Datasheet mbt3946dw Datasheet

Symbol

V

CEO

V

CBO

V

EBO

I

C

2

3

4

5

NPN+PNP

MBT3946DW

1

6

Value

40

-40

60

-40

6.0

-5.0

200

-200

SOT-363(SC-88)

6

5

4

1

2

3

Unit

Vdc

mAdc

Thermal Characteristics

Characteristics

Total Package Dissipation

TA=25 C

Thermal Resistance, Junction to Ambient

Junction and Storage, Temperature

(1)

Device Marking

MBT3946DW=46

Symbol Max

P

R

T

J,Tstg

D

JA

q

150

833

-55 to +150

Unit

mW

C/W

C

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Off C har acteristics

MBT3946DW

(NPN)

(PNP)

(2)

V(BR)CEO

V(BR)CBO

V(BR)EBO

IBL

ICEX

40

-40

60

-40

6.0

-5.0

-

50

-50

50

-50

Collector-Emitter Breakdown Voltage

(IC=1.0mAdc.IB=0)

(IC=-1.0mAdc.IB=0) (PNP)

(NPN)

Collector-Base Breakdown Voltage (IC=10 µAdc, IE=0)

(NPN)

(IC=-10 µAdc, IE=0) (PNP)

Emitter-Base Breakdown Voltage (IE=10 µAdc, IC=0)

(IE=-10 µAdc, IC=0)

(NPN)

(PNP)

Base Cutoff Current (VCE=30 Vdc, VEB =3.0 Vdc)

(VCE=-30 Vdc, VEB =-3.0 Vdc) (PNP)

Collector Cutoff Current (VCE=30Vdc, VEB=3.0Vdc)

(VCE=-30Vdc, VEB=-3.0Vdc)

1. Device Mounted on FR4 glass epoxy printed circuit board using the minimum recommeded footprint.

2. Pulse Test:Pulse Width 300 µS, Duty Cycle 2.0%.

Electrical Characteristics (T

< =

Characteristics

=25 C unless otherwise noted) (Countinued)

A

< =

Symbol

Min

Max

Vdc

nAdc

Unit

On Characteristics

DC Current Gain

(IC= 0.1 mAdc, VCE=1.0Vdc)

(IC= 1.0 mAdc, VCE= 1.0 Vdc)

(IC= 10 mAdc, VCE= 1.0Vdc)

(IC= 50 mAdc, VCE= 1.0Vdc)

(IC= 100 mAdc, VCE= 1.0Vdc)

(IC= -0.1 mAdc, VCE=-1.0Vdc)

(IC= -1.0 mAdc, VCE= -1.0 Vdc)

(IC= -10 mAdc, VCE= -1.0Vdc)

(IC= -50 mAdc, VCE= -1.0Vdc)

(IC= -100 mAdc, VCE= -1.0Vdc)

Collector-Emitter Saturation Voltage (IC= 10 mAdc, IB= 1.0mAdc) (IC= 50 mAdc, IB= 5.0mAdc)

(IC= -10 mAdc, IB= -1.0mAdc) (IC=-50 mAdc, IB= -5.0mAdc)

Base-Emitter Saturation Voltage (IC= 10 mAdc, IB= 1.0 mAdc) (IC= 50 mAdc, IB= 5.0 mAdc)

(IC= -10 mAdc, IB= -1.0 mAdc) (IC= -50 mAdc, IB= -5.0 mAdc)

(2)

(NPN)

(PNP)

(NPN)

(PNP)

(NPN)

(PNP)

H

V

CE(sat)

V

BE(sat)

FE

40

70

100

60

30

60

80

100

60

30

-

0.65

-

-0.65

-

300

-

300

-

0.20

0.30

-0.25

-0.40

0.85

0.95

-0.85

-0.95

-

Vdc

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MBT3946DW

Small-signal Characteristics

Current-Gain-Bandwidth Product (IC= 10 mAdc, VCE= 20 Vdc, f=100MHz)

(IC= -10 mAdc, VCE= -20 Vdc, f=100MHz)

Output Capacitance (VCB= 5.0 Vdc, IE=0, f=1.0MHz)

(VCB= -5.0 Vdc, IE=0, f=1.0MHz)

Input Capacitance (VEB= 0.5 Vdc, IC=0, f=1.0MHz)

(VEB= -0.5 Vdc, IC=0, f=1.0MHz)

Input Impedance (VCE= 10 Vdc, IC=1.0 mAdc, f=1.0 kHz)

