Datasheet MC14015BFEL, MC14015BFL1, MC14015BFL2, MC14015BFR1, MC14015BCP Datasheet (MOTOROLA)

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Page 1
Semiconductor Components Industries, LLC, 2000
March, 2000 – Rev. 3
1 Publication Order Number:
MC14015B/D
MC14015B
Dual 4-Bit Static Shift Register
The MC14015B dual 4–bit static shift register is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. It consists of two identical, independent 4–state serial–input/parallel–output registers. Each register has independent Clock and Reset inputs with a single serial Data input. The register states are type D master–slave flip–flops. Data is shifted from one stage to the next during the positive–going clock transition. Each register can be cleared when a high level is applied on the Reset line. These complementary MOS shift registers find primary use in buffer storage and serial–to–parallel conversion where low power dissipation and/or noise immunity is desired.
Diode Protection on All Inputs
Supply Voltage Range = 3.0 Vdc to 18 Vdc
Logic Edge–Clocked Flip–Flop Design —
Logic state is retained indefinitely with clock level either high or low; information is transferred to the output only on the positive going edge of the clock pulse.
Capable of Driving Two Low–power TTL Loads or One Low–power
Schottky TTL Load Over the Rated Temperature Range.
MAXIMUM RATINGS (Voltages Referenced to V
SS
) (Note 2.)
Symbol Parameter Value Unit
V
DD
DC Supply Voltage Range –0.5 to +18.0 V
Vin, V
out
Input or Output Voltage Range
(DC or Transient)
–0.5 to VDD + 0.5 V
Iin, I
out
Input or Output Current
(DC or Transient) per Pin
±10 mA
P
D
Power Dissipation,
per Package (Note 3.)
500 mW
T
A
Ambient Temperature Range –55 to +125 °C
T
stg
Storage Temperature Range –65 to +150 °C
T
L
Lead Temperature
(8–Second Soldering)
260 °C
2. Maximum Ratings are those values beyond which damage to the device
may occur.
3. Temperature Derating:
Plastic “P and D/DW” Packages: – 7.0 mW/_C From 65_C T o 125_C
This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high–impedance circuit. For proper operation, V
in
and V
out
should be constrained
to the range V
SS
v (Vin or V
out
) v VDD.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either V
SS
or VDD). Unused outputs must be left open.
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A = Assembly Location WL or L = Wafer Lot YY or Y = Year WW or W = Work Week
Device Package Shipping
ORDERING INFORMATION
MC14015BCP PDIP–16 2000/Box MC14015BD SOIC–16 48/Rail MC14015BDR2 SOIC–16 2500/Tape & Reel
1. For ordering information on the EIAJ version of the SOIC packages, please contact your local ON Semiconductor representative.
MARKING
DIAGRAMS
1
16
PDIP–16
P SUFFIX
CASE 648
MC14015BCP
AWLYYWW
SOIC–16
D SUFFIX
CASE 751B
1
16
14015B
AWLYWW
SOEIAJ–16
F SUFFIX
CASE 966
1
16
MC14015B
AWLYWW
TSSOP–16 DT SUFFIX
CASE 948F
14
015B
ALYW
1
16
MC14015BDT TSSOP–16 2000/Tape & Reel MC14015BF SOEIAJ–16 See Note 1. MC14015BFEL SOEIAJ–16 See Note 1.
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MC14015B
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2
TRUTH TABLE
C D R Q0 Q
n
0 0 0 Q
n–1
1 0 1 Q
n–1
X 0 No Change No Change
X X 1 0 0
X = Don’t Care Q
n
= Q0, Q1, Q2, or Q3, as applicable.
Q
n–1
= Output of prior stage.
BLOCK DIAGRAM
14
1
15
6
9
7
5 4 3 10
13 12 11 2
Q0 Q1 Q2 Q3
Q0 Q1 Q2 Q3
D
C
R
R
D
C
V
DD
= PIN 16
V
SS
= PIN 8
PIN ASSIGNMENT
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
Q1
B
Q0
B
R
B
D
B
V
DD
C
A
Q3
A
Q2
B
Q1
A
Q2
A
Q3
B
C
B
V
SS
D
A
R
A
Q0
A
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ELECTRICAL CHARACTERISTICS (Voltages Referenced to V
SS
)
V
– 55_C
25_C
125_C
Characteristic
Symbol
V
DD
Vdc
Min
Max
Min
Typ
(4.)
