Page 1
SEMICONDUCTOR TECHNICAL DATA
These Schottky barrier diodes are designed for high speed switching applications,
circuit protection, and voltage clamping. Extremely low forward voltage reduces
conduction loss. Miniature surface mount package is excellent for hand held and
portable applications where space is limited.
• Extremely Fast Switching Speed
• Low Forward Voltage — 0.35 V @ IF = 10 mAdc
Anode 1 6 Cathode
N/C 2 5 N/C
Order this document
by MBD54DWT1/D
Motorola Preferred Device
30 VOLTS
DUAL HOT–CARRIER
DETECTOR AND SWITCHING
DIODES
Cathode 3 4 Anode
MAXIMUM RATINGS
Reverse Voltage V
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
Forward Current (DC) I
Junction Temperature T
Storage Temperature Range T
(TJ = 125°C unless otherwise noted)
Rating
Symbol Value Unit
R
P
F
F
J
stg
DEVICE MARKING
MBD54DWT1 = BL
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage (IR = 10 µA) V
Total Capacitance (VR = 1.0 V, f = 1.0 MHz) C
Reverse Leakage (VR = 25 V) I
Forward Voltage (IF = 0.1 mAdc) V
Forward Voltage (IF = 30 mAdc) V
Forward Voltage (IF = 100 mAdc) V
Reverse Recovery Time
(IF = IR = 10 mAdc, I
Forward Voltage (IF = 1.0 mAdc) V
Forward Voltage (IF = 10 mAdc) V
Forward Current (DC) I
Repetitive Peak Forward Current I
Non–Repetitive Peak Forward Current (t < 1.0 s) I
Preferred devices are Motorola recommended choices for future use and best overall value.
Thermal Clad is a registered trademark of the Bergquist Company .
REV 3
= 1.0 mAdc) Figure 1
R(REC)
= 25°C unless otherwise noted) (EACH DIODE)
A
(BR)R
T
R
F
F
F
t
rr
F
F
F
FRM
FSM
6
5
4
1
2
3
CASE 419B–01, STYLE 6
30 Volts
150
1.2
200 Max mA
125 Max °C
–55 to +150 °C
30 — — Volts
— 7.6 10 pF
— 0.5 2.0 µAdc
— 0.22 0.24 Vdc
— 0.41 0.5 Vdc
— 0.52 1.0 Vdc
— — 5.0 ns
— 0.29 0.32 Vdc
— 0.35 0.40 Vdc
— — 200 mAdc
— — 300 mAdc
— — 600 mAdc
SOT–363
mW
mW/°C
Motorola, Inc. 1997
5–1Motorola Small–Signal Transistors, FETs and Diodes Device Data
Page 2
MBD54DWT1
820
Ω
+10 V
0.1 µF
2 k
100
0.1
µ
I
F
µ
H
F
t
t
r
p
10%
t
I
F
t
rr
t
Ω
50
PULSE
GENERATOR
100
10
125°C
1.0
, FORWARD CURRENT (mA)
F
I
0.1
0.0 0.1
OUTPUT
150°C
DUT
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so I
Notes: 3. tp » t
rr
V
R(peak)
R
90%
INPUT SIGNAL
is equal to 10 mA.
I
R
OUTPUT PULSE
(IF = IR = 10 mA; measured
at i
R(REC)
Figure 1. Recovery Time Equivalent Test Circuit
1000
TA = 150°C
A)
100
µ
10
1.0
0.1
, REVERSE CURRENT (
85°C
25°C
0.2 0.3 0.4
VF, FORWARD VOLTAGE (VOLTS)
–40°C
–55°C
0.5
0.6
R
I
0.001
0.01
0
5101520
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Forward V oltage Figure 3. Leakage Current
i
R(REC)
= 1 mA)
TA = 125°C
TA = 25°C
25
= 1 mA
TA = 85°C
30
5–2
14
12
10
8
6
4
, TOTAL CAP ACITANCE (pF)
T
C
2
0
0
51015 30
VR, REVERSE VOLTAGE (VOLTS)
2520
Figure 4. T otal Capacitance
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Page 3
MBD54DWT1
INFORMATION FOR USING THE SOT–363 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
SOT–363
0.5 mm (min)
0.4 mm (min)
SOT–363 POWER DISSIP ATION
The power dissipation of the SOT–363 is a function of the
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
by T
die, R
ambient, and the operating temperature, TA. Using the
values provided on the data sheet for the SOT–363 package,
PD can be calculated as follows:
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device which in this
case is 150 milliwatts.
The 833°C/W for the SOT–363 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 150 milliwatts. There
are other alternatives to achieving higher power dissipation
from the SOT–363 package. Another alternative would be to
use a ceramic substrate or an aluminum core board such as
Thermal Clad. Using a board material such as Thermal
Clad, an aluminum core board, the power dissipation can be
doubled using the same footprint.
, the maximum rated junction temperature of the
J(max)
, the thermal resistance from the device junction to
θJA
PD =
PD =
T
150°C – 25°C
833°C/W
J(max)
R
θJA
– T
A
= 150 milliwatts
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.65 mm 0.65 mm
1.9 mm
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
5–3Motorola Small–Signal Transistors, FETs and Diodes Device Data
Page 4
MBD54DWT1
S
A
G
V
654
–B–
123
D6 PL
P ACKAGE DIMENSIONS
MM
B0.2 (0.008)
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
DIMAMIN MAX MIN MAX
B 1.15 1.350.045 0.053
C 0.80 1.100.031 0.043
D 0.10 0.300.004 0.012
G 0.65 BSC0.026 BSC
H ––– 0.10–––0.004
J 0.10 0.250.004 0.010
K 0.10 0.300.004 0.012
N 0.20 REF0.008 REF
S 2.00 2.200.079 0.087
V 0.30 0.400.012 0.016
MILLIMETERS
1.80 2.200.071 0.087
H
C
J
K
CASE 419B-01
ISSUE C
STYLE 6:
PIN 1. ANODE 2
2. N/C
3. CATHODE 1
4. ANODE 1
5. N/C
6. CATHODE 2
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
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5–4
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Motorola Small–Signal Transistors, FETs and Diodes Device Data
Mfax is a trademark of Motorola, Inc.
MBD54DWT1/D
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