This device uses the Schottky Barrier principle with a large area
metal−to−silicon power diode. Ideally suited for low voltage, high
frequency rectification or as free wheeling and polarity protection
diodes in surface mount applications where compact size and weight
are critical to the system. This package also provides an easy to work
with alternative to leadless 34 package style. Because of its small size,
it is ideal for use in portable and battery powered products such as
cellular and cordless phones, chargers, notebook computers, printers,
PDAs and PCMCIA cards. Typical applications are AC−DC and
DC−DC converters, reverse battery protection, and “Oring” of
multiple supply voltages and any other application where performance
and size are critical.
Features
• Guardring for Stress Protection
• Low Leakage
• 150°C Operating Junction Temperature
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Package Designed for Optimal Automated Board Assembly
• ESD Ratings: Machine Model, C
ESD Ratings: Human Body Model, 3B
• Pb−Free Packages are Available
Mechanical Characteristics
• Reel Options: MBR120ESFT1 = 3,000 per 7″ reel/8 mm tape
MBR120ESFT3 = 10,000 per 13″ reel/8 mm tape
• Device Marking: L2E
• Polarity Designator: Cathode Band
• Weight: 11.7 mg (approximately)
• Case: Epoxy, Molded
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
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SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES
20 VOLTS
SOD−123FL
CASE 498
PLASTIC
MARKING DIAGRAM
M
L2E
G
G
L2E = Specific Device Code
M= Date Code
G= Pb−Free Package
(Note: Microdot may be in either location
DC Blocking Voltage
Average Rectified Forward Current (At Rated VR, TL = 140°C)I
Peak Repetitive Forward Current
(At Rated V
, Square Wave, 20 kHz, TL = 125°C)
R
Non−Repetitive Peak Surge Current
(Non−Repetitive peak surge current, halfwave, single phase, 60 Hz)
Storage TemperatureT
Operating Junction TemperatureT
Voltage Rate of Change (Rated VR, TJ = 25°C)dv/dt10,000
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
Figure 1. Typical Forward VoltageFigure 2. Maximum Forward Voltage
100E−3
10E−3
1E−3
TJ = 150°C
TJ = 25°C
10
TJ = 150°C
TJ = 100°C
1.0
TJ = 25°C
0.1
0.2
VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE
, INSTANTANEOUS FORWARD CURRENT (AMPS
F
i
(VOLTS)
0.60.40.
100E−3
10E−3
1E−3
TJ = 150°C
TJ = 100°C
100E−6
10E−6
1E−6
100E−9
R
10E−9
5.01015
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse CurrentFigure 4. Maximum Reverse Current
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
, AVERAGE FORWARD CURRENT (AMPS)
O
I
4525
65125
TL, LEAD TEMPERATURE (°C)
TJ = 100°C
TJ = 25°C
freq = 20 kHz
dc
SQUARE
WAVE
Ipk/Io = p
Ipk/Io = 5
Ipk/Io = 10
Ipk/Io = 20
85105165
145
100E−6
10E−6
1E−6
100E−9
10E−9
, MAXIMUM REVERSE CURRENT (AMPS)
R
I
200
0
5.01015
VR, REVERSE VOLTAGE (VOLTS)
0.7
0.6
0.5
Ipk/Io = 5
0.4
Ipk/Io = 10
0.3
Ipk/Io = 20
0.2
, AVERAGE DISSIPATION (WATTS)
0.1
FO
P
0
0.20
0.61.4
IO, AVERAGE FORWARD CURRENT (AMPS)
TJ = 25°C
SQUARE
Ipk/Io = p
WAVE
1.00.40.81.21
2
dc
Figure 5. Current DeratingFigure 6. Forward Power Dissipation
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1000
100
155
0
r(t), TRANSIENT THERMAL RESISTANCE
0
C, CAPACITANCE (pF)
10
TJ = 25°C
6.02.0 4.08.0 10
120
VR, REVERSE VOLTAGE (VOLTS)
MBR120ESFT1
153
151
149
147
145
143
141
TEMPERATURE (°C)
, DERATED OPERATING
J
139
T
137
20181614
135
R
= 25.6°C/W
q
JA
235°C/W
324.9°C/W
6.02.0 4.08.0 102
120
141618
VR, DC REVERSE VOLTAGE (VOLTS)
130°C/W
400°C/W
Figure 7. Capacitance
Figure 8. Typical Operating Temperature
Derating*
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating
TJ may be calculated from the equation:TJ = T
− r(t)(Pf + Pr) where
Jmax
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = T
where r(t) = Rthja. For other power applications further calculations must be performed.
1000
D = 0.5
100
0.2
0.1
0.05
10
P
(pk)
0.01
1
SINGLE PULSE
Test Type > Min Pad < Die Size 38x38 @ 75% mils
DUTY CYCLE, D = t1/t
qJA = 321.8 °C/W
0.1
0.00010.0010.011101000.000001
0.10.00001
t1, TIME (sec)
Figure 9. Thermal Response
t
1
Jmax
t
2
− r(t)Pr,
2
100
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MBR120ESFT1
PACKAGE DIMENSIONS
SOD−123LF
CASE 498−01
ISSUE A
E
q
D
POLARITY INDICATOR
OPTIONAL AS NEEDED
A1
A
L
b
H
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH.
4. DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT
SECTION OF THE LEAD: BETWEEN 0.10 AND 0.25 MM
FROM THE LEAD TIP.
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
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MBR120ESFT1
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867Toll Free USA/Canada
Email: orderlit@onsemi.com
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
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ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
MBR120ESFT1/D
6
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