Datasheet MB2827BB Datasheet (Philips)

Page 1
Philips Semiconductors Advanced BiCMOS Products Product specification
MB2827
Dual 10-bit buffer/line driver; non-inverting (3-State)
1
August 27, 1993 853-1667 10660
FEATURES
CC
and GND pins minimize
switching noise
Live insertion/extraction permitted
3-State output buffers
Power–up 3-State
Output capability: +64mA/–32mA
Latch-up protection exceeds 500mA per
Jedec JC40.2 Std 17
ESD protection exceeds 2000 V per MIL
STD 883 Method 3015 and 200 V per Machine Model
DESCRIPTION
The MB2827 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive.
The MB2827 20-bit buffers provide high performance bus interface buffering for wide data/address paths or buses carrying parity. They have NOR Output Enables (nOE
1,
nOE
2) for maximum control flexibility.
QUICK REFERENCE DATA
SYMBOL PARAMETER
CONDITIONS
T
amb
= 25°C; GND = 0V
TYPICAL UNIT
t
PLH
t
PHL
Propagation delay nAx to nYx
CL = 50pF; VCC = 5V 3.0 ns
C
IN
Input capacitance VI = 0V or V
CC
4 pF
C
OUT
Output capacitance VO = 0V or VCC; 3-State 7 pF
I
CCZ
Total supply current Outputs disabled; VCC = 5.5V 80 µA
ORDERING INFORMATION
PACKAGES TEMPERATURE RANGE ORDER CODE DRAWING NUMBER
52-pin plastic Quad Flat Pack -40°C to +85°C MB2827BB 1418B
PIN CONFIGURATION LOGIC SYMBOL
1Y7
Vcc
1Y3
1Y2
1Y1
1Y0
1OE1
1OE0
1A0
1A1
GND
1A2
1A3
Vcc
Vcc
2Y6
2Y7
GND
2Y8
2Y9
2OE1
2OE0
2A9
2A8
2A7
2A6
Vcc
19 2220 231716 25 26241514 2118
1Y8
2Y1
1Y9
2Y2
GND
1Y6
2Y4 2Y5
2Y3
1Y5
2Y0
1Y4
1 2
3 4
5 6 7 8
9 10 11 12
13
47 4446 434950 41 40425152 4548
1A9
2A2
2A0
GND
1A7
1A6
2A4 2A5
2A3
1A5
2A1
1A8
1A439 38 37 36
35 34 33 32
31 30 29 28
27
MB2827
52-pin PQFP
45 44 42 41 39 38 37 36
1A0 1A1 1A2 1A3 1A4 1A5 1A6 1A7
1Y0 1Y1 1Y2 1Y3 1Y4 1Y5 1Y6 1Y7
48 49 50 51 1 2 3 5
46 47
1OE0 1OE1
35 34
1A8 1A9
1Y8 1Y9
6 7
33 32 31 29 28 27 25 24
2A0 2A1 2A2 2A3 2A4 2A5 2A6 2A7
2Y0 2Y1 2Y2 2Y3 2Y4 2Y5 2Y6 2Y7
8 9 10 11 12 13 15 16
21 20
2OE0 2OE1
23 22
2A8 2A9
2Y8 2Y9
18 19
Page 2
Philips Semiconductors Advanced BiCMOS Products Product specification
MB2827
Dual 10-bit buffer/line driver; non-inverting (3-State)
August 27, 1993
2
PIN DESCRIPTION
PIN NUMBER SYMBOL FUNCTION
45, 44, 42, 41, 39, 38, 37, 36, 35, 34,
33, 32, 31, 29, 28, 27, 25, 24, 23, 22
1A0 – 1A9 2A0 – 2A9
Data inputs
48, 49, 50, 51, 1, 2, 3, 5, 6, 7, 8, 9,
10, 11, 12, 13, 15, 16, 18, 19
1Y0 – 1Y9 2Y0 – 2Y9
Data outputs
46, 47 21, 20
1OE0, 1OE1 2OE
0, 2OE1
Output enable inputs (active–Low)
4, 17, 30, 43 GND Ground (0V)
14, 26, 40, 52 V
CC
Positive supply voltage
LOGIC SYMBOL (IEEE/IEC)
1
45 48 44 49 42 50 41 51 39 1 38 2 37 3 36 5
46
47
35 6 34 7
1
33 8 32 9 31 10 29 11 28 12 27 13 25 15 24 16
21
20
23 18 22 19
&
EN1
&
EN1
LOGIC DIAGRAM
nA0
nY0
nOE
0
nA1
nY1
nA2
nY2
nA3
nY3
nA4
nY4
nA5
nY5
nA6
nY6
nA7
nY7
nA8
nY8
nA9
nY9
nOE1
FUNCTION TABLE
INPUTS OUTPUTS
OPERATING
nOEx nAx nYx MODE
L L L Transparent L H H Transparent
H X Z High impedance
H = High voltage level L = Low voltage level X = Don’t care Z = High impedance “off” state
Page 3
