Datasheet MAT01 Datasheet (Analog Devices)

Matched Monolithic

a

FEATURES
Low V
Low TCV
High h
Excellent h
Low Noise Voltage: 0.23 ␮V p-p—0.1 Hz to 10 Hz
High Breakdown: 45 V min
Available in Die Form

PRODUCT DESCRIPTION

The MAT01 is a monolithic dual NPN transistor. An exclusive
Silicon Nitride “Triple-Passivation” process provides excellent
stability of critical parameters over both temperature and time.

Matching characteristics include offset voltage of 40 µV, tem-
perature drift of 0.15 µV/°C, and h

high h
including an exceptional h
10 nA. The high gain at low collector current makes the
MAT01 ideal for use in low power, low level input stages.

(VBE Match): 40 ␮V typ, 100 ␮V max

OS

: 0.5 ␮V/ⴗC max

OS

: 500 min

FE

Linearity from 10 nA to 10 mA

FE

matching of 0.7%. Very

is provided over a six decade range of collector current,

FE

FE

FE

of 590 at a collector current of only

Dual Transistor

MAT01

PIN CONNECTION

TO-78

(H Suffix)

NOTE: Substrate is connected to case.

BURN-IN CIRCUIT

REV. A

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] World Wide Web Site: http://www.analog.com
Fax: [phone] © Analog Devices, Inc., 1997

MAT01–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS

Parameter Symbol Conditions Min Typ Max Min Typ Min Units

Breakdown Voltage BV
Offset Voltage V

CEO

OS

(@ VCB = 15 V, IC = 10 ␮A, TA = 25ⴗC, unless otherwise noted.)

MAT01AH MAT01GH

I

= 100 µA45 45 V

C

0.04 0.1 0.10 0.5 mV

Offset Voltage Stability

First Month V

/Time (Note 1) 2.0 2.0 µV/Mo

OS

Long Term (Note 2) 0.2 0.2 µV/Mo

Offset Current I
Bias Current I
Current Gain h

Current Gain Match ∆h

Low Frequency Noise

Voltage e

OS

B

FE

FE

p-p 0.1 Hz to 10 Hz

n

IC = 10 nA 590 430

= 10 µA 500 770 250 560

I

C

I

= 10 mA 840 610

C

I

= 10 µA 0.7 3.0 1.0 8.0 %

C

100 nA ≤ I

C

≤ 10 mA 0.8 1.2 %

3

0.1 0.6 0.2 3.2 nA
13 20 18 40 nA

0.23 0.4 0.23 0.4 µV p-p

Broadband Noise

Voltage e

Noise Voltage

Density e

Offset Voltage Change ∆V
Offset Current Change ∆I

Collector-Base

Leakage Current I

Collector-Emitter

Leakage Current I

Collector-Collector

Leakage Current I

Collector Saturation V

Voltage I
Gain-Bandwidth Product f
Output Capacitance C

rms 1 Hz to 10 kHz 0.60 0.60 µV rms

n

n

OS/∆VCB

OS/∆VCB

CBO

CES

CC

CE(SAT)

T

OB

fO = 10 Hz
f

= 100 Hz

O

f

= 1000 Hz

O

0 ≤ VCB ≤ 30 V 0.5 3.0 0.8 8.0 µV/V
0 ≤ VCB ≤ 30 V 2 15 3 70 pA/V

VCB = 30 V, IE = 0

VCE = 30 V, VBE = 0

VCC = 30 V
IB = 0.1 mA, IC = 1 mA 0.12 0.20 0.12 0.25 V

= 1 mA, IC = 10 mA 0.8 0.8 V

B

VCE = 10 V, IC = 10 mA 450 450 MHz
VCB = 15 V, IE = 0 2.8 2.8 pF

3

3

3

4

4, 5

5

7.0 9.0 7.0 9.0 nV/√Hz

6.1 7.6 6.1 7.6 nV/√Hz

6.0 7.5 6.0 7.5 nV/√Hz

15 50 25 200 pA

50 200 90 400 pA

20 200 30 400 pA

Collector-Collector

Capacitance C

CC

V

= 0 8.5 8.5 pF

CC

ELECTRICAL CHARACTERISTICS

Parameter Symbol Conditions Min Typ Max Min Typ Min Units

Offset Voltage V

OS

(@ VCB = 15 V, I

= 10 ␮A, –55ⴗC ≤ TA ≤ +125ⴗC, unless otherwise noted.)

