Datasheet mbt3906dw Datasheet

Dual General Purpose Transistor

Lead(Pb)-Free

P b

PNP+PNP Silicon

Maximum Ratings

Rating

Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous

Thermal Characteristics

Symbol

V

CEO

V

CBO

V

EBO

I

C

2

3

4

5

PNP+PNP

MBT3906DW

1

6

Value

-40

-5.0

-200

SOT-363(SC-88)

6

5

4

1

2

3

Unit

Vdc Vdc Vdc

mAdc

Characteristics

Total Device Dissipation TA=25 C

Thermal Resistance, Junction to Ambient

Junction and Storage,Temperature

(1)

Device Marking

MBT3906DW=A2

Electrical Characteristics

Characteristics Symbol

(TA=25 C Unless Otherwise noted)

Off Characteristics

Collector-Emitter Breakdown Voltage

Collector-Base Breakdown Voltage (IC=-10 uAdc, IE=0)

Emitter-Base B

reakdown Voltage (IE=-10 uAdc, IC=0)

(2)

(IC=-1.0mAdc.IB=0)

Symbol Max

P

R

θ

T

J,Tstg

D

JA

V(BR)CEO

V(BR)CBO

V(BR)EBO

150

833

-55 to +150

Min Max

-40

-5.0

-

Unit

mW

C/W

C

Unit

Vdc

Base Cutoff Current (VCE=-30 Vdc,VEB =-3.0 Vdc)

Collector Cutoff Current (VCE=-30Vdc,VEB=-3.0Vdc)

1.Decice Mounted on FR4 glass epoxy printed circuit board using the minimun recommended foot print.

2.Pulse Test:Pluse Width 300 µS, Duty Cycle 2.0%.

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< =

1/6

IBL

ICEX

-

-50

nAdc

27-Sep-05

MBT3906DW

Electrical Characteristics (T

Characteristics

On Characteristics

DC Current Gain

(IC= -0.1 mAdc, VCE= -1.0Vdc)

(IC= -1.0 mAdc, VCE= -1.0 Vdc)

(IC= -10 mAdc, VCE= -1.0Vdc)

(IC= -50 mAdc, VCE= -1.0Vdc)

(IC= -100 mAdc, VCE= -1.0Vdc)

Collector-Emitter Saturation Voltage (IC= -10 mAdc, IB= -1.0mAdc) (IC= -50 mAdc, IB= -5.0mAdc)

Base-Emitter Saturation Voltage (IC= -10 mAdc, IB= -1.0 mAdc) (IC= -50 mAdc, IB= -5.0 mAdc)

(2)

Small-signal Characteristics

Current-Gain-Bandwidth Product (1) (IC= -10 mAdc, VCE= -20 Vdc, f=100MHz)

=25 C unless otherwise noted) (Countinued)

A

Symbol

H

FE

V

CE(sat)

V

BE(sat)

f

T

Min

60

80

100

60

30

-

-0.65

-

250

Max

-

300

-

-0.25

-0.4

-0.85

-0.95

-

Unit

-

Vdc

MHz

Output Capacitance (VCB= -5.0 Vdc, IE=0, f=1.0MHz)

Input Capacitance (VEB= -0.5 Vdc, IC=0, f=1.0MHz)

Input Impedance (VCE= -10 Vdc IC=-1.0 mAdc, f=1.0 kHz)

Voltage Feeback Radio (VCE= -10Vdc IC=1.0 mAdc, f=1.0 kHz)

Small-Signal Current Gain (VCE= -10Vdc IC=1.0 mAdc, , f=1.0 kHz)

Output Admittance (VCE= -10Vdc IC=1.0 mAdc, f=-1.0kHz)

Noise Figure (VCE= -5.0Vdc IC= -100 µAdc, , RS=1.0k ohms, f=1.0kHz)

Switching Characteristics

Delay Time

Rise Time

Storage Time

Fall Time

(Vcc= -3.0 Vdc, VBE= 0.5 Vdc Ic= -10 mAdc, IB1= -1.0 mAdc)

(Vcc= -3.0 Vdc, Ic= -10 mAdc, IB1=IB2= -1.0 mAdc)

C

obo

C

h

td

ts

ibo

h

NF

tr

tf

ie

re

fe

oe

-

2.0

0.1

100

3.0

-

4.5

10

12

10

400

60

4.0

35

225

75

pF

k ohms

-4

x 10

-

µmhos

dB

ns

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MBT3906DW

<1ns

+0.5V

10.6V 300 ns

10k

DUTY CYCLE=2%

*Total shunt capacitance of test jig and connectors

Figure 1. Delay and Rise Time

Equivalent Test Circuit

TYPICAL TRANSIENT CHARACTERISTICS

10

7.0

5.0

3.0

2.0

CAPACITANCE (pF)

1.0

0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40

C

obo

C

ibo

REVERSEM BIAS (VOLTS)