Philips Semiconductors Advanced BiCMOS Products Product specification
MB2827
Dual 10-bit buffer/line driver; non-inverting (3-State)
August 27, 1993
3
ABSOLUTE MAXIMUM RATINGS
1, 2
SYMBOL
PARAMETER CONDITIONS RATING UNIT
V
CC
DC supply voltage –0.5 to +7.0 V
I
IK
DC input diode current VI < 0 –18 mA
V
I
DC input voltage
3
–1.2 to +7.0 V
I
OK
DC output diode current VO < 0 –50 mA
V
OUT
DC output voltage
3
output in Off or High state –0.5 to +5.5 V
I
OUT
DC output current output in Low state 128 mA
T
stg
Storage temperature range –65 to 150 °C
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.
3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
RECOMMENDED OPERATING CONDITIONS
SYMBOL PARAMETER LIMITS UNIT
MIN MAX
V
CC
DC supply voltage 4.5 5.5 V
V
I
Input voltage 0 V
CC
V
V
IH
High-level input voltage 2.0 V
V
IL
Low-level Input voltage 0.8 V
I
OH
High-level output current –32 mA
I
OL
Low-level output current 64 mA
t/v Input transition rise or fall rate 0 5 ns/V
T
amb
Operating free-air temperature range –40 +85 °C
Page 4
Philips Semiconductors Advanced BiCMOS Products Product specification
MB2827
Dual 10-bit buffer/line driver; non-inverting (3-State)
August 27, 1993
4
DC ELECTRICAL CHARACTERISTICS
LIMITS
SYMBOL PARAMETER TEST CONDITIONS T
amb
= +25°C
T
amb
= –40°C
to +85°C
UNIT
MIN TYP MAX MIN MAX
V
IK
Input clamp voltage VCC = 4.5V; IIK = –18mA –0.9 –1.2 –1.2 V
VCC = 4.5V; IOH = –3mA; VI = VIL or V
IH
2.5 2.9 2.5 V
V
OH
High-level output voltage VCC = 5.0V; IOH = –3mA; VI = VIL or V
IH
3.0 3.4 3.0 V
VCC = 4.5V; IOH = –32mA; VI = VIL or V
IH
2.0 2.4 2.0 V
V
OL
Low-level output voltage VCC = 4.5V; IOL = 64mA; VI = VIL or V
IH
0.42 0.55 0.55 V
I
I
Input leakage current VCC = 5.5V; VI = GND or 5.5V ±0.01 ±1.0 ±1.0 µA
I
OFF
Power-off leakage current VCC = 0.0V; VO = 4.5V; VI = 0V or 5.5V ±5.0 ±100 ±100 µA
IPU/I
PD
Power-up/down 3-State output current
3
VCC = 2.1V; VO = 0.5V; VI = GND or VCC; V
OE
= Don’t care
±5.0 ±50 ±50 µA
I
OZH
3-State output High current VCC = 5.5V; VO = 2.7V; VI = VIL or V
IH
5.0 50 50 µA
I
OZL
3-State output Low current VCC = 5.5V; VO = 0.5V; VI = VIL or V
IH
–5.0 –50 –50 µA
I
CEX
Output High leakage current VCC = 5.5V; VO = 5.5V; VI = GND or V
CC
5.0 50 50 µA
I
O
Output current
1
VCC = 5.5V; VO = 2.5V –50 –70 –180 –50 –180 mA
I
CCH
VCC = 5.5V; Outputs High, VI = GND or V
CC
80 250 250 µA
I
CCL
Quiescent supply current VCC = 5.5V; Outputs Low, VI = GND or V
CC
52 76 76 mA
I
CCZ
VCC = 5.5V; Outputs 3-State; V
I
= GND or V
CC
80 250 250 µA
I
CC
Additional supply current per input pin
2
VCC = 5.5V; one input at 3.4V, other inputs at V
CC
or GND
0.5 1.5 1.5 mA
NOTES:
1. Not more than one output should be tested at a time, and the duration of the test should not exceed one second.
2. This is the increase in supply current for each input at 3.4V.
3. This parameter is valid for any V
CC
between 0V and 2.1V with a transition timeof up to 10msec. From VCC = 2.1V to VCC = 5V ± 10% a
transition time of up to 100µsec is permitted.
