Datasheet MBR350, MBR360 DataSheet (Vishay)

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C-16

PRODUCT SUMMARY

Package DO-201AD (C-16)

I

F(AV)

V

R

V

at I

F

F

I

max. 15 mA at 125 °C

RM

max. 150 °C

T

J

Diode variation Single die

E

AS

VS-MBR350 (-M3), VS-MBR360 (-M3)

Schottky Rectifier, 3 A

FEATURES

• Low profile, axial leaded outline

• Very low forward voltage drop

Cathode Anode

3 A

50 V, 60 V

0.64 V

5.0 mJ

• High frequency operation

• High purity, high temperature epoxy
encapsulation for enhanced mechanical strength
and moisture resistance

• Guard ring for enhanced ruggedness and long
term reliability

• Designed and qualified for commercial level

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

DESCRIPTION

The VS-MBR350..., VS-MBR360... axial leaded Schottky
rectifier has been optimized for very low forward voltage
drop, with moderate leakage. Typical applications are in
switching power supplies, converters, freewheeling diodes,
and reverse battery protection.

Vishay Semiconductors

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

F(AV)

V

I

FSM

V

T

RRM

F

J

Rectangular waveform 3.0 A

50/60 V

tp = 5 μs sine 460 A

3 Apk, TJ = 25 °C 0.73 V

- 40 to 150 °C

VOLTAGE RATINGS

PARAMETER SYMBOL VS-MBR350 VS-MBR350-M3 VS-MBR360 VS-MBR360-M3 UNITS

Maximum DC reverse voltage V

Maximum working peak
reverse voltage

V

R

50 50 60 60 V

RWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current
See fig. 4

Maximum peak one cycle
non-repetitive surge current
See fig. 6

Non-repetitive avalanche energy E

Repetitive avalanche current I

I

F(AV)

I

FSM

AR

50 % duty cycle at TL = 50 °C, rectangular waveform 3.0

5 µs sine or 3 µs rect. pulse

10 ms sine or 6 ms rect. pulse 80

TJ = 25 °C, I

AS

Current decaying linearly to zero in 1 μs
Frequency limited by, T

= 1 A, L = 10 mH 5.0 mJ

AS

maximum VA = 1.5 x VR typical

J

Following any rated load
condition and with rated
V

applied

RRM

460

1.0 A

A

Revision: 13-Oct-11

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Document Number: 93450

VS-MBR350 (-M3), VS-MBR360 (-M3)

dP

tot

dT

J

-------------

1

R

thJA

--------------<

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ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

1.0 A

T

3.0 A 0.73

Maximum forward voltage drop
See fig. 1

V

FM

9.4 A 1.06

(1)

1.0 A

3.0 A 0.64

9.4 A 0.89

TJ = 25 °C

Maximum reverse leakage current
See fig. 2

Typical junction capacitance C

Typical series inductance L

(1)

I

RM

T

S

J

T

J

VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 190 pF

Measured lead to lead 5 mm from package body 9.0 nH

Maximum voltage rate of change dV/dt Rated V

Note

(1)

Pulse width < 300 μs, duty cycle < 2 %

= 100 °C 8

= 125 °C 15

R

= 25 °C

J

T

= 125 °C

J

V

= Rated V

R

Vishay Semiconductors

0.58

0.49

0.6

R

10 000 V/µs

V

mAT

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and storage
temperature range

Maximum thermal resistance,
junction to lead

Approximate weight

Marking device Case style C-16

Notes

(1)

(2)

Mounted 1" square PCB, thermal probe connected to lead 2 mm from package

thermal runaway condition for a diode on its own heatsink

(1)

T

, T

J

Stg

DC operation

(2)

R

thJL

See fig. 4

- 40 to 150 °C

30 °C/W

1.2 g

0.042 oz.

