Datasheet MC10ELT25D, MC10ELT25DR2, MC100ELT25DR2, MC100ELT25D Datasheet (MOTOROLA)

MC10ELT25, MC100ELT25

Differential ECL to TTL
Translator

The MC10ELT/100ELT25 is a differential ECL to TTL translator.
Because ECL levels are used a +5V, -5.2V (or -4.5V) and ground are
required. The small outline 8-lead SOIC package and the single gate of
the ELT25 makes it ideal for those applications where space,
performance and low power are at a premium. Because the mature
MOSAIC 1.5 process is used, low cost can be added to the list of
features.

The VBB output allows the EL T25 to also be used in a single-ended
input mode. In this mode the VBB output is tied to the IN
non-inverting buffer or the IN input for an inverting buffer. If used the
VBB pin should be bypassed to ground via a 0.01µF capacitor.

The ELT25 is available in both ECL standards: the 10ELT is
compatible with MECL 10H logic levels while the 100ELT is
compatible with ECL 100K logic levels. For further information
regarding modeling, refer to AN1596/D “ECLinPS Lite Translator
ELT Family SPICE I/O Model Kit”.

• 2.6ns Typical Propagation Delay

• Internal Input Resistors: Pulldown on D, Pulldown and Pullup on D

• Q Output will default LOW with inputs open or at V

• Differential ECL Inputs

• Small Outline SOIC Package

• 24mA TTL Outputs

• Flow Through Pinouts

• Moisture Sensitivity Level 1, Indefinite Time Out of Drypack.

For Additional Information, See Application Note AND8003/D

• Flammability Rating: UL–94 code V–0 @ 1/8”,

Oxygen Index 28 to 34

• Transistor Count: 135 devices

LOGIC DIAGRAM AND PINOUT ASSIGNMENT

input for a

EE

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8

1

SO–8
D SUFFIX
CASE 751

MARKING DIAGRAM

8

HLT25
ALYW

1

H = MC10
K = MC100
A = Assembly Location

*For additional information, see Application Note
AND8002/D

PIN DESCRIPTION

PIN FUNCTION

D Diff ECL Inputs
Q TTL Output
V

CC

V

EE

V

BB

GND Ground

Positive Supply
Negative Supply
Reference Output

8

KLT25
ALYW

1

L = Wafer Lot
Y = Year
W = Work Week

1

V

EE

2

D0

ECL

3

V

 Semiconductor Components Industries, LLC, 1999

February , 2000 – Rev. 3

45

BB

TTL

V

78Q0

6

NCD0

GND

CC

ORDERING INFORMATION

Device Package Shipping

MC10EL T25D SO–8 98 Units / Rail
MC10EL T25DR2 SO–8
MC100EL T25D SO–8 98 Units / Rail
MC100EL T25DR2 SO–8

1 Publication Order Number:

2500 Units / Reel

2500 Units / Reel

MC10ELT25/D

MC10ELT25, MC100ELT25

MAXIMUM RATINGS*

Symbol Parameter Value Unit

V

CC

V

EE

V

IN

I

OUT

T

A

T

STG

θ

JA

θ

JC

T

sol

* Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the

Recommended Operating Conditions.

TTL OUTPUT DC CHARACTERISTICS

(VCC = 4.5V to 5.5V; VEE = –4.2V to –5.5V 100EL T, –4.94V to –5.5V 10ELT; TA = –40°C to 85°C)

Symbol Characteristic Min Typ Max Unit Condition

V

OH

V

OL

I

CCH

I

CCL

I

EE

I

OS

ECL INPUT DC CHARACTERISTICS

(VCC = 4.5V to 5.5V; VEE = –4.2V to –5.5V 100EL T, –4.94V to –5.5V 10ELT; TA = –40°C to 85°C)

Symbol Characteristic Min Max Min Max Min Typ Max Min Max Unit

I

IH

I

IL

V

CMR

V

PP

V

IH

V

IL

V

BB

1. 200mV input guarantees full logic swing at the output.