AC CHARACTERISTICS
GND = 0V, tR = tF = 2.5ns, CL = 50pF, RL = 500
LIMITS
SYMBOL PARAMETER WAVEFORM
T
amb
= +25oC
V
CC
= +5.0V
T
amb
= -40 to
+85
o
C
V
CC
= +5.0V ±0.5V
UNIT
MIN TYP MAX MIN MAX
t
PLH
t
PHL
Propagation delay nAx to nYx
1
1.1
1.4
2.6
2.8
3.9
4.1
1.1
1.4
4.1
4.4
ns
t
PZH
t
PZL
Output enable time to High and Low level
2
1.7
2.4
3.5
4.4
4.8
5.6
1.7
2.4
5.6
6.4
ns
t
PHZ
t
PLZ
Output disable time from High and Low level
2
1.9
1.6
3.5
3.2
4.8
4.5
1.9
1.6
5.0
4.9
ns
Page 5
Philips Semiconductors Advanced BiCMOS Products Product specification
MB2827
Dual 10-bit buffer/line driver; non-inverting (3-State)
August 27, 1993
5
AC WAVEFORMS
nOEx INPUT
V
M
V
M
t
PZH
t
PHZ
nYx OUTPUT
V
OH
V
M
V
M
nYx OUTPUT
V
OL
t
PZL
t
PLZ
3.5V
0V
VOL + 0.3V
V
OH
– 0.3V
nAx INPUT
V
M
V
M
nYx OUTPUT
V
M
V
M
t
PLH
t
PHL
Waveform 1. Waveforms Showing the Input (nAx) to
Output (nYx) Propagation Delays
Waveform 2. Waveforms Showing the 3-State Output
Enable and Disable Times
PULSE
GENERATOR
R
T
V
IN
D.U.T
V
OUT
C
L
R
L
V
CC
R
L
7.0V
Test Circuit for 3-State Outputs
V
M
V
M
t
W
AMP (V)
NEGATIVE PULSE
10% 10%
90%
90%
0V
V
M
V
M
t
W
AMP (V)
POSITIVE PULSE
90% 90%
10%
10%
0V
t
THL
(tF)
t
TLH
(tR) t
THL
(tF)
t
TLH
(tR)
VM = 1.5V
Input Pulse Definition
DEFINITIONS
RL = Load resistor; see AC CHARACTERISTICS for value. CL = Load capacitance includes jig and probe capacitance;
see AC CHARACTERISTICS for value.
RT = Termination resistance should be equal to Z
OUT
of
pulse generators.