Max
Min
Max
Unit
ОООООООО
Î
Output Voltage “0” Level
V
in
= VDD or 0
ÎÎ
Î
V
OL
Î
Î
5.0 10 15
Î
Î
— — —
Î
Î
0.05
0.05
0.05
ÎÎ
Î
— — —
Î
Î
0 0 0
ÎÎ
Î
0.05
0.05
0.05
Î
Î
— — —
Î
Î
0.05
0.05
0.05
Î
Î
Vdc
ОООООООО
Î
Vin = 0 or V
DD
“1” Level
ÎÎ
Î
V
OH
Î
Î
5.0 10 15
Î
Î
4.95
9.95
14.95
Î
Î
— — —
ÎÎ
Î
4.95
9.95
14.95
Î
Î
5.0 10 15
ÎÎ
Î
— — —
Î
Î
4.95
9.95
14.95
Î
Î
— — —
Î
Î
Vdc
ОООООООО
Î
ОООООООО
Î
Input Voltage “0” Level
(V
O
= 4.5 or .05 Vdc)
(V
O
= 9.0 or 1.0 Vdc)
(V
O
= 13.5 or 1.5 Vdc)
ÎÎ
Î
ÎÎ
Î
V
IL
Î
Î
Î
Î
5.0 10 15
Î
Î
Î
Î
— — —
Î
Î
Î
Î
1.5
3.0
4.0
ÎÎ
Î
ÎÎ
Î
— — —
Î
Î
Î
Î
2.25
4.50
6.75
ÎÎ
Î
ÎÎ
Î
1.5
3.0
4.0
Î
Î
Î
Î
— — —
Î
Î
Î
Î
1.5
3.0
4.0
Î
Î
Î
Î
Vdc
ОООООООО
Î
ОООООООО
Î
(VO = 0.5 or 4.5 Vdc) “1” Level (V
O
= 1.0 or 9.0 Vdc)
(V
O
= 1.5 or 13.5 Vdc)
ÎÎ
Î
ÎÎ
Î
V
IH
Î
Î
Î
Î
5.0 10 15
Î
Î
Î
Î
3.5
7.0 11
Î
Î
Î
Î
— — —
ÎÎ
Î
ÎÎ
Î
3.5
7.0 11
Î
Î
Î
Î
2.75
5.50
8.25
ÎÎ
Î
ÎÎ
Î
— — —
Î
Î
Î
Î
3.5
7.0 11
Î
Î
Î
Î
— — —
Î
Î
Î
Î
Vdc
ОООООООО
Î
ОООООООО
Î
Output Drive Current
(V
OH
= 2.5 Vdc) Source
(V
OH
= 4.6 Vdc)
(V
OH
= 9.5 Vdc)
(V
OH
= 13.5 Vdc)
ÎÎ
Î
ÎÎ
Î
I
OH
Î
Î
Î
Î
5.0
5.0 10 15
Î
Î
Î
Î
– 3.0
– 0.64
– 1.6 – 4.2
Î
Î
Î
Î
— — — —
ÎÎ
Î
ÎÎ
Î
– 2.4
– 0.51
– 1.3 – 3.4
Î
Î
Î
Î
– 4.2 – 0.88 – 2.25
– 8.8
ÎÎ
Î
ÎÎ
Î
— — — —
Î
Î
Î
Î
– 1.7
– 0.36
– 0.9 – 2.4
Î
Î
Î
Î
— — — —
Î
Î
Î
Î
mAdc
ОООООООО
Î
ОООООООО
Î
(VOL = 0.4 Vdc) Sink (V
OL
= 0.5 Vdc)
(V
OL
= 1.5 Vdc)
ÎÎ
Î
ÎÎ
Î
I
OL
Î
Î
Î
Î
5.0 10 15
Î
Î
Î
Î
0.64
1.6
4.2
Î
Î
Î
Î
— — —
ÎÎ
Î
ÎÎ
Î
0.51
1.3
3.4
Î
Î
Î
Î
0.88
2.25
8.8
ÎÎ
Î
ÎÎ
Î
— — —
Î
Î
Î
Î
0.36
0.9
2.4
Î
Î
Î
Î
— — —
Î
Î
Î
Î
mAdc
Input Current
I
in
15
± 0.1
±0.00001
± 0.1
± 1.0
µAdc
Input Capacitance
(V
in
= 0)
C
in
5.0
7.5
pF
ОООООООО
Î
ОООООООО
Î
Quiescent Current
(Per Package)
ÎÎ
Î
ÎÎ
Î
I
DD
Î
Î
Î
Î
5.0 10 15
Î
Î
Î
Î
— — —
Î
Î
Î
Î
5.0 10 20
ÎÎ
Î
ÎÎ
Î
— — —
Î
Î
Î
Î
0.005
0.010
0.015
ÎÎ
Î
ÎÎ
Î
5.0 10 20
Î
Î
Î
Î
— — —
Î
Î
Î
Î
150 300 600
Î
Î
Î
Î
µAdc
ОООООООО
Î
ОООООООО
Î
Total Supply Current
(5.) (6.)
