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MC10EP11
1:2 Differential Fanout Buffer
The MC10EP11 is a differential 1:2 fanout buf fer. The device is pin
and functionally equivalent to the LVEL11 device. With AC
performance much faster than the LVEL11 device, the EP11 is ideal
for applications requiring the fastest AC performance available.
• 220ps Typical Propagation Delay
• High Bandwidth to 3 GHz Typical
• PECL mode: 3.0V to 5.5V V
• ECL mode: 0V V
with VEE = –3.0V to –5.5V
CC
with VEE = 0V
CC
• Internal Input Resistors: Pulldown on D, Pulldown and Pullup on D
• Q Outputs will default LOW with inputs open or at V
EE
• ESD Protection: >4KV HBM, >200V MM
• New Differential Input Common Mode Range
• Moisture Sensitivity Level 1, Indefinite Time Out of Drypack.
For Additional Information, See Application Note AND8003/D
• Flammability Rating: UL–94 code V–0 @ 1/8”,
Oxygen Index 28 to 34
• Transistor Count = 73 devices
78D
6
V
CC
DQ1
Q0
Q0
1
2
3
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1
SO–8
D SUFFIX
CASE 751
MARKING DIAGRAM
8
HEP11
ALYW
1
*For additional information, see Application Note
AND8002/D
PIN DESCRIPTION
PIN
D, D
Q0, Q0, Q1, Q1 ECL Data Outputs
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
FUNCTION
ECL Data Inputs
45
Q1
Figure 1. 8–Lead Pinout (Top View) and Logic Diagram
Semiconductor Components Industries, LLC, 1999
September, 1999 – Rev. 1.0
V
EE
ORDERING INFORMATION
Device Package Shipping
MC10EP1 1D SOIC 98 Units/Rail
MC10EP1 1DR2 SOIC 2500 Tape & Reel
1 Publication Order Number:
MC10EP11/D
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MC10EP11
MAXIMUM RATINGS*
Symbol Parameter Value Unit
V
EE
V
CC
V
I
V
I
I
out
T
A
T
stg
θ
JA
θ
JC
T
sol
* Maximum Ratings are those values beyond which damage to the device may occur.
DC CHARACTERISTICS, ECL/LVECL (VCC = 0V; VEE = –5.5V to –3.0V) (Note 4.)
Symbol Characteristic Min Typ Max Min Typ Max Min Typ Max Unit
IEE
V
OH
V
OL
V
IH
V
IL
V
IHCMR
I
IH
I
IL
NOTE: 10EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The
1. VCC = 0V, VEE = V
2. All loading with 50 ohms to VCC–2.0 volts.
3. V
4. Input and output parameters vary 1:1 with VCC.
Power Supply Current
(Note 1.)
Output HIGH Voltage
(Note 2.)
Output LOW Voltage
(Note 2.)
Input HIGH Voltage
Single Ended
Input LOW Voltage
Single Ended
Input HIGH Voltage Common Mode
Range (Note 3.)
Input HIGH Current 150 150 150 µA
Input LOW Current D
circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500lfpm is maintained.
min varies 1:1 with VEE, max varies 1:1 with VCC.
IHCMR
Power Supply (VCC = 0V) –6.0 to 0 VDC
Power Supply (VEE = 0V) 6.0 to 0 VDC
Input Voltage (VCC = 0V, VI not more negative than VEE) –6.0 to 0 VDC
Input Voltage (VEE = 0V, VI not more positive than VCC) 6.0 to 0 VDC
Output Current Continuous
Operating Temperature Range –40 to +85 °C
Storage Temperature –65 to +150 °C
Thermal Resistance (Junction–to–Ambient) Still Air
Thermal Resistance (Junction–to–Case) 41 to 44 ± 5% °C/W
Solder Temperature (<2 to 3 Seconds: 245°C desired) 265 °C
–40°C 25°C 85°C
20 29 37 20 30 39 22 31 40 mA
–1135 –1060 –885 –1070 –945 –820 –1010 –885 –760 mV
–1935 –1810 –1685 –1870 –1745 –1620 –1810 –1685 –1560 mV
–1210 –885 –1145 –820 –1085 –760 mV
–1935 –1610 –1870 –1545 –1810 –1485 mV
VEE+2.0 0.0 VEE+2.0 0.0 VEE+2.0 0.0 V
0.5
–150
EEmin
to V
D
, all other pins floating.
EEmax
Surge
500lfpm
0.5
–150
50
100
190
130
mA
°C/W
0.5
–150
µA
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MC10EP11
DC CHARACTERISTICS, LVPECL (VCC = 3.3V ± 0.3V, VEE = 0V) (Note 8.)
