Datasheet mbt2907adw Datasheet

Dual General Purpose Transistor

http://www.weitron.com.tw

PNP+PNP Silicon

Maximum Ratings

Rating

Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous

Thermal Characteristics

Characteristics

MBT2907ADW

2

3

4

5

PNP+PNP

Symbol

V

CEO

V

CBO

V

EBO

I

C

Symbol Max

Value

-600

1

6

-60

-5.0

6

5

4

1

2

3

SOT-363(SC-88)

Unit

Vdc Vdc Vdc

mAdc

Unit

Total Device Dissipation TA=25 C

Thermal Resistance, Junction to Ambient

Junction and Storage, Temperature

Device Marking

MBT2907ADW=2F

Electrical Characteristics

Characteristics Symbol

(TA=25 C Unless Otherwise noted)

Off C haracteristics

Collector-Emitter Breakdown Voltage

Collector-Base Breakdown Voltage (IC=-10 uAdc, IE=0)

Emitter-Base Breakdown Voltage (IE=10 uAdc, IC=0)

Base Cutoff Current (VCE=-30 Vdc, VEB =-0.5 Vdc)

(2)

(IC=-10mAdc.IB=0)

P

R

θ

T

J,Tstg

D

JA

-55 to +150

V(BR)CEO

V(BR)CBO

V(BR)EBO

IBL

225

556

Min Max

-60

-5.0

-

-50

mW

C/W

C

Unit

Vdc

nAdc

Collector Cutoff Current (VCE=-30Vdc, VEB=-0.5Vdc)

1. Device Mounted FR4 glass epoxy printed circuit board using the minimun recommended footprint.

2. Pulse Test:Pulse Width 300uS, Duty Cycle 2.0%

WEITRON

< =

1/5

ICEX

-

-50

nAdc

12-Jan-2012

MBT2907ADW

http://www.weitron.com.tw

Electrical Characteristics (T

Characteristics

On Characteristics

DC Current Gain

(IC= -100uAdc, VCE=-10Vdc)

(IC= -1.0 mAdc, VCE= -10Vdc)

(IC= -10 mAdc, VCE= -10Vdc)

(IC= -150 mAdc, VCE= -10Vdc)

(IC= -500 mAdc, VCE= -10Vdc)

Collector-Emitter Saturation Voltage (IC= -150 mAdc, IB= -15mAdc)

(IC= -500 mAdc, IB= -50mAdc)

Base-Emitter Saturation Voltage (IC= 150 mAdc, IB= 15 mAdc) (IC= 500 mAdc, IB= 50 mAdc)

=25 C unless otherwise noted) (Countinued)

A

Symbol

H

FE

V

CE(sat)

V

BE(sat)

Min

75

100

50

-

Max

-

300

-

-0.4

-1.6

-

-1.3

-2.6

Unit

-

Vdc

Small-signal Characteristics

Current-Gain-Bandwidth Product (IC= -50 mAdc, VCE= -20 Vdc, f=100MHz)

Output Capacitance (VCB= -10 Vdc, IE=0, f=1.0MHz)

Input Capacitance (VEB=-2.0 Vdc, IC=0, f=1.0MHz)

Switching Characteristics

Turn-On Time

Delay Time

Rise Time

Turn-Off Time

(Vcc= -30 Vdc, Ic= -150 mAdc, IB1= -15 mAdc)

C

obo

C

f

ibo

t

T

off

d

off

200

-

r

-

8.0

30

45

10

40

100

MHz

pF

ns

WEITRON

2/5

12-Jan-2012

MBT2907ADW

http://www.weitron.com.tw

3.0

= –1.0 V

V

2.0

1.0

V

CE

= –10 V

CE

TYPICAL CHARACTERISTICS

T J = 125°C

25°C

0.7

0.5

0.3

, NORMALIZED CURRENT GAIN

FE

0.2

h

–55°C

–0.1 –0.2 –0.3 –0.5 –0.7 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –200 –300 –500

I C , COLLECTOR CURREN (mA)

Figure 3. DC Current Gain

–1.0

–0.8

–0.6

–0.4

–0.2

VOLTAGE (VOL TS)