MBR350

MBR360

Revision: 13-Oct-11

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I

F

- Instantaneous Forward Current (A)

VFM - Forward Voltage Drop (V)

93450_01

0.1

1

10

100

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6

TJ = 150 °C
T

J

= 125 °C

T

J

= 25 °C

I

R

- Reverse Current (mA)

VR - Reverse Voltage (V)

93450_02

0.001

0.01

0.1

1

10

100

0 20 40 60

TJ = 25 °C

TJ = 125 °C

TJ = 150 °C

C

T

- Junction Capacitance (pF)

VR - Reverse Voltage (V)

93450_03

10

100

1000

0 40 80 120 160

T = 25 °C

J

Average Forward Current - I

F(AV)

(A)

Average Power Loss (W)

93450_05

0

0.5

1

1.5

2

2.5

3

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

DC

RMS Limit

D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC

Fig. 1 - Maximum Forward Voltage Drop Characteristics

VS-MBR350 (-M3), VS-MBR360 (-M3)

Vishay Semiconductors

160

140

120

100

80

60

Square wave (D = 0.50)

40

80% Rated V

20

Allowable Lead Temperature (°C)

93450_04

see note (1)

0

0 1 2 3 4 5

I

- Average Forward Current (A)

F(AV)

Fig. 4 - Maximum Allowable Lead Temperature vs.

Average Forward Current

applied

R

DC

Fig. 2 - Typical Values of Reverse Current vs.

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

Note

(1)

Formula used: TC = TJ - (Pd + Pd

Pd = Forward power loss = I

Revision: 13-Oct-11

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Reverse Voltage

Fig. 5 - Forward Power Loss Characteristics

1000

100

At Any Rated Load Condition

- Non-Repetitive Surge Current (A)

10

FSM

I

93450_06

And With rated V
Following Surge

10 100 1000 10 000

tp - Square Wave Pulse Duration (µs)

RRM

Fig. 6 - Maximum Non-Repetitive Surge Current

x VFM at (I

F(AV)

REV

) x R

;

thJC

/D) (see fig. 6); Pd

F(AV)

= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated V

REV

3

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Applied

R

Document Number: 93450

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1

- Schottky MBR series

2

- Current rating: 3 = 3 A

3

- Voltage rating

4

- TR = Tape and reel package

None = Bulk package

50 = 50 V
60 = 60 V

Device code

2 43 5

MBR 3 60 TRVS-

1

-M3

6

- Vishay Semiconductors product

5

6

None = Lead (Pb)-free and RoHS compliant

-M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free

- Environmental digit

ORDERING INFORMATION TABLE

VS-MBR350 (-M3), VS-MBR360 (-M3)

Vishay Semiconductors

ORDERING INFORMATION (Example)

PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION

VS-MBR350 500 500 Bulk

VS-MBR350TR 1200 1200 Tape and reel

VS-MBR350-M3 500 500 Bulk

VS-MBR350TR-M3 1200 1200 Tape and reel

VS-MBR360 500 500 Bulk

VS-MBR360TR 1200 1200 Tape and reel

VS-MBR360-M3 500 500 Bulk

VS-MBR360TR-M3 1200 1200 Tape and reel

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95242

Part marking information www.vishay.com/doc?95304

Packaging information www.vishay.com/doc?95338

Revision: 13-Oct-11

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Document Number: 93450

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21.0 (0.83) MIN.
(2 places)

10.0 (0.39)
MAX.

Ø 5.8 (0.23)

MAX.

10.0 (0.39)
MAX.

Ø 5.8 (0.23)

MAX.

21.0 (0.83) MIN.
(2 places)

2.54 (0.100) MAX.

Flash (2 places)

Ø 1.40 (0.055)
Ø 1.20 (0.047)

(2 places)

Ø 1.40 (0.055)
Ø 1.20 (0.047)

(2 places)

Cathode band

DIMENSIONS in millimeters (inches)

Outline Dimensions

Vishay Semiconductors

Axial DO-201AD (C-16)

Revision: 29-Aug-11

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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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disclosure relating to any product.

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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.

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Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.

Revision: 02-Oct-12

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Document Number: 91000