Datasheet MBRB30H60CTT4G Specification

MBRB30H60CT-1G,
MBR30H60CTG,
MBRF30H60CTG,
MBRB30H60CTT4G,
NRVBB30H60CTT4G,
MBRJ30H60CTG

http://onsemi.com

SWITCHMODE
Power Rectifier
60 V, 30 A

Features and Benefits

 Low Forward Voltage
 Low Power Loss/High Efficiency
 High Surge Capacity
 175C Operating Junction Temperature
 30 A Total (15 A Per Diode Leg)
 Guard−Ring for Stress Protection
 AEC−Q101 Qualified and PPAP Capable
 NRVBB Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements

 These are Pb−Free Devices*

Applications

 Power Supply − Output Rectification
 Power Management
 Instrumentation

SCHOTTKY BARRIER

RECTIFIERS

30 AMPERES, 60 VOLTS

1

2, 4

3

4

1

2

3

I2PAK (TO −262)

CASE 418D

PLASTIC

STYLE 3

1

2

3

TO−220

CASE 221A

PLASTIC

STYLE 6

4

Mechanical Characteristics:

 Case: Epoxy, Molded
 Epoxy Meets UL 94 V−0 @ 0.125 in
 Weight (Approximately): 1.5 Grams (I

Weight (Approximately): 1.7 Grams (D
Weight (Approximately): 1.9 Grams (TO−220 and TO−220FP)

2

PAK)

2

PAK)

 Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

 Lead Temperature for Soldering Purposes:

260C Max. for 10 Seconds

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

 Semiconductor Components Industries, LLC, 2012

January, 2012 − Rev. 10

1 Publication Order Number:

TO−220

CASE 221D

STYLE 3

D2PAK

CASE 418B

ORDERING AND MARKING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.

TO−220

CASE 221AH

MBRB30H60CT/D

MBRB30H60CT−1G, MBR30H60CTG, MBRF30H60CTG, MBRB30H60CTT4G,

NRVBB30H60CTT4G, MBRJ30H60CTG

MAXIMUM RATINGS (Per Diode Leg)

Rating

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

Average Rectified Forward Current

(Rated V

) TC = 159C

R

Peak Repetitive Forward Current

(Rated V

, Square Wave, 20 kHz)

R

Nonrepetitive Peak Surge Current

(Surge applied at rated load conditions halfwave, single phase, 60 Hz)

Operating Junction Temperature (Note 1) T

Storage Temperature T

Voltage Rate of Change (Rated VR) dv/dt 10,000

Controlled Avalanche Energy (see test conditions in Figures 11 and 12) W

ESD Ratings:

Machine Model = C
Human Body Model = 3B

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.

1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP

Symbol Value Unit

V
V

I

F(AV)

I

I

RRM

RWM

V

R

FRM

FSM

J

stg

60 V

A

15

A

30

A

260

−55 to +175 C

*55 to +175 C

V/ms

AVAL

350 mJ

V

> 400

> 8000

/dTJ < 1/R

D

.

q

JA

THERMAL CHARACTERISTICS

Characteristic Symbol Value Unit

Maximum Thermal Resistance

(MBRB30H60CT−1G and MBR30H60CTG)

Junction−to−Case
Junction−to−Ambient

(MBRF30H60CTG and MBRJ30H60CTG)

Junction−to−Case

(MBRB30H60CTT4G and NRVBB30H60CTT4G)

Junction−to−Case

ELECTRICAL CHARACTERISTICS (Per Diode Leg)

Characteristic

Maximum Instantaneous Forward Voltage (Note 2)

(I

= 15 A, TC = 25C)

F

(IF = 15 A, TC = 125C)
(IF = 30 A, TC = 25C)
(IF = 30 A, TC = 125C)

Maximum Instantaneous Reverse Current (Note 2)

(Rated DC Voltage, T
(Rated DC Voltage, TC = 125C)

2. Pulse Test: Pulse Width = 300 ms, Duty Cycle  2.0%.

= 25C)

C

C/W

R

q

JC

R

q

JA

R

q

JC

R

q

JC

2.0
70

4.4

1.6

Symbol Value Unit

v

F

0.62

V

0.56

0.78

0.71

i

R

0.3

mA

45

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2

MBRB30H60CT−1G, MBR30H60CTG, MBRF30H60CTG, MBRB30H60CTT4G,

NRVBB30H60CTT4G, MBRJ30H60CTG

100

10

1

0.1

, INSTANTANEOUS FORWARD CURRENT (A)