(VCE= -10 Vdc, IC=-1.0 mAdc, f=1.0 kHz)

Voltage Feeback Radio (VCE= 10Vdc, IC=1.0 mAdc, f=1.0 kHz)

(VCE= -10Vdc, IC=-1.0 mAdc, f=1.0 kHz)

Small-Signal Current Gain (VCE= 10Vdc, IC=1.0 mAdc, , f=1.0 kHz)

(VCE= -10Vdc, IC=-1.0 mAdc, , f=1.0 kHz)

Output Admittance (VCE= 10Vdc, IC=1.0 mAdc, f=1.0kHz)

(VCE= -10Vdc, IC=-1.0 mAdc, f=1.0kHz)

Noise Figure (VCE= 5.0Vdc, IC= 100 µAdc, , RS=1.0k ohms, f=1.0kHz)

(VCE= -5.0Vdc, IC= -100 µAdc, , RS=1.0k ohms, f=1.0kHz)

(NPN) (PNP)

(NPN)

(PNP)

(NPN)

(PNP)

(NPN) (PNP)

(NPN)

(PNP)

(NPN)

(PNP)

C

h

NF

f

T

obo

ibo

ie

re

fe

oe

300 250

-

1.0

2.0

0.5

0.1

100 100

1.0

3.0

-

4.0

4.5

8.0

10.0

10 12

8.0 10

400

40 60

5.0

4.0

MHz

pF

k ohms

-4

x 10

-

µmhos

dB

Switching Characteristics

Delay Time

Rise Time

Storage Time

Fall Time

(Vcc= 3.0 Vdc, VBE= -0.5 Vdc)

(Ic= 10 mAdc, IB1= 1.0 mAdc)

(Vcc= -3.0 Vdc, VBE= 0.5 Vdc)

(Ic= -10 mAdc, IB1= -1.0 mAdc)

(Vcc= 3.0 Vdc,Ic= 10 mAdc)

(Ic= 10 mAdc, IB1=IB2= 1.0 mAdc)

(Vcc= -3.0 Vdc,Ic= -10 mAdc)

(Ic= -10 mAdc, IB1=IB2= -1.0 mAdc)

(NPN)

(PNP)

(NPN)

(PNP)

td

-

tr

ts

tf

-

35 35

200

225

50

75

ns

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MBT3946DW

(NPN)

DUTY CYCLE=2%

300 ns

-0.5V

+10.9V

Figure 1. Delay and Rise Time

Equivalent Test Circuit

TYPICAL TRANSIENT CHARACTERISTICS

<1ns

+3V

275

10k

CS<4 pF

10<t1<500µs

DUTY CYCLE=2%

*Total shunt capacitance of test jig and connectors

TJ=25 C TJ=125 C

0

-9.1V

t

1

+10.9V

10k

1N916

<1ns

+3V

275

CS<4 pF

Figure 2. Storage and Fall Time

Equivalent Test Circuit

10

7.0

5.0

3.0

2.0

CAPACITANCE(pF)

1.0

0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40

REVERSE BIAS VOLTAGE (VOLTS)

Figure 3. Capacitance

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5000

VCC=40V

3000

IC / IB=10

2000

1000

C

ibo

C

obo

700

500

300

Q CHARGE (pC)

200

100

70

50

1.0 2.0 3.0 5.0 7.0 10 20

IC COLLECTOR CURRENT (mA)

Q

T

Q

A

50 70 100 200

30

Figure 4. Charge Data

MBT3946DW

(NPN)

500

300

200

100

70

50

30

TIME (ns)

20

10

7 5

1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

td@VOB=0V

IC / IB=10

tr@VCC=3.0V

IC COLLECTOR CURRENT

Figure 5.Turn-On Time

500

300

IC / IB=20

200

100

70

50

30

STORAGE TIME (ns)

20

,

s

I

10

7 5

1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

IC / IB=10

IC COLLECTOR CURRENT (mA)

t , =ts-1/8t

s

IB1=I

IC / IB=20

IC / IB=10

Figure 7. Storage Time

40V

2.0V

B2

15V

f

500

V

300

200

100

70

50

30

RISE TIME (ns)

f

20

t

10

7 5

1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

CC

IC / IB=10

IC COLLECTOR CURRENT (mA)

Figure 6. Rise Time

500

300

200

100

70

50

30

FALL TIME (ns)

f

t

20

10

7

5

1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

IC / IB=10

IC / IB=20

VCC=40V IB1=I

IC COLLECTOR CURRENT (mA)

Figure 8. Fall Time

=40V

B2

TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS

12

10

8

6

4

NF NOISE FIGURE (dB)

2

0

SOURCE RESISTANCE=200 IC=1.0 mA

SOURCE RESISTANCE=500½ IC=100µA

0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100

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(VCE=5.0 Vdc. TA=25 C, Bandwidth=1.0Hz)

SOURCE RESISTANCE=200 IC=0.5 mA

SOURCE RESISTANCE=1.0k IC=50µA

f FREQUENCY (kHz)

Figure 9.