C

MAT01AH MAT01GH

0.06 0.15 0.14 0.70 mV

Average Offset

Voltage Drift TCV
Offset Current I

OS

OS

(Note 6) 0.15 0.50 0.35 1.8 µV/°C

0.9 8.0 1.5 15.0 nA

Average Offset

Current Drift TCI

Bias Current Ι

Current Gain h
Collector-Base I

OS

Β

FE

CBO

Leakage Current I
Collector-Emitter I

CES

Leakage Current V
Collector-Collector I

CC

(Note 7) 10 90 15 150 pA/°C

28 60 36 130 nA

167 400 77 300

T

= 125°C, V

A

4

= 0

E

T

= 125°C, V

A

= 0

BE

T

= 125°C, V

A

4, 6

= 30 V,

CB

= 30 V,

CE

= 30 V,

CC

15 80 25 200 nA

50 300 90 400 nA

Leakage Current (Note 6) 30 200 50 400 nA

–2–

REV. A

MAT01

TYPICAL ELECTRICAL CHARACTERISTICS

(@ VCB = 15 V and IC = 10 ␮A, TA = +25ⴗC, unless otherwise noted.)

MAT01N

Parameter Symbol Conditions Typical Units

Average Offset Voltage Drift TCV
Average Offset Current Drift TCI

OS

OS

0.35 µV/°C
15 pA/°C

Collector-Emitter-Leakage

Current I

CES

VCE = 30 V, VBE = 0 90 pA

Collector-Base-Leakage

Current I

Gain Bandwidth Product f

CBO

T

Offset Voltage Stability ∆V

/T First Month (Note 1) 2.0 µV/Mo

OS

VCB = 30 V, IE = 0 25 pA
VCE = 10 V, IC = 10 mA 450 MHz

Long-Term (Note 2) 0.2 µV/Mo

NOTES

1

Exclude first hour of operation to allow for stabilization.

2

Parameter describes long-term average drift after first month of operation.

3

Sample tested.

4

The collector-base (I

reduced by a factor of two to ten times by connecting the substrate (package) to
a potential which is lower than either collector voltage.

5

ICC and I

6

Guaranteed by VOS test (TCV

7

Guaranteed by IOS test limits over temperature.

Specifications subject to change without notice.

are guaranteed by measurement of I

CES

) and collector-emitter (I

CBO

V

OS

≅

OS

for V

T

) leakage currents may be

CES

.

CBO

Ⰶ VBE) T = 298°K for T

OS

= 25°C.

A

WAFER TEST LIMITS

(@ VCB = 15 V, IC = 10 ␮A, TA = +25ⴗC, unless otherwise noted.)

MAT01N

Parameter Symbol Conditions Limits Units

Breakdown Voltage BV
Offset Voltage V
Offset Current I
Bias Current I
Current Gain h

Current Gain Match ∆h
Offset Voltage Change ∆V
Offset Current Change ∆V

Collector Saturation Voltage V

NOTE
Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not
guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.

CEO

OS

OS

B

FE

FE

/∆V

OS

/∆V

OS

CE (SAT)

CB

CB

I

= 100 µA45 V min

C

0.5 mV max

3.2 nA max
40 nA max
250 min

8.0 % max

0 ≤ VCB ≤ 30 V 8.0 µV/V max
0 ≤ VCB ≤ 30 V 70 pA/V max

IB = 0.1 mA, IC = 1 mA 0.25 V max

REV. A

–3–

MAT01

WARNING!

ESD SENSITIVE DEVICE

ABSOLUTE MAXIMUM RATINGS

Collector-Base Voltage (BV

CBO

1

)

MAT01AH, GH, N . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 V

Collector-Emitter Voltage (BV

CEO

)

MAT01AH, GH, N . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 V

Collector-Collector Voltage (BV

CC

)

MAT01AH, GH, N . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 V

Emitter-Emitter Voltage (BV

EE

)

MAT01AH, GH, N . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 V

Emitter-Base Voltage (BV
Collector Current (I
Emitter Current (I

) . . . . . . . . . . . . . . . . . . . . . . . . . . 25 mA

C

) . . . . . . . . . . . . . . . . . . . . . . . . . . 25 mA

E

Total Power Dissipation

Case Temperature ≤ 40°C

Ambient Temperature ≤ 70°C

)2 . . . . . . . . . . . . . . . . . . . . . 5 V

EBO

3

. . . . . . . . . . . . . . . . . . . . 1.8 W

4

. . . . . . . . . . . . . . . 500 mW

Operating Ambient Temperature . . . . . . . . . –55°C to +125°C

Operating Junction Temperature . . . . . . . . . –55°C to +150°C

ORDERING GUIDE

VOS max Temperature Package

Model (TA = +25ⴗC) Range Option

2

MAT01AH

0.1 mV –55°C to +125°C TO-78

MAT01GH 0.5 mV –55°C to +125°C TO-78

NOTES

1

Burn-in is available on commercial and industrial temperature range parts in
TO-can packages.