F

I

VF, INSTANTANEOUS FORWARD VOLTAGE (V)

Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage

1.0E−01

1.0E−02

1.0E−03

TJ = 125C

TJ = 25C

0.40 0.2 1.0

T

= 125C

J

100

TJ = 125C

10

TJ = 25C

1

0.1

0.80.6

1.2
, INSTANTANEOUS FORWARD CURRENT (A)

F

I

VF, INSTANTANEOUS FORWARD VOLTAGE (V)

0.40 0.2 1.0

0.80.6 1.2

1.0E−01

1.0E−02
T

= 125C

J

1.0E−03

1.0E−04

T

= 25C

, REVERSE CURRENT (A)

1.0E−05

R

I

J

1.0E−06
100

20

, REVERSE VOLTAGE (V)

V

R

30 40 60

Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current

30

25

20

dc

SQUARE WAVE

15

10

5

, AVERAGE FORWARD CURRENT (A)

F

0

I

120110

140 150130 160

TC, CASE TEMPERATURE (C)

Figure 5. Current Derating for

MBRB30H60CT−1G, MBR30H60CTG,

MBRB30H60CTT4G and NRVBB30H60CTT4G

1.0E−04

= 25C

T

20

J

30 40 60

1.0E−05

, MAXIMUM REVERSE CURRENT (A)

R

I

50 50

1.0E−06
100

, REVERSE VOLTAGE (V)

V

R

20

18

16

14

SQUARE

DC

(W)

12

10

8

6

4

, AVERAGE POWER DISSIPATION

2

FO

P

170 180100

0

510

I

, AVERAGE FORWARD CURRENT (AMPS)

O

150

Figure 6. Forward Power Dissipation

2520

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MBRB30H60CT−1G, MBR30H60CTG, MBRF30H60CTG, MBRB30H60CTT4G,

NRVBB30H60CTT4G, MBRJ30H60CTG

30

25

20

dc

SQUARE WAVE

15

10

5

, AVERAGE FORWARD CURRENT (A)

F

I

0

100 110 120 130 140 150 160 170 180

, CASE TEMPERATURE (C)

T

C

Figure 8. Current Derating for

MBRF30H60CTG and MBRJ30H60CTG

10

D = 0.5

1

0.2

0.1

0.05

0.1

0.01

SINGLE PULSE

0.01

R(t), TRANSIENT THERMAL RESISTANCE

0.0001 0.001 0.01 1 10 1000.000001

Figure 9. Thermal Response Junction−to−Case for MBRB30H60CT−1G, MBR30H60CTG,

MBRB30H60CTT4G and NVRBB30H60CTT4G

, TIME (sec)

t

1

10,000

1000

C, CAPACITANCE (pF)

100

0

20 40

V

, REVERSE VOLTAGE (V)

R

Figure 7. Capacitance

P

(pk)

DUTY CYCLE, D = t1/t

TJ = 25C

50

t

1

t

2

6010 30

2

10000.10.00001

0.1

0.01

0.001

R(t), TRANSIENT THERMAL RESISTANCE

10

D = 0.5

1

0.2

0.1

0.05

0.01

SINGLE PULSE

P

(pk)

DUTY CYCLE, D = t1/t

0.0001 0.001 0.01 1 10 1000.000001

, TIME (sec)

t

1

Figure 10. Thermal Response Junction−to−Case for MBRF30H60CTG and MBRJ30H60CTG

http://onsemi.com

4

t

1

t

2

2

10000.10.00001

MBRB30H60CT−1G, MBR30H60CTG, MBRF30H60CTG, MBRB30H60CTT4G,

NRVBB30H60CTT4G, MBRJ30H60CTG

+V

DD

I

10 mH COIL

L

BV

DUT

I

D

t

1

t

2

MERCURY

SWITCH

S

V

D

I

D

I

DUT

1

t

0

L

V

DD

t

Figure 11. Test Circuit

The unclamped inductive switching circuit shown in
Figure 11 was used to demonstrate the controlled avalanche
capability of this device. A mercury switch was used instead
of an electronic switch to simulate a noisy environment
when the switch was being opened.