14

f =1.0kHz

12

10

8

6

4

NF NOISE FIGURE (dB)

2

0

0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100

IC=1.0mA

IC=0.5mA

IC=50 µA

IC=100 µA

RS SOURSE RESISTANCE (kOHMS)

Figure 10.

MMBT3904W

h PARAMETERS

300

200

100

70

hfe CURRENT GAIN

50

30

0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10

IC COLLECTOR CURRENT (mA)

Figure 11. Current Gain

20

10

5.0

2.0

(VCE=10 Vdc,m f=1.0 kHz, TA=25 C)

100

50

20

10

5

2

OUTPUT ADMITTANCE (µ mhos)

oe

h

1

0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10

IC COLLECTOR CURRENT (mA)

Fiugure 12. Output Admittance

)

10

-4

7.0

5.0

3.0

2.0

1.0

INPUT IMPEDANCE (k OHMS)

fe

0.5

h

0.2

0.2 0.3 0.5 1.0 2.0 3.0 5.0 10

0.1

IC COLLECTOR CURRENT (mA)

Figure 13. Input Impedance

1.0

0.7

VOLTAGE FEEDBACK RADIO (X 10

fe

0.5

h

0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10

IC COLLECTOR CURRENT (mA)

Figure 14. Voltage Feedback Radio

TYPICAL STATIC CHARACTERISTICS

2.0

1.0

0.7

0.5

0.3

0.2

DC CURRENT GAIN (NORMALIZED)

fe

h

0.1

0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

TJ=+125 C

+25 C

-55 C

IC COLLECTOR CURRENT (mA)

Figure 15. DC Current Gain

VCE=1.0V

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MBT3946DW

(NPN)

1.0

0.8

0.6

0.4

0.2

COLLECTOR EMITTER VOLTAGE (VOLTS)

0

0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10

CE

V

Ic=1.0mA

10mA

IB BASE CURRENT (mA)

30mA

TJ=25 C

100mA

Figure 16. Collector Saturation Ragion

1.2

TJ=25 C

1.0

0.8

0.6

0.4

V VOLTAGE (VOLTS)

0.2

0

1.0 2.0 5.0 10 20 50 100 200

IC COLLECTOR CURRENT (mA)

V

BE(sat

V

BE(sat)@VCE

V

CE(sat)@IC/IB

)@IC/IB=10

=10

Figure 17. "ON" Voltage

=1.0V

1.0

0.5

qVC FOR V

0

-0.5

-1.0

COEFFICIENT (mV/ C)

-1.5

-2.0

qVB FOR V

20

0

40

IC COLLECTOR CURRENT (mA)

BE(sat)

60

CE(sat)

80

100

+25 C to +125 C

-55 C to +25 C

+25 C to +125 C

140

120

160

Figure 18. Temperature Coefficients

180 200

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MBT3946DW

(PNP)

<1ns

+0.5V

10.6V 300 ns

10k

DUTY CYCLE=2%

*Total shunt capacitance of test jig and connectors

Figure 19. Delay and Rise Time

Equivalent Test Circuit

TYPICAL TRANSIENT CHARACTERISTICS

10

7.0

5.0

3.0

2.0

CAPACITANCE (pF)

1.0

0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40

C

obo

C

ibo

REVERSEM BIAS (VOLTS)

Figure 21. Capacitance

3V

275

CS<4 pF

10<t1<500µs

DUTY CYCLE=2%

TJ=25 C TJ=125 C

5000

3000

2000

1000

700

500

Q CHARGE (pC)

300

200

100

70

50

1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

+9.1V <1ns

0

t

10.9V

1

Figure 20 . Storage and Fall Time

VCC=40V

IC/IB=10

Q T

IC COLLECTOR CURRENT (mA)

