Datasheet MBR4035PT, MBR4060PT DataSheet (Vishay)

Dual Common-Cathode Schottky Rectifier

3

2

1

TO-247AD (TO-3P)

PIN 1

PIN 3

PRIMARY CHARACTERISTICS

I

F(AV)

V

RRM

I

FSM

V

F

T

max. 150 °C

J

PIN 2

CASE

35 V to 60 V

0.60 V, 0.62 V

40 A

400 A

MBR4035PT thru MBR4060PT

Vishay General Semiconductor

FEATURES

• Guardring for overvoltage protection

• Lower power losses, high efficiency

• Low forward voltage drop

• High forward surge capability

• High frequency operation

• Solder dip 260 °C, 40 s

• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection application.

MECHANICAL DATA

Case: TO-247AD (TO-3P)

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL MBR4035PT MBR4045PT MBR4050PT MBR4060PT UNIT

Maximum repetitive peak reverse voltage V

Maximum working peak reverse voltage V

Maximum DC blocking voltage V

Maximum average forward rectified current at T

Peak forward surge current, 8.3 ms single
half sine-wave superimposed on rated load per diode

Peak repetitive reverse surge current per diode

Voltage rate of change at (rated V

Operating junction temperature range T

Storage temperature range T

Note:

(1) 2.0 µs pulse width, f = 1.0 kHz

Document Number: 88679
Revision: 25-Mar-08

) dV/dt 10 000 V/µs

R

For technical questions within your region, please contact one of the following:

[e-mail]

= 125 °C I

C

(1)

, [e-mail], [e-mail]

35 45 50 60 V

RRM

35 45 50 60 V

RWM

35 45 50 60 V

DC

F(AV)

I

400 A

FSM

I

RRM

- 65 to + 150 °C

J

- 65 to + 175 °C

STG

2.0 1.0 A

40 A

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1

MBR4035PT thru MBR4060PT

Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER TEST CONDITIONS SYMBOL MBR4035PT MBR4045PT MBR4050PT MBR4060PT UNIT

Maximum instantaneous
forward voltage per diode

Maximum instantaneous
reverse current at rated DC
blocking voltage per diode

(1)

(1)

IF = 20 A,
I

= 20 A,

F

I

= 40 A,

F

I

= 40 A,

F

T

= 25 °C

C

T

= 125 °C

C

T

= 25 °C

C

T

= 125 °C

C

TC = 25 °C
T

= 125 °C

C

V

F

I

R

0.70

0.60

0.80

0.75

1.0

100

Note:

(1) Pulse test: 300 µs pulse width, 1 % duty cycle

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL MBR4035PT MBR4045PT MBR4050PT MBR4060PT UNIT

Maximum thermal resistance from junction to case per diode R

1.2 °C/W

θJC

0.72

0.62

-

-

mA

V

ORDERING INFORMATION (Example)

PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE

TO-247AD MBR4045PT-E3/45 6.13 45 30/tube Tube

RATINGS AND CHARACTERISTICS CURVES

(T

= 25 °C unless otherwise noted)

A

50

Resistive or Inductive Load

40

30

20

10

Average Forward Current (A)

0

0

50

Case Temperature (°C)

Figure 1. Forward Current Derating Curve

100

150

400

300

200

Peak Fo rward Surge Current (A)

100

1

Number of Cycles at 60 Hz

TJ = TJ Max.

8.3 ms Single Half Sine-Wave

10

100

Figure 2. Maximum Non-Repetitive Peak Forward Surge

Current Per Diode

www.vishay.com For technical questions within your region, please contact one of the following:
2

[e-mail]

, [e-mail], [e-mail]

Document Number: 88679

Revision: 25-Mar-08

MBR4035PT thru MBR4060PT

Vishay General Semiconductor

100

10

1

TJ = 150 °C

Pulse Width = 300 µs
1 % Duty Cycle

TJ = 25 °C

0.1

Instantaneous Forward Current (A)

0.01

0.2

0

MBR4035PT - MBR4045PT
MBR4050PT & MBR4060PT

0.4

0.6

0.8

1.0

1.2

Instantaneous Forward Voltage (V)

Figure 3. Typical Instantaneous Forward Characteristics Per Diode

100

10

1

0.1

0.01

MBR4035PT - MBR4045PT
MBR4050PT & MBR4060PT

TJ = 75 °C

TJ = 25 °C

TJ = 125 °C

10 000

TJ = 25 °C
f = 1.0 MHz

= 50 mVp-p

V

sig

1000

Junction Capacitance (pF)

MBR4035PT - MBR4045PT

100

0.1

MBR4050PT & MBR4060PT

1

10

Reverse Voltage (V)

Figure 5. Typical Junction Capacitance Per Diode

100

10

1

100

Instantaneous Reverse Current (mA)

0.001
0

20

40

60

80

100

Percent of Rated Peak Reverse Voltage (%)

Figure 4. Typical Reverse Characteristics Per Diode

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

TO-247AD (TO-3P)

0.645 (16.4)

0.625 (15.9)

1

2

3

PIN 1

PIN 3

0.323 (8.2)

0.313 (7.9)

0.170
(4.3)

0.142 (3.6)

0.138 (3.5)

0.086(2.18)

0.076 (1.93)

0.127 (3.22)

0.117 (2.97)

0.048 (1.22)

0.044 (1.12)

PIN 2

CASE

, [e-mail], [e-mail]

Document Number: 88679
Revision: 25-Mar-08

0.245 (6.2)

0.225 (5.7)

0.840 (21.3)

0.820 (20.8)

0.160 (4.1)

0.140 (3.5)

0.795 (20.2)

0.775 (19.6)

0.225 (5.7)

0.205 (5.2)

For technical questions within your region, please contact one of the following:

[e-mail]

Transient Thermal Impedance (°C/W)

0.1

0.01

0.1

1

10

100

t - Pulse Duration (s)

Figure 6. Typical Transient Thermal Impedance Per Diode

0.203 (5.16)

0.193 (4.90)

30°

10° TYP.
Both Sides

0.118 (3.0)

0.108 (2.7)

0.030 (0.76)

0.020 (0.51)

0.078 (1.98) REF.

10

1° REF.
Both Sides

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Document Number: 91000 www.vishay.com
Revision: 11-Mar-11 1