–40°C 25°C 85°C
Symbol Characteristic Min Typ Max Min Typ Max Min Typ Max Unit
IEE
V
OH
V
OL
V
IH
V
IL
V
IHCMR
I
IH
I
IL
NOTE: 10EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The
5. VCC = 3.3V, VEE = 0V, all other pins floating.
6. All loading with 50 ohms to VCC–2.0 volts.
7. V
8. Input and output parameters vary 1:1 with VCC.
Power Supply Current
(Note 5.)
Output HIGH Voltage
(Note 6.)
Output LOW Voltage
(Note 6.)
Input HIGH Voltage
Single Ended
Input LOW Voltage
Single Ended
Input HIGH Voltage Common Mode
Range (Note 7.)
Input HIGH Current 150 150 150 µA
Input LOW Current D
circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500lfpm is maintained.
min varies 1:1 with VEE, max varies 1:1 with VCC.
IHCMR
D
20 29 37 20 30 39 22 31 40 mA
2165 2240 2415 2230 2355 2480 2290 2415 2540 mV
1365 1490 1615 1430 1555 1680 1490 1615 1740 mV
2090 2415 2155 2480 2215 2540 mV
1365 1690 1430 1755 1490 1815 mV
2.0 3.3 2.0 3.3 2.0 3.3 V
0.5
–150
0.5
–150
0.5
–150
µA
DC CHARACTERISTICS, PECL (VCC = 5.0V ± 0.5V, VEE = 0V) (Note 12.)
–40°C 25°C 85°C
Symbol Characteristic Min Typ Max Min Typ Max Min Typ Max Unit
IEE
V
OH
V
OL
V
IH
V
IL
V
IHCMR
I
IH
I
IL
NOTE: 10EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The
9. VCC = 5.0V, VEE = 0V, all other pins floating.
10.All loading with 50 ohms to VCC–2.0 volts.
11. V
12.Input and output parameters vary 1:1 with VCC.
Power Supply Current
(Note 9.)
Output HIGH Voltage
(Note 10.)
Output LOW Voltage
(Note 10.)
Input HIGH Voltage
Single Ended
Input LOW Voltage
Single Ended
Input HIGH Voltage Common Mode
Range (Note 11.)
Input HIGH Current 150 150 150 µA
Input LOW Current D
circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500lfpm is maintained.
min varies 1:1 with VEE, max varies 1:1 with VCC.
IHCMR
D
20 29 37 20 30 39 22 31 40 mA
3865 3940 4115 3930 4055 4180 3990 4115 4240 mV
3065 3190 3315 3130 3255 3380 3190 3315 3440 mV
3790 4115 3855 4180 3915 4240 mV
3065 3390 3130 3455 3190 3515 mV
2.0 5.0 2.0 5.0 2.0 5.0 V
0.5
–150
0.5
–150
0.5
–150
µA
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MC10EP11
AC CHARACTERISTICS (VCC = 0V; VEE = –3.0V to –5.5V) or (VCC = 3.0V to 5.5V; VEE =
–40°C 25°C 85°C
Symbol Characteristic Min Typ Max Min Typ Max Min Typ Max Unit
f
max
t
PLH
t
PHL
t
SKEW
t
JITTER
V
PP
t
r
t
f
13.F
14.Skew is measured between outputs under identical transitions.
Maximum Toggle
Frequency (Note 13.)
,
Propagation Delay
(Diff.) CLK–>Q, Q
Device Skew Q, Q
Part–to–Part (Note 14.)
Cycle–to–Cycle Jitter TBD TBD TBD ps
Input Voltage Swing (Diff.) 150 800 1200 150 800 1200 150 800 1200 mV
Output Rise/Fall Times
(20% – 80%) Q, Q
guaranteed for functionality only. VOL and VOH levels are guaranteed at DC only.
max
140 200 270 160 220 300 180 240 320 ps
50 110 180 60 120 200 70 140 220 ps
3.0 3.0 3.0 GHz
TBD
TBD
TBD
TBD
0V)
TBD
TBD
ps
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MC10EP11
P ACKAGE DIMENSIONS
SO–8
D SUFFIX
PLASTIC SOIC PACKAGE
CASE 751–06
ISSUE T
C
A
E
B
A1
D
58
0.25MB
1
H
4
e
M
h
X 45
_
q
C
A
SEATING
PLANE
0.10
L
B
SS
A0.25MCB
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. DIMENSIONS ARE IN MILLIMETER.
3. DIMENSION D AND E DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
5. DIMENSION B DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS
OF THE B DIMENSION AT MAXIMUM MATERIAL
CONDITION.
MILLIMETERS
DIM MIN MAX
A 1.35 1.75
A1 0.10 0.25
B 0.35 0.49
C 0.19 0.25
D 4.80 5.00
E
3.80 4.00
1.27 BSCe
H 5.80 6.20
h
0.25 0.50
L 0.40 1.25
0 7
q
__
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Notes
MC10EP11
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Notes
MC10EP11
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MC10EP11
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MC10EP11/D
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