, COLLECTOR– EMITTER

CE

V

0

I C = –1.0 mA

–10 mA

–100 mA

–500 mA

–0.005–0.01 –0.02 –0.03 –0.05 –0.7 –0.1 –0.2 –0.3 –0.5 –0.7 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50

I B , BASE CURRENT (mA)

Figure 4. Collector Saturation Region

300 200

100

70 50

30 20

t, TIME (ns)

7.0

5.0

3.0

t d @ V

10

BE(off)

–5.0–7.0 –10 –20 –30 –50 –70 –100 –200 –300 –500

I C , COLLECTOR CURRENT

Figure 5. Turn–On Time

WEITRON

t

r

= 0 V

V

CC

I

C

T

J

= –30 V

/I B = 10

= 25°C

2.0 V

3/5

300 200

100

70 50

30 20

t, TIME (ns)

10

7.0

5.0

3.0

t

f

t ’ s = t s – 1/8 t

f

V

= –30 V

CC

/I B = 10

I

C

I

= I

B1

B2

T J = 25°C

–5.0–7.0 –10 –20 –30 –50 –70 –100 –200 –300 –500

I C , COLLECTOR CURRENT (mA)

Figure 6. Turn–Off Time

12-Jan-2012

MBT2907ADW

http://www.weitron.com.tw

TYPICAL SMALL–SIGNAL CHARACTERISTICS

NOISE FIGURE

V

= 10 Vdc, T A = 25°C

CE

10

8.0

6.0

4.0

2.0

NF, NOISE FIGURE (dB)

0

0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

I C = –1.0 mA, R S= 430 Ω

–500 µA, R S= 560 Ω

–50 µA, R –100 µA, R

= 2.7 k Ω

S

= 1.6 k Ω

S

RS=OPTIMUM SOURCE RESISTANCE

f, FREQUENCY (kHz)

Figure 7. Frequency Effects

30

20

10

7.0

5.0

3.0

C, CAPACITANCE(pF)

2.0 –0.1 –0.2 –0.3 –0.5 –1.0 –2.0 –3.0 –5.0 –10 –20 –30

C

eb

REVERSE VOLTAGE (VOLTS)

Figure 9. Capacitances

C

10

f=1.0 kHz

8.0

6.0

I C = –50µA –100 µA

4.0

2.0

NF, NOISE FIGURE (dB)

0

50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k

–500 µA –1.0 mA

R S, SOURCE RESISTANCE ( Ω )

Figure 8. Source Resistance Effects

400 300

200

100

80

cb

60

PRODUCT (MHz)

40 30

, CURRENT– GAIN — BANDWIDTH

T

f

20

–1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500 –1000

VCE=–20 V T J= 25°C

I C , COLLECTOR CURRENT (mA)

Figure 10. Current–Gain — Bandwidth Product

–1.0

T J = 25°C

–0.8

–0.6

– 0.4

–0.2

V, VOLTAGE (VOLTS)

0

–0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100–200 –500

I C , COLLECTOR CURRENT (mA)

WEITRON

V

@ I C /I B = 10

BE(sat)

V

@ V CE = –10 V

BE(on)

V

@ I C /I B = 10

CE(sat)

Figure 11. “On” Voltage

4/5

+0.5

0

–0.5

– 1.0

–1.5

–2.0

R

for V

θVC

CE(sat)

R

for V

θVB

BE

COEFFICIENT (mV/ ° C)

–2.5

–0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100–200 –500

I C , COLLECTOR CURRENT (mA)

Figure 12. Temperature Coefficients

12-Jan-2012

MBT2907ADW

http://www.weitron.com.tw

SOT-363 Package Outline Dimensions

A

654

B

C

123

E

D

H

K

J

L

M

Dim

A B C D E H

J K L

M

SOT-363

Min

0.10

1.15

2.00

0.65 REF

0.30

1.80

-

0.80

0.25

0.10

Unit:mm

Max

0.30

1.35

2.20

0.40

2.20

0.10

1.10

0.40

0.25

WEITRON

5/5

12-Jan-2012