Figure 3. Capacitance

3V

275

CS<4 pF

10<t1<500µs

DUTY CYCLE=2%

TJ=25 C TJ=125 C

5000

3000

2000

1000

700

500

Q CHARGE (pC)

300

200

100

70

50

1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

+9.1V <1ns

0

t

10.9V

1

VCC=40V IC/IB=10

Q T

IC COLLECTOR CURRENT (mA)

Figure 4. Charge Data

3V

275

10k

1N916

CS<4 pF

Figure . Storage and Fall Time

Equivalent Test Circuit

Q

A

500

300

200

100

70

50

TIME (ns)

30

20

10

7 5

1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

IC COLLECTOP CURRENT (mA)

Figure 5. Turn-On Time

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tr@VCC=3.0V

td@VOB=0V

IC/IB=10

15V

40V

2.0V

500

300

200

VCC=40V IB1=IB2

IC/IB=20

100

70

50

30

FALL TIME (ns)

f

t

20

10

7 5

1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

IC COLLECTYOR CURRENT (mA)

IC/IB=10

Figure 6.Fall Time

MBT3906DW

TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS

(VCE= -5.0 Vdc, TA= 25 C, Bandwidth= 1.0Hz)

5.0

SOURCE RESISTANCE=200½ IC=1.0 mA

4.0

3.0

2.0

NF NOISE FIGURE (dB)

SOURCE RESISTANCE=2.0 k

1.0

IC=100 µA

0

0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100

SOURCE RESISTANCE=200½ IC=0.5 mA

SOURCE RESISTANCE=2.0 k IC=50 µA

f FREQUENCY (kHZ)

Figure 7.

h PARAMETERS

300

200

100

70

DC CURRENT GAIN

fe

h

50

30

0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 1.0

IC COLLECTOR CURRENT (mA)

Figure 9. Current Gain

12

f=1.0 kHz

10

8

6

4

NF NOISE FIGURE (dB)

2

0

0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100

Rg SOURCE RESISTANCE (k OHMS)

Figure 8.

(VCE= -10 Vdc, f= 1.0 kHz, TA= 25 C)

100

70

50

30

20

10

OUTPUT ADMITTANCE (µ mhos)

oe

7

h

5

0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 1.0

IC COLLECTOR CURRENT(mA)

Figure 10. Input Impedance

IC=1.0mA

IC=0.5mA

IC=100µA

IC=50µA

20

10

7.0

5.0

3.0

2.0

1.0

0.7

0.5

INPUT IMPEDANCE (k OHMS)

fe

h

0.3

0.2

0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10

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IC COLLECTOR CURRENT (MA)

Figure .11 Input Impedance

10

)

x4

7.0

5.0

3.0

2.0

1.0

VOLTAGE FEEBACK RATIO (X 10

0.7

fe

h

0.5

0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10

IC COLLECTOR CURRENT (mA)

Figure 12. Votage Feeback Ratio

MBT3906DW

TYPICAL STATIC CHARACTERISTICS

2.0

1.0

0.7

TJ=+125 C

+25 C

VCE=10V

-55 C

0.5

0.3

0.2

DC CURRENT GAIN (NORMALIZED)

FE

h

0.1

0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

IC COLLECTOR CURRENT (mA)

Figurer 13. DC Current Gain

1.0

0.8

0.6

0.4

IC=1.0mA

10mA

30mA

100mA

TJ=25 C

0.2

COLLECTOR EMITTER VOLTAGE (VOLTS)

0

CE

V

0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10

IB BASE CURRENT (mA)

Figure 14. Collector Saturation Region

1.0

V

@ IC/IB=10

TJ=25 C

0.8

0.6

0.4

V VOLTAGE (VOLTS)

0.2

0

10 20 50 10 20 50 100 200

BE(sat)

V

CE(sat)

V

@VCE=1.0V

BE(sat)

@ IC/IB=10

IC COLLECTOR CURRENT (mA)

Figure 15. "ON" Voltages

1.0

0.5

-0.5

-1.0

-1.5

TEMPERATURE COEFFICIENTS (mVAC)

v

-2.0

q

FOR V

q

CE(sat)

VC

0

FOR V

q

0 20 40 60 80 100 120 140 160 180 200

BE(sat)

VB

+25 C TO +125 C

-55 C TO +25 C

+25 C TO +125 C

-55 C TO +25 C

IC COLLECTOR CURRENT (mA)

Figure 16.Temperature Coefficients

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MBT3906DW

SOT-363 Package Outline Dimensions

A

654

B

C

123

E

D

H

K

J

L

M

Dim

A

B C D

E H

J

K

L

M

SOT-363

Min

0.10

1.15

2.00

0.65 REF

0.30

1.80

-

0.80

0.25

0.10

Unit:mm

Max

0.30

1.35

2.20

0.40

2.20

0.10

1.10

0.40

0.25

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