capacitor. Nevertheless, a ceramic capacitor of at least 
10µF must be used and must be added and placed as 
close as possible to the VTTI pin. This value must be 
increased with larger load current, or if the trace from 
the VTTI pin to the power source is long and has significant impedance. Furthermore, to prevent undesirable 
VTTI bounce from coupling back to the REFIN input 
and possibly causing instability in the loop, the REFIN 
pin should ideally tap its signal from a separate lowimpedance DC source rather than directly from the 
VTTI input. If the latter is unavoidable, increase the 
amount of bypass capacitance at the VTTI input and 
add additional bypass at the REFIN pin.
MOSFET Selection (Buck)
The MAX8632 drives external, logic-level, n-channel 
MOSFETs as the circuit-switch elements. The key 
selection parameters:
On-resistance (R
DS(ON)
): the lower, the better.
Maximum drain-to-source voltage (V
DSS
): should be
at least 20% higher than input supply rail at the highside MOSFET’s drain.
Gate charges (QG, QGD, QGS): the lower the better.
Choose MOSFETs with rated R
DS(ON)
at VGS= 4.5V. 
For a good compromise between efficiency and cost, 
choose the high-side MOSFET that has a conduction 
loss equal to its switching loss at nominal input voltage 
and maximum output current (see below). For the lowside MOSFET, make sure that it does not spuriously 
turn on because of dV/dt caused by the high-side 
MOSFET turning on, as this results in shoot-through 
current degrading efficiency. MOSFETs with a lower 
Q
GD
to QGSratio have higher immunity to dV/dt.
For proper thermal-management design, calculate the 
power dissipation at the desired maximum operating 
junction temperature, maximum output current, and 
worst-case input voltage. For the low-side MOSFET, the 
worst case is at V
IN(MAX)
. For the high-side MOSFET,
the worst case could be at either V
IN(MIN)
or V
IN(MAX)
. 
The high-side MOSFET and low-side MOSFET have different loss components due to the circuit operation. 
The low-side MOSFET operates as a zero-voltage 
switch; therefore, major losses are:
• The channel-conduction loss (P
LSCC
)
• The body-diode conduction loss (P
LSDC
)
• The gate-drive loss (P
LSDR
):
Use R
DS(ON)
at T
J(MAX)
:
where VFis the body-diode forward-voltage drop, tDTis 
the dead time (≈30ns), and fSWis the switching frequency. Because of the zero-voltage switch operation, 
the low-side MOSFET gate-drive loss occurs as a result 
of charging and discharging the input capacitance, 
(C
ISS
). This loss is distributed among the average DL
gate-driver’s pullup and pulldown resistance, R
DL
(≈1Ω), and the internal gate resistance (R
GATE
) of the
MOSFET (≈2Ω). The drive power dissipated is given by:
The high-side MOSFET operates as a duty-cycle control
switch and has the following major losses:
• The channel-conduction loss (P
HSCC
)
• The VI overlapping switching loss (P
HSSW
)
• The drive loss (P
HSDR
)
(The high-side MOSFET does not have body-diode 
conduction loss because the diode never conducts 
current):
Use R
DS(ON)
at T
J(MAX)
:
where I
GATE
is the average DH-driver output current
determined by:
where R
DH
is the high-side MOSFET driver’s on-resis-
tance (1Ω typ) and R
GATE
is the internal gate resis-
tance of the MOSFET (≈2Ω):