Page 1
MBRM3100
S
3A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
POWERMITEâ3
Features
· Guard Ring Die Construction for
TCUDORPWEN
Transient Protection
· Low Power Loss, High Efficiency
· High Reverse Breakdown Voltage
· For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
· Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
· Case: POWERMITEâ3, Molded Plastic
· Terminals: Solderable per MIL-STD-202,
Method 208
· Moisture sensitivity: Level 1 per J-STD-020A
· Polarity: See Diagram
· Marking: See Sheet 3
· Weight: 0.072 grams (approx.)
Maximum Ratings
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current (See also Figure 5)
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method) @ T
Typical Thermal Resistance Junction to Soldering Point
Typical Thermal Resistance Junction to Case
Operating Temperature Range
Storage Temperature Range
@ TA = 25°C unless otherwise specified
Characteristic Symbol
UNDER DEVELOPMENT
E
B
M
= 90°C
C
A
P
3
12
D
RRM
RWM
V
R
I
O
FSM
qJS
qJC
T
STG
C
j
C
PIN 1
PIN 2
Note: Pins 1 & 2 must be electrically
connected at the printed circuit board.
V
V
V
R(RMS)
I
R
R
T
G
H
J
K
L
PIN 3, BOTTOMSIDE
HEAT
INK
All Dimensions in mm
Value
100 V
70 V
3A
50 A
3.5 °C/W
1.6 °C/W
-55 to +125 °C
-55 to +150 °C
POWERMITEâ3
A
B
C
D
E
G
H
J
K
L
M
P
Min Max
4.03 4.09
6.40 6.61
.889 NOM
1.83 NOM
1.10 1.14
.178 NOM
5.01 5.17
4.37 4.43
.178 NOM
.71 .77
.36 .46
1.73 1.83
Dim
Unit
Electrical Characteristics
Characteristic Symbol
Reverse Breakdown Voltage (Note 1)
Forward Voltage (Note 1)
Reverse Current (Note 1)
Total Capacitance
Notes: 1. Short duration test pulse used to minimize self-heating effect.
@ TA = 25°C unless otherwise specified
Min Typ Max Unit
V
(BR)R
V
F
I
R
C
T
100 ¾¾V
¾
¾
¾
¾
¾
¾
¾ 85 ¾ pF
0.72
0.60
0.79
0.68
2
0.5
0.76
¾
¾
¾
100
20
IR = 0.2mA
I
= 3A, Tj = 25°C
F
= 3A, Tj = 100°C
I
F
V
I
= 6A, Tj = 25°C
F
= 6A, Tj = 100°C
I
F
= 25°C, VR = 100V
mAmAT
j
= 100°C, VR = 100V
T
j
f = 1.0MHz, V
Test Condition
= 4.0V DC
R
DS30354 Rev. 3 - 1 1 of 3 MBRM3100
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Page 2
TCUDORPWEN
10,000
0
g
10
1000
g
1.0
T = 100°C
j
T = 25°C
j
1000
100
T = 125°C
j
T = 100°C
j
0.1
F
I , INSTANTANEOUS FORWARD CURRENT (A)
0.01
0 0.2 0.4 0.6 0.8 1.0
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Fig.1 Typical Forward Characteristics
5
Single Half-Sine-Wave
(JEDEC Method)
40
T = 90°C
C
30
20
10
FSM
I , PEAK FORWARD SURGE CURRENT (A)
0
110100
NUMBER OF CYCLES AT 60 Hz
. 3 Max Non-Repetitive Peak Fwd Surge Current
Fi
I , INSTANTANEOUS REVERSE CURRENT (mA)
R
C , TOTAL CAPACITANCE (pF)
T = 75°C
j
10
T = 25°C
j
1
0
V , INSTANTANEOUS REVERSE VOLTAGE (V)
20
R
40
60 80
Fig.2 Typical Reverse Characteristics
100
T
10
0
20 40 60 80 100
V , REVERSE VOLTAGE (V)
R
Fig. 4 Typical Capacitance vs.
Reverse Volta
e
100
f = 1MHz
UNDER DEVELOPMENT
DS30354 Rev. 3 - 1 2 of 3 MBRM3100
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Page 3
TCUDORPWEN
4
g
)
3.5
2.5
1.5
4
T = 125°C
3
2
Note 1
Note 2
j
3
2
NOTE 2
1
F
I , DC FORWARD CURRENT (A)
0.5
0
Ordering Information
Notes: 1. TA = T
2. Device mounted on GETEK substrate, 2”x2”, 2 oz. copper, double-sided, cathode pad dimensions 0.75” x 1.0”, anode pad
dimensions 0.25” x 1.0”. R
3. Device mounted on FR-4 substrate, 2”x2”, 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout
document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. R
105-130°C/W.
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
25
MBRM3100-13
SOLDERING POINT
Note 3
50
T , AMBIENT TEMPERATURE (°C)
A
Fig. 5 DC Forward Current Deratin
Device
75 100
(Note 4)
, R
= 3.5°C/W, R
qJS
in range of 25-45°C/W.
qJA
125
qSA
150
Packaging Shipping
POWERMITEâ3 5000/Tape & Reel
= 0°C/W.
P , AVERAGE FORWARD POWER DISSIPATION (W
1
0
F(AV)
1
0
I , AVERAGE FORWARD CURRENT (A)
F(AV)
Fig. 6 Forward Power Dissipation
NOTE 3
4
3
2
5
6
in range of
qJA
Marking Information
7
MBRM3100
MBRM3100 = Product type marking code
= Manufacturers’ code marking
YYWW = Date code marking
YY = Last digit of year ex: 02 for 2002
YYWW(K)
WW = Week code 01 to 52
(K) = Factory Designator
UNDER DEVELOPMENT
POWERMITE is a registered trademark of Microsemi Corporation.
DS30354 Rev. 3 - 1 3 of 3 MBRM3100
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