symbol
Parameter
Value
Unit
V
DD
DC Supply Voltage
– 0.5 to + 18.0
V
Vin, V
out
Input or Output Voltage (DC or Transient)
– 0.5 to VDD + 0.5
V
l
in
Input Current (DC or Transient), per Control Pin
± 10
mA
I
sw
Switch Through Current
± 25
mA
P
D
Power Dissipation, per Package†
500
mW
T
stg
Storage Temperature
– 65 to + 150
_
C
T
L
Lead Temperature (8–Second Soldering)
260
_
C
*Maximum Ratings are those values beyond which damage to the device may occur. †Temperature Derating:
Plastic “P and D/DW” Packages: – 7.0 mW/_C From 65_C To 125_C Ceramic “L” Packages: – 12 mW/_C From 100_C To 125_C
This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high-impedance circuit. For proper operation, Vin and V
out
should be constrained to the range VSS (Vin or V
out
) VDD.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either VSS or VDD). Unused outputs must be left open.

SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1995
REV 3 1/94

L SUFFIX
CERAMIC CASE 632
ORDERING INFORMATION
MC14XXXBCP Plastic MC14XXXBCL Ceramic MC14XXXBD SOIC
TA = – 55° to 125°C for all packages.
P SUFFIX
PLASTIC
CASE 646
D SUFFIX
SOIC
CASE 751A
BLOCK DIAGRAM
CONTROL 1
IN 1
CONTROL 2
IN 2
CONTROL 3
IN 3
CONTROL 4
IN 4
OUT 1
OUT 2
OUT 3
OUT 4
13
1 5
4 6
8
12
11
2
3
9
10
VDD = PIN 14
VSS = PIN 7
Control Switch
0 = V
SS
Off
1 = V
DD
On
LOGIC DIAGRAM
(1/4 OF DEVICE SHOWN)
CONTROL
OUT
IN
LOGIC DIAGRAM RESTRICTIONS
VSS
Vin ≤ V
DD
VSS
V
out
≤ V
DD
Page 2
MOTOROLA CMOS LOGIC DATAMC14016B
66
ELECTRICAL CHARACTERISTICS (Voltages Referenced to V
SS
)
V
– 55_C
25_C
125_C
Characteristic
Figure
Symbol
V
DD
Vdc
Min
Max
Min
ÎÎÎ
ÎÎÎ
ÎÎÎ
Typ #
Max
Min
Max
Unit
V
IL
5.0 10 15
— — —
— — —
— — —
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
1.5
1.5
1.5
0.9
0.9
0.9
— — —
— — —
Vdc
V
IH
5.0 10 15
— — —
— — —
3.0
8.0 13
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
2.0
6.0 11
— — —
— — —
— — —
Vdc
Input Current Control
I
in
15
±0.1
ÎÎÎ
ÎÎÎ
ÎÎÎ
±0.00001
±0.1
± 1.0
µAdc
Input Capacitance
Control Switch Input Switch Output Feed Through
C
in
— — — —
— — — —
— — — —
— — — —
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
5.0
5.0
5.0
0.2
— — — —
— — — —
— — — —
pF
Quiescent Current
(Per Package)
2,3
I
DD
5.0 10 15
— — —
0.25
0.5
1.0
— — —
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
0.0005
0.0010
0.0015
0.25
0.5
1.0
— — —
7.5 15 30
µAdc
“ON” Resistance (VC = VDD, RL = 10 k)
(Vin = + 5.0 Vdc) (Vin = – 5.0 Vdc) VSS = – 5.0 Vdc (Vin = ± 0.25 Vdc)
4,5,6
R
ON
5.0
— — —
600 600 600
— — — — —
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
300 300 280
660 660 660
— — — — —
840 840 840
Ohms
(Vin = + 7.5 Vdc) (Vin = – 7.5 Vdc) VSS = – 7.5 Vdc (Vin = ± 0.25 Vdc)
7.5
— — —
360 360 360
— — —
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
240 240 180
400 400 400
— — —
520 520 520
(Vin = + 10 Vdc) (Vin = + 0.25 Vdc) VSS = 0 Vdc (Vin = + 5.6 Vdc)
10
— — —
600 600 600
— — —
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
260 310 310
660 660 660
— — —
840 840 840
(Vin = + 15 Vdc) (Vin = + 0.25 Vdc) VSS = 0 Vdc (Vin = + 9.3 Vdc)
15
— — —
360 360 360
— — —
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
260 260 300
400 400 400
— — —
520 520 520
“ON” Resistance
Between any 2 circuits in a common package (VC = VDD) (Vin = ± 5.0 Vdc, VSS = – 5.0 Vdc) (Vin = ± 7.5 Vdc, VSS = – 7.5 Vdc)
R
ON
5.0
7.5——
— —
— —
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
15 10
— —
— —
— —
Ohms
Input/Output Leakage Current
(VC = VSS) (Vin = + 7.5, V
out
= – 7.5 Vdc)
(Vin = – 7.5, V
out
= + 7.5 Vdc)
7.5
7.5——
±0.1 ±0.1——
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
±0.0015 ±0.0015
±0.1
± 0.1——
± 1.0 ± 1.0
µAdc
NOTE: All unused inputs must be returned to VDD or VSS as appropriate for the circuit application. #Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.