Input HIGH Current 150 150 150 150 µA

Input LOW Current 0.5 0.5 0.5 0.5 µA
Common Mode Range VEE +

Minimum Peak-to-Peak Input
Input HIGH Voltage 10ELT

Input LOW Voltage 10EL T

Reference Output 10ELT

DC Supply Voltage (Referenced to GND, VEE = –5.2) 7.0 V
DC Supply Voltage (Referenced to GND, VCC = 5.0) –8.0 V
Input Voltage 0 to V
Current Applied to Output in Low Output State Continuous

Operating Temperature Range (In Free-Air) –40 to 85 °C
Storage Temperature Range –55 to +150 °C
Thermal Resistance (Junction–to–Ambient) Still Air

Thermal Resistance (Junction–to–Case) 41 to 44 ± 5% °C/W
Solder Temperature (<2 to 3 Seconds: 245°C desired) 265 °C

Output HIGH Voltage 2.4 V IOH = –3.0mA
Output LOW Voltage 0.5 V IOL = 24mA
Power Supply Current 11 16 mA
Power Supply Current 13 18 mA
Power Supply Current 15 21 mA
Output Short Circuit Current –150 –60 mA

–40°C 0°C 25°C 85°C

1

100EL T

100EL T

100EL T

V

2.2
200 200 200 200 mV

–1230
–1165

–1950
–1810

–1.43
–1.38

CCVEE

–890
–880

–1500
–1475

–1.30
–1.26

+

2.2

–1170
–1165

–1950
–1810

–1.38
–1.38

Surge

500lfpm

V

CCVEE

–840
–880

–1480
–1475

–1.27
–1.26

+

2.2

–1130
–1165

–1950
–1810

–1.35
–1.38

CC

50

100

190
130

V

CCVEE

–810
–880

–1480
–1475

–1.25
–1.26

2.2

–1060
–1165

–1950
–1810

–1.31
–1.38

+

V

CC

–720
–880

–1445
–1475

–1.19
–1.26

V

mA

°C/W

V

mV

mV

V

AC CHARACTERISTICS

(VCC = 4.5V to 5.5V; VEE = –4.2V to –5.5V 100EL T, –4.94V to –5.5V 10ELT; TA = –40°C to 85°C)

–40°C 0°C 25°C 85°C

Symbol Characteristic Min Max Min Max Min Typ Max Min Max Unit Condition

t

PLH

t

PHL

Propagation Delay 1.7 3.6 1.7 3.6 1.7 3.6 1.7 3.6 ns CL = 20pF
Propagation Delay 2.6 4.1 2.6 4.1 2.6 4.1 2.6 4.1 ns CL = 20pF

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MC10ELT25, MC100ELT25

P ACKAGE DIMENSIONS

SO–8

D SUFFIX

CASE 751–05

ISSUE P

–T–

–B–

–A–

M

B

58

1

4

M

4X P

J

_

X 45

R

0.25 (0.010)

_

M

G

F

C

SEATING

K

8X D

PLANE

SS

A0.25 (0.010)MTB

NOTES:

1. DIMENSIONS A AND B ARE DATUMS AND T IS A
DATUM SURFACE.

2. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

3. DIMENSIONS ARE IN MILLIMETER.

4. DIMENSION A AND B DO NOT INCLUDE MOLD
PROTRUSION.

5. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.

6. DIMENSION D DOES NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS
OF THE D DIMENSION AT MAXIMUM MATERIAL
CONDITION.

MILLIMETERS

DIM MIN MAX

A 4.80 5.00
B 3.80 4.00
C 1.35 1.75
D 0.35 0.49
F 0.40 1.25
G 1.27 BSC
J 0.18 0.25
K 0.10 0.25
M 0 7
P 5.80 6.20
R 0.25 0.50

__

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MC10ELT25, MC100ELT25

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MC10EL T25/D