Page 1
MB1S - MB8S
MB1S-MB8S, Rev. A
MB1S - MB8S
0.5 Ampere Glass Passivated Bridge Rectifiers
Absolute Maximum Ratings* T
A
= 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**Device mounted on PCB with 0.5-0.5" (13x13 mm) lead length.
Electrical Characteristics T
A
= 25°C unless otherwise noted
ã1999 Fairchild Semiconductor Corporation
Features
• Low leakage
• Surge overload rating:
35 amperes peak.
• Ideal for printed circuit board.
Parameter Device Units
1S 2S 4S 6S 8S
Peak Repetitive Reverse Voltage 100 200 400 600 800 V
Maximum RMS Bridge Input Voltage 70 140 280 420 560 V
DC Reverse Voltage (Rated VR)
100 200 400 600 800 V
Maximum Reverse Leakage,
per leg @ rated V
R
TA = 25°C
TA = 125°C
5.0
0.5
mA
mA
Maximum Forward Voltage Drop,
per bridge @ 0.5 A 1.0 V
I2t rating for fusing t < 8.3 ms 5.0 A2t
Typical Junction Capacitance, per leg
V
R
= 4.0 V, f = 1.0 MHz
13 pF
Symbol Parameter Value Units
I
O
Average Rectified Current
@ TA = 50°C
0.5 A
i
f(surge)
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
35 A
P
D
Total Device Dissipation
Derate above 25°C
1.4
11
W
mW/°C
R
q
JA
Thermal Resistance, Junction to Ambient,** per leg 85
°C/W
R
q
JL
Thermal Resistance, Junction to Lead,
** per leg 20
°C/W
T
stg
Storage Tem perature Range -55 to +150
°C
T
J
Operating Junction Temperature -55 to +150
°C
Dimensions are in:
inches (mm)
SOIC-4
Polarity symbols molded
or marking on body
0.275(7)
MAX
0.165(4.2)
0.150(3.8)
0.067(1.7)
0.057(1.3)
0.067(1.7
)
0.057(1.3)
0.051(1.3)
0.035(0.9)
0.014(0.35)
0.006(0.15)
0.043(1.1)
0.027(0.7)
C0.0 2(0.5)
0.008(0.2)
0.118(
3.0)
MAX
0.106(2.7)
0.09(2.3)
0.031(0.8)
0.0191(0.5)
0.
106(2.7)
0.09(2.3)
0.193(4.9)
0.177(4.5)
4
3
1
2
––
+
~
1
2
3
4
:
:
:
:––
+
~
~
~
Page 2
T ypical Characteristics
MB1S - MB8S
Glass Passivated Bridge Rectifiers
(continued)
Forward Current Derating Curve
1
0.75
0.5
0.25
FORWARD CURRENT (A)
0
0 25 50 75 100 125 150 175
AMBIENT TEM PERATURE ( C)
º
Non-Repetitive Surge Current
35
30
25
20
15
10
5
0
PEAK FORWARD SURGE CURRENT (A)
12 51020 50100
NUMBER OF CYCLES AT 60Hz
Forward Charact eristics
10
1
0.1
FORWARD CURR ENT (A)
0.01
0.4 0.6 0.8 1 1.2 1.4
T = 25 C
º
A
Pulse Width = 300µs
2% Duty Cycle
FORWARD VOLTAGE (V)
Reverse Characteris tics
10
º
T = 100 C
µ
1
0.1
REVERSE CURRENT ( A)
0.01
0 20406080100120140
PERCENT OF RA TED PEAK REVER SE VO LTAGE (%)
C
T = 25 C
A
º
MB1S-MB8S, Rev. A
Page 3
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PRODUCT STATUS DEFINITIONS
Definition of Terms
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Advance Information
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No Identification Needed
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Formative or
In Design
First Production
Full Production
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This datasheet contains the design specifications for
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This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
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