Datasheet mbt35200mt1-d Datasheet

MBT35200MT1

s

High Current Surface
Mount PNP Silicon
Switching Transistor for
Load Management in
Portable Applications

MAXIMUM RATINGS (T

Rating Symbol Max Unit

Collector-Emitter Voltage V
Collector-Base Voltage V
Emitter-Base Voltage V
Collector Current − Continuous I
Collector Current − Peak I
Electrostatic Discharge ESD HBM Class 3

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation

TA = 25°C
Derate above 25°C

Thermal Resistance,

Junction−to−Ambient

Total Device Dissipation

TA = 25°C
Derate above 25°C

Thermal Resistance,

Junction−to−Ambient

Thermal Resistance,

Junction−to−Lead #1

Total Device Dissipation

(Single Pulse < 10 sec.)

Junction and Storage

Temperature Range

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.

1. FR− 4 @ Minimum Pad

2. FR− 4 @ 1.0 X 1.0 inch Pad

3. ref: Figure 9

= 25°C)

A

CEO
CBO
EBO

C

CM

PD (Note 1) 625

R

(Note 1)

q

JA

PD (Note 2) 1.0

R

(Note 2)

q

JA

R

q

JL

P

Dsingle

(Notes 2 & 3)

TJ, T

stg

−55 to
+150

−35 Vdc

−55 Vdc

−5.0 Vdc

−2.0 Adc

−5.0 A

MM Class C

mW

5.0

200 °C/W

8.0

120 °C/W

80 °C/W

1.75 W

mW/°C

W

mW/°C

°C

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35 VOLTS

2.0 AMPS

PNP TRANSISTOR

COLLECTOR

1, 2, 5, 6

3

BASE

4

EMITTER

MARKING
DIAGRAM

CASE 318G

TSOP−6

1

M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)

STYLE 6

ORDERING INFORMATION

Device Package Shipping

MBT35200MT1 TSOP−6 3000/Tape & Reel
MBT35200MT1G TSOP−6

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

3000/Tape & Reel

M

G4

G

G

1

†

© Semiconductor Components Industries, LLC, 2005

June, 2005 − Rev. 2

1 Publication Order Number:

MBT35200MT1/D

MBT35200MT1

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Characteristic Symbol Min Typical Max Unit

OFF CHARACTERISTICS

Collector− Emitter Breakdown Voltage

(IC = −10 mAdc, IB = 0)

Collector− Base Breakdown Voltage

(IC = −0.1 mAdc, IE = 0)

Emitter− Base Breakdown Voltage

(IE = −0.1 mAdc, IC = 0)

Collector Cutoff Current

(VCB = −35 Vdc, IE = 0)

Collector−Emitter Cutoff Current

(V

= −35 Vdc)

CES

Emitter Cutoff Current

(VEB = −4.0 Vdc)

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

CBO

I

CES

I

EBO

−35 −45 −

−55 −65 −

−5.0 −7.0 −

− −0.03 −0.1

− −0.03 −0.1

− −0.01 −0.1

ON CHARACTERISTICS

DC Current Gain

(IC = −1.0 A, VCE = −1.5 V)
(IC = −1.5 A, VCE = −1.5 V)
(IC = −2.0 A, VCE = −3.0 V)

Collector− Emitter Saturation Voltage (Note 1.)

(IC = −0.8 A, IB = −0.008 A)
(IC = −1.2 A, IB = −0.012 A)
(IC = −2.0 A, IB = −0.02 A)

Base− Emitter Saturation Voltage (Note 1.)

(IC = −1.2 A, IB = −0.012 A)

Base− Emitter Turn−on Voltage (Note 1. )

(IC = −2.0 A, VCE = −3.0 V)

Cutoff Frequency

(IC = −100 mA, VCE = −5.0 V, f = 100 MHz)
Input Capacitance (VEB = −0.5 V, f = 1.0 MHz) Cibo − 600 650 pF
Output Capacitance (VCB = −3.0 V, f = 1.0 MHz) Cobo − 85 100 pF
Turn−on Time (VCC = −10 V, IB1 = −100 mA, IC = −1 A, RL = 3 W)
Turn−off Time (VCC = −10 V, IB1 = IB2 = −100 mA, IC = 1 A, RL = 3 W)

1. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%

(1)

h

V

CE(sat)

V

BE(sat)

FE

100
100
100

−

−

−

200
200
200

−0.125

−0.175

−0.260

−

400

−

−0.15

−0.20

−0.31

− −0.68 −0.85

V

BE(on)