2

For devices processed in total compliance to MIL-STD-883, add/883 after part
number. Consult factory for 883 data sheet.

Storage Temperature . . . . . . . . . . . . . . . . . . –65°C to +150°C

Lead Temperature (Soldering, 60 sec) . . . . . . . . . . . .+300°C

DICE Junction Temperature . . . . . . . . . . . . –65°C to +150°C

NOTES

1

Absolute maximum ratings apply to both DICE and packaged devices.

2

Application of reverse bias voltages in excess of rating shown can result in
degradation of hFE and hFE matching characteristics. Do not attempt to measure
BV

greater than the 5 V rating shown.

EBO

3

Rating applies to applications using heat sinking to control case temperature.

Derate linearity at 16.4 mW/°C for case temperatures above 40°C.

4

Rating applies to applications not using heat sinking; device in free air only. Derate

linearity at 6.3 mW/°C for ambient temperatures above 70°C.

1

DICE CHARACTERISTICS

1. COLLECTOR (1)

2. BASE (1)

3. EMITTER (1)

5. EMITTER (2)

6. BASE (2)

7. COLLECTOR (2)

DIE SIZE 0.035 × 0.025 inch, 875 sq. mils

(0.89

×

0.64 mm, 0.58 sq. mm)

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the MAT01 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.

–4–

REV. A

MAT01

Figure 1. Offset Voltage
vs. Temperature

Figure 2. Current Gain
vs. Collector Current

Figure 4. Offset Voltage vs. Time

Figure 5. Current Gain
vs. Temperature

Figure 7. Base-Emitter Voltage
vs. Collector Current

Figure 8. Saturation Voltage
vs. Collector Current

Figure 3. Noise Voltage

REV. A

Figure 6. Noise Current Density

–5–

Figure 9. Gain-Bandwidth
vs. Collector Current

MAT01

MAT01 TEST CIRCUITS

Figure 10. MAT01 Matching Measurement Circuit

Figure 11. MAT01 Noise Measurement Circuit

–6–

REV. A

APPLICATION NOTES

Application of reverse bias voltages to the emitter-base junctions
in excess of ratings (5 V) may result in degradation of h
h

matching characteristics. Circuit designs should be checked

FE

FE

and

to ensure that reverse bias voltages above 5 V cannot be applied
during such transient conditions as at circuit turn-on and
turn-off.

Stray thermoelectric voltages generated by dissimilar metals at
the contacts to the input terminals can prevent realization of the
predicted drift performance. Both input terminals should be
maintained at the same temperature, preferably close to the tem­perature of the device’s package.

TYPICAL APPLICATIONS

MAT01

Figure 12. Precision Reference

Figure 13. Basic Digital Thermometer Readout in

°

Degrees Kelvin (

K)

REV. A

Figure 14. Precision Operational Amplifiers

Figure 15. Digital Thermometer with Readout in °C

–7–

MAT01

0.185 (4.70)

0.165 (4.19)

0.370 (9.40)

0.335 (8.51)

0.335 (8.51)

0.305 (7.75)

0.040 (1.02) MAX

0.045 (1.14)

0.010 (0.25)

OUTLINE DIMENSIONS

Dimensions shown in inches and (mm).

H-06A

6-Lead Metal Can (TO-78)

REFERENCE PLANE

0.750 (19.05)

0.500 (12.70)

0.250 (6. 35) MIN

0.050 (1.27) MAX

0.019 (0.48)

0.016 (0.41)

0.021 (0.53)

0.016 (0.41)

BASE & SEATING PLANE

0.200

(5.08)

BSC

0.100
(2.54)

BSC

0.100 (2.54) BSC

4

3

2

1

0.034 (0.86)

0.027 (0.69)

0.160 (4.06)

0.110 (2.79)

5

6

45° BSC

0.045 (1.14)

0.027 (0.69)

3127–0–6/97

–8–

PRINTED IN U.S.A.

REV. A