Figure 22. Charge Data

3V

10k

1N916

Equivalent Test Circuit

Q

A

275

CS<4 pF

500

300

200

100

70

50

TIME (ns)

30

20

10

7 5

1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

IC COLLECTOP CURRENT (mA)

Figure 23. Turn-On Time

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tr@VCC=3.0V

td@VOB=0V

IC/IB=10

15V

40V

2.0V

500

300

200

VCC=40V IB1=IB2

IC/IB=20

100

70

50

30

FALL TIME (ns)

f

t

20

10

7 5

1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

IC COLLECTYOR CURRENT (mA)

IC/IB=10

Figure 24.Fall Time

MBT3946DW

(PNP)

TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS

(VCE= -5.0 Vdc, TA= 25 C, Bandwidth= 1.0Hz)

5.0

SOURCE RESISTANCE=200½ IC=1.0 mA

4.0

3.0

2.0

NF NOISE FIGURE (dB)

SOURCE RESISTANCE=2.0 k

1.0

IC=100 µA

0

0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100

SOURCE RESISTANCE=200½ IC=0.5 mA

SOURCE RESISTANCE=2.0 k IC=50 µA

f FREQUENCY (kHZ)

Figure 25.

h PARAMETERS

300

200

100

70

DC CURRENT GAIN

fe

h

50

30

0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 1.0

IC COLLECTOR CURRENT (mA)

Figure 27. Current Gain

12

f=1.0 kHz

10

8

6

4

NF NOISE FIGURE (dB)

2

0

0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100

Rg SOURCE RESISTANCE (k OHMS)

Figure 26.

(VCE= -10 Vdc, f= 1.0 kHz, TA= 25 C)

100

70

50

30

20

10

OUTPUT ADMITTANCE (µ mhos)

oe

7

h

5

0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 1.0

IC COLLECTOR CURRENT(mA)

Figure 28. Input Impedance

IC=1.0mA

IC=0.5mA

IC=100µA

IC=50µA

20

10

7.0

5.0

3.0

2.0

1.0

0.7

0.5

INPUT IMPEDANCE (k OHMS)

fe

h

0.3

0.2

0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10

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IC COLLECTOR CURRENT (MA)

Figure 29. Input Impedance

10

)

x4

7.0

5.0

3.0

2.0

1.0

VOLTAGE FEEBACK RATIO (X 10

0.7

fe

h

0.5

0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10

IC COLLECTOR CURRENT (mA)

Figure 30. Votage Feeback Ratio

MBT3946DW

TYPICAL STATIC CHARACTERISTICS

(PNP)

2.0

1.0

0.7

0.5

0.3

0.2

DC CURRENT GAIN (NORMALIZED)

FE

h

0.1

0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

TJ=+125 C

+25 C

-55 C

IC COLLECTOR CURRENT (mA)

VCE=10V

Figurer 31. DC Current Gain

1.0

0.8

0.6

0.4

IC=1.0mA

10mA

30mA

100mA

TJ=25 C

0.2

COLLECTOR EMITTER VOLTAGE (VOLTS)

0

CE

V

0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10

IB BASE CURRENT (mA)

Figure 32. Collector Saturation Region

1.0

V

@ IC/IB=10

TJ=25 C

0.8

0.6

0.4

V VOLTAGE (VOLTS)

0.2

0

10 20 50 10 20 50 100 200

IC COLLECTOR CURRENT (mA)

BE(sat)

V

CE(sat)

V

@VCE=1.0V

BE(sat)

@ IC/IB=10

Figure 33. "ON" Voltages

1.0

0.5

-0.5

-1.0

-1.5

TEMPERATURE COEFFICIENTS (mVAC)

v

-2.0

q

FOR V

q

0

0 20 40 60 80 100 120 140 160 180 200

CE(sat)

VC

FOR V

q

BE(sat)

VB

IC COLLECTOR CURRENT (mA)

+25 C TO +125 C

-55 C TO +25 C

+25 C TO +125 C

-55 C TO +25 C

Figure 34.Temperature Coefficients

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MBT3946DW

SOT-363 Package Outline Dimensions

A

654

B

C

123

E

D

H

K

J

L

M

Dim

A

B C D

E H

J

K

L

M

SOT-363

Min

0.10

1.15

2.00

0.65 REF

0.30

1.80

-

0.80

0.25

0.10

Unit:mm

Max

0.30

1.35

2.20

0.40

2.20

0.10

1.10

0.40

0.25

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