Page 1
LITE-ON
SEMICONDUCTOR
MBR1670CT thru 16100CT
SCHOTTKY BARRIER RECTIFIERS
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification 94V-0
For use in low voltage,high frequency inv erters,free
whelling,and polarity protection applications
MECHANICAL DATA
Case : TO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any
REVERSE VOLTAGE
FORWARD CURRENT
TO-220AB
C
K
I
PIN 1
PIN 3
132
H
B
PIN
H
L
M
D
A
E
F
G
J
N
PIN 2
CASE
- 70 to 100
- 16
Amperes
TO-220AB
DIM.
A
B
C
D
E
F
G
H
Y
I
J
K
L
M
N
All Dimensions in millimeter
Volts
MIN.
14.22 15.88
2.54 3.43
8.26
-
12.70
2.29
0.51
3.53 4.09
3.56 4.83
1.14 1.40
2.03
MAX.
10.67 9.65
6.86 5.84
9.28
6.35
14.73
2.79
1.14
0.64 0.30
2.92
NA R
MAXIMUM RATINGS AND ELECTRICAL CHARACT ERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
M
I
I
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward RectifiedCurrent
C
=100 C (See Fig.1)
at T
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load (JEDEC METHOD)
Voltage Rate of Change (Rated VR)
Maximum Forward
Voltage, (Note 1)
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance,
per element (Note 2)
Typical Thermal Resistance (Note 3)
Operating Temperature Range
Storage Temperature Range
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Thermal Resistance Junction to Case.
R
P
@IF=8A
=8A
@I
F
=16A
@I
F
=16A
@I
F
@T
@T
T
J
T
J
T
J
T
J
J
J
=25 C
=125 C
=25 C
=125 C
=25 C
=125 C
SYMBOL
RRM
V
L
RMS
V
DC
V
E
(AV)
I
FSM
I
dv/dt
V
R
I
C
R
0JC
T
STG
T
F
J
J
MBR1670CT
70
49
70
MBR1680CT
80
56
80
MBR1690CT
16
125
10000
0.85
0.75
0.95
0.85
0.1
100
275
2.0
-55 to +150
-55 to +175
MBR16100CT
90
63
90
REV. 2-PRE, 13-Sep-2001, KTHC14
100
70
100
UNIT
V
V
V
A
A
V/us
V
mA
pF
C/W
C
C
Page 2
RATING AND CHARACTERISTIC CURVES
MBR 1670CT thru MBR16100CT
FIG.1 - FORWARD CURRENT DERATING CURVE
20
16
12
8
4
AVERAGE F O RWARD CURRENT
REVERSE CURRENT ,(mA)
INSTANTANEOUS
0.001
AMPERES
100
10
1.0
0.1
0.01
RESISTIVE OR INDUCTIVE LO AD
0
0
20
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
20
0
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
60 80 100 120
40
CASE TEMPERATURE , C
TJ= 125 C
TJ= 75 C
TJ= 25 C
60 80 100
40
140
120
I
FIG.2 - MAXIMUM NON-REPETITIVE SUR GE CURRENT
150
125
100
75
50
25
0
PEAK FORWARD SURGE CURRENT,
AMPERES
160
1
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
100
10
10
1.0
1.0
I
INSTA NTA N EO U S FO R WAR D CU RRENT ,(A)
0.1
M
140
0.1
0.1
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
2
510
NUMBER OF CYCLES AT 60Hz
20
50 100
Y
R
A
N
TJ= 25 C
PULSE WIDTH 300us
2% Duty cycle
0.8
0.2 0.3
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
0.4 0.5 0.6
0.7
0.9
1.0
R
P
CAPACITANCE , (pF)
1000
100
10
0.1
FIG.5 - TYPICAL JUNCTION CAPACITANCE
L
E
TJ= 25 C, f= 1MHz
1
REVERSE VOLTAGE , VOLTS
4
10
100
REV. 2-PRE, 13-Sep-2001, KTHC14
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