(Dynamic plus Quiescent, Per Package) (C
L
= 50 pF on all outputs, all
buffers switching)
ÎÎ
Î
ÎÎ
Î
I
T
Î
Î
Î
Î
5.0 10 15
ООООООООООООООО
Î
ООООООООООООООО
Î
IT = (1.2 µA/kHz)f + I
DD
IT = (2.4 µA/kHz)f + I
DD
IT = (3.6 µA/kHz)f + I
DD
Î
Î
Î
Î
µAdc
4. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.
5. The formulas given are for the typical characteristics only at 25_C.
6. To calculate total supply current at loads other than 50 pF: I
T(CL
) = IT(50 pF) + (CL – 50) Vfk
where: I
T
is in µA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.002.
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SWITCHING CHARACTERISTICS
(7.)
(C
L
= 50 pF, T
A
= 25_C)
Characteristic
Symbol
V
DD
Min
Typ
(8.)
Max
Unit
ООООООООООООО
Î
ООООООООООООО
Î
Output Rise and Fall Time
t
TLH
, t
THL
= (1.5 ns/pF) CL + 25 ns
t
TLH
, t
THL
= (0.75 ns/pF) CL + 12.5 ns
t
TLH
, t
THL
= (0.55 ns/pF) CL + 9.5 ns
ÎÎÎ
Î
ÎÎÎ
Î
t
TLH
,
t
THL
ÎÎ
Î
ÎÎ
Î
5.0 10 15
ÎÎ
Î
ÎÎ
Î
— — —
ÎÎ
Î
ÎÎ
Î
100
50 40
ÎÎ
Î
ÎÎ
Î
200 100
80
Î
Î
Î
Î
ns
ООООООООООООО
Î
ООООООООООООО
Î
ООООООООООООО
Î
ООООООООООООО
Î
ООООООООООООО
Î
Propagation Delay Time
Clock, Data to Q
t
PLH
, t
PHL
= (1.7 ns/pF) CL + 225 ns
t
PLH
, t
PHL
= (0.66 ns/pF) CL + 92 ns
t
PLH
, t
PHL
= (0.5 ns/pF) CL + 65 ns
Reset to Q
t
PLH
, t
PHL
= (1.7 ns/pF) CL + 375 ns
t
PLH
, t
PHL
= (0.66 ns/pF) CL + 147 ns
t
PLH
, t
PHL
= (0.5 ns/pF) CL + 95 ns
ÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎ
Î
t
PLH
,
t
PHL
ÎÎ
Î
ÎÎ
Î
ÎÎ
Î
ÎÎ
Î
ÎÎ
Î
5.0 10 15
5.0 10 15
ÎÎ
Î
ÎÎ
Î
ÎÎ
Î
ÎÎ
Î
ÎÎ
Î
— — —
— — —
ÎÎ
Î
ÎÎ
Î
ÎÎ
Î
ÎÎ
Î
ÎÎ
Î
310 125
90
460 180 120
ÎÎ
Î
ÎÎ
Î
ÎÎ
Î
ÎÎ
Î
ÎÎ
Î
750 250 170
750 250 170
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
ns
ООООООООООООО
Î
Clock Pulse Width
ÎÎÎ
Î
t
WH
ÎÎ
Î
5.0 10 15
ÎÎ
Î
400 175 135
ÎÎ
Î
185
85 55
ÎÎ
Î
— — —
Î
Î
ns
ООООООООООООО
Î
ООООООООООООО
Î
Clock Pulse Frequency
ÎÎÎ
Î
ÎÎÎ
Î
f
cl
ÎÎ
Î
ÎÎ
Î
5.0 10 15
ÎÎ
Î
ÎÎ
Î
— — —
ÎÎ
Î
ÎÎ
Î
2.0
6.0
7.5
ÎÎ
Î
ÎÎ
Î
1.5
3.0
3.75
Î
Î
Î
Î
MHz
ООООООООООООО
Î
Clock Pulse Rise and Fall Times
ÎÎÎ
Î
t
TLH
, t
THL
ÎÎ
Î
5.0 10 15
ÎÎ
Î
— — —
ÎÎ
Î
— — —
ÎÎ
Î
15
5 4