**For voltage drops across the switch (V
switch
) > 600 mV ( > 300 mV at high temperature), excessive VDD current may be drawn; i.e., the current out of the switch may contain both VDD and switch input components. The reliability of the device will be unaffected unless the Maximum Ratings are exceeded. (See first page of this data sheet.) Reference Figure 14.
Input Voltage
Control Input
1
Page 3
MOTOROLA CMOS LOGIC DATA
67
MC14016B
ELECTRICAL CHARACTERISTICS* (C
L
= 50 pF, TA = 25_C)
Characteristic
Figure
Symbol
V
DD
Vdc
Min
Typ #
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Max
Unit
7
t
PLH
,
t
PHL
5.0 10 15
— — —
15
7.0
6.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
45 15 12
ns
v
10 Vdc, RL = 10 k)
8
t
PHZ
,
t
PLZ
,
t
PZH
,
t
PZL
5.0 10 15
— — —
34 20 15
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
90 45 35
ns
Crosstalk, Control to Output (VSS = 0 Vdc)
(VC = VDD, Rin = 10 k, R
out
= 10 k,
f = 1.0 kHz)
9
5.0 10 15
— — —
30 50
100
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
— — —
mV
Crosstalk between any two switches (VSS = 0 Vdc)
(RL = 1.0 k, f = 1.0 MHz,
crosstalk+20log
10
V
out1
V
out2
)
5.0
– 80
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
dB
Noise Voltage (VSS = 0 Vdc)
(VC = VDD, f = 100 Hz)
10,11
5.0 10 15
— — —
24 25 30
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
— — —
nV/Cycle
(VC = VDD, f = 100 kHz)
5.0 10 15
— — —
12 12 15
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
— — —
Second Harmonic Distortion (VSS = – 5.0 Vdc)
(Vin = 1.77 Vdc, RMS Centered @ 0.0 Vdc, RL = 10 k, f = 1.0 kHz)
5.0
0.16
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
%
Insertion Loss (VC = VDD, Vin = 1.77 Vdc,
VSS = – 5.0 Vdc, RMS centered = 0.0 Vdc, f = 1.0 MHz) I
loss
+
20log
10
V
out
V
in
)
(RL = 1.0 k) (RL = 10 k) (RL = 100 k) (RL = 1.0 M)
12
5.0
— — — —
2.3
0.2
0.1
0.05
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
— — — —
dB
Bandwidth (– 3.0 dB)
(VC = VDD, Vin = 1.77 Vdc, VSS = – 5.0 Vdc, RMS centered @ 0.0 Vdc) (RL = 1.0 k) (RL = 10 k) (RL = 100 k) (RL = 1.0 M)
12,13
BW
5.0
— — — —
54 40 38 37
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
— — — —
MHz
OFF Channel Feedthrough Attenuation
(VSS = – 5.0 Vdc)
V
out
V
in
+
–50dB)
(RL = 1.0 k) (RL = 10 k) (RL = 100 k) (RL = 1.0 M)
(VC = VSS, 20 log
10
5.0
— — — —
1250
140
18
2.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
— — — —
kHz
#Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.
PIN ASSIGNMENT
11
12
13
14
8
9
105
4
3
2
1
7
6
OUT 4
IN 4
CONTROL 4
CONTROL 1
V
DD
IN 3
OUT 3
IN 2
OUT 2
OUT 1
IN 1
V
SS
CONTROL 3
CONTROL 2
Propagation Delay Time (VSS = 0 Vdc)
Vin to V
out
(VC = VDD, RL = 10 k)
Control to Output
(Vin
Page 4
MOTOROLA CMOS LOGIC DATAMC14016B
68
Figure 1. Input Voltage Test Circuit
V
C
V
in
V
out
I
S
VIL: VC is raised from VSS until VC = VIL.