INPUT PULSE REQUIREMENTS
FAMILY
Amplitude Rep. Rate t
W
t
R
t
F
MB 3.0V 1MHz 500ns 2.5ns 2.5ns
SWITCH POSITION
TEST SWITCH
t
PLZ
closed
t
PZL
closed
All other open
TEST CIRCUIT AND WAVEFORM
Page 6
Philips Semiconductors Advanced BiCMOS Products Product specification
MB2827
Dual 10-bit buffer/line driver; non-inverting (3-State)
August 27, 1993
6
Adjustment of t
PHL
for
Load Capacitance and # of Outputs Switching
nAx to nYx
t
PLH
vs Temperature (T
amb
)
C
L
= 50pF, 1 Output Switching
nAx to nYx
°C
MAX
4.5V
CC
5.5V
CC
MIN
ns
Offset in ns
Adjustment of t
PLH
for
Load Capacitance and # of Outputs Switching
nAx to nYx
pF
20 switching 10 switching 1 switching
ns
Offset in ns
t
PHL
vs Temperature (T
amb
)
C
L
= 50pF, 1 Output Switching
nAx to nYx
°C
MAX
4.5V
CC
5.5V
CC
MIN
20 switching 10 switching
1 switching
ns
Offset in ns
t
PZH
vs Temperature (T
amb
)
C
L
= 50pF, 1 Output Switching
nOE
x to nYx
°C
MAX
4.5V
CC
5.5V
CC
MIN
Adjustment of t
PZH
for
Load Capacitance and # of Outputs Switching
nOE
x to nYx
pF
20 switching 10 switching 1 switching
pF
5
4
3
2
1
0
–55 –35 –15 5 25 45 65 85 105 125
6
5
4
3
2
1
0
–55 –35 –15 5 25 45 65 85 105 125
5
4
3
2
1
0
–1
–2
0 50 100 150 200
5
4
3
2
1
0
–1
–2
0 50 100 150 200
7
6
5
4
3
2
1
0
–55 –35 –15 5 25 45 65 85 105 125
5
4
3
2
1
0
–1
–2
0 50 100 150 200
Page 7
Philips Semiconductors Advanced BiCMOS Products Product specification
MB2827
Dual 10-bit buffer/line driver; non-inverting (3-State)
August 27, 1993
7
t
PZL
vs Temperature (T
amb
)
C
L
= 50pF, 1 Output Switching
nOE
x to nYx
°C
MAX
4.5V
CC
5.5V
CC
MIN
ns
Offset in ns
Adjustment of t
PZL
for
Load Capacitance and # of Outputs Switching
nOE
x to nYx
pF
20 switching 10 switching
1 switching
ns
Offset in ns
t
PHZ
vs Temperature (T
amb
)
C
L
= 50pF, 1 Output Switching
nOE
x to nYx
°C
MAX
4.5V
CC
5.5V
CC
MIN
Adjustment of t
PHZ
for
Load Capacitance and # of Outputs Switching
nOE
x to nYx
pF
20 switching 10 switching 1 switching
ns
Offset in ns
t
PLZ
vs Temperature (T
amb
)
C
L
= 50pF, 1 Output Switching
nOE
x to nYx
°C
MAX
4.5V
CC
5.5V
CC
MIN
Adjustment of t
PLZ
for
Load Capacitance and # of Outputs Switching
nOE
x to nYx
pF
20 switching 10 switching 1 switching
8
7
6
5
4
3
2
1
–55 –35 –15 5 25 45 65 85 105 125
6
5
4
3
2
1
–55 –35 –15 5 25 45 65 85 105 125
5
4
3
2
1
0
–1
–2
0 50 100 150 200
8 7 6 5 4 3 2 1
0 –1 –2 –3
0 50 100 150 200
7
6
5
4
3
2
1
0
–55 –35 –15 5 25 45 65 85 105 125
6
5
4
3
2
1
0
–1
–2
0 50 100 150 200
Page 8
Philips Semiconductors Advanced BiCMOS Products Product specification
MB2827
Dual 10-bit buffer/line driver; non-inverting (3-State)
August 27, 1993
8
ns
Offset in ns
t
TLH
vs Temperature (T
amb
)
C
L
= 50pF, 1 Output Switching
°C
4.5V
CC
5.5V
CC
Adjustment of t
TLH
for
Load Capacitance and # of Outputs Switching
pF
20 switching 10 switching 1 switching
V
OHV
and V
OLP
vs Load Capacitance
V
CC
= 5V, VIN = 0 to 3V
125°C 25°C –55°C
V
OHP
and V
OLV
vs Load Capacitance
V
CC
= 5V, VIN = 0 to 3V
125°C 25°C –55°C
125°C 25°C –55°C
125°C 25°C –55°C
t
THL
vs Temperature (T
amb
)
C
L
= 50pF, 1 Output Switching
°C
4.5V
CC
5.5V
CC
ns
Offset in ns
Adjustment of t
THL
for
Load Capacitance and # of Outputs Switching
pF
20 switching 10 switching 1 switching
volts
volts
pF pF
4
3
2
1
–55 –35 –15 5 25 45 65 85 105 125
3.0
2.5
2.0
1.5
1
–55 –35 –15 5 25 45 65 85 105 125
9 8 7 6 5 4 3 2 1
0 –1 –2 –3
0 50 100 150 200
5
4
3
2
1
0
–1
–2
0 50 100 150 200
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
–0.5
–1
0 50 100 150 200
6 5 4 3 2 1
0 –1 –2 –3
0 50 100 150 200
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