Î
Î
µs
ООООООООООООО
Î
Reset Pulse Width
ÎÎÎ
Î
t
WH
ÎÎ
Î
5.0 10 15
ÎÎ
Î
400 160 120
ÎÎ
Î
200
80 60
ÎÎ
Î
— — —
Î
Î
ns
ООООООООООООО
Î
ООООООООООООО
Î
Setup Time
ÎÎÎ
Î
ÎÎÎ
Î
t
su
ÎÎ
Î
ÎÎ
Î
5.0 10 15
ÎÎ
Î
ÎÎ
Î
350 100
75
ÎÎ
Î
ÎÎ
Î
100
50 40
ÎÎ
Î
ÎÎ
Î
— — —
Î
Î
Î
Î
ns
7. The formulas given are for typical characteristics only at 25_C.
8. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.
Figure 1. Power Dissipation Test Circuit and Waveform
PULSE
GENERATOR
2
CLOCK
DATA
50%
1
f
PULSE
GENERATOR
1
500 µF
V
DD
I
D
0.01 µF CERAMIC
C
L
Q0 Q1 Q2 Q3
D
C
R
V
SS
C
L
C
L
C
L
V
DD
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5
Figure 2. Switching Test Circuit and Waveforms
V
DD
C
L
V
SS
PULSE
GENERATOR
2
PULSE
GENERATOR
1
Q0 Q1 Q2 Q3
D
C
R
C
L
C
L
C
L
DATA
INPUT
CLOCK
INPUT
t
TLH
t
THL
V
DD
0 V
V
DD
0 V
t
su
t
TLH
t
THL
t
WH
t
WL
Q0
t
TLH
t
THL
t
PLH
t
PHL
90%
50%
10%
90%
50%
10%
90%
50%
10%
t
WL
= tWH = 50% Duty Cycle
t
TLH
= t
THL
20 ns
SYNC
t–
Figure 3. Setup and Hold Time Test Circuit and Waveforms
V
DD
C
L
V
SS
PULSE
GENERATOR
2
PULSE
GENERATOR
1
Q0 Q1 Q2 Q3
D
C
R
C
L
C
L
C
L
SYNC
CLOCK
INPUT
DATA
INPUT
50%
V
DD
0 V
V
DD
0 V
t
su
t
h
50%
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6
CIRCUIT SCHEMA TICS
DATA INPUT BUFFER RESET INPUT BUFFER CLOCK INPUT BUFFER
SINGLE BIT
Q
V
DD
V
SS
TO D OF
NEXT BIT
DATA
IN
CLOCK
RESET
V
DD
V
SS
V
DD
V
SS
V
DD
V
SS
DATA
IN
RESET
IN
CLOCK
IN
CLOCK
TO 4 BITS
RESET
TO 4 BITS
DATA TO
FIRST BIT
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7
LOGIC DIAGRAMS
SINGLE BIT
DATA
RESET
C
C
C
C
C
C
C
C
C
C
C
Q TO D OF
NEXT BIT
COMPLETE DEVICE
D
C
R
D
C
R
14
1
15
6
9
7
DATA INPUT BUFFER
CLOCK INPUT BUFFER
RESET INPUT BUFFER
DATA INPUT BUFFER
CLOCK INPUT BUFFER
RESET INPUT BUFFER
54310
Q0 Q1 Q2 Q3
D C
R
Q Q
D C
R
Q Q
D C
R
Q Q
D C
R
Q Q
11 21213
Q0 Q1 Q2 Q3
D C
R
Q Q
D C
R
Q Q
D C
R
Q Q
D C
R
Q Q
VDD = PIN 16
V
SS
= PIN 8
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8
P ACKAGE DIMENSIONS
PDIP–16
P SUFFIX
PLASTIC DIP PACKAGE
CASE 648–08
ISSUE R
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD FLASH.