VIL: at VC = VIL: IS = ±10 µA with Vin = VSS, V
out
= VDD or Vin = VDD, V
out
= VSS.
VIH: When VC = VIH to VDD, the switch is ON and the RON specifications are met.
Figure 2. Quiescent Power Dissipation
Test Circuit
Figure 3. Typical Power Dissipation per Circuit
(1/4 of device shown)
PULSE
GENERATOR
V
DD
10 k
I
D
V
DDVout
V
SS
V
in
f
c
TO ALL 4 CIRCUITS
PD = VDD x I
D
50 M10 M1.0 M100 k10 k5.0 k
10,000
1000
100
10
1.0
TA = 25
°
C
10 Vdc
5.0 Vdc
fc, FREQUENCY (Hz)
, POWER DISSIPATION (P
D
µ
W)
CONTROL
INPUT
VDD = 15 Vdc
TYPICAL RON versus INPUT VOLTAGE
Figure 4. VSS = – 5.0 V and – 7.5 V Figure 5. VSS = 0 V
, “ON” RESISTANCE (OHMS)R
ON
700 600
500
400
300
200
100
0 –10 –8.0 –4.0 0 4.0 8.0 10
Vin, INPUT VOLTAGE (Vdc)
, “ON” RESISTANCE (OHMS)R
ON
700 600
500
400
300
200
100
0
0 2.0 6.0 10 14 18 20
Vin, INPUT VOLTAGE (Vdc)
RL = 10 k
TA = 25°C
VC = VDD = 5.0 Vdc VSS = –5.0 Vdc
VC = VDD = 7.5 Vdc VSS = –7.5 Vdc
VSS = 0 Vdc RL = 10 k
TA = 25°C
VC = VDD = 10 Vdc
VC = VDD = 15 Vdc
Page 5
MOTOROLA CMOS LOGIC DATA
69
MC14016B
Figure 6. RON Characteristics
Test Circuit
Figure 7. Propagation Delay Test Circuit
and Waveforms
V
C
V
in
V
out
R
L
V
out
V
in
RLC
L
20 ns 20 ns
V
DD
V
SS
V
in
V
out
t
PLH
t
PHL
50%
10%
50%
90%
Figure 8. Turn–On Delay Time Test Circuit
and Waveforms
Figure 9. Crosstalk Test Circuit
V
C
V
out
V
in
R
L
C
L
V
X
20 ns
V
C
V
out
V
out
10%
90%
10%
90%
90%
50%
10%
t
PZH
t
PHZ
V
DD
V
SS
t
PLZ
t
PZL
Vin = V
DD
Vx = V
SS
Vin = V
SS
Vx = V
DD
V
C
V
out
V
in
1 k
10 k 15 pF
Figure 10. Noise Voltage Test Circuit Figure 11. Typical Noise Characteristics
VC = V
DD
OUT
IN
QUAN–TECH
MODEL
2283
OR EQUIV
100 k10 k1.0k10010
35 30
25
20
0
10 Vdc
5.0 Vdc
f, FREQUENCY (Hz)
NOISE VOLTAGE (nV/ CYCLE)
15
10
5.0
VDD = 15 Vdc
Page 6
MOTOROLA CMOS LOGIC DATAMC14016B
70
Figure 12. Typical Insertion Loss/Bandwidth
Characteristics
Figure 13. Frequency Response Test Circuit
V
C
V
out
R
L
V
in
+ 2.5 Vdc
0.0 Vdc – 2.5 Vdc
100 M10 M1.0 M100 k10 k
2.0
0
–2.0
RL = 1 MΩ AND 100 k
fin, INPUT FREQUENCY (Hz)
–4.0
–6.0
–8.0
–10 –12
TYPICAL INSERTION LOSS (dB)
10 k
1.0 k
–3.0 dB (RL = 1.0 MΩ )
–3.0 dB (RL = 10 kΩ )
–3.0 dB (RL = 1.0 kΩ )
Figure 14. V Across Switch
CONTROL
SECTION
OF IC
SOURCE
V
LOAD
ON SWITCH
Page 7
MOTOROLA CMOS LOGIC DATA
71
MC14016B
APPLICATIONS INFORMATION
Figure A illustrates use of the Analog Switch. The 0–to–5 V
Digital Control signal is used to directly control a 5 V
p–p
ana-
log signal.