− −0.81 −0.875

f

T

100 − −

t

on

t

off

− 35 − nS

− 225 − nS

Vdc

Vdc

Vdc

mAdc

mAdc

mAdc

V

V

V

MHz

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2

, COLLECTOR EMITTER SATURATION

VOLTAGE (VOLTS)

0.1

0.01

IC/IB = 100

50

10

MBT35200MT1

0.25

0.20

0.15

0.10

VOLTAGE (VOLTS)

, COLLECTOR EMITTER SATURATION

0.05

IC/IB = 50

100°C

25°C

−55°C

CE(sat)

0.001

V

0.001

Figure 1. Collector Emitter Saturation Voltage

1.6
100°C

1.4

1.2

25°C

1.0

0.8

−55°C

0.6

0.4

, DC CURRENT GAIN (NORMALIZED)

0.2

FE

h

0

CE(sat)

V

0.01 0.1 1.0 0.01

0

IC, COLLECTOR CURRENT (AMPS)

IC, COLLECTOR CURRENT (AMPS)

0.1 1.00.001

Figure 2. Collector Emitter Saturation Voltage

versus Collector Current

1.0

0.8

0.6

0.4

VOLTAGE (VOLTS)

, BASE EMITTER SATURATION

0.2

BE(sat)

V

0.01 0.1 1.0

IC, COLLECTOR CURRENT (AMPS)

0.1 1.00.001

Figure 3. DC Current Gain versus

0

Figure 4. Base Emitter Saturation Voltage

Collector Current

versus Collector Current

−55°C

25°C

100°C

0.010.001

IC, COLLECTOR CURRENT (AMPS)

versus Collector Current

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.4

, BASE EMITTER TURN−ON VOLTAGE (VOLTS)V

0.3

BE(on)

100°C

25°C

−55°C

0.10.001

IC, COLLECTOR CURRENT (AMPS)

1.0

Figure 5. Base Emitter Turn−On Voltage

versus Collector Current

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750

700

650

600

550

500

450

, INPUT CAPACITANCE (pF)

400

ibo

C

350

300

0

0.5 5.01.0

1.50.01

VEB, EMITTER BASE VOLTAGE (VOLTS)

3.02.0 2.5 3.5 4.0 4.5

Figure 6. Input Capacitance

3

MBT35200MT1

225

200

175

150

125

100

75

, OUTPUT CAPACITANCE (pF)

50

obo

C

25

0

0

1.0

0.1

RESISTANCE

0.01

155.0 10

VCB, COLLECTOR BASE VOLTAGE (VOLTS)

Figure 7. Output Capacitance

D = 0.5

0.2

0.1

0.05

0.02

0.01

3020 25 35

10

1.0

0.1

, COLLECTOR CURRENT (AMPS)

C

I

SINGLE PULSE AT T

0.01

0.1 1.0

1 ms10 ms100 ms1 s

DC

= 25°C

amb

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

100 ms

10 100

Figure 8. Safe Operating Area

r(t), NORMALIZED TRANSIENT THERMAL

0.001

SINGLE PULSE

0.00001 0.01 0.1 1.0

0.0001 0.001

t, TIME (sec)

Figure 9. Normalized Thermal Response

10

100 1000

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4

MBT35200MT1

TSOP−6

PACKAGE DIMENSIONS

CASE 318G−02

ISSUE P

0.05 (0.002)

D

456

H

E

1

23

E

b

e

c

A1

A

L

NOTES:

1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.

4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.

DIMAMIN NOM MAX MIN

A1 0.01 0.06 0.10 0.001

q

b 0.25 0.38 0.50 0.010
c 0.10 0.18 0.26 0.004
D 2.90 3.00 3.10 0.114
E 1.30 1.50 1.70 0.051
e 0.85 0.95 1.05 0.034
L 0.20 0.40 0.60 0.008

H

E

q

STYLE 6:

PIN 1. COLLECTOR

MILLIMETERS

0.90 1.00 1.10 0.035

2.50 2.75 3.00 0.099 0.108 0.118
0° 10° 0° 10°

− −

2. COLLECTOR

3. BASE

4. EMITTER

5. COLLECTOR

6. COLLECTOR

INCHES

NOM MAX

0.039 0.043

0.002 0.004

0.014 0.020

0.007 0.010

0.118 0.122

0.059 0.067

0.037 0.041

0.016 0.024

SOLDERING FOOTPRINT*

2.4

0.094

0.95

0.037

1.9

0.075

0.95

0.037

0.7

0.028

1.0

0.039

SCALE 10:1

ǒ

inches

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

mm

Ǔ

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5

MBT35200MT1

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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MBT35200MT1/D

6