5. ROUNDED CORNERS OPTIONAL.
–A–
B
F
C
S
H
G
D
J
L
M
16 PL
SEATING
18
916
K
PLANE
–T–
M
A
M
0.25 (0.010) T
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.740 0.770 18.80 19.55 B 0.250 0.270 6.35 6.85 C 0.145 0.175 3.69 4.44 D 0.015 0.021 0.39 0.53 F 0.040 0.70 1.02 1.77 G 0.100 BSC 2.54 BSC H 0.050 BSC 1.27 BSC J 0.008 0.015 0.21 0.38 K 0.110 0.130 2.80 3.30 L 0.295 0.305 7.50 7.74 M 0 10 0 10 S 0.020 0.040 0.51 1.01
____
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9
P ACKAGE DIMENSIONS
SOIC–16
D SUFFIX
PLASTIC SOIC PACKAGE
CASE 751B–05
ISSUE J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION.
18
16 9
SEATING
PLANE
F
J
M
R
X 45
_
G
8 PLP
–B–
–A–
M
0.25 (0.010) B
S
–T–
D
K
C
16 PL
S
B
M
0.25 (0.010) A
S
T
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A 9.80 10.00 0.386 0.393 B 3.80 4.00 0.150 0.157 C 1.35 1.75 0.054 0.068 D 0.35 0.49 0.014 0.019 F 0.40 1.25 0.016 0.049 G 1.27 BSC 0.050 BSC J 0.19 0.25 0.008 0.009 K 0.10 0.25 0.004 0.009 M 0 7 0 7 P 5.80 6.20 0.229 0.244 R 0.25 0.50 0.010 0.019
____
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P ACKAGE DIMENSIONS
TSSOP–16
DT SUFFIX
PLASTIC TSSOP PACKAGE
CASE 948F–01
ISSUE O
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A 4.90 5.10 0.193 0.200 B 4.30 4.50 0.169 0.177 C ––– 1.20 ––– 0.047 D 0.05 0.15 0.002 0.006 F 0.50 0.75 0.020 0.030 G 0.65 BSC 0.026 BSC H 0.18 0.28 0.007 0.011 J 0.09 0.20 0.004 0.008
J1 0.09 0.16 0.004 0.006
K 0.19 0.30 0.007 0.012
K1 0.19 0.25 0.007 0.010
L 6.40 BSC 0.252 BSC
M 0 8 0 8
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH. PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED
0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE –W–.
____
SECTION N–N
SEATING PLANE
IDENT.
PIN 1
1
8
16
9
DETAIL E
J
J1
B
C
D
A
K
K1
H
G
DETAIL E
F
M
L
2X L/2
–U–
S
U0.15 (0.006) T
S
U0.15 (0.006) T
S
U
M
0.10 (0.004) V
S
T
0.10 (0.004)
–T–
–V–
–W–
0.25 (0.010)
16X REFK
N
N
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P ACKAGE DIMENSIONS
H
E
A
1
DIM MIN MAX MIN MAX
INCHES
––– 2.05 ––– 0.081
MILLIMETERS
0.05 0.20 0.002 0.008
0.35 0.50 0.014 0.020
0.18 0.27 0.007 0.011
9.90 10.50 0.390 0.413
5.10 5.45 0.201 0.215
1.27 BSC 0.050 BSC
7.40 8.20 0.291 0.323
0.50 0.85 0.020 0.033
1.10 1.50 0.043 0.059 0
0.70 0.90 0.028 0.035
––– 0.78 ––– 0.031
A
1
H
E
Q
1
L
E
_
10
_
0
_
10
_
L
E
Q
1
_
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS AND ARE MEASURED AT THE PARTING LINE. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.15 (0.006) PER SIDE.
4. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY.
5. THE LEAD WIDTH DIMENSION (b) DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE LEAD WIDTH DIMENSION AT MAXIMUM MATERIAL CONDITION. DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OR THE FOOT. MINIMUM SPACE BETWEEN PROTRUSIONS AND ADJACENT LEAD TO BE 0.46 ( 0.018).
M
L
DETAIL P
VIEW P
c
A
b
e
M
0.13 (0.005)
0.10 (0.004)
1
16 9
8
D
Z
E
A
b c D E e
L
M
Z
SOEIAJ–16
F SUFFIX
PLASTIC EIAJ SOIC PACKAGE
CASE 966–01
ISSUE O
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