The digital control logic levels are determined by VDD and VSS. The VDD voltage is the logic high voltage; the VSS volt­age is logic low. For the example, VDD = +5 V logic high at the control inputs; VSS = GND = 0 V logic low.
The maximum analog signal level is determined by V
DD
and VSS. The analog voltage must not swing higher than VDD or lower than VSS.
The example shows a 5 V
p–p
signal which allows no margin at either peak. If voltage transients above VDD and/or below VSS are anticipated on the analog channels, external diodes (Dx) are recommended as shown in Figure B. These diodes should be small signal types able to a bsorb t he maximum anticipated current surges during clipping.
The
absolute
maximum potential difference between V
DD
and VSS is 18.0 V . Most parameters are specified up to 15 V which is t he
recommended
maximum d ifference between
VDD and VSS.
Figure A. Application Example
+5 V
V
DD
V
SS
SWITCH
IN
SWITCH
OUT
5 V
p–p
ANALOG SIGNAL
0–TO–5 V DIGITAL
CONTROL SIGNALS
+5 V
EXTERNAL
CMOS
DIGITAL
CIRCUITRY
5 V
p–p
ANALOG SIGNAL
MC14016B
+5.0 V
+2.5 V
GND
Figure B. External Germanium or Schottky Clipping Diodes
V
DD
V
DD
D
x
D
x
D
x
D
x
V
SS
V
SS
SWITCH
IN
SWITCH
OUT
Page 8
MOTOROLA CMOS LOGIC DATAMC14016B
72
OUTLINE DIMENSIONS
L SUFFIX
CERAMIC DIP PACKAGE
CASE 632–08
ISSUE Y
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.750 0.785 19.05 19.94 B 0.245 0.280 6.23 7.11 C 0.155 0.200 3.94 5.08 D 0.015 0.020 0.39 0.50 F 0.055 0.065 1.40 1.65 G 0.100 BSC 2.54 BSC J 0.008 0.015 0.21 0.38 K 0.125 0.170 3.18 4.31 L 0.300 BSC 7.62 BSC M 0 15 0 15 N 0.020 0.040 0.51 1.01
____
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL.
4. DIMENSION F MAY NARROW TO 0.76 (0.030) WHERE THE LEAD ENTERS THE CERAMIC BODY.
–A–
–B–
C
14 PLD
GF N
K
14 PLJ
M
L
S
B
M
0.25 (0.010) T
S
A
M
0.25 (0.010) T
–T–
SEATING PLANE
1 7
14 9
P SUFFIX
PLASTIC DIP PACKAGE
CASE 646–06
ISSUE L
NOTES:
1. LEADS WITHIN 0.13 (0.005) RADIUS OF TRUE POSITION AT SEATING PLANE AT MAXIMUM MATERIAL CONDITION.
2. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL.
3. DIMENSION B DOES NOT INCLUDE MOLD FLASH.
4. ROUNDED CORNERS OPTIONAL.
1 7
14 8
B
A
F
H G D
K
C
N
L
J
M
SEATING PLANE
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.715 0.770 18.16 19.56 B 0.240 0.260 6.10 6.60 C 0.145 0.185 3.69 4.69 D 0.015 0.021 0.38 0.53 F 0.040 0.070 1.02 1.78 G 0.100 BSC 2.54 BSC H 0.052 0.095 1.32 2.41 J 0.008 0.015 0.20 0.38 K 0.115 0.135 2.92 3.43 L 0.300 BSC 7.62 BSC M 0 10 0 10 N 0.015 0.039 0.39 1.01
_ _ _ _
Page 9
MOTOROLA CMOS LOGIC DATA
73
MC14016B
OUTLINE DIMENSIONS
D SUFFIX
PLASTIC SOIC PACKAGE
CASE 751A–03
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION.
–A–
–B–
G
P
7 PL
14 8
71
M
0.25 (0.010) B
M
S
B
M
0.25 (0.010) A
S
T
–T–
F
R
X 45
SEATING PLANE
D 14 PL
K
C
J
M
_
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A 8.55 8.75 0.337 0.344 B 3.80 4.00 0.150 0.157 C 1.35 1.75 0.054 0.068 D 0.35 0.49 0.014 0.019 F 0.40 1.25 0.016 0.049 G 1.27 BSC 0.050 BSC J 0.19 0.25 0.008 0.009 K 0.10 0.25 0.004 0.009 M 0 7 0 7 P 5.80 6.20 0.228 0.244 R 0.25 0.50 0.010 0.019
_ _ _ _
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MC14016B/D
*MC14016B/D*
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