When S
up linearly; and energy is stored in the coil. At t

is closed at t0 the current in the inductor IL ramps

1

the switch

1

is opened and the voltage across the diode under test begins
to rise rapidly, due to di/dt effects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
BV

and the diode begins to conduct the full load current

DUT

which now starts to decay linearly through the diode, and
goes to zero at t

.

2

By solving the loop equation at the point in time when S
is opened; and calculating the energy that is transferred to
the diode it can be shown that the total energy transferred is
equal to the energy stored in the inductor plus a finite amount
of energy from the V
breakdown (from t

power supply while the diode is in

DD

to t2) minus any losses due to finite

1

component resistances. Assuming the component resistive

Figure 12. Current−Voltage Waveforms

elements are small Equation (1) approximates the total
energy transferred to the diode. It can be seen from this
equation that if the V

voltage is low compared to the

DD

breakdown voltage of the device, the amount of energy
contributed by the supply during breakdown is small and the
total energy can be assumed to be nearly equal to the energy
stored in the coil during the time when S
Equation (2).

EQUATION (1):

ǒ

BV

BV

DUT

DUTVDD

Ǔ

2

W

AVAL

1

EQUATION (2):

W

AVAL

[

[

1

LI

LPK

2

2

1

LI

LPK

2

was closed,

1

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5

MBRB30H60CT−1G, MBR30H60CTG, MBRF30H60CTG, MBRB30H60CTT4G,

NRVBB30H60CTT4G, MBRJ30H60CTG

MARKING DIAGRAMS

AYWW

B30H60G

AKA

2

PAK (TO −262)

I

AYWW

B30H60G

AKA

TO−220

AYWW

B30H60G

AKA

TO−220FP

B30H60 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
AKA = Polarity Designator

AYWW

B30H60G

AKA

2

D

PAK

ORDERING INFORMATION

Device Package Shipping

MBRB30H60CT−1G TO−262

(Pb−Free)

MBR30H60CTG TO−220

(Pb−Free)

MBRF30H60CTG TO−220FP

(Pb−Free)

MBRB30H60CTT4G D2PAK

(Pb−Free)

NRVBB30H60CTT4G D2PAK

(Pb−Free)

MBRJ30H60CTG TO−220FP

(Pb−Free, Halogen Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

50 Units / Rail

50 Units / Rail

50 Units / Rail

800 / Tape & Reel

800 / Tape & Reel

50 Units / Rail

†

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6

MBRB30H60CT−1G, MBR30H60CTG, MBRF30H60CTG, MBRB30H60CTT4G,

NRVBB30H60CTT4G, MBRJ30H60CTG

PACKAGE DIMENSIONS

I2PAK (TO−262)

CASE 418D−01

ISSUE D

C

E

V

A

J

H

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIM MIN MAX MIN MAX

A 0.335 0.380 8.51 9.65
B 0.380 0.406 9.65 10.31
C 0.160 0.185 4.06 4.70
D 0.026 0.035 0.66 0.89
E 0.045 0.055 1.14 1.40

F 0.122 REF 3.10 REF
G 0.100 BSC 2.54 BSC
H 0.094 0.110 2.39 2.79

J 0.013 0.025 0.33 0.64
K 0.500 0.562 12.70 14.27
S 0.390 REF 9.90 REF
V 0.045 0.070 1.14 1.78
W 0.522 0.551 13.25 14.00

STYLE 3:

PIN 1. ANODE

2. CATHODE

3. ANODE

4. CATHODE

MILLIMETERSINCHES

−T−

SEATING
PLANE

−B−

4

W

123

F

K

S

G

D 3 PL

0.13 (0.005) T

M

M

B

TO−220

CASE 221A−09

ISSUE AG

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

SEATING

−T−

PLANE

B

4

Q

123

F

T

A

U

C

S

H

K

Z

L

V

R

J

G

D

N

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.

DIM MIN MAX MIN MAX

A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D 0.025 0.036 0.64 0.91
F 0.142 0.161 3.61 4.09
G 0.095 0.105 2.42 2.66
H 0.110 0.161 2.80 4.10
J 0.014 0.025 0.36 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 --- 1.15 ---
Z --- 0.080 --- 2.04

STYLE 6:

PIN 1. ANODE

2. CATHODE

3. ANODE

4. CATHODE

MILLIMETERSINCHES

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MBRB30H60CT−1G, MBR30H60CTG, MBRF30H60CTG, MBRB30H60CTT4G,

NRVBB30H60CTT4G, MBRJ30H60CTG

PACKAGE DIMENSIONS

D2PAK 3

CASE 418B−04

−B−

4

231

−T−

SEATING
PLANE

VARIABLE
CONFIGURATION
ZONE

G

M

S

D

3 PL

0.13 (0.005) T

M

R

L

M

ISSUE K

C

E

V

W

A

K

H

M

B

N P

W

J

U

L

M

NOTES:

1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.

DIM MIN MAX MIN MAX

A 0.340 0.380 8.64 9.65
B 0.380 0.405 9.65 10.29
C 0.160 0.190 4.06 4.83
D 0.020 0.035 0.51 0.89
E 0.045 0.055 1.14 1.40
F 0.310 0.350 7.87 8.89
G 0.100 BSC 2.54 BSC
H 0.080 0.110 2.03 2.79
J 0.018 0.025 0.46 0.64
K 0.090 0.110 2.29 2.79
L 0.052 0.072 1.32 1.83
M 0.280 0.320 7.11 8.13
N 0.197 REF 5.00 REF
P 0.079 REF 2.00 REF
R 0.039 REF 0.99 REF
S 0.575 0.625 14.60 15.88
V 0.045 0.055 1.14 1.40

L

MILLIMETERSINCHES

F

VIEW W−W VIEW W−W VIEW W−W

123

F

F

SOLDERING FOOTPRINT*

10.49

8.38

16.155

2X

3.504

2X

1.016

5.080

PITCH

DIMENSIONS: MILLIMETERS

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

http://onsemi.com

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MBRB30H60CT−1G, MBR30H60CTG, MBRF30H60CTG, MBRB30H60CTT4G,

NRVBB30H60CTT4G, MBRJ30H60CTG

PACKAGE DIMENSIONS

TO−220 FULLPAK

CASE 221D−03

ISSUE K

SEATING

−T−

PLANE

F

−B−

Q

C

S

U

A

123

H

G
N

−Y−

J

R

K

L

D

3 PL

M

M

0.25 (0.010) Y

B

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH

3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.

INCHES

DIMAMIN MAX MIN MAX

0.617 0.635 15.67 16.12

B 0.392 0.419 9.96 10.63
C 0.177 0.193 4.50 4.90
D 0.024 0.039 0.60 1.00
F 0.116 0.129 2.95 3.28
G 0.100 BSC 2.54 BSC
H 0.118 0.135 3.00 3.43
J 0.018 0.025 0.45 0.63
K 0.503 0.541 12.78 13.73
L 0.048 0.058 1.23 1.47
N 0.200 BSC 5.08 BSC
Q 0.122 0.138 3.10 3.50
R 0.099 0.117 2.51 2.96
S 0.092 0.113 2.34 2.87
U 0.239 0.271 6.06 6.88

STYLE 3:

PIN 1. ANODE

2. CATHODE

3. ANODE

MILLIMETERS

TO−220 FULLPACK, 3−LEAD

CASE 221AH

ISSUE B

NOTES:

E

E/2

4

Q

123

L

3X

b2

L1

P

M

B

0.14

D

C

3X

b

0.25

M

M

AB

H1

M

A

C

A

c

A

B

A1

NOTE 3

A2

SEATING
PLANE

e

1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. CONTOUR UNCONTROLLED IN THIS AREA.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH
AND GATE PROTRUSIONS. MOLD FLASH AND GATE
PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE TO BE MEASURED AT OUTERMOST
EXTREME OF THE PLASTIC BODY.

5. DIMENSION b2 DOES NOT INCLUDE DAMBAR
PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION
SHALL NOT EXCEED 2.00.

MILLIMETERS

DIM MIN MAX

A 4.30 4.70
A1 2.50 2.90
A2 2.50 2.70

b 0.54 0.84
b2 1.10 1.40

c 0.49 0.79
D 14.70 15.30
E 9.70 10.30

e

2.54 BSC

H1 6.70 7.10

L 12.70 14.73

L1 --- 2.80

P 3.00 3.40
Q 2.80 3.20

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MBRB30H60CT−1G, MBR30H60CTG, MBRF30H60CTG, MBRB30H60CTT4G,

NRVBB30H60CTT4G, MBRJ30H60CTG

FULLPAK is a trademark of Semiconductor Components Industries, LLC.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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MBRB30H60CT/D

10